Deposition Rate Of Thin Films Research Articles

Development of Statistical Process Control Methods for Anisotropic Magnetoresistive Sensor Technology

An application of some statistical process control methods for production process of thin anisotropic ferromagnetic films are described. There was calculated the correlation between the thin film deposition rate, substrate's temperature, time of deposition and surface resistivity, magnetoresistive effect, anisotropy field, coercive force of thin film. It was shown that more strong correlation (rk = 0,78) with AMR-effect's value in film observe for surface resistivity that can use for AMR-effect rising.

Epitaxial Bi5Ti3FeO15 thin films on Nb‐doped SrTiO3 substrates

AbstractWe investigated the ferroelectric switching dynamics as well as the multiferroic and piezoelectric properties of highly a‐oriented epitaxial Bi5Ti3FeO15 (BTFO) thin films on Nb‐doped SrTiO3 single crystal substrates. The BTFO thin films favored highly a‐oriented crystallinity because c‐oriented crystallinity decreased under deposition conditions in which substrate temperature and thin film deposition rate were simultaneously lowered. The highly a‐oriented epitaxial BTFO thin films showed the best ferroelectric properties, whereas the highly c‐oriented epitaxial BTFO thin films showed the best ferromagnetic properties. In particular, the BTFO thin films in which a‐ and c‐oriented crystallinity were properly mixed showed the best piezoelectric properties.

Simulation and optimization of polysilicon thin film deposition in a 3000 mm tubular LPCVD reactor

The high photoelectric conversion efficiency of tunnel oxide passivating contacts (TOPCon) photovoltaic (PV) cells and their process compatibility are increasingly recognized by the industry, making it of growing importance to develop deposition process technologies for high-capacity polysilicon thin films. Currently, the size of LPCVD reactors for preparing polysilicon thin films in the industry is getting enlarged, which directly leads to the degradation of axial uniformity of polysilicon thin films. In this paper, a coupled multi-physics field model is established to simulate the polysilicon thin-film Low Pressure Chemical Vapor Deposition (LPCVD) process based on COMSOL Multiphysics platform, and the validity of the model is verified by comparing experimental data with simulation results. By investigating the flow field, thermal field, chemical reaction field and surface reaction field, the effects of the process parameters such as chamber temperature and pressure are investigated, as well as characteristics of the polysilicon thin films deposition. The results show that the uniformity of thin films decreases with increasing temperature and pressure, and the deposition rate of thin films increases as temperature and pressure increase. With the help of optimized the process parameters, the deposition rate of polysilicon thin films was increased by 13.0% and the uniformity of thin films was controlled above 96%. The uniformity of the films can be further improved to 96.7% by optimizing the temperature zone parameters and adopting the wafers placement strategy.

Process Engineered Spontaneous Orientation Polarization in Organic Light-Emitting Devices

Polar molecules with appreciable permanent dipole moments (PDMs) are widely used as the electron transport layer (ETL) in organic light-emitting devices (OLEDs). When the PDMs spontaneously align, a macroscopic polarization field can be observed, a phenomenon known as spontaneous orientation polarization (SOP). The presence of SOP in the ETL induces considerable surface potential and charge accumulation that is capable of quenching excitons and reducing device efficiency. While prior work has shown that the degree of SOP is sensitive to film processing conditions, this work considers SOP formation by quantitatively treating the vapor-deposited film as a supercooled glass, in analogy to prior work on birefringence in organic thin films. Importantly, the impact of varying thin-film deposition rate and relative temperature is unified into a single framework, providing a useful tool to predict the SOP formation efficiency for a polar material, as well as in blends of polar materials. Finally, in situ photoluminescence characterization and efficiency measurements reveal that SOP-induced exciton-polaron quenching can be reduced through an appropriate choice of processing conditions, leading to enhanced OLED efficiency.

The Correlation of Plasma Characteristics to the Deposition Rate of Plasma Polymerized Methyl Methacrylate Thin Films in an Inductively Coupled Plasma System

A plasma system attached with one internal coil (for generating inductively coupled plasma) and two sputtering carbon targets was set up to deposit PP-MMA (plasma polymerized methyl methacrylate) thin films. PP-MMA was used as a model material in the present study. In the experiment, the working pressure and Ar/MMA flow ratio were varied, which resulted in the change in plasma conditions as well as the deposition rates. The optical emission spectroscopy (OES) method was applied to identify the presence of the excited species related to the fragmented monomer. In addition, the electron temperature and electron density were determined using the modified Boltzmann plot and line-ratio method, according to the measured OES spectra. The deposition rate of the PMMA film was then correlated with the determined plasma characteristics. To determine the vibrational modes of the deposited PP-MMA films, Fourier transformed infrared spectrometry (FTIR) was used. The highest deposition rate of PP-MMA could be obtained with the optimized working pressure and Ar/MMA volume ratio. This could be related to the plasma characteristics that contribute to the fragmentation of the monomer in the plasma.

Optimization of Atmospheric Pressure Plasma Jet with Single-Pin Electrode Configuration and Its Application in Polyaniline Thin Film Growth.

This study systematically investigated an atmospheric pressure plasma reactor with a centered single pin electrode inside a dielectric tube for depositing the polyaniline (PANI) thin film based on the experimental case studies relative to variations in pin electrode configurations (cases I, II, and III), bluff-body heights, and argon (Ar) gas flow rates. In these cases, the intensified charge-coupled device and optical emission spectroscopy were analyzed to investigate the factors affecting intensive glow-like plasma generation for deposition with a large area. Compared to case I, the intense glow-like plasma of the cases II and III generated abundant reactive nitrogen species (RNSs) and excited argon radical species for fragmentation and recombination of PANI. In case III, the film thickness and deposition rate of the PANI thin film were about 450 nm and 7.5 nm/min, respectively. This increase may imply that the increase in the excited radical species contributes to the fragmentation and recombination due to the increase in RNSs and excited argon radicals during the atmospheric pressure (AP) plasma polymerization to obtain the PANI thin film. This intense glow-like plasma generated broadly by the AP plasma reactor can uniformly deposit the PANI thin film, which is confirmed by field emission-scanning electron microscopy and Fourier transform infrared spectroscopy.

Influence of Target Current on Structure and Performance of Cu Films Deposited by Oscillating Pulse Magnetron Sputtering

To improve the deposition rate of thin films, a novel oscillating pulse magnetron sputtering technology (OPMS) was developed to substitute the traditional high-power impulse magnetron sputtering (HiPIMS). Meanwhile, the relative density and the mechanical properties were also significantly enhanced by this method. In this study, OPMS was used to prepare the pure Cu film, and the effect of the target current on the mode of copper atoms leaving the target (off-target method) under argon gas atmosphere was also investigated. The results showed that with the increase of the target current, the off-target method of copper atoms was transformed from sputtering to evaporation, the surface cracks’ width of the deposited films gradually decreased, and the lattice constants of the Cu films were close to the bulk materials. Furthermore, the deposition rate of Cu films obviously increased from 19 to 103 nm/min. The crystal structures of Cu films showed a face-centered cubic structure, and the grain size increased from 13 to 18 nm, with the target current increased from 2 to 18 A. Moreover, Cu films deposited at currents of 8 and 13 A exhibited excellent adhesion.

One-step preparation of TiO2 anti-reflection coating and cover layer by liquid phase deposition for monocrystalline Si PERC solar cell

This study proposed a one-step liquid phase deposition (LPD) technique to fabricate a front-side anti-reflective coating (ARC) and rear-side cover layer for a passivated emitter and rear cell solar cell. The production process involves the deposition of TiO 2 thin film by using a (NH 4 ) 2 TiF 6 and H 3 BO 3 mixture in a liquid phase filter and cycling deposition system, in which H 3 BO 3 concentration influences the TiO 2 thin film deposition rate, the Ti x Si 1-x O y interfacial layer thickness, and thin film quality. The proposed technique is a one-step, uniform, and large-scale double-sided coating batch process viable for non-vacuum environments, thus enabling a simple manufacturing process and requiring low equipment costs. The fabricated LPD-TiO 2 thin film demonstrated ASTM 5B adhesion and 3.3% uniformity. The technique involves the use of a 0.2 M (NH 4 ) 2 TiF 6 and 0.5 M H 3 BO 3 mixture for deposition under 50 °C to deposit a 68-nm-thick LPD-TiO 2 thin film on pyramid Si wafer. The average reflectance and transmittance of the thin film at 400–800 nm wavelength was 2.7% and 96.5%, respectively. Passivated emitter and rear contact solar cells prepared using the proposed LPD-TiO 2 coating technique demonstrated the following outstanding properties: 9.8 A short-circuit current, 0.68 V open circuit voltage, 81.0% fill factor, and 21.3% photoelectric conversion efficiency (η). The proposed technique demonstrates high potential for use in the low-cost manufacturing of silicon solar cells. • Passivated emitter and rear contact (PERC) solar cells are fabricated. • Front-side anti-reflective and back-side cover layers are prepared in one step. • Low cost and batch-type of TiO 2 films are made by liquid phase deposition (LPD). • PERC solar cell with the LPD functional films shows the better characteristics. • LPD-TiO 2 functional films are favorable for high performance PERC solar cells.

Aerosol assisted atmospheric pressure plasma jet for a high deposition rate of silica-like thin films

This paper investigated thin films deposition processes of silica-like based on the injection of liquid droplets in Atmospheric Pressure Plasma Jet–APPJ operated in open air. An aerosol of hexamethyldisilane is produced by a syringe-pump and injected in a nitrogen post-discharge for different liquid precursor and carrier gas flow rates. For high carrier gas flow, this process enables to form silica-like without addition of oxygen in the plasma phase. Furthermore, this process offers a thin film dynamic deposition rate from 500 to 1400 nm.m.min−1 depending on the carrier gas flow and the film structure departs from silica-like to organosilicon layers for the lowest flow rates. These evolutions are attributed to plasma–droplets interactions related to the transport of droplets, the evaporation of liquid and plasma polymerization.

Experimental Study of the Effect of Precursor Composition on the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process

Abstract Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene, and gallium nitride that are employed in the fabrication of electronic and optical devices. Gallium nitride (GaN) thin films are attractive materials for manufacturing optoelectronic device applications due to their wide band gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of the thin films. The metal-organic chemical vapor deposition (MOCVD) process, which uses compounds that contain metals and organic ligands as precursors in a CVD reactor, is a common technique used to fabricate high-quality GaN thin films. The deposition rate and uniformity of thin films are critical to a successful and useful process. These are determined by the thermal transport processes and chemical reactions occurring in the reactor, and are manipulated by controlling the operating conditions and the reactor geometrical configuration. In this study, the epitaxial growth of GaN thin films on sapphire (Al2O3) substrates is carried out in two commercial MOCVD systems: a vertical rotating disk MOCVD reactor and a close-coupled showerhead MOCVD reactor. The surface morphology and crystal quality of GaN thin films have been examined using atomic force microscopy (AFM) and scanning electron microscope (SEM). This paper focuses on the composition of the precursor and the carrier gases since earlier studies have shown the importance of precursor composition. The results show that the flow rate of trimethylgallium (TMG), which is the main ingredient in the process, has a significant effect on the deposition rate and uniformity of the films. Also, the carrier gas plays an important role in deposition rate and uniformity. Using hydrogen as a carrier gas enhances the quality of the thin film but a lower deposition rate occurs on the wafer surface. On the other hand, a high flow rate of pure nitrogen gas improves the growth rate of the film. However, it decreases the uniformity of the film and promotes carbon contamination on the wafer surface. Thus, the use of an appropriate mixture of hydrogen and nitrogen as the carrier gas can improve the deposition rate and quality of GaN thin films.

Role of H3 + ions in deposition of silicon thin films from SiH4/H2 discharges: modeling and experiments

A 1D fluid model including a detailed chemistry for silane-hydrogen discharges as well as surface reactions to account for deposition and etching processes has been implemented to study the effects of gas pressure (1 to 3.5 Torr) and silane concentration (2 to 10%) on the deposition rate of silicon thin films in a standard RF-PECVD reactor. The thickness of the films and their deposition rate as functions of the process conditions were determined from optical modelling of UV-visible spectroscopic ellipsometry measurements. The experimental values of the deposition rate were compared with results from the 1D fluid model. SiH3 radicals are found to be the main contributor to the computed deposition rates, while H3 + ions play the main role in the etching process. The study reveals that etching by hydrogen ions must be taken into account to reproduce properly the experimental deposition rate. In particular etching by H3 + ions must be taken into account to achieve a good agreement between the experimental and modelled values of the deposition rate as a function of the total gas pressure and the silane fraction in the discharge.

Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

Synthesis and Characterization of Ni-Pt Alloy Thin Films Prepared by Supercritical Fluid Chemical Deposition Technique

Ni-Pt alloy thin films have been successfully synthesized and characterized; the films were prepared by the supercritical fluid chemical deposition (SFCD) technique from Ni(hfac)2·3H2O and Pt(hfac)2 precursors by hydrogen reduction. The results indicated that the deposition rate of the Ni-Pt alloy thin films decreased with increasing Ni content and gradually increased as the precursor concentration was increased. The film peaks determined by X-ray diffraction shifted to lower diffraction angles with decreasing Ni content. The deposited films were single-phase polycrystalline Ni-Pt solid solution and it exhibited smooth, continuous, and uniform distribution on the substrate for all elemental compositions as determined by scanning electron microscopy and scanning transmission electron microscopy analyses. In the X-ray photoelectron spectroscopy (XPS) analysis, the intensity of the Pt 4f peaks of the films decreased as the Ni content increased, and vice versa for the Ni 2p peak intensities. Furthermore, based on the depth profiles determined by XPS, there was no evidence of atomic diffusion between Pt and Ni, which indicated alloy formation in the film. Therefore, Ni-Pt alloy films deposited by the SFCD technique can be used as a suitable model for catalytic reactions due to their high activity and good stability for various reactions.

Investigation of CsPbBr3 CVD dynamics at various temperatures.

Since the emerging development of CsPbBr3 perovskite, chemical vapor deposition (CVD) has become one of the most promising fabrication techniques by which to precisely deposit uniform perovskite thin films. However, there have been few reports on the growth dynamics and chemical reaction parameters (e.g., activation energy) for perovskite CVD. In this work, different deposition rates of CVD-grown CsPbBr3 thin films were obtained at different substrate temperatures. Dynamics equations were developed to relate the inflow rates, desorption coefficients and concentrations of reactants on the substrates. Only a small amount of reactant became activated at low temperature and a small amount of PbBr2 resided on the substrate at high temperature, and accordingly the maximal deposition rate was achieved at 250 °C. The Arrhenius activation energy of CVD-grown CsPbBr3 was also calculated, and found to be 31.64 kJ mol-1. We believe that our work provides a detailed picture of perovskite CVD growth.

Deposition Rate and Electrochromic Properties of Ni Oxide Thin Films Deposited By Sputtering Using Water Vapor As a Reactive Gas

Ni oxide is well known electrochromic (EC) materials. And nickel hydroxide (Ni (OH)2) and oxyhydroxide (NiOOH) are considered to be electrochemically more active than nickel oxide (NiO). Reactive sputtering is one of the most commonly used techniques for obtaining compound thin films, however, deposition rate of compound thin film is low. We have reported that the deposition rate of sputtered nickel oxide thin film increased remarkably by substrate cooling using a liquid nitrogen and injection of water vapor (H2O) onto the target surface in argon (Ar) atmosphere [1]. In this study, we studied the effect of the direction of water vapor injection and the substrate temperature on deposition rate, composition and EC characteristics of the Ni oxide thin films.Ni oxide thin films were prepared by an RF magnetron sputtering system at substrate temperatures (Ts) of -80 °C and -170 °C. Ar and H2O were used as sputtering gas, and the flow rates of Ar and H2O were kept constant at 2.5 cc/min. H2O was injected onto the substrate or target surface. RF power and sputtering gas pressure were constant at 50 W and 50 mTorr, respectively. Film thickness was measured using a stylus profiler, and deposition rate was calculated using the film thickness and sputtering time. Crystal structure and chemical bonding state of the films were characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR), respectively. Optical and electrical properties of the films were studied by UV-Vis spectroscopy and four probe method. EC properties of the films were evaluated using cyclic voltammetry (CV) and chronoamperometry (CA) in a 1 M KOH aqueous electrolyte.Figure 1 shows the deposition rate of Ni oxide thin films deposited at Ts=-80 °C and -170 °C with the H2O injection onto the substrate or target surface. At Ts=-80 °C, high deposition rates of 30-35 nm/min were obtained regardless of the direction of H2O injection. The deposition rates are much higher than that obtained by conventional reactive sputtering at room temperature (4nm/min) [1]. In contrast, the deposition rate varied from 21 nm/min for H2O injection to substrate 38 nm/min (the highest deposition rate) for H2O injection to target at Ts=-170 °C. Highly transparent films with a transmittance above 80% were obtained regardless of the direction of H2O injection at Ts=-80 °C, however, the transmittances of the films deposited at Ts=-170 °C were low. From the four probe method measurement, the thin film deposited at Ts=-170 °C with H2O injection to substrate was found to be a mixed film of metal Ni and Ni oxide with a resistivity of 3.3×10-4Ωcm. The films deposited at Ts=-80 °C with H2O injection to substrate or target and the film deposited at -170 °C with H2O injection to target were considered to be NiO or Ni(OH)2. CV and CA measurements showed that the film deposited at Ts=-80 °C with H2O injection to target had good cycle stability and large transmittance change of 58% at a wavelength of 600nm.In summary, the deposition rate, chemical composition, and EC properties of the Ni oxide films were found to be strongly dependent on the substrate temperature and the direction of H2O injection. The films deposited with H2O injection to target at Ts=-170 °C showed the highest deposition rate and that deposited at Ts=-80°C with H2O injection to target showed the largest transmittance change.REFERENCES[1] Y. Yokoiwa et al, Jpn. J. Appl. Phys. 58 (2019) 055504. Figure 1

Vapor deposition polymerization of synthetic rubber thin film in a plasma enhanced chemical vapor deposition reactor

AbstractRubber is one of the most commonly used industrial materials worldwide. However, there is a gap in the literature on the production of rubber thin films in nanoscale. When the rubber thin films are produced in nanoscale, they can be used in high‐tech applications where bulk rubbers have never been used before. This study is one of the first investigations to focus on the vapor‐based production of the polyisoprene (PI), which is an important member of the synthetic rubber class. For this purpose, a single‐step, rapid and environmentally friendly method based on plasma enhanced chemical vapor deposition (PECVD) was employed to produce PI thin films using 2‐methyl‐1,3‐butadiene (isoprene). The high‐vapor pressure of isoprene makes it a promising monomer for the production of chemical vapor deposition polymers. The effect of plasma processing parameters on the PI deposition rate was investigated. The deposition rate of PI thin film as high as 40 nm/min was achieved and the contact angle of PI coated bamboo surface was found to be 146.8°. The mechanical durability and laundering tests of PI thin films were performed. Based on this study results, PI thin films produced by PECVD can be used in a number of potential applications.

Effects of Cathode Voltage Pulse Width in High Power Impulse Magnetron Sputtering on the Deposited Chromium Thin Films

Environmentally-safe high-power impulse magnetron sputtering (HiPIMS) technology was utilized to deposit chromium films. This research focused on the influences of the HiPIMS pulse widths on the microstructure of films deposited at different deposition pressures and substrate bias voltages. Under the conditions of the same average HiPIMS power and duty cycle, the deposition rate of the Cr thin film at working pressure 0.8 Pa is slightly higher than at 1.2 Pa. Also, the difference between deposition rates under two pressures decreases with the discharge pulse width. The deposition rate of the short pulse width 60 μs is lowest, but those of 200 and 360 μs are approximately the same. With no or small direct current substrate biasing, the microstructure of films coated at short pulse width is similar to the typical magnetron sputtering deposited films. Elongating the pulse width enhances the ion flux toward the substrate and changes the film structure from individual prism-like columns into tangled 3-point/4-point star columns. Substantial synchronized substrate biasing and longer pulse width changes the preferred orientation of Cr films from Cr (110) to Cr (200) and Cr (211). The films deposited at longer pulse width exhibit a higher hardness due to the reducing of intercolumn voids.

Plasma Diagnostics in Reactive High-Power Impulse Magnetron Sputtering System Working in Ar + H2S Gas Mixture

A reactive high-power impulse magnetron sputtering system (HiPIMS) working in Ar + H2S gas mixture was investigated as a source for the deposition of iron sulfide thin films. As a sputtering material, a pure Fe target was used. Plasma parameters in this system were investigated by a time-resolved Langmuir probe, radio-frequency (RF) ion flux probe, quartz crystal monitor modified for measurement of the ionized fraction of depositing particles, and by optical emission spectroscopy. A wide range of mass flow rates of reactive gas H2S was used for the investigation of the deposition process. It was found that the deposition rate of iron sulfide thin films is not influenced by the flow rate of H2S reactive gas fed into the magnetron discharge although the target is covered by iron sulfide compound. The ionized fraction of depositing particles decreases from r ≈ 40% to r ≈ 20% as the flow rate of H2S, QH2S, changes from 0 to 19 sccm at the gas pressure around p ≈ 1 Pa in the reactor chamber. The electron concentration ne measured by the Langmuir probe at the position of the substrate decreases over this change of QH2S from 1018 down to 1017 m−3

Fabrication of Poly(N-isopropylacrylamide) with Higher Deposition Rate and Easier Phase Transition by Initiated Plasma Enhanced Chemical Vapor Deposition

This study demonstrates the fabrication of thermoresponsive poly(N-isopropylacrylamide) (PNIPAAm) thin films using the initiated PECVD (i-PECVD) method, in which the initiator tert-butyl peroxide was used together with the monomer NIPAAm. The deposition rates, wettability properties, and the low critical solution temperature (LCST) of i-PECVD deposited PNIPAAM were compared with those of classical continuous wave and pulsed PECVD techniques without TBPO. The effect of plasma power, plasma operation mode, substrate temperature and the presence of initiator on the deposition rate and wettability properties of PNIPAAm thin films were investigated. The results showed that it was possible to tune the deposition rate and wettability properties of PNIPAAm thin films by changing the PECVD parameters. The highest deposition rate (47.9 nm/min) and the largest contact angle difference (18.3°) depending on the temperature were obtained using the i-PECVD method. The LCST value of i-PECVD-PNIPAAm was able to be tuned between 31 and 34 °C. Such value was dependent on the presence and amount of the initiator. On the basis of these results, the i-PECVD method can be considered as the most proper approach for producing of PNIPAAm with desired properties.

Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation.

In this study, silicon nitride thin films are deposited on organic polyethylene-naphthalate (PEN) substrates by laser assisted plasma enhanced chemical vapor deposition (LAPECVD) at a low temperature (150 °C) for the purpose of evaluating the encapsulation performance. A plasma generator is placed above the sample stage as conventional plasma enhanced chemical vapor deposition (PECVD) configuration, and the excimer laser beam of 193 nm wavelength illuminated in parallel to the sample surface is coupled to the reaction zone between the sample and plasma source. Major roles of the laser illumination in LAPECVD process are to compete with or complement the plasma decomposition of reactant gases. While a laser mainly decomposes ammonia molecules in the plasma, it also contributes to the photolysis of silane in the plasma state, possibly through the resulting hydrogen radicals and the excitation of intermediate disilane products. It will also be shown that the LAPECVD with coupled laser illumination of 193 nm wavelength improves the deposition rate of silicon nitride thin film, and the encapsulation performance evaluated via the measurement of water vapor transmission rate (WVTR).