Space-charge-limited current measurements have been carried out on undoped amorphous silicon-germanium alloys as a function of the Ge content in the range 0%–36%. The scaling law is checked for different series of samples with varying thickness, and the J-V data consequently analyzed by using the Weisfield method. The position of the Fermi level EF is obtained from the activation energy of the ohmic conductivity Ea. The deduced value of the density of states (DOS) near EF increases as a function of the Ge content in the range 1016 to 4×1017 cm−3 eV−1. A factor of 7 improvement of the Si0.74Ge0.26:H alloy DOS is clearly evidenced when the material is prepared using high H2 dilution of GeH4–SiH4 mixtures, leading to a DOS value of 1×1016 cm−3 eV−1.