Defect Emission Research Articles

Optimizing excited state adsorption and carrier dynamics of metal doped zinc oxide by p-d orbital modulation for efficient reverse saturation absorption

Doping metals can regulate the excited state adsorption and carrier transport efficiency of ZnO through p-d orbital coupling thereby improving its nonlinear performance. Herein, the thin film coatings consisting of ZnO, and M-ZnO (M=Al, Sn, Mg) were synthesized using the magnetron sputtering technique. ZnO exhibited the granular/stick structure, while the metal dopant atoms (M) were incorporated into the ZnO lattice, resulting in a homogeneous distribution. Photoluminescence spectroscopy reveals the quenched defect emission intensity, indicating a decrease in the rate of photo-induced electron-hole pair complexation. Mg exhibits an optimized effect to promote the saturation absorption of ZnO, resulting in the enhancement of the nonlinear absorption (NLA) coefficients for M-ZnO films. Al-ZnO and Sn-ZnO films exhibit reverse saturation absorption. Theoretical simulation shows that the additions of transition metal atoms favor the electron transfer through p-d orbital modulation of ZnO. The p-d hybridization causes the metal-d orbitals to cross the Fermi level and form an electron transport channel, thereby enhancing the excited state absorption, and effectively controlling the NLA process and mechanism. The excited state absorption of the M-ZnO films significantly rises. This research demonstrates that the optimization of excited state absorption through p-d orbital modulation is a highly effective strategy for the development of efficient and superior nonlinear optical absorbers.

Optical properties of SiO2 opal crystals decorated with silver nanoparticles

SiO2 opal crystals decorated with silver nanoparticles (AgNPs) have been successfully fabricated. SEM analysis revealed that the SiO2 opals have an ordered region of 25–30 μm2, and AgNPs are located into the gaps between the SiO2 nanospheres. The effect of the plasmons of AgNPs on the photoluminescence of SiO2 opal crystals were investigated. Under excitation of a 325 nm laser, we observed the quenching of the intrinsic defect emission in SiO2 as the concentration of AgNPs increased. The cause of the observed photoluminescence behavior is attributed to the interaction between surface plasmon induced by AgNPs and photoluminescence centers in SiO2 opal crystals. Then, we utilized SiO2 opals crystals decorated with AgNPs as a SERS substrate. The final enhancement factor of the Raman shift was 1.64 × 107, enabling the trace detection limit for a case of malachite green to be as low as 0.05 ppm, with a relative standard deviation of less than 1.75 %. This outcome suggests the potential for direct application of the prepared substrates in ultra-fast chemical analysis.

Investigation of structural, optical, and electrical characterization of nanostructured Bi30Sb10Se60-based photodetector applications

This study thoroughly investigates the optical absorption properties of Bi30Sb10Se60 thin films, focusing on their applicability in photo-sensing technologies. By employing a range of spectrophotometric techniques, including transmission and reflection analyses, the research identifies a direct energy gap of 1.68 eV, along with dispersion and oscillator energies of 14.36 eV and 3.42 eV, respectively. These parameters reveal the material's interaction capabilities with light. The study highlights the heterojunction's pronounced photosensitivity, especially at lower reverse biases, indicating its promise for photo-sensing applications. Photoluminescence (PL) spectra show broad defect emission bands with peaks at 475 nm, 487 nm, 510 nm, and 525 nm, which provide insights into recombination processes. Additionally, Energy Dispersive Spectroscopy (EDS) confirms the films' near-stoichiometric composition, while Thermal Gravimetric Analysis (TGA) demonstrates the high thermal stability of the films. The findings include high responsivity and detectivity of the photodetector, though the linear dynamic range (LDR) and signal-to-noise ratio (SNR) are comparatively lower. Overall, the research advances the understanding of Bi30Sb10Se60 thin films, paving the way for their use in optimized photoresponsive devices within optoelectronic technologies.

Characterization Study of Deep-Level Defect Spatial Distribution, Emission Mechanisms, and Structural Identification

Abstract The characterization of defects in semiconductor materials and devices is crucial for enhancing the performance and reliability of semiconductor products. This tutorial review focuses on Deep Level Transient Spectroscopy (DLTS) as the primary analytical tool, thoroughly discussing its distinct advantages in deep-level defect characterization. However, it is unable to reveal the concentration-depth distribution of deep-level defects, neglects the dependency of carrier emission rates on the electric field, and fails to accurately identify defect structures.
To overcome these limitations, two enhanced DLTS techniques have been developed to extend the capabilities of DLTS. These enhancements include the utilization of graded fill pulse technology to accurately map defect distributions at various depths within devices, facilitating individual defect characterization across different layers of multilayered structures; the application of varying electric field strengths to samples to delve into the intricate physical mechanisms of defects during carrier emission processes; and the adjustment of the duration of electric pulse injection to monitor signal growth trends, deducing the microstructure of defects. The paper integrates research findings from a wide array of field experts, meticulously outlines a description of how to obtain the depth distribution of defect concentration in devices, furnishes quantitative criteria for both the Poole-Frenkel effect and phonon-assisted tunneling mechanisms of carrier emission, and provides specific examples for distinguishing between interface states/bulk defects and point defects/extended defects. This enhances both the theoretical and practical knowledge in this field. The advanced DLTS techniques outlined provide crucial guidance for defect characterization and performance optimization in semiconductor devices with new structures and materials.

On analysis of structural and optical absorption characterization of Bi35Sb5Se60 nanostructured thin films for photosensing application

In this extensive study, the primary focus is directed towards the intricate exploration of the optical absorption characteristics inherent in nanostructured Bi35Sb5Se60 thin films, prepared by thermal evaporation under a vacuum of 10−5 Torr, ensuring high purity and uniformity for optoelectronic applications. With a particular emphasis on their prospective application in photosensing devices. The research employs a comprehensive approach, integrating various spectrophotometric measurements that encompass both transmission and reflection analyses. The meticulous examination of the absorption edge characteristics reveals a direct energy gap of 1.82 eV, providing a foundational understanding of the material's electronic structure. The determination of the dispersion energy at 6.35 eV and the oscillator energy at 2.96 eV further enriches the understanding of the material's optical behavior, shedding light on its capacity to interact with incident light. A noteworthy highlight emerges with the identification of high photosensitivity exhibited by the heterojunction, particularly under lower reverse bias conditions, underscoring its potential utility in photosensing applications. The PL spectra reveal a highly broadened defect emission band with peaks at 475 nm, 490 nm, and 540 nm, providing insights into the recombination processes within the material. The identification of emission peaks related to the conduction band edge and acceptor levels further enhances the comprehension of the material's optical and electronic characteristics. underscores the potential of these nanostructured thin films for efficient photosensing devices. The findings presented in this research not only advance the understanding of the material's properties but also lay a robust foundation for further research and development in the design and optimization of photoresponsive devices within the realm of optoelectronic technologies.

A novel white Y2(Ti0.8Hf0.2)2O7: Eu phosphors regulated by HfO2 exhibiting low color shifting for high temperature

The development of white phosphors that can be activated in near-ultraviolet light is highly important in the field of LED lighting. In this work, a series of color-tunable Y2(Ti1-xHfx)2O7:Eu phosphors were prepared by adjusting the HfO2 and Eu3+ concentrations. In particular, white Y2(Ti0.8Hf0.2)2O7:Eu phosphors were successfully synthesized and emitted a broad band covering the entire visible light region upon excitation with 340 nm UV light. The white banded materials were composed of Eu2+ and Eu3+ emissions and HfO2 defect emission. The formation of Eu2+ ions was caused by the introduction of HfO2, which causes self-reduction of Eu3+ ions but does not require additional reducing agents. The white Y2(Ti0.8Hf0.2)2O7:Eu phosphors exhibit low color shifting at high temperature, which is very important for LED applications. The chromaticity shift of the Y2(Ti0.8Hf0.2)2O7:0.2Eu phosphor is 2.83 × 10−2 at 503 K, which is only 54.8 % that of commercial three-color white phosphors at the same temperature. The Ra value did not decrease significantly with increasing temperature and reached 90.2 at 383 K. Y2 (Ti0.8Hf0.2)2O7:0.2Eu phosphors were assembled with a 365 nm LED chip to fabricate a WLED device that showed excellent white-colored coordinates (0.345, 0.358) and a high Ra value of 90.1 under a 300 mA current.

Large-Scale Statistical Analysis of Defect Emission in hBN: Revealing Spectral Families and Influence of Flake Morphology.

Quantum emitters in two-dimensional layered hexagonal boron nitride are quickly emerging as a highly promising platform for next-generation quantum technologies. However, the precise identification and control of defects are key parameters to achieve the next step in their development. We conducted a comprehensive study by analyzing over 10,000 photoluminescence emission lines from liquid exfoliated hBN nanoflake samples, revealing 11 narrow sets of defect families within the 1.6 to 2.2 eV energy range. This challenges hypotheses of a random energy distribution. We also reported averaged defect parameters, including emission line widths, spatial density, phonon side bands, and Franck-Condon-related factors. These findings provide valuable insights into deciphering the microscopic origin of emitters in hBN hosts. We also explored the influence of the hBN host morphology on defect family formation, demonstrating its crucial impact. By tuning the flake size and arrangement, we achieve selective control of defect types while maintaining high spatial density. This offers a scalable approach to defect emission control, diverging from costly engineering methods. It emphasizes the significance of the morphological aspects of hBN hosts for gaining insights into defect origins and expanding their spectral control.

Synthesis and characterizations of zinc oxide nanorods by cost effective aqueous hydrothermal technique for solid state lighting applications

Zinc oxide (ZnO) is recognized as the most promising and often utilized semiconducting material due to its exceptional physical, chemical, optical, and relatively low-cost production features, as well as its ecologically beneficial nature. ZnO is a prominent candidate owing to its wide band gap (3.37 eV at room temperature) as well as its high exciton binding energy (60 meV) for the next generation of ultraviolet and blue optoelectronic devices. This would be achieved through the development of hybrid heterostructured LED devices with low manufacturing costs by blending gallium nitride (GaN) with zinc oxide (ZnO), which serves as the most efficient opto-electronic device. Due to its high electron mobility, high transparency in the visible wavelength spectrum, and low work function, ZnO is also a highly investigated transparent conducting oxide thin film for several applications. Besides, their incredible optical capabilities, ZnO-based optical devices, such as light-emitting diodes (LEDs) and laser diodes (LDs), have drawn a great deal of interest. This reported research work demonstrates the growth of high-density, high-aspect-ratio ZnO nanorod (NR) arrays on p-type gallium nitride substrates employing low-cost facial aqueous hydrothermal syntheses with optimised growing conditions. Additionally, a top-down chemical etching technique is adapted for fabricating zinc oxide nanotubes. High-quality ZnO nanorods with high intensity that were a few microns long were found across the GaN substrate with FESEM analysis. The chemical composition of the grown nanorods is confirmed with EDAX analysis. The wurtzite crystalline structure and c-axis orientation of the grown ZnO NR-arrays were identified in X-ray diffraction studies. A Schimadzu UV–Vis–NIR spectrophotometer was used to record the optical curve, and the energy gap was determined to be 3.24 eV by plotting the Tauc curve. The good optical quality of the harvested nanorods is ensured by the narrow near-band-edge (NBE) emission at 384 nm and defect emission peaks detected through photoluminescence analyses. Grown specimens are also subjected to Raman spectrum analyses, and the obtained results are presented.

Simulation and interpretation of zinc and nitrogen dopants induced defect emissions in monoclinic gallium oxide

Zinc (Zn) and nitrogen (N) are potential acceptor dopants for inducing visible emissions and p-type conductivity in monoclinic gallium oxide (β-Ga2O3), however, the poor understanding of these dopants and their recombination process severely limited the optoelectronic applications. Here, we investigate the zinc (Zn) and nitrogen (N) dopants-induced intraband states and the broadening of defect emission bands due to vibronic coupling of highly transparent β-Ga2O3 films through chemical and optical analyses, as well as density function theory. Incorporating Zn and N in β-Ga2O3 shifts the valence band edge towards the Fermi level and introduces band tail states above the valence band maximum. The emission band from pure β-Ga2O3 becomes significantly broad with the incorporation of Zn and N resulting in two additional emission bands: green luminescence (GL) and red luminescence (RL) along with the characteristic ultraviolet luminescence (UVL) and blue luminescence (BL) of pristine β-Ga2O3. Furthermore, the defect states responsible for these UVL, BL, GL, and RL emissions and their phonon coupling strengths are estimated by simulating the spectral line shape of these emission bands using the configuration coordinate model. The simulation results indicate that the Zn and N dopants-induced intraband states are responsible for the GL, and RL bands. These intraband states are acceptors, which provide p-type conductivity in β-Ga2O3 film.

Optically Active Defect Engineering via Plasma Treatment in a MIS‐Type 2D Heterostructure

AbstractAt the interface of 2D heterostructures, the presence of defects and their manipulation play a crucial role in the interfacial charge transfer behavior, further influencing the device functionality and performance. In this study, the impact of deliberately introduced photo‐active defects in the h‐BN layer on the interfacial charge transfer and photoresponse performance of a metal‐insulator‐semiconductor type heterostructure device is explored. The formation and concentration of defects are qualitatively controlled using an inductive coupled plasma treatment method, as evidenced by enhanced h‐BN defect emission and more efficient optically induced doping of graphene at the graphene/h‐BN interface. Besides, the use of the h‐BN layer between graphene and WS2 not only suppresses charge carriers in the dark state, but also promotes the separation of photo‐generated electron‐hole pairs and interfacial charge transfer due to the existence of defect levels, leading to orders of magnitude improvement in the light on/off ratio and self‐driving performance of the heterostructure photodetector. This strategy of controlling defect states in the insulating layer provides a new approach to optimize the charge transfer processes at the 2D interfaces, so as to expand its potential applications in the fields of electronic and optoelectronic devices.

Amplified spontaneous emission in β-In2S3–Ag based SQD-MNP superstructures with switching photoluminescence and enhanced photocatalytic activity

Optically modified MNPs coupled with SQDs (super structures) demonstrating tunable emission and enhanced photocatalytic activity are synthesized through homogeneous nucleation of indium chloride, thioacetamide and silver nitrate. Ag nanospheres (1–15 nm) are embedded in the matrix of β-In2S3 quantum dots. Modification of the absorption profile and shift in excitonic binding energy from 3.60 eV to 3.25 eV occurs due to plasmon mediated indirect columbic interaction between the SQDs. Raman spectrum of β-In2S3 (1:1)-Ag Nanohybrids (NHs) shows asymmetric line-shape broadening due to the fano-interaction (electron-phonon interaction) of the triply degenerate F2g mode of SQDs with a continuum of plasmon excitations. The emission spectra of the quantum dots, with significant peak shifting and enhanced intensity, indicates stronger coupling between the SQDs and MNPs. In the proximity of Ag NPs, the defect emission due to IIn (∼708 nm) is completely quenched, and an enhanced blue emission occurs at ∼ 496 nm. Further with increase in pump beam energy, there is a gradual peak maxima shift, spectral distortion, narrowing of emission profile and enhancement in emission intensity, which is attributed to amplified spontaneous emission assisted amplification in the gain media (SQDs). Measurement of photocatalytic efficiency for irradiation of 60 min (400 nm–700 nm) with β-In2S3 (1:1) QDs-Ag NHs as photocatalyst, prompted 100 % degradation while pure β-In2S3 (1:1) QDs as photocatalyst material could attain 98.6 % degradation only after 280 min of irradiation.

Probing Correlation of Optical Emission and Defect Sites in Hexagonal Boron Nitride by High-Resolution STEM-EELS.

Optically bright emitters in hexagonal boron nitride (hBN) often acting as a source of a single-photon are mostly attributed to point-defect centers, featuring localized intra-bandgap electronic states. Although vacancies, anti-sites, and impurities have been proposed as candidates, the exact physical and chemical nature of most hBN single-photon emitters (SPEs) within the visible region are still up for debate. Combining site-specific high-angle annular dark-field imaging (HAADF) with electron energy loss spectroscopy (EELS), we resolve and identify a few carbon substitutions among neighboring hBN hexagons, all within the same sample region, from which typical defect emission is observed. Our experimental results are further supported by first-principles calculations, through which the stability and possible optical transitions of the proposed carbon-defect complex are assessed. The presented correlation between optical emission and defects provides valuable information toward the controlled creation of emitters in hBN, highlighting carbon complexes as another probable cause of its visible SPEs.

Reaction-dependent optical behavior and theoretical perspectives of colloidal ZnSe quantum dots

Colloidal quantum dots (QDs) are attracting research interest because of their unique optical properties that result from the quantum confinement effect. ZnSe QDs, which are II–VI semiconductors, offer a wide direct bandgap (2.7 eV), making them promising for applications such as light-emitting diodes, photodetectors, and biomedical labeling. In the present work, colloidal ZnSe (QDs) were synthesized by the hot-injection method with a Zn:Se ratio of 1:1. The optical properties of ZnSe QDs obtained at different reaction times were investigated by spectrophotometric UV–vis absorption and emission measurements. The as-synthesized ZnSe QDs exhibit blue excitonic emission, and no defect emission was detected. Transmission electron micrographs indicated that the QDs have a spherical morphology with dimensions ranging from 3.69 to 4.53 nm. In particular, the Brus model was applied to demonstrate a correlation between the QD sizes and the optical bandgaps obtained from Tauc plots.

Formation and stability of point defect color centers in 6H silicon carbide

Point defect color centers acting as single-photon emitters are promising for quantum technology applications and have been extensively studied, e.g., in the 4H polytype of silicon carbide (SiC). However, the physics of such color centers in other SiC polytypes is much less explored. Herein, we study the formation and thermal stability of such color centers in 6H-SiC using photoluminescence spectroscopy. The emissions from typical single-photon emitters, such as silicon vacancies, divacancies, and carbon antisite-vacancy pairs in 6H-SiC, were monitored as a function of the proton irradiation fluence and post-irradiation annealing, and compared to that in 4H-SiC. Overall, at the background of similarities between the emission behavior in 4H- and 6H-SiC polytypes, we observed prominent differences; e.g., for the thermal stability of the carbon antisite-vacancy pair, which exhibited maximized emissions upon 300 and 900 °C anneals in 4H- and 6H-SiC, respectively. Moreover, we observed a range of defect emission signatures not previously reported for 6H-SiC in the literature and discussed their potential origin in the context of the thermal stability. For example, among the PL-lines in 6H-SiC, we detected periodically repeatable emission signatures, resembling the so-called L-lines recently reported in 4H-SiC, even though their exact origin has not yet been settled in the literature. Thus, we use color centers comparison in different polytypes to better understand the nature of the single-photon emitters in SiC.

Investigation of Sub-Bandgap Emission and Unexpected n-Type Behavior in Undoped Polycrystalline CdSexTe1-x.

Se alloying has enabled significantly higher carrier lifetimes and photocurrents in CdTe solar cells, but these benefits can be highly dependent on CdSexTe1-x processing. This work evaluates the optoelectronic, chemical, and electronic properties of thick (3µm) undoped CdSexTe1-x of uniform composition and varied processing conditions (CdSexTe1-x evaporation rate, CdCl2 anneal, Se content) chosen to reflect various standard device processing conditions. Sub-bandgap defect emission is observed, which increased as Se content increased and with "GrV-optimized CdCl2" (i.e., CdCl2 anneal conditions used for group-V-doped devices). Low carrier lifetime is found for GrV-optimized CdCl2, slow CdSexTe1-x deposition, and low-Se films. Interestingly, all films (including CdTe control) exhibited n-type behavior, where electron density increased with Se up to an estimated ≈1017cm-3. This behavior appears to originate during the CdCl2 anneal, possibly from Se diffusion leading to anion vacancy (e.g., VSe, VTe) and ClTe generation.

Versatile luminescence thermometry via intense green defect emission from an infrared-pumped fluorosilicate optical fiber

An all-glass optical fiber capable of two distinct methods of optical thermometry is described. Specifically, a silica-clad, barium fluorosilicate glass core fiber, when pumped in the infrared, exhibits visibly intense green defect luminescence whose intensity and upper-state lifetime are strong functions of temperature. Intensity-based optical thermometry over the range from 25°C to 130°C is demonstrated, while a lifetime-based temperature sensitivity is shown from 25°C to 100°C. Time-domain measurements yield a relative sensitivity of 2.85%K−1 at 373 K (100°C). A proof-of-concept distributed sensor system using a commercial digital single-lens reflex camera is presented, resulting in a measured maximum relative sensitivity of 1.13%K−1 at 368 K (95°C). The sensing system described herein stands as a new blueprint for defect-based luminescence thermometry that takes advantage of pre-existing and relatively inexpensive optical components, and allows for the use of standard cameras or simply direct human observation.

Defect Engineering and Emission Tuning of Wide-Bandgap MAPbCl3 Perovskite.

Lead-chloride perovskites are promising candidates for optoelectronic applications, such as visible-blind UV photodetection. It remains unclear how the deep defects in this wide-bandgap material impact the carrier recombination dynamics. In this work, we study the defect properties of MAPbCl3 (MA = CH3NH3) based on photoluminescence (PL) measurements. Our investigations show that apart from the intrinsic emission, four sub-bandgap emissions emerge, which are very likely to originate from the radiative recombination of excitons bound to several intrinsic vacancy and interstitial defects. The intensity of various emission features can be tuned by adjusting the type and ratio of precursors used during synthesis. Our study not only provides important insights into the defect property and carrier recombination mechanism in this class of material but also demonstrates efficient strategies for defect passivation and engineering, paving the way for further development of lead-chloride perovskite-based optoelectronic devices.

Quantum Defect Sensitization via Phase-Changing Supercharged Antibody Fragments.

Quantum defects in single-walled carbon nanotubes promote exciton localization, which enables potential applications in biodevices and quantum light sources. However, the effects of local electric fields on the emissive energy states of quantum defects and how they can be controlled are unexplored. Here, we investigate quantum defect sensitization by engineering an intrinsically disordered protein to undergo a phase change at a quantum defect site. We designed a supercharged single-chain antibody fragment (scFv) to enable a full ligand-induced folding transition from an intrinsically disordered state to a compact folded state in the presence of a cytokine. The supercharged scFv was conjugated to a quantum defect to induce a substantial local electric change upon ligand binding. Employing the detection of a proinflammatory biomarker, interleukin-6, as a representative model system, supercharged scFv-coupled quantum defects exhibited robust fluorescence wavelength shifts concomitant with the protein folding transition. Quantum chemical simulations suggest that the quantum defects amplify the optical response to the localization of charges produced upon the antigen-induced folding of the proteins, which is difficult to achieve in unmodified nanotubes. These findings portend new approaches to modulate quantum defect emission for biomarker sensing and protein biophysics and to engineer proteins to modulate binding signal transduction.

Moisture‐Resistant Orange Emitters with Near‐Unity Quantum Yield from Mn2+ Alloyed Vacancy‐Ordered Quadruple Perovskites

AbstractMn2+‐doped metal halide perovskites present remarkable optical properties in optoelectronic applications, although the realization of high efficiency and stability is still a challenge. In this work, a series of highly efficient and stable orange‐emitting Mn2+ alloyed Cs4Cd1‐xMnxBi2Cl12 single crystals are successfully synthesized via a hydrothermal reaction. Combined with the crystal structure and spectral characterization at 7 K, the site occupation of Mn2+ and defect emission are systematically discussed. Benefiting from the effective [BiCl6]3−→[MnCl6]4− energy transfer and lattice distortion, these single crystals exhibit a maximum internal and external quantum yield of ≈97% and ≈65% at 35% heavy doping level. Interestingly, these Mn2+‐alloyed single crystals exhibit remarkably waterproof stability, no decrease in emission intensity is observed after immersion in deionized water for 4 h. After soaking in deionized water for 100 days, the internal quantum yield can still maintain 44%, implying good chemical stability and moisture resistance due to the formation of protective BiOCl layer. This work provides new insights into the optimization mechanism for Mn2+ luminescence and overcoming the downside of their waterproofing in humid conditions.

Evaluation of Structural, Morphological, Optical and Bactericidal Action of Branched Sm‐Doped CuO Nano‐Lanceolates

AbstractOver the years, metal oxides have been leveraged to create several intriguing novel antibacterial active materials such that while finding the ways and means to increase efficiency, rare earth elements are found to have often served as potential optical dopants such that an optimistic en route to achieve the same, branched Sm‐doped CuO nano‐lanceolates were synthesized employing a wet chemical approach. The samples were then annealed at three distinct temperatures, which were fixed to 300 °C, 400 °C, and 500 °C. The nano‐lanceolates have crystallized in the monoclinic phase, according to the XRD analysis. The SEM image of Sm‐doped CuO captured at a magnification of 2 μm reveals a branched morphology, with multiple nano‐lanceolates stacked in a stem. TEM image reveals that the width of a typical nano‐lanceolate attached to a stem and its tip are found to be 87 nm and 212 nm, respectively and the obtained EDS data validate that elements including Cu, Sm, and O are present in the doped sample. The UV‐visible spectra of the annealed samples indicate that the sample annealed at 300 °C (1.43 eV) has a larger band gap than the other samples. The sample that was annealed at 400 °C has endured defect emissions that are more intense than those of other samples, according to the obtained PL spectra. In addition to these fascinating findings, the samples annealed at 300 °C, 400 °C and 500 °C exhibit a zone of inhibition of 23 mm & 24 mm, 11 mm & 12 mm and 12 mm & 11 mm, respectively for the two tested bacterial strains which authenticate that the 300 °C annealed Sm‐doped CuO nano‐lanceolate deactivates the two pathogenic bacteria more effectively compared to the other samples. As a consequence, the Sm‐doped CuO nano‐lanceolates at 300 °C could potentially be an effective alternative for antibacterial materials, particularly in biomedical applications