Due to the scaling of devices, the interconnects delay is the most important concern of the current technology, becomes more significant than the IC delay, and leads to overall impact on the performance of the chip. In the present work, doped Zigzag Graphene Nano ribbons (GNR) have been analyzed for the possible nanoscale interconnect applications. The investigation has been performed using the density-functional theory-based ab-initio approach, discussed in terms of structural stability of ribbons, their electronic and transport properties, and the dynamical parameters. Zigzag GNR has been decorated with itssix possible sites along the width, through P and N type impurities, to select the most favorable site for the further analysis. The stability of the systems has been analyzed in terms of formation energy, the electronic properties in terms of band structure and density of states profiles, whereas, the transport properties in terms of transmission spectrum and I–V characteristics. The magnetic inductance, kinetic inductance, electrostatic capacitance, and quantum capacitance have also been calculated as interconnect parameters. The formation energy calculations suggest that the doping at the edge sites of NRs are more favorable. Further, it has been observed that the metallicity of the doped ZGNR enhances with doping, whereas, the I–V characteristics confirms that the N doped ZGNRs have linear current with constant slope. The performance metrics of ZGNRs have also been analyzed using HSPICE, discussed in terms of delay and power delay product, shows that the N doped ZGNRs have lower delay than the other considered counterparts, defends its application as interconnects in the electronic industry.