The oxidation property of liquid-phase sintered silicon carbide (LPS-SiC) ceramics with ZrB2 addition was studied after oxidation test in air at 1400 °C. The results indicate that the addition of ZrB2 decreased the degree of polymerization (DOP) of the silicate networks in the oxide layer, suppressing the additional oxidation caused by residual bubbles in the oxide layer of LPS-SiC, which bypassed the layer and directly corroded the material internally. After 100 h of oxidation, the additional oxidation depth was found to be 125 μm in the sample without ZrB2 and 0 μm in those containing 10 wt% ZrB2. Simultaneously, the decrease in DOP facilitates the migration of crystalline phases. The generated ZrSiO4 can migrate and aggregate at the interface between the surface oxide layer and the SiC/ZrB2 matrix, forming a continuous ZrSiO4 barrier. This impedes the diffusion of the oxidant and enhances the oxidation resistance. However, an insufficient ZrB2 content leads to a discontinuous ZrSiO4 layer, thereby weakening its protective effect. Simultaneously, a decrease in DOP increases the rate of oxygen diffusion, resulting in an increase in the oxidation layer thickness. This study contributes to a better understanding of the failure mechanisms of LPS-SiC in oxidizing environments and provide a reference for the design of oxidation-resistant LPS-SiC materials.
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