Depopulation Of One-dimensional Subbands Research Articles

V-grooved InGaAs quantum-wire FET fabricated under an As2 flux in molecular-beam epitaxy

Abstract V-grooved InGaAs/InAlAs quantum-wire field-effect transistors are realized by selective molecular-beam epitaxy and their transport characteristics are studied. The QWR structures are formed using a combination of atomic hydrogen and a dimer arsenic source. An analysis of the depopulation of one-dimensional sub-bands in these structures reveals little evidence for sidewall depletion. Sub-band splittings as large as 6.6 meV are obtained in the wires, indicating their excellent one-dimensional transport properties.

Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

Ridge-type InGaAs/InAlAs quantum-wire field-effect transistors are realized by selective molecular-beam epitaxy and their transport characteristics are studied. An analysis of the depopulation of one-dimensional subbands in these structures reveals little evidence for sidewall depletion, and yields an estimate for the carrier density in good agreement with that found in two-dimensional InGaAs/InAlAs heterojunctions. Subband splittings as large as 7.4 meV are obtained in the wires, indicating their excellent one-dimensional transport properties.

Magnetotransport in narrow In0.53Ga0.47As/InP wires

We have fabricated dry etched In0.53Ga0.47As quantum wires with geometrical widths varying from 80 nm to 50 μm from modulation-doped heterostructures. All wires show finite resistances even at 40 mK without illumination. The magnetotransport measurements show clearly the depopulation of one-dimensional subbands, universal conductance fluctuations, and an anomalous magnetoresistance peak.