Deep Trap Density Research Articles

Silane modified Cr2O3/polyimide nanocomposite films with excellent surface insulation performance for space applications

The exploration of deep space significantly increases the probability of spacecraft failures due to surface electrostatic discharge, which imposes higher vacuum insulation protection requirements on polyimide (PI), the external insulation material of spacecrafts. To address this challenge, this study proposes using silane coupling agent KH550 for organic grafting treatment of Cr2O3nanoparticles, which are then used to dope and modify PI to enhance the vacuum surface insulation of PI films. The KH550 grafting improves the interface strength between the fillers and the matrix, allowing the fillers to be uniformly dispersed in the matrix. Compared to pure PI films, the prepared PI-Cr2O3@KH550 composite films exhibit significantly enhanced vacuum surface flashover voltage, improved surface/volume resistivity, and dielectric properties. The results demonstrate that PI composite films with 0.8% by mass of Cr2O3@KH550 show the most notable performance improvement, with the DC flashover voltage and impulse flashover voltage in vacuum increasing by 20.7% and 27.8%, respectively. The doping of chromium oxide nanoparticles introduces more deep traps into the PI films and reduce the surface resistivity. The higher deep trap density inhibits charge migration, thereby alleviating secondary electron emission and surface electric field distortion. Simultaneously, the lower surface resistivity facilitates dissipating surface charges and improves the surface insulation. These findings are of significant reference value for promoting the enhancement of aerospace insulation performance.

Increased Deep Trap Density in Interfacial Engineered Nanocomposite Revealed by Sequential Kelvin Probe Force Microscopy for High Dielectric Energy Storage.

Nanocomposites combining inorganic nanoparticles with high dielectric constant and polymers with high breakdown strength are promising for the high energy density storage of electricity, and carrier traps can significantly affect the dielectric breakdown process. Nevertheless, there still lacks direct experimental evidence on how nanoparticles affect the trap characteristics of nanocomposites, especially in a spatially resolved manner. Here, a technique is developed to image the trap distribution based on sequential Kelvin probe force microscopy (KPFM) in combination with the isothermal surface potential decay (ISPD) technique, wherein both shallow and deep trap densities and the corresponding energy levels can be mapped with nanoscale resolution. The technique is first validated using the widely-used commercial biaxially oriented polypropylene, yielding consistent results with macroscopic ISPD. The technique is then applied to investigate polyvinylidene fluoride-based nanocomposites filled with barium titanate nanoparticles, revealing higher deep trap density around surface-modified nanoparticles, which correlates well with its increased breakdown strength. This technique thus provides a powerful spatially resolved tool for understanding the microscopic mechanism of dielectric breakdown of nanocomposites.

Halide Engineering in Mixed Halide Perovskite-Inspired Cu2AgBiI6 for Solar Cells with Enhanced Performance.

Cu2AgBiI6 (CABI) is a promising perovskite-inspired absorber for solar cells due to its direct band gap and high absorption coefficient. However, the nonradiative recombination caused by the high extrinsic trap density limits the performance of CABI-based solar cells. In this work, we employ halide engineering by doping bromide anions (Br-) in CABI thin films, in turn significantly improving the power conversion efficiency (PCE). By introducing Br- in the synthetic route of CABI thin films, we identify the optimum composition as CABI-10Br (with 10% Br at the halide site). The tailored composition appears to reduce the deep trap density as shown by time-resolved photoluminescence and transient absorption spectroscopy characterizations. This leads to a dramatic increase in the lifetime of charge carriers, which therefore improves both the external quantum efficiency and the integrated short-circuit current. The photovoltaic performance shows a significant boost since the PCE under standard 1 sun illumination increases from 1.32 to 1.69% (∼30% relative enhancement). Systematic theoretical and experimental characterizations were employed to investigate the effect of Br- incorporation on the optoelectronic properties of CABI. Our results highlight the importance of mitigating trap states in lead-free perovskite-inspired materials and that Br- incorporation at the halide site is an effective strategy for improving the device performance.

Iodide manipulation using zinc additives for efficient perovskite solar minimodules

Interstitial iodides are the most critical type of defects in perovskite solar cells that limits efficiency and stability. They can be generated during solution, film, and device processing, further accelerating degradation. Herein, we find that introducing a small amount of a zinc salt- zinc trifluoromethane sulfonate (Zn(OOSCF3)2) in the perovskite solution can control the iodide defects in resultant perovskites ink and films. CF3SOO̶ vigorously suppresses molecular iodine formation in the perovskites by reducing it to iodide. At the same time, zinc cations can precipitate excess iodide by forming a Zn-Amine complex so that the iodide interstitials in the resultant perovskite films can be suppressed. The perovskite films using these additives show improved photoluminescence quantum efficiency and reduce deep trap density, despite zinc cations reducing the perovskite grain size and iodide interstitials. The zinc additives facilitate the formation of more uniform perovskite films on large-area substrates (78-108 cm2) in the blade-coating process. Fabricated minimodules show power conversion efficiencies of 19.60% and 19.21% with aperture areas of 84 and 108 cm2, respectively, as certified by National Renewable Energy Laboratory (NREL), the highest efficiency certified for minimodules of these sizes.

Revamping Triboelectric Output by Deep Trap Construction.

High output performance is critical for building triboelectric nanogenerators (TENGs) for future multifunctional applications. Unfortunately, the high triboelectric charge dissipation rate has a significant negativeimpact on its electrical output performance. Herein, a newtribolayer is designed through introducing self-assembled molecules with large energy gaps on commercial PET fibric toform carrier deep traps, which improve charge retention while decreasing dissipation rates. The deep trap density of the PET increases by two orders of magnitude, resulting in an 86% reduction in the rate of charge dissipation and a significant increase in the charge density that can be accumulated on tribolayer during physical contact. The key explanation is that increasing the density of deep traps improves the dielectric's ability to store charges, making it more difficult for the triboelectric charges trapped by the tribolayer to escape from the deep traps, lowering the rate of charge dissipation. This TENG has a 1300% increase in output power density as a result of altering the deep trap density, demonstrating a significant improvement. This work describes a simple yetefficient method for building TENGs withultra-high electrical output and promotes their practical implementation in the sphere of the Internet of Things.

Improved direct current electrical properties of XLPE modified by graftable antioxidant and crosslinking coagent at a wide temperature range

AbstractTo enhance the DC electrical performance of cross‐linked polyethylene (XLPE), the graftable antioxidant methacrylic acid 2‐hydroxy‐3‐(4‐anilinoanilino) propyl ester (GA), which contains carbonyl and amino groups, and the crosslinking coagent trimethylolpropane trimethacrylate (TMPTMA), which contains carbonyl groups, are individually or co‐grafted onto XLPE. The slightly higher deep trap density introduced by higher grafting concentration of TMPTMA results in more significant suppression effect of conductance current and enhanced breakdown strength at a lower temperature, while the suppression effect for the conductance current at 90°C becomes weakened due to limited trap energy. Meanwhile, the deeper energy level introduced by GA suppresses the conductance current and improves the electrical strength of XLPE at 90°C more significantly. By co‐grafting, the conductance current of XLPE in a wide range temperature can be significantly reduced, especially for the temperature dependence of conductance current, which is beneficial to suppress the field strength reversal. The results of thermally stimulated current and molecular simulation show that the polar groups of two monomers introduce deep charge traps in XLPE. The co‐grafting system ensures the rationality of the crosslinking reaction kinetics and does not affect the cable manufacturing.

Influence mechanism of UVIV on DC surface flashover performances of silicone rubber: From molecule modification to macroscopic characteristics improvement

In surface science, surface flashover, which poses a severe danger to the safe operation of modern silicone rubber (SIR)-based electrical equipment, is a continuous discharge event that happens when an intense electric field is produced along the gas-solid interface. To improve the flashover performance, the ultraviolet irradiation in vacuum (UVIV) technique is proposed to modify the SIR surface and the DC flashover threshold increases approximately 14.8 % after 6 h UVIV treatment. Then, the influence mechanisms of UVIV are investigated from microscopic molecule modification to macroscopic flashover performance: The UVIV generates high-energy photons to break CH and SiC bonds in SIR chains, and atoms, group, side chains, and free radicals in chains recombine through the thermally dynamic, causing SIR chains to crosslink. The crosslink chain structure enhances the deep trap energy around the SiOSi bond and introduces large amounts of deep traps. The increment in surface deep trap energy and density captures electrons. It establishes a high electrostatic near the cathode barrier that impedes subsequent electron injection, causing surface charge density decreases far away from the cathode. The reduced surface charges restrict the collision ionization in gas, finally increasing the DC surface flashover voltage through UVIV treatment.

Illuminating Trap Density Trends in Amorphous Oxide Semiconductors with Ultrabroadband Photoconduction

AbstractUnder varying growth and device processing conditions, ultrabroadband photoconduction (UBPC) reveals strongly evolving trends in the defect density of states (DoS) for amorphous oxide semiconductor thin‐film transistors (TFTs). Spanning the wide bandgap of amorphous InGaZnOx (a‐IGZO), UBPC identifies seven oxygen deep donor vacancy peaks that are independently confirmed by energetically matching to photoluminescence emission peaks. The subgap DoS from 15 different types of a‐IGZO TFTs all yield similar DoS, except only back‐channel etch TFTs can have a deep acceptor peak seen at 2.2 eV below the conduction band mobility edge. This deep acceptor is likely a zinc vacancy, evidenced by trap density which becomes 5‐6× larger when TFT wet‐etch methods are employed. Certain DoS peaks are strongly enhanced for TFTs with active channel processing damage caused from plasma exposure. While Ar implantation and He plasma processing damage are similar, Ar plasma yields more disorder showing a ≈2 × larger valence‐band Urbach energy, and two orders of magnitude increase in the deep oxygen vacancy trap density. Changing the growth conditions of a‐IGZO also impacts the DoS, with zinc‐rich TFTs showing much poorer electrical performance compared to 1:1:1 molar ratio a‐IGZO TFTs owing to the former having a ∼10 × larger oxygen vacancy trap density. Finally, hydrogen is found to behave as a donor in amorphous indium tin gallium zinc oxide TFTs.

High temperature energy storage and release properties of polyimide nanocomposites simulated by considering charge trapping effects

AbstractDielectric energy storage capacitors with excellent high temperature resistance are essential in fields such as aerospace and pulse power. However, common high‐temperature resistant polymers such as polyimide (PI) and polyether sulfone have low energy storage densities and energy efficiencies at high temperature, which are greatly limited in practical applications. The polymer nanocomposites prepared by doping modification can regulate the charge injection and transport process, and improve the high‐temperature energy storage performance. However, the quantitative relationship between charge injection and charge trapping and the energy storage performance of linear polymer nanocomposites still needs further study. An energy storage and release model considering the charge trapping effects is constructed by the authors. We simulate the high‐temperature energy storage properties of polyimide nanocomposite dielectrics (PI PNCs) with different charge injection barriers and trap parameters at 150°C. A triangular voltage is applied to the electrodes at both sides of the PI PNCs, the electric displacement‐electric field loop is simulated, and the discharged energy densities and energy efficiencies are calculated. The simulation results are consistent with the experimental results. Increasing the charge injection barrier, deep trap energy and deep trap density can effectively reduce the charge injection and the carrier mobility, thereby improving the discharged energy densities and energy efficiencies of dielectric capacitors. In the case of low charge injection barrier (1.3 eV), with the increase of deep trap energy (0.7–1.5 eV) and deep trap density (1 × 1021–1 × 1025 m−3), the discharged energy density changes from 0.20 to 1.44 Jcm−3, the energy efficiency changes from 9.0% to 99.9%, and the high‐temperature energy storage performance improves significantly. This research provides theoretical and model support for the improvement of the high‐temperature energy storage performance of nanocomposites.

Enhancement in Electrical Properties of Impact Polypropylene Copolymer for Cable Insulation Induced by Rapid Cooling

Impact polypropylene copolymer (IPC) is a promising eco-friendly power cable insulating material with great potential to replace the thermosetting cross-linked polyethylene (XLPE). This article compares the breakdown strength and water tree resistance of IPC and isotactic polypropylene (iPP) after different cooling rates. Unexpectedly, an abnormal enhancement of IPC’s insulating property is discovered. The breakdown strength and water tree resistance of IPC are both increased after rapid cooling, which is opposite to the electrical property deterioration generally found on iPP and XLPE with similar treatment. To reveal the mechanism of abnormal enhancement of IPC, the crystalline structure, phase morphology, and trap distribution are characterized. The results indicate that rapid cooling induces an abnormal increase in the crystallinity of IPC due to the formation of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> crystals, which in turn increases the deep trap level and density and leads to enhanced breakdown strength. Moreover, the formation of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> crystal can also enhance the inter-lamellar coupling and result in higher tensile yield strength, further, decreasing the water tree initiation probability. These results reveal that rapid cooling can significantly regulate the performance of IPC, which should be given serious consideration for the application of IPC in cable insulation.

Probing the Genuine Carrier Dynamics of Semiconducting Perovskites under Sunlight.

Understanding the nature of photogenerated carriers and their subsequent dynamics in semiconducting perovskites is important for the development of solar cell materials and devices. However, most ultrafast dynamic measurements on perovskite materials were conducted under high carrier densities, which likely obscures the genuine dynamics under low carrier densities in solar illumination conditions. In this study, we presented a detailed experimental study of the carrier density-dependent dynamics in hybrid lead iodide perovskites from femtosecond to microsecond using a highly sensitive transient absorption (TA) spectrometer. From the dynamic curves with low carrier density in the linear response range, we observed two fast trapping processes that occurred in less than 1 ps and tens of picoseconds, attributed to the shallow traps, and two slow decays with lifetimes of hundreds of nanoseconds and longer than 1 μs, related to the trap-assisted recombination and trapping at deep traps. Further TA measurements clearly show that PbCl2 passivation can effectively reduce both shallow and deep trap densities. These results provide insights into the intrinsic photophysics of semiconducting perovskites with direct implications for photovoltaic and optoelectronic applications under sunlight.

Deep Trap Boosted Ultrahigh Triboelectric Charge Density in Nanofibrous Cellulose-Based Triboelectric Nanogenerators

For their use in self-powered implantable or wearable electronics, cellulose nanofiber (CNF)-based triboelectric nanogenerators (TENGs) have drawn a lot of attention. However, the low triboelectric charge density (TECD) hinders its further application as a tribolayer for TENGs. In this work, a sulfonated cellulose nanofiber was prepared as an electropositive tribolayer for TENGs to obtain ultrahigh electrical output performance. Since the introduction of sulfonic acid effectively increased the dielectric properties and hole deep trap density of the CNF film, the triboelectric charge storage capacity of the CNF-SO3Na film was improved. The results showed that the TECD of the CNF-SO3Na film increased by 460% compared with the pristine CNF film. Furthermore, the dielectric constant and deep trap density of the CNF-SO3Na film increased by 2.4 times and 8.1 times. This work encourages the use of TENGs in real-world wireless transmission applications by outlining an easy and effective method for building high-performance TENGs.

Effect of Trap Regulation on Vacuum DC Surface Flashover Characteristics of Nano-ZnO/PI Film.

The operating safety of spacecraft in space environments is closely related to the surface discharging phenomenon of dielectrics such as polyimide (PI) film in solar arrays; moreover, carrier traps in the dielectric can affect its insulation performance. Therefore, to improve the vacuum surface flashover characteristics of PI film by nano modification and reveal the effect of trap distribution on the flashover of PI composite film, first, the original PI and nano-ZnO/PI composite films with different additive amounts (0.5, 1, 2, and 3 wt.%) were prepared by in situ polymerization and their performance was evaluated by the physicochemical properties characterized by methods such as thermogravimetric analysis; second, the surface traps of the original and nanocomposite films were measured and calculated by surface potential decay method, and the carrier mobility was also obtained; finally, the vacuum direct current (DC) surface flashover characteristics and bulk resistivity of all the film samples were measured and analyzed. The experiment results showed that with the increase in the amount of nano-ZnO, both the shallow and deep trap density increased significantly, while the trap energy varied slightly, and the surface flashover voltage also increased obviously. Based on the multi-core model, the increases in the shallow and deep trap density after the introduction of nano-ZnO into the PI matrix was analyzed from the microscopic perspective of the interface. Based on the comparative analysis of the trap distribution and surface flashover voltage characteristics, a bilayer model of vacuum DC surface flashover development was proposed. In the bilayer model, deep traps and shallow traps play a dominant role in the vacuum–solid interface and the inner surface of the dielectric, respectively, and increasing the trap density could effectively inhibit secondary electron multiplication on the surface and accelerate charge dissipation inside the film. Consequently, nano-ZnO can purposefully control the trap distribution, and then improve the flashover characteristics of nano-ZnO/PI composite films, which provides a new approach for improving the spacecraft material safety.

Inspection of the Defect State Using the Mobility Spectrum Analysis Method

Mobility spectrum analysis (MSA) is a method that enables the carrier density (and mobility) separation of the majority and minority carriers in multicarrier semiconductors, respectively. In this paper, we use the p-GaAs layer in order to demonstrate that the MSA can perform unique facilities for the defect analysis by using its resolvable features for the carriers. Using two proven methods, we reveal that the defect state can be anticipated at the characteristic temperature in which the ratio () that is associated with the density of the minority carrier , to the density of the majority carrier , exceeds 50%. (1) Using a p-GaAs Schottky diode in a reverse bias regime, the position of the deep level transient spectroscopy (DLTS) peak is shown directly as the defect signal. (2) Furthermore, by examining the current–voltage–temperature (I–V–T) characteristics in the forward bias regime, this peak position has been indirectly revealed as the generation–recombination center. The DLTS signals are dominant around the , according to the window rate, and it has been shown that the peak variation range is consistent with the temperature range of the temperature-dependent generation–recombination peak. The is also consistent with the temperature-dependent thermionic emission peak position. By having only through the MSA, it is possible to intuitively determine the existence and the peak position of the DLTS signal, and the majority carrier’s density enables a more accurate extraction of the deep trap density in the DLTS analysis.

Mechanism of ozone-improved surface flashover performance of epoxy composites

Surface flashover is a serious threat to the stable operation of advanced electrical applications. Ozone modification has recently been developed for improving the surface flashover performance. However, the effect of ozone on surface properties is still not fully elucidated. In this work, various concentrations of ozone are used to modify epoxy composites and their DC flashover voltages in SF6 at 0.1 MPa are evaluated. The results show that the flashover voltage of sample modified by 130 mg/L ozone for 4 h is improved by 22.6%, from 31.29 kV to 38.35 kV. It is proved to be highly related to the surface chemistry and trap properties. The X-ray photoelectron spectroscopy (XPS) spectra shows that some C–H and CC bonds on the surface are oxidized to C–O and CO bonds. The results of simulation and surface trap demonstrate that the oxidized C–O and CO bonds change the frontier orbitals and density of states, thus leading to a lower deep trap density. The lower trap density alleviates the generation of electron avalanche and eventually improves the flashover voltage. This work reveals the mechanism of ozone modification improving surface flashover voltage and provides a promising route to enhance the surface flashover performance.

Enhanced breakdown strength and restrained dielectric loss of polypropylene/maleic anhydride grafted polypropylene/core‐shell ZrO2@SiO2 nanocomposites

AbstractTo simoutinusly achieve improved breakdown strength (BDS) and suppressed dielectric loss, a modified ternary nanocomposite composed of polypropylene (PP), maleic anhydride‐grafted PP and core‐shell structure SiO2@ZrO2 nanoparticles is proposed. By tailoring the thickness of SiO2 shell from 3 to 11 nm and the nanofillers content from 0.5 to 5 wt%, the particles disparsion is improved and meanwhile both the deep trap density and the interaction force between molecules are enhanced. In consequence, the restricted transportation of electrons along molecule chains as well as between chains together raise the DC BDS, that the BDS of optimum sample film reaches 430.8 kV/mm, 23% higher than neat PP. Besides, the ternary nanocomposites with SiO2@ZrO2 less than 3 wt% maintain the tanδ below 0.3% at a broad frequency ranging from 0.1 Hz to 100 kHz, which is an extremely low level same as neat PP.

Simulation of DC surface flashover of epoxy composites in compressed nitrogen

To date, numerical simulation techniques for surface flashover are still under development. In this work, a DC surface flashover numerical simulation model is constructed based on a gas–solid coupling surface flashover theoretical model with a multilayered structure at the gas–solid interface. Considering the effects of solid, gas, and gas–solid interaction on surface flashover, bipolar charge transport in the solid surface layer, collision ionization in the gas phase layer, secondary electron emission, and gas adsorption in the gas surface layer are combined to calculate the surface flashover voltage. By initializing model parameters, surface charge transport dependent dc surface flashover voltages of epoxy composites in compressed nitrogen are calculated. The results indicate that the surface flashover voltage increases with surface deep trap level, deep trap density, shallow trap density, and carrier mobility; however, surface flashover voltage decreases with surface shallow trap level and surface charge density. To further investigate the effects of surface trap on surface flashover, a “U-shaped” curve is constructed to describe the relationship between surface flashover voltage and surface trap level by the simulation method which shows good agreement with experimental results. The simulation indicates surface flashover voltage of epoxy composites is influenced by surface deep and shallow traps in the solid surface layer—shallow traps mainly influence surface charge dissipation, while deep traps mainly influence electron emission on the solid surface. The value of Ptr/Pde is crucial for the dominating surface trap in surface flashover.

DC breakdown characteristics and charges accumulation behaviour of thermally upgraded paper aged in natural ester

Considering that the working temperature is much higher in high-voltage direct-current (HVDC) convert transformers than in conventional AC transformers, the combination of thermally upgraded paper and natural ester might be a better choice to withstand high temperature in long-term operation. This study compares the chemical structure, DC breakdown voltage, space charge and trap distribution of thermally upgraded paper aged in natural esters and mineral oil. The relationship between DC breakdown and accumulated charges was analyzed. Results show that the thermally upgraded paper aged in natural ester (NEI-TUP) has a higher volume resistivity and DC breakdown voltage than that aged in mineral oil (MOI-TUP). The NEI-TUP group has a larger deep trap density than the MOI-TUP group due to the chemical structure of natural ester. The larger deep trap density could contribute to the lower charge accumulation quantity and higher DC breakdown voltage. The thermally upgraded paper immersed in natural ester presents better insulation capability under thermal and DC electrical stress than that immersed in conventional mineral oil. This research indicated that the combination of thermally upgraded paper and natural ester might be a potential alternative for the mineral oil immersed paper in the future.

Influence of thermally induced self‐assembly shish‐kebab crystal on charge transport behaviour in polypropylene/elastomer blends

This paper reports on the influence of thermally induced self-assembly shish-kebab crystal on charge transport behaviour in polypropylene (PP) and PP/propylene-based elastomer (PBE) blends. The film samples with the shish-kebab crystal were prepared by adding a β nucleating agent TMB-5 under thermally induced self-assembly. Polarised optical microscope （POM）, X-ray diffraction (XRD) and differential scanning calorimetry (DSC) measurements were performed to understand the crystallisation characteristics of samples. Carrier trap distribution was analysed by isothermal surface potential decay (ISPD) method, and DC breakdown strength measured as well. The decrease of shish-kebab crystal size, the reduction of trap level, the increase of shallow trap density and the decrease of deep trap density were obtained with the TMB-5 content. The hopping distance of charges decreased with the shallow trap density increasing. The DC breakdown strength for PP/PBE/TMB-5 was higher than that for PP/TMB-5. It is suggested that deep traps are formed on the clear shish-kebab crystal boundaries, while shallow traps are induced by the elastomer and the un-crystallisation nucleating agents. Both the carrier trap formation on the crystal boundary and the physical channel orientation of the shish-kebab crystals affect the charge transport behaviour.

Bulk and interface defects analysis of n-CdS/p-Si heterojunction solar cell

Interface defects are detrimental for the performance of n-CdS/p-Si heterojunction solar cells. A model based on simulation studies has been developed in this work to correlate the defect density and the cell performance. Deep trap density, shallow trap density, interface defect density, and electron selective layer thickness are used as simulation parameters. Interface traps are found to be more dominant in deteriorating the device performance than the deep traps and the shallow traps. The effects of Cz-Si and FZ-Si are also studied in terms of trap density. The best efficiency determined through simulation in the present study for n-CdS/p-Si heterojunction solar cell is 18.72%. • Developed a self-consistent simulation model for n-CdS/p-Si heterojunction cell. • Simulation model for n-CdS/p-Si heterojunction cell produces 18.72% efficiency. • Interface defects are detrimental problem for n-CdS/p-Si heterojunction cell. • FZ-Si has better performance than Cz-Si in n-CdS/p-Si cell. • Thicker CdS layer is detrimental for the performance of n-CdS/p-Si cell.