Silicon Deposition Research Articles

Plant Silicon Defences Suppress Herbivore Performance, but Mode of Feeding Is Key.

The performance of herbivorous animals depends on the nutritional and defensive traits of the plants they consume. The uptake and deposition of biogenic silicon in plant tissues is arguably the most basic and ubiquitous anti-herbivore defence used by plants, especially grasses. We conducted meta-analyses of 150 studies reporting how vertebrate and invertebrate herbivores performed when feeding on silicon-rich plants relative to those feeding on low-silicon plants. Silicon levels were 52% higher and 32% more variable in silicon-rich plants compared to plants with low silicon, which resulted in an overall 33% decline in herbivore performance. Fluid-feeding herbivore performance was less adversely impacted (-14%) than tissue-chewing herbivores, including mammals (-45%), chewing arthropods (-33%) and plant-boring arthropods (-39%). Fluid-feeding arthropods with a wide diet breadth or those feeding on perennial plant species were mostly unaffected by silicon defences. Unlike many other plant defences, where diet specialisation often helps herbivores overcome their effects, silicon negatively impacts chewing herbivores regardless of diet breadth. We conclude that silicon defences primarily target chewing herbivores and impact vertebrate and invertebrate herbivores to a similar degree.

Stress-Dependent Optical Extinction in Low-Pressure Chemical Vapor Deposition Silicon Nitride Measured by Nanomechanical Photothermal Sensing.

Understanding optical absorption in silicon nitride is crucial for cutting-edge technologies like photonic integrated circuits, nanomechanical photothermal infrared sensing and spectroscopy, and cavity optomechanics. Yet, the origin of its strong dependence on the film deposition and fabrication process is not fully understood. This Letter leverages nanomechanical photothermal sensing to investigate optical extinction κext at a 632.8 nm wavelength in low-pressure chemical vapor deposition (LPCVD) SiN strings across a wide range of deposition-related tensile stresses (200-850 MPa). Measurements reveal a reduction in κext from 103 to 101 ppm with increasing stress, correlated to variations in Si/N content ratio. Within the band-fluctuations framework, this trend indicates an increase of the energy bandgap with the stress, ultimately reducing absorption. Overall, this study showcases the power and simplicity of nanomechanical photothermal sensing for low absorption measurements, offering a sensitive, scattering-free platform for material analysis in nanophotonics and nanomechanics.

Electrodeposition of Silicon in the Low-Temperature LiCl-KCl-CsCl-K2SiF6 Melt Under Direct and Pulse Current

In this work, the effect of electrolysis modes and their parameters on the morphology of the silicon deposits on glassy carbon were studied. In direct current mode it was found that an increase in current density and deposition time changes the morphology of the silicon from a coating to a deposit with a complex surface. Scanning electron microscopy showed that silicon films produced at low current densities and a short deposition time are represented by spherical particles with a diameter of less than 1 μm. The pulse current mode made it possible to increase the cathode density of the deposition current, and the pulse current density to an average of ≈250 mA cm−2 does not lead to the formation of a large amount of dendritic deposit. It was found that a low frequency makes it possible to obtain higher-quality silicon coatings, because when the frequency increases, the coating most often does not cover the entire electrode. The high value of the duty cycle, even at low pulse current densities, always leads to the formation of dendrites. An increase in the total deposition time also leads to an increase in the amount of deposit and the formation of dendrites.

Influence of the Silicon Deposition on the Industrial Silicon Trapping Catalyst

Influence of the Silicon Deposition on the Industrial Silicon Trapping Catalyst

The Effect of Silicon Nanoparticle Size on Cycle and Calendar Life

Lithium-ion batteries are now ubiquitous in modern electronics, electric vehicles, and many other applications. As the battery industry continues to push for better, longer lasting batteries, many have turned to using a different anode material that would provide higher-energy density and require less frequent charges. While graphite is the tried-and-true anode material for lithium-ion batteries, a silicon anode battery could provide up to ten times higher theoretical energy density than graphite. However, there are a lot of challenges standing in the way between silicon anode batteries and commercialization—the large volume expansion of silicon (around 200-300% expansion, compared to graphite at 10%) and the unstable solid-electrolyte-interface (SEI) of silicon results in anodes that mechanically degrade and calendar age faster than their graphite counterparts.Previous research has demonstrated that plasma-enhanced chemical vapor deposition (PECVD) silicon nanoparticles with a hydrophilic coating such as polyethylene oxide (PEO) results in silicon anodes with good cycle life [1, 2, 3, 4]. In this system, smaller particle sizes typically yielded better cyclability than larger particle sizes, which is contrary to conventional wisdom that more surface area is detrimental as it allows for more SEI formation and side reactions. However, since silicon anodes experience large volume changes during cycling, the surface area might not be the dominant contribution to capacity fade. Larger silicon particles result in larger total expansions of the electrode, which causes more mechanical damage like cracks to form, exposing fresh surface area to electrolyte and SEI formation.This research investigates the performances of PEO-coated PECVD Si electrodes with nanoparticles ranging from 3 to 27 nm in diameter. We measure the cycle life at a rate of 0.333C, as well as the calendar lifetimes of each electrode. We characterize each electrode with SEM imaging, tortuosity measurements, and electrochemical impedance spectroscopy to understand the differences in microstructure that contribute to capacity fade and impedance rise.

Silicon: A Powerful Aid for Medicinal and Aromatic Plants against Abiotic and Biotic Stresses for Sustainable Agriculture

Silicon plays a crucial role in enhancing plant tolerance to various abiotic and biotic stresses, including drought, salinity, heavy metals, and pathogen/pest attacks. Its application has shown promising results in improving stress tolerance and productivity in medicinal plants. This review synthesizes findings from numerous studies investigating the mechanisms by which silicon confers stress tolerance, including the regulation of antioxidant systems, water relations, nutrient homeostasis, phytohormone signaling, and stress-responsive gene expression. Additionally, it examines the effects of silicon supplementation on the production of valuable secondary metabolites and essential oils in medicinal plants. Silicon application can significantly mitigate stress-induced damage in plants, including medicinally important species such as borage, honeysuckle, licorice, Damask rose, savory, basil, and eucalyptus. The deposition of silicon in cell walls provides physical reinforcement and acts as a barrier against pathogen invasion and insect herbivory. Furthermore, silicon fertilization can enhance the production of valuable secondary metabolites in medicinal crops under stress conditions. The findings underscore the potential of silicon fertilization as a sustainable strategy for improving the productivity and quality of medicinal crops under changing environmental conditions, highlighting the need for further research to elucidate the molecular mechanisms underlying silicon-mediated stress tolerance and practical applications in medicinal plant cultivation.

Modeling and Analysis of Polarization Losses in Solid Oxide Fuel Cells with Siloxane Contamination

In this study, the degradation of the solid-oxide fuel cell (SOFC) nickel-yttria stabilized zirconia anode under decamethyltetrasiloxane (L4) contamination is examined with experiments and modeling. A model is developed for the polarization losses based on the charge transfer coefficient, α, and diffusion layer thickness, δ, and fitted to the experimental data to understand how the siloxane degrades the SOFC performance with time. The results of the model indicate that the total polarization losses increase approximately 44% over the course of the 180 min experiment at 350 mA cm−2. Activation losses dominate the polarization losses initially but decrease in their total contribution while concentration losses increase. Scanning electron microscopy (SEM) with wavelength dispersive X-ray spectroscopy (WDS) elemental mapping indicates that silicon deposition is highest at the outer edge of the anode and forms a barrier layer to fuel diffusion, increasing concentration losses. When the model is applied to other previous D4 and L4 siloxane experiments conducted over a period of 40 h, similar trends in polarization losses are observed. Polarization losses increase more rapidly with D4 compared to L4 siloxane contamination, with concentration losses increasing the fastest with both types of siloxane.

Challenges in the Synthesis and Processing of Hydrosilanes as Precursors for Silicon Deposition.

Hydrosilanes are highly attractive compounds, which can be processed as liquids with printing technology to amorphous silicon films on nearly any solid substrate. The silicon layers can be processed for electronic devices like transistors or thin-film solar cells. The endothermic character of hydrosilanes with their positive enthalpies of formation results in favorable properties for processing. The larger the molecules, the lower their decomposition temperature and the higher their photoactivity. Cyclic hydrosilanes such as cyclopentasilane and cyclohexasilane can be easily deposited. The branched neopentasilane is more difficult to deposit but yields better-quality films after processing. The key challenge is the complex synthesis of the precursors and the hydrosilanes. The available preparative methods are presented in this review and their advantages and disadvantages are evaluated. The following synthesis methods are presented and discussed in this article: Wurtz coupling and other reductive coupling processes, dehydrogenative coupling of silanes, plasma synthesis of chlorinated polysilanes, amine- or chloride-induced disproportionations, and transformation of monosilane to higher silanes. Plasma synthesis is already carried out today as a continuous industrial process. The most effective synthesis methods in the laboratory are currently amine- and chloride-induced disproportionations. There is a great need to further optimize the syntheses of hydrosilanes and to develop new simple synthesis variants.

Silicon induces ROS scavengers, hormone signalling, antifungal metabolites, and silicon deposition against brown stripe disease in sugarcane.

Bipolaris setariae is known to cause brown stripe disease in sugarcane, resulting in significant yield losses. Silicon (Si) has the potential to enhance plant growth and biotic resistance. In this study, the impact of Si on brown stripe disease was investigated across susceptible and resistant sugarcane varieties, utilizing four Si concentrations (0, 15, 30, and 45 g per barrel of Na2SiO3·5H2O). Si significantly reduced the incidence of brown stripe disease (7.41-59.23%) and alleviated damage to sugarcane growth parameters, photosynthetic parameters, and photosynthetic pigments. Submicroscopic observations revealed that Si induced the accumulation of silicified cells in leaves, reduced spore accumulation, decreased stomatal size, and protected organelles from B. setariae damage. In addition, Si increased the activity of antioxidant enzymes (superoxide dismutase, peroxidase, and catalase), reduced reactive oxygen species production (malondialdehyde and hydrogen peroxide) and modulated the expression of genes associated with hormone signalling (PR1, TGA, AOS, AOC, LOX, PYL8, and SnRK2), leading to the accumulation of abscisic acid and jasmonic acid and inhibiting SA synthesis. Si also activated the activity of metabolism-related enzymes (polyphenol oxidase and phenylalanine ammonia lyase) and the gene expression of PAL-dependent genes (PAL, C4H, and 4CL), regulating the accumulation of metabolites, such as chlorogenic acid and lignin. The antifungal test showed that chlorogenic acid (15ug μL-1) had a significant inhibitory effect on the growth of B. setariae. This study is the first to demonstrate the inhibitory effect of Si on B. setariae in sugarcane, highlighting Si as a promising and environmentally friendly strategy for managing brown stripe disease.

Near‐Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals

AbstractThe chemical vapor deposition of silicon on a patterned silicon substrate leads to the formation of 3D microcrystals, which, due to their inclined top facets and high aspect ratio, produce a light‐trapping effect enhancing the optical absorption in the near‐infrared (NIR). In this work, it is demonstrated that Si microcrystals can form the building blocks of a new class of NIR sensitive photodetectors operating in a linear or avalanche regime. Microcrystal‐based devices are designed by coupling a 2D kinetic‐growth model with a Poisson drift‐diffusion solver and fabricated by combining electron beam lithography and low‐energy plasma‐enhanced chemical vapor deposition (LEPECVD). The optoelectronic properties of microcrystal‐based p–i–n photodiodes are investigated both theoretically and experimentally by means of finite‐difference time‐domain (FDTD) simulations and responsivity measurements. At 1000 nm wavelength, the responsivity of microcrystal‐based devices is six times higher than that of an equivalent mesa diode. Moreover, the photocurrent gains of Si microcrystals operating as an avalanche photodiode (APD), at the same wavelength, reaches 2 × 104 demonstrating the potentialities of substrate patterning, combined with epitaxial growth, for amplified photodetection applications.

RHEED Study of the Epitaxial Growth of Silicon and Germanium on Highly Oriented Pyrolytic Graphite

Two-dimensional silicon (silicene) and germanium (germanene) have attracted special attention from researchers in recent years. At the same time, highly oriented pyrolytic graphite (HOPG) and graphene are some of the promising substrates for growing silicene and germanene. However, to date, the processes occurring during the epitaxial growth of silicon and germanium on the surface of such substrates have been poorly studied. In this work, the epitaxial growth of silicon and germanium is studied directly during the process of the molecular beam epitaxy deposition of material onto the HOPG surface by reflection high-energy electron diffraction (RHEED). In addition, the obtained samples are studied by Raman spectroscopy and scanning electron microscopy. A wide range of deposition temperatures from 100 to 800 °C is considered and temperature intervals are determined for various growth modes of silicon and germanium on HOPG. Conditions for amorphous and polycrystalline growth are distinguished. Diffraction spots corresponding to the lattice constants of silicene and germanene are identified that may indicate the presence of areas of graphene-like 2D phases during epitaxial deposition of silicon and germanium onto the surface of highly oriented pyrolytic graphite.

Power-efficient programmable integrated multiport photonic interferometer in CMOS-compatible silicon nitride

Silicon nitride (SiN x ) is an appealing waveguide material choice for large-scale, high-performance photonic integrated circuits (PICs) due to its low optical loss. However, SiN x PICs require high electric power to realize optical reconfiguration via the weak thermo-optic effect, which limits their scalability in terms of device density and chip power dissipation. We report a 6-mode programmable interferometer PIC operating at the wavelength of 1550 nm on a CMOS-compatible low-temperature inductance coupled plasma chemical vapor deposition (ICP-CVD) silicon nitride platform. By employing suspended thermo-optic phase shifters, the PIC achieves 2× improvement in compactness and 10× enhancement in power efficiency compared to conventional devices. Reconfigurable 6-dimensional linear transformations are demonstrated including cyclic transformations and arbitrary unitary matrices. This work demonstrates the feasibility of fabricating power-efficient large-scale reconfigurable PICs on the low-temperature ICP-CVD silicon nitride platform.

Plasma-Assisted N2O Oxidation (PANO) in an Industrial Direct Plasma Reactor for TOPCon Production

Plasma-Enhanced Chemical Vapor Deposition (PECVD) is an attractive tool for TOPCon production, as it enables uniformly in situ doped amorphous silicon (a-Si) and dielectric layer depositions with high throughput. However, a lean process requires in situ interfacial oxide growth in the same tool. In this work, we use Plasma-Assisted N2O Oxidation (PANO) in an industrial kHz direct plasma reactor (centrotherm c.PLASMA) to grow the oxide and deposit in situ phosphorus doped a-Si(n) as well as SiNx on asymmetric lifetime samples. Before optimization, the oxide thickness is non uniform on the wafer, and we show that it correlates with the passivation, the contact resistivity, and the doping profile in n-type TOPCon test structures. The passivation seems to benefit more from moderate in-diffusion in the case with PANO than in the case with thermal oxidation. This is probably due to enhanced field-effect passivation compensating for lower chemical passivation, which likely results from plasma-induced damage. After studying the influence of PANO process parameters on the oxide thickness and uniformity, we optimize them to obtain a non-uniformity as low as ±2% and a recombination current density down to 2.3 fA/cm² on planar wafers.

Unveiling mechanisms of silicon-mediated resistance to chromium stress in rice using a newly-developed hierarchical system

Silicon (Si) has been well-known to enhance plant resistance to heavy-metal stress. However, the mechanisms by which silicon mitigates heavy-metal stress in plants are not clear. In particular, information regarding the role of Si in mediating resistance to heavy-metal stress at a single cell level is still lacking. Here, we developed a hierarchical system comprising the plant, protoplast, and suspension cell subsystems to investigate the mechanisms by which silicon helps to alleviate the toxic effects of trivalent chromium [Cr(III)] in rice. Our results showed that in whole-plant subsystem silicon reduced shoot Cr(III) concentration, effectively alleviating Cr(III) stress in seedlings and causing changes in antioxidant enzyme activities similar to those observed at lower Cr(III) concentrations without silicon added. However, in protoplast subsystem lacking the cell wall, no silicon deposition occurred, leading to insignificant changes in cell survival or antioxidation processes under Cr(III) stress. Conversely, in suspension cell subsystem, silicon supplementation substantially improved cell survival and changes in antioxidant enzyme activities under Cr(III) stress. This is due to the fact that >95% of silicon was on the cell wall, reducing Cr(III) concentration in cells by 7.7%–10.4%. Collectively, the results suggested that the silicon deposited on the cell wall hindered Cr(III) bio-uptake, which consequently delayed Cr(III)-induced changes in antioxidant enzyme activities. This research emphasizes the significance of cell walls in Si-alleviated heavy-metal stress and deepens our understanding of silicon functioning in plants. Furthermore, the hierarchical system has great potential for application in studying the functioning of other elements in plant cell walls.

Exogenous silicon induces aluminum tolerance in white clover (Trifolium repens) by reducing aluminum uptake and enhancing organic acid secretion.

Excessive aluminum (Al) in acidic soils is a primary factor that hinders plant growth. The objective of the present study was to investigate the effect and physiological mechanism of exogenous silicon (Si) in alleviating aluminum toxicity. Under hydroponic conditions, 4 mM Al significantly impeded the growth of white clover; however, pretreatments with 1 mM Si mitigated this inhibition, as evidenced by notable changes in growth indicators and physiological parameters. Exogenous silicon notably increased both shoot and root length of white clover and significantly decreased electrolyte leakage (EL) and malondialdehyde (MDA) content compared to aluminum treatments. This positive effect was particularly evident in the roots. Further analysis involving hematoxylin staining, scanning electron microscopy (SEM), and examination of organic acids (OAs) demonstrated that silicon relieved the accumulation of bioactive aluminum and ameliorated damage to root tissues in aluminum-stressed plants. Additionally, energy-dispersive X-ray (EDX) analysis revealed that additional silicon was primarily distributed in the root epidermal and cortical layers, effectively reducing the transport of aluminum and maintaining the balance of exchangeable cations absorption. These findings suggest that gradual silicon deposition in root tissues effectively prevents the absorption of biologically active aluminum, thereby reducing the risk of mineral nutrient deficiencies induced by aluminum stress, promoting organic acids exudation, and compartmentalizing aluminum in the outer layer of root tissues. This mechanism helps white clover alleviate the damage caused by aluminum toxicity.

Porous Silicon and Silicon Nanotubes with Embedded FePt Nanoparticles Investigated by High Temperature Magnetic Measurements

Porous silicon (PSi) and silicon nanotubes (SiNTs) are presented as a platform for filling with FePt nanostructures. The difference of the magnetic characteristics between the two systems is figured out. Furthermore, the FePt filled templates are compared with the same template materials filled with Ni/Co by electrodeposition.The porous silicon is produced by anodization of a highly doped n-type silicon wafer in a 10 wt% HF solution. The produced morphology offers separated pores of about 50 nm and a mean distance between the pores of 50 nm. The SiNTs are fabricated in using an array of ZO wires as template, subsequent silicon deposition and finally etching off the ZO. The inner diameter of the tubes and also the wall thickness can be tuned by the fabrication process. In this work SiNTs with comparable inner diameter to the PSi structure and a wall of about 10 nm are used (1). FePt nanoparticles (NPs) are deposited electroless inside the pores and the tubes, respectively whereat the molar ratio of Fe is varied. For this purpose a 3 component solution consisting of H2PtCl6, Fe(NO3)3 and citric acid is used, whereas the ratio of the components is modified.The varying magnetic response of the different composite systems, porous silicon and silicon nanotubes is investigated. PSi/FePt shows a higher coercivity and remanence than SiNTs/FePt and thus a higher hard magnetic performance. The variation of the coercivities between SiNTs/FePt and PSi/FePt is about 57%.Considering the FePt deposits with different molar ratio of Fe the coercivities vary in a range of 5% in the case of both template types. Comparing FePt loaded samples with Co loaded samples in all cases an increase of the coercivity and of the remanence is observed for FePt, whereat in the case of PSi as template material the increase is significantly stronger than in the case of SiNTs samples. Figure 1 shows the comparison of the hysteresis of PSi and SiNTs filled with FePt NPs.The influence of high temperatures on the nanocomposite samples is of interest, as well as the high temperature magnetic behavior. Therefore, beside low temperature and room temperature magnetic measurements, the magnetic behavior of the samples is investigated at high temperatures up to 1273 K.(1) K. Rumpf, et.al, ECS Transactions 98 (2020) 37

Extracellular silicon (Si) nanocoating induced by cationic polymers enhances heavy metal resistance in both Si-accumulating and non-Si-accumulating plants

Heavy metal contamination poses a significant threat to food security, requiring the development of plant protection measures. Silicon (Si) deposition on rice roots can inhibit the uptake and translocation of heavy metal ions. However, the slow process of Si polymerization limits its utilization by many plants. This study explored the use of cation-induced silicic acid polymerization to rapidly form extracellular Si nanocoatings on plant roots using ten cationic polymeric materials. Performance, safety, and cost-effectiveness were comprehensively evaluated in enhancing rice's resistance to heavy metals, particularly trivalent chromium. Guar hydroxypropyl trimonium chloride (GHPT) showed the most promising results among the materials studied. A treatment procedure involving immersion in GHPT and silicic acid was found to be effective when repeated twice for 20 min each time. This method effectively doubled Si concentration in rice roots and reduced shoot chromium concentration by 67%. Furthermore, this approach was successfully applied to pakchoi, enabling Si utilization in this non-Si-accumulating plant. The Si concentration in pakchoi roots increased to levels similar to rice (1577.5 μg/g), and shoot chromium concentration decreased by 75.0%, accompanied by a 66.2% reduction in chromium translocation factor. These findings provide a safe, economical and practical solution to reduce heavy metal stress.

Composition-adjustable silicon-germanium alloy films based on porous silicon matrices

Morphology and crystalline structure of silicon-germanium alloys formed by rapid thermal processing of germanium-filled porous silicon layers are evaluated. Two types of porous silicon are employed as matrices for electrochemical pore filling using GeO2 aqueous solutions and subsequently compared, the first one formed by electrochemical anodization and the second by silver-assisted chemical etching of monocrystalline silicon. The resulting alloys’ structure and composition are investigated using scanning electron microscopy, energy-dispersive X-ray analysis, Raman spectroscopy and X-ray powder diffraction. It is shown that by varying the porosity of the initial matrix (by adjusting anodization current density for anodic porous silicon or changing silver deposition time for structures produced by metal-assisted etching) in the range from 55 to 75%, Si1-xGex alloys with germanium fractions of x = 0.31 to x = 0.83 can be formed, as indicated by Raman spectroscopy. It is concluded that composition-adjustable layers of silicon-germanium can be successfully formed on either type of porous silicon layer. While an increase in porosity generally leads to a decrease in silicon fractions in the alloy, the steepness of this effect varies heavily depending on the type of porous matrix used and should be considered independently for anodic porous silicon and silicon nanowires.

A novel configuration design of strong and ductile (TiC + Ti5Si3)/Ti laminated composites

To solve the low ductility of the uniformly particle-reinforced composites, novel (TiC + Ti5Si3)/Ti laminated composites are fabricated by electrophoretic deposition (EPD) silicon (Si) powders + graphene oxide (GOs) and spark plasma sintering (SPS) technology. The microstructure evolution, mechanical properties, strengthening and fracture mechanisms of laminated composites were systematically studied. Results show that the GOs and Si powders are evenly attached to Ti foils after EPD, and the (TiC + Ti5Si3) reinforcements are in situ formed at the interface after SPS. TiC phases are distributed along the original interface, and most of the Ti5Si3 reinforcements are located in the Ti foil matrix. The 50 μm - 120 s sample possesses obvious shell nacre containing particular ‘‘brick-and-mortar’’ architecture structure. And the 100 μm - 120 s sample displays excellent room temperature tensile properties, with the ultimate tensile strength (UTS) of 759 MPa, yield strength (YS) of 688 MPa and elongation (EL) of 24.3 %. The change of microstructure leads to the increase of strength, which is caused by the solid-solution strengthening, grain boundary strengthening and reinforcements strengthening. At this time, the design of laminated structure can change the crack propagation direction, extend the crack propagation path and thereby increases the energy required for crack propagation, obstructing the fracture of composites. This work provides an effective method to prepare Ti matrix composites with synergy of strength and ductility.

Gold-coated porous silicon as a SERS substrate for near-infrared excitation: Off- and on-resonant conditions

Porous silicon, being one of the most popular SERS-active substrates, was in this work utilized for near-infrared 1064 nm excitation which minimizes the radiation-induced degradation of molecules. The production of porous silicon photonic crystals and deposition of gold nanoparticles, as the two possible methods for quenching the crystal silicon band-gap photoluminescence, were thoroughly discussed. For the off-resonant laser excitation conditions, gold nanoparticles were grown on porous silicon by the immersion plating procedure. For the on-resonant conditions, gold nanorods with the appropriate aspect ratio were synthesized by a seed-mediated protocol and deposited on the porous silicon surface. The capability of these metal-dielectric substrates toward SERS enhancement was evaluated using crystal violet dye and the advantages and drawbacks of both methods were addressed in detail. The obtained detection limits for the crystal violet dye were in the range between 10−7 and 10−8 M. So far, gold-coated porous silicon SERS-active substrates for near-infrared 1064 nm excitation have not been reported, both for the off- and on-resonant regimes.