Dependence Of Conversion Efficiency Research Articles

On the role of target mass in extreme ultraviolet light generation from CO2-driven tin plasmas for nanolithography

Target conditioning is a crucial ingredient of high-power extreme ultraviolet (EUV) source operation in state-of-the-art nanolithography. It involves deforming tin microdroplets into tens of nanometer-thin sheets, sheets which are subsequently irradiated by intense CO2 laser radiation to form a hot, EUV-emitting plasma. Recent experiments have found that a substantial fraction of the initial droplet mass is lost in the deformation phase through fragmentation. The goal of the present study is to investigate, using radiation-hydrodynamic modeling, how variations in the sheet mass affect EUV source power and the laser-to-in-band conversion efficiency (CE). It is found that high-mass sheets can “feed” the plasma with sufficient mass to sustain the production of in-band-emitting charge states over the course of laser irradiation. Low-mass sheets, on the contrary, cannot supply enough mass to sustain this production over the pulse, thus leading to a reduction in in-band power and CE. The dependence of CE on laser energy and target thickness is quantified, and a rather weak reduction of CE with increasing laser energy for high-mass sheets is identified.

Characterization of a laser-plasma extreme-ultraviolet source using a rotating cryogenic Xe target

A laser-plasma source for extreme-ultraviolet (EUV) light that uses a rotating cryogenic solid-state Xe target has been characterized. We focused on parameters at the wavelength of 13.5 nm with 2% bandwidth required for an EUV lithography source and investigated improvements of the conversion efficiency (CE). With the drum rotating, there was an increase in CE and less fast ions compared with the case for the drum at rest. It is considered that the Xe gas on the target surface can produce optimal-scale plasma, and satellite emission lines in Xe plasma effectively increase the EUV intensity, and the ion number is decreased by the gas curtain effect. The dependence of CE on the laser wavelength, laser energy and intensity also studied. As a result, the maximum CE was 0.9% at 13.5 nm with 2% bandwidth under the optimal condition. By continuous irradiation of a Nd:YAG slab laser at a repetition rate of 320 Hz and an average power of 110 W, the target continuously generated EUV light with an average power of 1 W at 13.5 nm with 2% bandwidth. The achieved performances provide valuable information for the design of a future EUV lithography source.