Depleted Monolithic Active Pixel Sensor Research Articles

First test beam of the DMAPS-based proton tracker at the pMBRT facility at the Curie Institute

Objective.Proton radiotherapy's efficacy relies on an accurate relative stopping power (RSP) map of the patient to optimise the treatment plan and minimize uncertainties. Currently, a conversion of a Hounsfield Units map obtained by a common x-ray computed tomography (CT) is used to compute the RSP. This conversion is one of the main limiting factors for proton radiotherapy. To bypass this conversion a direct RSP map could be obtained by performing a proton CT (pCT). The focal point of this article is to present a proof of concept of the potential of fast pixel technologies for proton tracking at clinical facilities.Approach.A two-layer tracker based on the TJ-Monopix1, a depleted monolithic active pixel sensor (DMAPS) chip initially designed for the ATLAS, was tested at the proton minibeam radiotherapy beamline at the Curie Institute. The chips were subjected to 100 MeV protons passing through the single slit collimator (0.4×20mm2) with fluxes up to1.3×107p s-1 cm-2. The performance of the proton tracker was evaluated with GEANT4 simulations.Main results.The beam profile and dispersion in air were characterized by an opening of 0.031 mm cm-1, and aσx=0.172mm at the position of the slit. The results of the proton tracking show how the TJ-Monopix1 chip can effectively track protons in a clinical environment, achieving a tracking purity close to 70%, and a position resolution below 0.5 mm; confirming the chip's ability to handle high proton fluxes with a competitive performance.Significance.This work suggests that DMAPS technologies can be a cost-effective alternative for proton imaging. Additionally, the study identifies areas where further optimization of chip design is required to fully leverage these technologies for clinical ion imaging applications.

Quad-module characterization with the MALTA monolithic pixel chip

The MALTA silicon pixel detector combines a depleted monolithic active pixel sensor (DMAPS) with a fully asynchronous front-end and readout. It features a high granularity pixel matrix with a 36.4 μm symmetric pixel pitch, low power consumption of <1 μW/pixel and low material budget with detector thicknesses as little as 50 μm. It achieves a radiation hardness to 100MRad TID and more than 1 × 10E15 1 MeV neq/cm2 with a time resolution of <2 ns (Pernegger et al., 2023).In order to cover large sensitive areas efficiently with a minimum of power and data connections the development of modules, comprising of up to 4 MALTA detectors, is studied.This contribution presents the beam test performance of parallel and serial powered MALTA 4-chip modules in an effort to characterize the sensor’s chip-to-chip data and power transmission and prepare the production of a first prototype of an ultra-light weight 4-chip module on a flexible circuit with next generation MALTA2 sensors.

Radiation hardness of MALTA2 monolithic CMOS imaging sensors on Czochralski substrates

MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS sensor imaging technology. In order to comply with the requirements of high energy physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce random telegraph signal (RTS) noise, and optimise the charge collection geometry. Compared to its predecessors, MALTA2 targets the use of a high-resistivity, thick Czochralski (Cz) substrates in order to demonstrate radiation hardness in terms of detection efficiency and timing resolution up to 3 ×\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\ imes $$\\end{document} 1015\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^{15}$$\\end{document} 1 MeV neq/cm2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\mathrm {n_{eq}/{cm}^2}$$\\end{document} with backside metallisation to achieve good propagation of the bias voltage. This manuscript shows the results that were obtained with non-irradiated and irradiated MALTA2 samples on Cz substrates from the CERN SPS test beam campaign from 2021 to 2023 using the MALTA telescope.

Detector development for particle physics

In high-energy physics experiments, tracking and vertexing is nowadays mostly done using semiconductor detectors. Among the employed detectors are hybrid pixel sensors, passive sensors and recently also depleted monolithic active pixel sensors (DMAPS), which integrate the particle sensor with front-end electronics. Currently, the dominant material for the production of such sensors is silicon. However, the use of silicon carbide is currently being investigated. In this work we report on our progress on the development of silicon-based DMAPS. Further, we present two approaches for reading out passive silicon carbide detectors at particle rates from the kHz to the GHz range.

MALTA-Cz: a radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The “MALTA-Czochralski (MALTA-Cz)” full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granularity, high hit-rate capability, fast response time and superior radiation tolerance. The design targets radiation hardness of > 1015 (1 MeV) neq/cm2 and 100 Mrad TID. The sensor shall operate as tracking sensor with a spatial resolution of ≈ 10 μm and be able to cope with hit rates in excess of 100 MHz/cm2 at the LHC bunch crossing frequency of 40 MHz. The 512 × 512 pixel sensor uses small collection electrodes (3.5 μm) to minimize capacitance. The small pixel size (36.4 × 36.4 μm2) provides high spatial resolution. Its asynchronous readout architecture is designed for high hit-rates and fast time response in triggered and trigger-less detector applications. The readout architecture is designed to stream all hit data to the multi-channel output which allows an off-sensor trigger formation and the use of hit-time information for event tagging.The sensor manufacturing has been optimised through process adaptation and special implant designs to allow the manufacturing of small electrode DMAPS on thick high-resistivity p-type Czochralski substrate. The special processing ensures excellent charge collection and charge particle detection efficiency even after a high level of radiation. Furthermore the special implant design and use of a Czochralski substrate improves the sensor's time resolution. This paper presents a summary of sensor design optimisation through process and implant choices and TCAD simulation to model the signal response. Beam and laboratory test results on unirradiated and irradiated sensors have shown excellent detection efficiency after a dose of 2 × 1015 1 MeV neq/cm2. The time resolution of the sensor is measured to be σ = 2 ns.

Optimizing Time Resolution Electronics for DMAPs

Depleted Monolithic Active Pixel Sensors (DMAPSs) are foreseen as an interesting choice for future high-energy physics experiments, mainly because of the reduced fabrication costs. However, they generally offer limited time resolution due to the stringent requirements of area and power consumption imposed by the targeted spatial resolution. This work describes a methodology to optimize the design of time-to-digital converter (TDC)-based timing electronics that takes advantage of the asymmetrical shape of the pulse at the output of the analog front-end (AFE). Following that methodology, a power and area efficient implementation fully compatible with the RD50-MPW3 solution is proposed. Simulation results show that the proposed solution offers a time resolution of 2.08 ns for a range of energies from 1000 e− to 20,000 e−, with minimum area and zero quiescent in-pixel power consumption.

CMOS MAPS upgrade for the Belle II Vertex Detector

The success of the Belle II experiment in Japan relies on the very high instantaneous luminosity, close to 6×1035 cm−2 s−1, expected from the SuperKEKB collider. The corresponding beam conditions at such luminosity levels generate large rates of background particles and creates stringent constraints on the vertex detector, adding to the physics requirements. Current prospects for the occupancy rates in the present vertex detector (VXD) at full luminosity fall close to the acceptable limits and bear large uncertainties. In this context, the Belle II collaboration is considering the possibility to install an upgraded VXD system around 2027 to provide a sufficient safety margin with respect to the expected background rate and possibly enhance tracking and vertexing performance.The VTX collaboration has started the design of a fully pixelated VXD, called VTX, based on fast and highly granular Depleted Monolithic Active Pixel Sensors (DMAPS) integrated on light support structures.The two main technical features of the VTX proposal are the usage of a single sensor type over all the layers of the system and the overall material budget below 2% of radiation length, compared to the current VXD which has two different sensor technologies and about 3% of radiation length. A dedicated sensor (OBELIX), taylored to the specific needs of Belle II, is under development, evolving from the existing TJ-Monopix2 sensor. The time-stamping precision below 100 ns will allow all VTX layers to take part in the track finding strategy contrary to the current situation. The first two detection layers are designed according to a self-supported all-silicon ladder concept, where 4 contiguous sensors are diced out of a wafer, thinned and interconnected with post-processed redistribution layers. The outermost detection layers follow a more conventional approach with a cold plate and carbon fibre support structure, and light flex cables interconnecting the sensors.This document will review the context, technical details and development status of the proposed Belle II VTX.

Latest developments and characterisation results of DMAPS in TowerJazz 180nm for High Luminosity LHC

The last couple of years have seen the development of Depleted Monolithic Active Pixel Sensors (DMAPS) fabricated in TowerJazz 180nm with a process modification to increase the radiation tolerance. While many of MAPS developments focus on low radiation environment, we have taken the development to high radiation environment like pp-experiments at High Luminosity LHC. DMAPS are a cost effective and lightweight alternative to state-of-the-art hybrid detectors if they can fulfil the given requirements for radiation hardness, signal response time and hit rate capability. The MALTA and Mini-MALTA sensors have shown excellent detection efficiency after irradiation to the life time dose expected at the outer layers of the ATLAS pixel tracker Upgrade. Our development focuses on providing large pixel matrixes with excellent time resolution (<2ns) and tracking. This publication will discuss characterisation results of the DMAPS devices with special focus on the new MALTA2 sensor and will show the path of future developments

Recent results with radiation-tolerant TowerJazz 180 nm MALTA sensors

To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation-hard, monolithic CMOS sensors. We have designed, manufactured and tested the MALTA series of sensors, which are DMAPS in the 180 nm TowerJazz CMOS imaging technology. MALTA have a pixel pitch well below current hybrid pixel detectors, high time resolution (<2ns) and excellent charge collection efficiency across pixel geometries. These sensors have a total silicon thickness of between 50–300 μm, implying reduced material budgets and multiple scattering rates for future detectors which utilise such technology. Furthermore, their monolithic design bypasses the costly stage of bump-bonding in hybrid sensors and can substantially reduce detector costs. This contribution presents the latest results from characterisation studies of the MALTA2 sensors, including results demonstrating the radiation tolerance of these sensors.

Development and characterization of a DMAPS chip in TowerJazz [formula omitted] [formula omitted] technology for high radiation environments

The increasing availability of commercial CMOS processes with high-resistivity wafers has fueled the R&D of depleted monolithic active pixel sensors (DMAPS) for use in high energy physics experiments. One of these developments is a series of monolithic pixel detectors with column-drain readout architecture and small collection electrode allowing for low-power designs (TJ-Monopix). It is designed in a 180nm TowerJazz CMOS process and features a pixel size of 33μm×33μm. The efforts and improvements on the front-end electronics and sensor design of the current iteration TJ-Monopix2 increase the radiation hardness and efficiency while lowering the threshold and noise.

Design and characterization of depleted monolithic active pixel sensors within the RD50 collaboration

The CERN RD50 CMOS working group is designing and characterizing depleted monolithic active pixel sensors (DMAPS) for use in high radiation environments fabricated in the LFoundry 150 nm HV-CMOS process. The first iteration of this chip, RD50-MPW1, suffered from high leakage current, low breakdown voltage and crosstalk. In order to mitigate these shortcomings, an improved version with improved pixel geometry was designed. The RD50-MPW2 integrates a matrix of 8 × 8 pixels with analog front-end, but no digital readout. It was delivered in early 2020 and characterized within lab-measurements, an irradiation campaign and test beams. To read out the chips the Caribou DAQ system is used with a custom chipboard as well as specific firmware and software modules. A third iteration of the chip, the RD50-MPW3, has been submitted to LFoundry in December 2021 and is expected to be delivered in May 2022. It will keep the well working analog part of its predecessor, completed by an in-pixel digital logic and an optimized peripheral readout for effective pixel configuration and fast serial data transmission. The chip will comprise a matrix of 64 × 64 pixels arranged in 32 double-columns. We will present an overview of the RD50 HV-CMOS activities focusing on the measurement results of RD50-MPW2 chip, as well as the design and readout of the RD50-MPW3.

Evaluation of the DECAL Fully Depleted monolithic sensor for outer tracking and digital calorimetry

The DECAL sensor is a depleted monolithic active pixel sensor (DMAPS) being developed to explore technological solutions for digital electromagnetic calorimeters. For this application, the number of pixels above threshold is used to estimate the shower energy and therefore the pixel size is required to be sufficiently small to avoid hit saturation. The DECAL and DECAL Fully Depleted (FD) sensors have been designed and fabricated in the TowerJazz 180 nm CMOS standard and modified imaging processes, respectively. The latter uses modifications to the implant configuration that improve charge collection and radiation hardness, including to the levels required for barrel ECAL regions of FCC-hh (few 1015 neq/cm2). Both DECAL variants feature a matrix of 64 × 64 pixels with a pitch of 55μm, read out every 25 ns. For DECAL FD, the logic has been modified to extend the in-pixel comparator threshold trim range from five to six bits, with the sixth bit used to de-activate the comparator. Characterisation results for the DECAL FD, including the pixel equalisation matrix, threshold scans testing under monochromatic X-rays and 90Sr source, are presented.

Progress in DMAPS developments and first tests of the Monopix2 chips in 150 nm LFoundry and 180 nm TowerJazz technology

Depleted Monolithic Active Pixel Sensors (DMAPS) are monolithic pixel detectors with high-resistivity substrates designed for use in high-rate and high-radiation environments. They are produced in commercial CMOS processes, resulting in relatively low production costs and short turnaround times, and offer a low material budget. LF-Monopix1 and TJ-Monopix1 are large DMAPS prototypes produced in 150 nm LFoundry and 180 nm TowerJazz technology, respectively, that follow two different design concepts regarding the charge collection electrode. Prototypes of both development lines have been extensively tested and characterized over the last years. The second-generation Monopix prototypes, Monopix2, were recently produced. They were designed to address the shortcomings of their predecessors, in particular related to radiation hardness and cross talk, and further improve upon their performance. The latest measurements with LF-Monopix1 and TJ-Monopix1 concerning hit efficiency, depletion, and radiation hardness as well as the initial test results of the new Monopix2 prototypes are presented.

Timing performance of radiation hard MALTA monolithic pixel sensors

The MALTA family of Depleted Monolithic Active Pixel Sensor (DMAPS) produced in Tower 180 nm CMOS technology targets radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness up to 2 × 1015 1 MeV neq/cm2 and time resolution below 2 ns, with uniform charge collection efficiency across the pixel of size 36.4 × 36.4 μm2 with a 3 μm2 electrode size. The MALTA2 demonstrator produced in 2021 on high-resistivity epitaxial silicon and on Czochralski substrates implements a new cascoded front-end that reduces the RTS noise and has a higher gain. This contribution shows results from MALTA2 on timing resolution at the nanosecond level from the CERN SPS test-beam campaign of 2021.

DMAPS Monopix developments in large and small electrode designs

LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150nm LFoundry and 180nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows a design with large charge collection electrode where readout electronics are placed inside. Generally, this offers a homogeneous electrical field in the sensor and short drift distances. TJ-Monopix1 employs a small charge collection electrode with readout electronics separated from the electrode and an additional n-type implant to achieve full depletion of the sensitive volume. This approach offers a low sensor capacitance and therefore low noise and is typically implemented with small pixel size. Both detectors have been characterized before and after irradiation using lab tests and particle beams.

Design of large scale sensors in 180 nm CMOS process modified for radiation tolerance

The last couple of years have seen the development of Depleted Monolithic Active Pixel Sensors (DMAPS) fabricated with a process modification to increase the radiation tolerance. Two large scale prototypes, Monopix with a column drain synchronous readout, and MALTA with a novel asynchronous architecture, have been fully tested and characterized both in the laboratory and in test beams. This showed that certain aspects have to be improved such as charge collection after irradiation and the output data rate. Some improvements resulting from extensive TCAD simulations were verified on a small test chip, Mini-MALTA. A detailed cluster analysis, using data from laboratory and test beam studies, at different biases, for high and low thresholds and before and after irradiation is presented, followed by detailed simulations showing that the digital architecture for both chips is capable of dealing with data rates of around 80 MHz/cm2 similar to what it is expected in the outer layer of the ATLAS inner tracker upgrade for the HL-LHC. The data rate capability and output bandwidth are studied using realistic hits generated by the ATLAS detector simulation framework.

CACTUS: a depleted monolithic active timing sensor using a CMOS radiation hard technology

The planned luminosity increase at the Large Hadron Collider in the coming years has triggered interest in the use of the particles' time of arrival as additional information in specialized detectors to mitigate the impact of pile-up. The required time resolution is of the order of tens of picoseconds, with a spatial granularity of the order of 1 mm. A time measurement at this precision level will also be of interest beyond the LHC and beyond high energy particle physics. We present in this paper the first developments towards a radiation hard Depleted Monolithic Active Pixel Sensor (DMAPS), with high-resolution time measurement capability. The technology chosen is a standard high voltage CMOS process, in conjunction with a high resistivity detector material, which has already proven to efficiently detect particles in tracking applications after several hundred of Mrad of irradiation.

MALTA: a Monolithic Active Pixel Sensor for tracking in ATLAS

The MALTA team is developing the MALTA chip, a depleted monolithic active pixel sensor (DMAPS) implemented in the TowerJazz 180 nm modified CMOS process for tracking applications in high energy particle physics experiments such as the ATLAS experiment at the LHC . At the INFIERI school in Wuhan, China, I presented results on what was then the latest prototype of the chip, the MiniMALTA. So far measurements have shown promising that suggest that the chip is operational after irradiation doses comparable to those predicted for the outer pixel layers of the proposed inner tracker (ITk) upgrade in ATLAS.

Mini-MALTA: radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC

Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 μm) to minimize capacitance, a small pixel size (36.4× 36.4 μm2), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of 1×1015 1 MeV neq/cm2, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of 1×1015 1 MeV neq/cm2.

First tests of a reconfigurable depleted MAPS sensor for digital electromagnetic calorimetry

Digital Electromagnetic CALorimetry relies on a highly granular detector where the cell size is sufficiently small so that only a single particle in a shower enters each cell within a single readout cycle. The DECAL sensor, a depleted monolithic active pixel sensor (DMAPS), has been proposed as a possible technology for future digital calorimeters. A DECAL sensor prototype has been designed and fabricated in the TowerJazz 180 nm CMOS imaging process, using a high resistivity 18 μm epitaxial Si layer. The prototype has a pixel matrix of 64 × 64 pixels with a pitch of 55 × 55 μm, and is read out using fast logic at 40 MHz. It can be configured to function as either a strip sensor, for particle tracking, or a pad sensor, counting the number of pixels above threshold for digital calorimetry. Preliminary results of chip characterisation, including digital summing logic, analogue pixel performance and threshold scans under laser illumination are presented.