Defects In Semiconductors Research Articles

The Extraction of the Density of States of Atomic-Layer-Deposited ZnO Transistors by Analyzing Gate-Dependent Field-Effect Mobility

In this study, we investigated the density of states extraction method for atomic-deposited ZnO thin-film transistors (TFTs) by analyzing gate-dependent field-effect mobility. The atomic layer deposition (ALD) method offers ultra-thin and smooth ZnO films, but these films suffer from interface and semiconductor defects, which lead to disordered localized electronic structures. Hence, to investigate the unstable localized structure of ZnO TFTs, we tried to derive the electronic state relationship by assuming field-effect mobility can be expressed as a gate-dependent Arrhenius relation, and the activation energy in the relation is the required energy for hopping. Following this derived relationship, the DOS of the atomic-deposited ZnO transistor was extracted and found to be consistent with those using temperature-dependent measurements. Moreover, to ensure the proposed method is reliable, we applied methods for the extraction of DOSs of doped ZnO transistors, which show enhanced mobilities with shifted threshold voltages, and the results show that the extraction method is reliable. Thus, we can state that the mobility-based DOS extraction method offers practical benefits for estimating the density of states of disordered transistors using a single transfer characteristic of these devices.

Investigation of PCVSi− defect in 4H–SiC as a candidate for a qubit

Abstract Exploration of spin defects in semiconductors for possible qubits encourages the development of the quantum field. Silicon carbide (SiC) is a suitable platform to carry spin defects, due to its excellent electrical, mechanical and optical properties, together with its convenience for crystallographic growth and doping processes. In this study, a negatively charged phosphorus-vacancy (PCVSi −) defect, consisting of a silicon vacancy and nearby substitution of a phosphorus atom to a carbon atom in 4H–SiC, is investigated by first-principles calculations. This defect is demonstrated to possess a high spin (S = 1) with relatively low formation energy. Computed zero-phonon line energy and zero-field splitting parameters of this defect are close to those of neutral divacancy (VCVSi 0), negatively charged nitrogen-vacancy center (NCVSi −) and some other color centers, which indicate a similarity of both optical and spin properties among them. Moreover, the electron spin coherence time of this defect turns out to be 1.15–1.40 ms. Such a long coherence time provides the defect with reliability for quantum information processing. Our results show that the PCVSi − defect can be a promising candidate for a qubit.

Single-Shot 3D Imaging Meta-Microscope.

Three-dimensional (3D) imaging enables high-precision and high-resolution axial positioning, which is crucial for biological imaging, semiconductor defect monitoring, and other applications. Conventional implementations rely on bulky optical elements or scanning mechanisms, resulting in low speed and complicated setups. Here, we generate the double-helix (DH) point spread function with an all-dielectric metasurface and thus innovate the 3D imaging microscope (hence dubbed meta-microscope), both in 4f and 2f imaging systems. The 4f-meta-microscope with a numerical aperture of 0.7 achieves an axial localization accuracy below 0.12 μm within a 15.47 μm detection range, while the 2f-DH meta-microscope with a numerical aperture of 0.3 shows a 1.12 μm accuracy within a 227.33 μm range. We also demonstrate single-shot and accurate 3D biological imaging of the mouse kidney tissue and peach anther, providing a comprehensive and efficient approach for 3D bioimaging and other applications through a single-shot 3D meta-microscope.

Zeolite-decorated black TiOx quantum dots for photocatalytic degradation of organic cationic dyes under LED light irradiation

Defect engineering is a promising strategy to reduce the band gap of semiconductors, enhancing their photocatalytic activity under visible light by introducing intra-bandgap energy states. Among the materials studied, oxygen-deficient black TiOx stands out due to its potential in photocatalytic reduction and hydrogen evolution. However, the valence band edge maximum (VBM) of TiOx is not thermodynamically favorable for the direct oxidation of water to hydroxyl radicals (H2O/•OH). Although the formation of extensive oxygen vacancies is necessary to extend the light absorption of black TiOx to longer wavelengths, a high density of oxygen vacancies (Ov) significantly shortens the diffusion length of charge carriers within the TiOx, leading to increased recombination of electrons and holes (e-/h+), thereby suppressing photocatalytic activity. To overcome these limitations, confining TiOx particles to the quantum dot (QD) size range and constructing heterojunctions with a secondary phase can substantially improve charge carrier separation and photocatalytic performance. In addition to engineering the electronic structure of composite photocatalysts, the preaccumulation of pollutants and their subsequent degradation is an effective strategy. This method decreases the distance between the adsorbed pollutant and the active sites for reactive oxygen species (ROSs) generation, enhancing the efficiency of the photocatalytic degradation process. In this study, we confined TiOx particles to the quantum dot size range by constructing a heterojunction with H-Beta zeolite, which contains defect-induced energy states within its wide band gap. This type of zeolite is particularly effective in adsorbing cationic azo dyes, facilitating pre-accumulation and degradation. The synthesized catalysts were extensively characterized using HRTEM to determine the average size of the TiOx particles and photoluminescence (PL) analysis to investigate charge carrier separation. Our results demonstrated that while TiOx alone showed negligible degradation efficiency, and no •OH were detected, the QD TiOx/Z4 composite achieved complete oxidation of CV by •OH, as confirmed by TOC analysis. The photocatalytic degradation mechanism was proposed based on these experimental findings. These insights could be of significant interest to researchers exploring defective semiconductors for photocatalytic oxidation of organic pollutants in the liquid phase under visible light (LED) irradiation.

Quantum Spin Probe of Single Charge Dynamics.

Electronic defects in semiconductors form the basis for emerging quantum technologies, but many defect centers are difficult to access at the single-particle level. A method for probing optically inactive spin defects would reveal semiconductor physics at the atomic scale and advance the study of new quantum systems. We exploit the intrinsic correlation between the charge and spin states of defect centers to measure the charge populations and dynamics of single substitutional nitrogen spin defects in diamond. By probing their steady-state spin population, read out at the single-defect level with a nearby nitrogen vacancy center, we directly measure the defect ionization-corroborated by first-principles calculations-an effect we do not have access to with traditional coherence-based quantum sensing.

Temperature dependence of the AB lines and optical properties of the carbon–antisite-vacancy pair in 4H−SiC

Defects in semiconductors have in recent years been revealed to have interesting properties in the venture towards quantum technologies. In this regard, silicon carbide has shown great promise as a host for quantum defects. In particular, the ultrabright AB photoluminescence lines in 4H−SiC are observable at room temperature and have been proposed as a single-photon quantum emitter. These lines have previously been studied and assigned to the carbon–antisite-vacancy (CAV) pair. In this paper, we report on new measurements of the AB lines’ temperature dependence, and carry out an in-depth computational study on the optical properties of the CAV defect. We find that the CAV defect has the potential to exhibit several different zero-phonon luminescences with emissions in the near-infrared telecom band, in its neutral and positive charge states. However, our measurements show that the AB lines only consist of three nonthermally activated lines instead of the previously reported four lines; meanwhile, our calculations on the CAV defect are unable to find optical transitions in full agreement with the AB-line assignment. In light of our results, the identification of AB lines and the associated room-temperature emission require further study. Published by the American Physical Society 2024

On the Bulk Photovoltaic Effect in the Characterization of Strained Germanium Microstructures

Strain engineering serves as an effective method for optimizing electronic and optical properties in semiconductor devices, with applications including the enhancement of optical emission in Ge and GeSn‐based devices, improvement of carrier mobility, and second harmonic generation in silicon photonics structures. Current methods for deformation characterization in semiconductors, such as X‐ray diffraction and Raman spectroscopy, often require bulky and expensive setups and are limited in vertical resolution. Consequently, techniques capable of measuring lattice strain while overcoming these drawbacks are highly desirable. This study proposes a proof of concept for a cost‐effective, compact, fast, and non‐destructive approach to probe non‐uniform strain fields and additional material properties by exploiting the bulk photovoltage effect. The method is benchmarked with an array of silicon nitride stripes deposited under varying pressure conditions on a germanium substrate. Initially, their surface strains are verified through Raman spectroscopy. The deformations are replicated in a finite element method platform by integrating mechanical simulations with deformation potential theory, thereby estimating the band edge energy landscape. Finally, the study discusses the theoretical behavior of the photovoltage signal, considering semiconductor properties, defects, doping, and deformation. The findings offer insights into the development of advanced techniques for strain and transport analysis in semiconductor materials.

First-principles investigation of near-field energy transfer between localized quantum emitters in solids

We present a predictive and general approach to investigate near-field energy transfer processes between localized defects in semiconductors, which couples first-principles electronic structure calculations and a nonrelativistic quantum electrodynamics description of photons in the weak-coupling regime. The approach is general and can be readily applied to investigate broad classes of defects in solids. We apply our approach to investigate an exemplar point defect in an oxide, the F center in MgO, and we show that the energy transfer from a magnetic source, e.g., a rare-earth impurity, to the vacancy can lead to spin nonconserving long-lived excitations that are dominant processes in the near field, at distances relevant to the design of photonic devices and ultrahigh dense memories. We also define a descriptor for coherent energy transfer to predict geometrical configurations of emitters to enable long-lived excitations, that are useful to design optical memories in semiconductor and insulators. Published by the American Physical Society 2024

Passivated indium oxide thin-film transistors with high field-effect mobility (128.3 cm2 V−1 s−1) and low thermal budget (200 °C)

Here, we demonstrate a high-mobility indium oxide (In2O3) thin-film transistor (TFT) with a sputtered alumina (Al2O3) passivation layer (PVL) with a low thermal budget (200 °C). The sputtering process of the Al2O3 PVL plays a positive role in improving the field-effect mobility (µ FE) and current on/off ratio (I ON/I OFF) performance of the In2O3 TFTs. However, these enhancements are limited due to the high density of intrinsic trap defects in the In2O3 channels, as reflected in their large hysteresis and poor bias stability. Treating the In2O3 channel with oxygen (O2) plasma prior to sputtering the Al2O3 PVL results in notable improvements. Specifically, a high µ FE of 128.3 cm2V−1 s−1, a high I ON/I OFF over 106 at V DS of 0.1 V, a small hysteresis of 0.03 V, and a negligible threshold voltage shift under negative bias stress are achieved in the passivated In2O3 TFT (with O2 plasma pretreatment), representing a significant improvement compared to the passivated In2O3 TFT (without O2 plasma pretreatment) and the unpassivated In2O3 TFT. The remarkable reduction of intrinsic trap defects in the passivated In2O3 TFT compensated by O2 plasma is the primary mechanism underlying the improvement in µ FE and bias stability, as validated by x-ray photoelectron spectra, hysteresis analysis, and temperature-stress electrical characterizations. Plasma treatment effectively compensates for intrinsic trap defects in oxide semiconductor (OS) channels, when combined with sputter passivation, resulting in a significant enhancement of the overall performance of OS TFTs under low thermal budgets. This approach offers valuable insights into advancing OS TFTs with satisfactory driving capability and wide applicability.

(Invited) Tackling Interface Challenges for Shallow Diamond Color Centers

Spin defects in wide-bandgap semiconductors, such as color centers in diamond, can be highly sensitive to local (nanoscale) changes in magnetic field, temperature, and strain. These solid-state quantum sensors have certain advantages over their atomic counterparts owing to their room-temperature operation without the need for vacuum components and the relative ease of photonic- and RF-component integration. However, near-surface quantum defects exhibit spin decoherence and most of the light emitted is trapped within the bulk crystal due total internal reflection at the interface. In this presentation, I will summarize our recent work towards better understanding and addressing these interface challenges, including the modeling and experimental characterization of radiative emission of near-surface emitters, design of nanophotonic components to improve light extraction, and surface analysis and chemical termination techniques aimed at improving spin coherence of emitters.

(Invited) Advanced Electronic Characterization of Wide Band Gap Semiconductor Defects at the Nanoscale

Wide bandgap materials such as gallium nitride (GaN) and gallium oxide (Ga2O3) are currently under development for realizing next-generation high power electronic devices beyond silicon. Vertical structures produced through homoepitaxial growth are preferred for scaling high-voltage devices, which places strict demands on the quality of bulk substrates. In particular, extended defects can propagate during epitaxial growth into the active areas of devices. Therefore, there is a need for identifying defects and determining their electronic properties at relevant nano- to micro- scale dimensions in order to disentangle their combined effects on macroscopic devices. Here, we use a combination of laser-based photoemission electron microscopy (PEEM) and electrical atomic force microscopy (AFM) methodologies to investigate the local electronic properties of surface defects in epitaxially grown GaN and β-Ga2O3. PEEM is a non-scanning electron microscopy technique where photoelectrons emitted by a surface illuminated by deep-ultraviolet light are imaged with nanometer-scale spatial resolution. The emitted photoelectrons are sensitive to the local electronic structure, making PEEM a powerful tool for evaluating electronic changes at length scales relevant for devices, and provides valuable information for identifying “killer” defects which must be minimized during device growth and processing.The difficulty in producing large, low dislocation density bulk GaN substrates has led to longstanding issues with leakage current in diodes and transistor devices. We identify surface defects with different electronic properties in GaN epitaxy on different substrates using PEEM. We observe star-shaped defects on strain-patterned GaN substrates and elongated dark patches on growth ridges on ammonothermally grown GaN substrates. In both cases, the observed electronic changes in PEEM correlate directly with local electrical AFM measurements, revealing that local changes in the electronic structure at these defects results in altered electrical conduction.In contrast, the development of large bulk Ga2O3 substrates has been more successful, yet the identification and influence of various defects on device performance is still largely unknown at this point. The topography of β-Ga2O3 epitaxy varies widely between growth methods and substrate orientations. For example, β-Ga2O3 by hydride vapor physical epitaxy lacks fine structure, yet has surface defects that regularly appear in parallel orientations. In β-Ga2O3 grown on different substrate orientations, we observe variations in the surface electronic properties using PEEM. For certain substrate orientations and growths, we find nanoscale variations in doping, while other orientations display micron-scale electronic inhomogeneity and defects. Our results demonstrate that laser-based PEEM can be a powerful tool for detecting electrically active defects, as well as evaluating the nanoscale electronic homogeneity of wide bandgap semiconductors.

Native Defects Hybridization and Electronic Transport in Cu2Se‐CuGaSe2 Hierarchical Composites

AbstractEngineering the energy distribution of electronic defects in semiconductors can afford the coexistence of degenerate and nondegenerate transport behavior. By leveraging native defects in Cu2Se and CuGaSe2 phases, the tunability of the concentration and energy distribution of active electronic defects in hierarchical (1‐x)Cu2Se‐(x)CuGaSe2 composites is demonstrated. This study found that the electrical conductivity of various composites decreases with rising temperature indicating degenerate semiconducting behavior, whereas the carrier density increases with temperature, which is consistent with non‐degenerate semiconductivity. Remarkably, this study found that while the carrier density and electrical conductivity drop with the increasing CuGaSe2 content for samples with x ≤ 0.45 is consistent with an increase in the activation energy of “active” electronic defects, the sudden increase by 140% in the electrical conductivity and by 109% in the carrier density for near equimolar composition suggests the formation of a large density of electronic defects with lower activation energy. This unusual behavior is understood within the context of the hybridization of coexisting native electronic defects to form degenerate hybrid acceptor states with lower activation energy. The reported unique electronic transport can be leveraged for the development of more versatile electronic and optoelectronic devices with superior performance.

Study on the passivation properties of austenitic stainless steel 316LN based on the point defect model

The Point Defect Model was successfully developed to study the passivation of 316LN. Steel's passive film exhibits n-type semi-conductivity with interstitial cations as the dominant point defect. The transfer coefficients αi and rate constants ki are independent of the applied potential but vary with temperature. The electronic structure of the barrier layer (bl) is discussed as a degenerate defect semiconductor in which the bl comprises essentially the depletion zone with the electronic charge and the electron-hole charge being concentrated at the metal/bl and the bl/solution interfaces, respectively. The closest classical analog is postulated to be a tunnel diode.

Wavelength‐Selective Photodetector and Neuromorphic Visual Sensor Utilizing Intrinsic Defect Semiconductor

AbstractWith the rapid developments of Artificial Intelligence (AI) and the Internet of Things (IoT), increasingly intricate and expanding application scenarios are placing higher demands on current machine vision capabilities. Therefore, there is a pressing need to simultaneously achieve diverse functionalities, simple designs, and efficient computing in vision devices. Here, the study develops a two‐terminal optoelectronic device utilizing a single 2D intrinsic defect semiconductor In2S3. The device demonstrates wavelength‐selective photodetection and neuromorphic visual capabilities, attributed to defect‐related charge‐trapping/de‐trapping processes. As a photodetector, the device exhibits a high photoresponsivity of 473.6 A W−1, a high external quantum efficiency of 1.6 × 105%, and a fast rise/fall time of 0.3/1.4 ms at the wavelength of 359 nm. As an all‐in‐one neuromorphic visual device, optoelectronic‐driven fundamental synaptic functions, including paired‐pulse facilitation (PPF), short‐term plasticity (STP), long‐term plasticity (LTP), and “learning‐experience”, are successfully mimicked at the wavelength of 671 nm. Moreover, one‐shot recognition of the 12‐letter image “SHAN XI NORMAL” is achieved through an artificial convolutional neural network. This study provides a new strategy for developing compact high‐level intelligence systems for complex application scenarios.

“Frozen” π-π stacking on perylene diimide molecules induces oxygen vacancies synergistic activation of persulfate towards degradation of tetracycline

Oxygen vacancy-rich self-assembled perylene diimide (OV-SA-PDI) supramolecules were prepared via freeze-drying, which froze the molecular backbone by retaining π-π stacking to induce additional OVs. The OVs content on OV-SA-PDI (1.956 × 1013 spins·mm−3) was 1.9 times that of SA-PDI (1.029 × 1013 spins·mm−3) with vacuum drying. The photocatalytic performance of OV-SA-PDI was demonstrated to be excellent in activating persulfate (PS) to degrade tetracycline (TC), achieving a remarkable degradation efficiency of 94.6% in 60 min under visible light (Vis). Mechanistic studies revealed a synergistic interaction among OV-SA-PDI, PS, and Vis to produce an abundance of active species. Vis activated a small portion of PS to produce ∙OH and SO4∙−, whereas the photogenerated electrons generated by OV-SA-PDI directly cleaved the O-O bond to produce abundant SO4∙−. Furthermore, the OVs acted as an electron trap to promote carrier separation and produced 10.0 μM 1O2 within 12 min. The active species were determined to decompose TC into low-toxicity products with lower molecular weights (m/z = 352, 340, and 227). This study presented a novel approach to the introduction of OVs into organic semiconductors and offered a mechanistic analysis of the synergistic relationship between defective organic semiconductors and sulfate radical-based advanced oxidation processes for wastewater treatment.

Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis).

High-spin defects (color centers) in wide-gap semiconductors are considered as a basis for the implementation of quantum technologies due to the unique combination of their spin, optical, charge, and coherent properties. A silicon carbide (SiC) crystal can act as a matrix for a wide variety of optically active vacancy-type defects, which manifest themselves as single-photon sources or spin qubits. Among the defects, the nitrogen-vacancy centers (NV) are of particular importance. This paper is devoted to the application of the photoinduced electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) techniques at a high-frequency range (94 GHz) to obtain unique information about the nature and properties of NV defects in SiC crystal of the hexagonal 4H and 6H polytypes. Selective excitation by microwave and radio frequency pulses makes it possible to determine the microscopic structure of the color center, the zero-field splitting constant (D = 1.2-1.3 GHz), the phase coherence time (T2), and the values of hyperfine (≈1.1 MHz) and quadrupole (Cq ≈ 2.45 MHz) interactions and to define the isotropic (a = -1.2 MHz) and anisotropic (b = 10-20 kHz) contributions of the electron-nuclear interaction. The obtained data are essential for the implementation of the NV defects in SiC as quantum registers, enabling the optical initialization of the electron spin to establish spin-photon interfaces. Moreover, the combination of optical, microwave, and radio frequency resonant effects on spin centers within a SiC crystal shows the potential for employing pulse EPR and ENDOR sequences to implement protocols for quantum computing algorithms and gates.

Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature

A common solution for precise magnetic field sensing is to employ spin-active defects in semiconductors, with the NV center in diamond as a prominent example. However, the three-dimensional nature of diamond limits the obtainable proximity of the defect to the sample. Two-dimensional boron nitride, which can host spin-active defects, can be used to overcome those limitations. In this work, we study spin properties of sp2-bonded boron nitride layers grown using Metal Organic Chemical Vapor Deposition at temperatures ranging from 700 °C to 1200 °C. With Electron Spin Resonance (ESR) we show that our layers exhibit spin properties, which we ascribe to carbon related defects. Supported by photoluminescence and Fourier-transform infrared spectroscopy, we distinguish three different regimes: (i) growth at low temperatures with no ESR signal, (ii) growth at intermediate temperatures with a strong ESR signal and a large number of spin defects, (iii) growth at high temperatures with a weaker ESR signal and a lower number of spin defects. The observed effects can be further enhanced by an additional annealing step. Our studies demonstrate wafer-scale boron nitride that intrinsically hosts spin defects without any ion or neutron irradiation, which may be employed in spin memories or magnetic field detectors.

Construction of BiOCl/reduced graphene oxide nanocomposites heterojunction with abundant oxygen vacancies for efficient photocatalytic organic pollutant removal

Precisely manipulating defects in semiconductor is an effective way to improve their photocatalytic activity. In this work, bismuth oxychloride (BiOCl)/reduced graphene oxide (RGO) nanocomposites with abundant oxygen vacancies (OVs) are successfully constructed by a facile solvothermal method. BiOCl nanosheets are uniformly distributed on the RGO with superior conductivity. The RGO served as a pivotal charge transmission bridge substantially accelerates the transfer of photogenerated charge carriers, resulting in the improvement of the charge separation efficiency. The abundant oxygen vacancies in BiOCl/RGO nanocomposites increase light harvesting and enhance the adsorption of O2 to promote the formation of superoxide free radicals (·O2−). By virtue of these merits, the unique BiOCl/RGO nanocomposite shows excellent degradation efficiency. When the mass ratio of RGO was 2 %, 99.07 % of 20 mg/L(100 mL) methyl orange (MO) was removed after 80 min, which was much higher than that of pure BiOCl.

Perspective on electrically active defects in β-Ga2O3 from deep-level transient spectroscopy and first-principles calculations

The ultra-wide bandgap of gallium oxide provides a rich plethora of electrically active defects. Understanding and controlling such defects is of crucial importance in mature device processing. Deep-level transient spectroscopy is one of the most sensitive techniques for measuring electrically active defects in semiconductors and, hence, a key technique for progress toward gallium oxide-based components, including Schottky barrier diodes and field-effect transistors. However, deep-level transient spectroscopy does not provide chemical or configurational information about the defect signature and must, therefore, be combined with other experimental techniques or theoretical modeling to gain a deeper understanding of the defect physics. Here, we discuss the current status regarding the identification of electrically active defects in beta-phase gallium oxide, as observed by deep-level transient spectroscopy and supported by first-principles defect calculations based on the density functional theory. We also discuss the coordinated use of the experiment and theory as a powerful approach for studying electrically active defects and highlight some of the interesting but challenging issues related to the characterization and control of defects in this fascinating material.

Sensing spin wave excitations by spin defects in few-layer-thick hexagonal boron nitride.

Optically active spin defects in wide bandgap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of "hard" and "soft" condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y3Fe5O12 (YIG) by boron vacancy [Formula: see text] spin defects contained in few-layer-thick hexagonal boron nitride nanoflakes. We show that the ferromagnetic resonance and parametric spin excitations can be effectively detected by [Formula: see text] spin defects under various experimental conditions through optically detected magnetic resonance measurements. The off-resonant dipole interaction between YIG magnons and [Formula: see text] spin defects is mediated by multi-magnon scattering processes, which may find relevant applications in a range of emerging quantum sensing, computing, and metrology technologies. Our results also highlight the opportunities offered by quantum spin defects in layered two-dimensional vdW materials for investigating local spin dynamic behaviors in magnetic solid-state matters.