Decay Time Research Articles

Temperature dependence of photoluminescence kinetics and scintillation properties of LuY2(Al5-xScx)O12:Ce (x = 1, 1.5, 2) garnet single-crystalline films

The temperature dependence of photoluminescence (PL) kinetics and scintillation properties were investigated in LuY2(Al5-xScx)O12:Ce (x = 1, 1.5, 2) garnet single-crystalline films grown by the isothermal liquid phase epitaxy method. With the increase of Sc content, the Ce3+ 5d1 level was shifted to higher energy while the Ce3+ 5d2 level was shifted to lower energy due to the decrease in crystal field splitting of the 5d levels. Activation energy of thermal quenching, determined from temperature-dependent PL decay times, decreased with increasing Sc content. At room temperature, the decrease of light yield (LY) value with increasing Sc content is caused by the thermal ionization process. LuY2(Al4Sc)O12:Ce showed a LY value of 510 photons/MeV when excited by 5.5 MeV α-particles, which is ∼21 % larger than that of Lu2Y(Al4Sc)O12:Ce due to a smaller bandgap Eg of the former.

A voltage-driven dual-mode MoSe2 photodetector with graphene as van der Waals contact

Two-dimensional (2D) molybdenum selenide (MoSe2) is promising for use in the development of photodetectors for the harvesting of light from the ultraviolet to the near-infrared band, while high responsivity and fast response speed are difficult to simultaneously realize. Herein, we present a dual-mode MoSe2 photodetector with asymmetric electrodes, in which graphene and Cr metal are utilized as ohmic and Schottky contacts, respectively. The photodiode possesses fabulous Schottky characteristics, with a rectification ratio of ∼250 and a low dark current of ∼40 pA at −1 V. Under forward bias voltage of 1 V, the photodetector works in photoconductive mode with a slow response speed (decay time: ∼5 min) but high responsivity (632 mA W−1). However, at reverse bias voltage, the photodetector acts as a photovoltaic-type device due to the Schottky barrier between Cr and MoSe2. Because of the reinforced built-in electric field, the photodetector driven at −5 V shows much faster response speeds (rise time: 1.96 ms; decay time: 755 µs). This study provides a deep understanding of asymmetric structure MoSe2 photodetectors operated in two modes, which promotes a forward step toward 2D material optoelectronics.

Nanoparticle ZnS:Ag/6LiF - A new high count rate neutron scintillator with pulse shape discrimination

Abstract A neutron sensitive scintillator employing nanoparticles of ZnS:Ag has been developed for the first time. Pulse shape differences between neutron and gamma signals were observed in this material and neutron-gamma discrimination was applied. With initial signal processing parameters, gamma sensitivities of 8.5 × 10-6 to 60Co gammas were achieved. The average primary decay of neutron scintillation in nanoparticle ZnS:Ag/6LiF was measured to be 18ns, and afterglow was significantly suppressed in comparison to standard ZnS:Ag/6LiF scintillators that employ micron sized ZnS:Ag. Fast decay times and minimal afterglow indicate potential for use in high count rate capability applications. Prospective count rate capabilities were investigated here as proof of concept, with rates of 1.12Mcps measured for a single readout channel with less than 3.5% count loss. This is approximately 70 times greater than the count rate capability of the current standard ZnS:Ag/6LiF scintillation detectors. With improvements to signal processing and scintillator composition, nanoparticle ZnS:A/6LiF could be a promising candidate for future high rate capability neutron detectors.

Effect of thickness on properties of La-doped Zinc Blende/Wurtzite ZnO thin films prepared by spray pyrolysis

Abstract Thin films of ZnO doped with 3wt% Lanthanum were deposited on glass substrates using spray pyrolysis for varying thicknesses. The impact of thickness on the physical properties of the films was investigated using various techniques. XRD results revealed the formation of a mixture of two phases, cubic Zinc Blende (ZB) and hexagonal Wurtzite (WU), with their ratios changing based on film thickness. Crystallite size measurements indicated that the cubic phase granules remained stable at 14.6 nm up to a thickness of 719 nm, decreasing to 14 nm at 846 nm, while the crystallite size of the hexagonal phase increased to 18 nm at 846 nm. FE-SEM images showed changes in surface morphology with increasing thickness, and EDX analysis demonstrated a consistent La/Zn ratio across all film thicknesses. The refractive index exhibited a shift from normal to abnormal dispersion when the thickness exceeded 719 nm, and the high-frequency dielectric constant decreased from 3.2 to 2.91 as thickness increased. Additionally, optical band gaps ranged from a minimum of 3.19 eV at 719 nm thickness to a maximum of 3.23 eV at 846 nm thickness. The study examined the effectiveness of the deposited films in blocking UV light with a wavelength of 365 nm. It was discovered that the decay time significantly decreased to 143s at a thickness of 661 nm, compared to longer times observed at other thicknesses.

Solution processed CuInS2/SnO2 heterojunction based self-powered photodetector for UV encrypted visible light communication

Abstract A photodetector (PD) featuring dual-band detection capability and self-powering attributes is crucial for various applications in sensing, communication, and imaging. Here, we present a self-powered PD based on a solution-processed CuInS2/SnO2 heterojunction capable of detecting UV and visible light spectra. The CuInS2 layer was composed of ∼2nm-sized quantum dots (QDs) synthesized using the hot injection method, while the SnO2 layer was fabricated using a straightforward solgel technique. This self-powered PD displayed a significant spectral response across both ultraviolet (UV) (355nm) and visible light (532nm) ranges, all accomplished without the need for external bias. The PD demonstrates rapid detection, with rise and decay times of 125ms and 156ms for visible light and 85ms and 200ms for UV light, respectively, at a power level of 15mW. The PD achieved responsivity values of 10.66µA/W and 34.56µA/W for visible and UV light, respectively. The impressive capability for dual-band detection in both ultraviolet (UV) and visible light showcases the practical feasibility and utility of this device for self-powered photodetection and deciphering UV-encrypted visible light communication. Moreover, its straightforward solution-based processing attribute renders it valuable for the mass production of
devices and technology.

Post-Saccadic Oscillations of the Pupil and Lens Reduce Fixation Stability in Retinitis Pigmentosa and Age-Related Macular Degeneration.

Post-saccadic oscillations (PSOs) reflect movements of gaze that result from motion of the pupil and lens relative to the eyeball rather than eyeball rotations. Here, we analyzed the characteristics of PSOs in subjects with age-related macular degeneration (AMD), retinitis pigmentosa (RP), and normal vision (NV). Our aim was to assess the differences in PSOs between people with vision loss and healthy controls because PSOs affect retinal image stability after each saccade. Participants completed a horizontal saccade task and their gaze was measured using a pupil-based eye tracker. Oscillations occurring in the 80 to 200ms post-saccadic period were described with a damped oscillation model. We compared the amplitude, decay time constant, and frequency of the PSOs for the three different groups. We also examined the correlation between these PSO parameters and the amplitude, peak velocity, and final deceleration of the preceding saccades. Subjects with vision loss (AMD, n = 6, and RP, n = 5) had larger oscillation amplitudes, longer decay constants, and lower frequencies than subjects with NV (n = 7). The oscillation amplitudes increased with increases in saccade deceleration in all three groups. The other PSO parameters, however, did not show consistent correlations with either saccade amplitude or peak velocity. Post-saccadic fixation stability in AMD and RP is reduced due to abnormal PSOs. The differences with respect to NV are not due to differences in saccade kinematics, suggesting that anatomic and neuronal variations affect the suspension of the iris and the lens in the patients' eyes.

Photoelectrochemical properties of self-powered corundum-structured Ga2O3 nanorod array/fluorine-doped SnO2 photodetectors modulated by precursor concentrations

Herein, corundum-structured Ga2O3 (α-Ga2O3) nanorod array/fluorine-doped SnO2 (FTO) structures have been fabricated by hydrothermal and thermal annealing processes with different precursor concentrations from 0.01 to 0.06 M. The diameter and length of the nanorod arrays are much larger with increasing precursor concentrations due to more nucleation sites and precursor ions participating in the reaction procedures. The optical bandgap decreases from 4.75 to 4.47 eV because of the tensile stress relieving with increasing the precursor concentrations. Based on self-powered photoelectrochemical (PEC) photodetectors, the peak responsivity is improved from ∼0.33 mA W−1 for 0.06 M to ∼1.51 mA W−1 for 0.02 M. Schottky junctions can be formed in PEC cells. More photogenerated carriers can be produced in wider depletion region. From Mott–Schottky plots, the depletion regions become much wider with decreasing the precursor concentrations. Therefore, the enhance responsivity is owing to the wider depletion regions. Due to the reduced possibility of photogenerated holes captured by traps ascribed from fewer green and yellow luminescence defects, smaller charge transfer resistance, and shorter transportation route, the decay time becomes much faster through decreasing the precursor concentrations. Compared with the other self-powered α-Ga2O3-nanorod-array-based PEC photodetectors, it shows the fastest response time (decay time of 0.005 s/0.026 s) simply modulated by precursor concentrations for the first time without employing complex precursors, seed layers or special device designs. Compared with other high-responsivity monoclinic Ga2O3 (β-Ga2O3) self-powered photodetectors, our devices also show comparable response speed with simple control and design. This work provides the realization of fast-speed self-powered Ga2O3 based solar-blind ultraviolet photodetectors by simple modulation processes and design, which is a significant guidance for their applications in warnings, imaging, computing, communication and logic circuit, in the future.

Dual co-doping strategy for prolonged luminescence in laser-sintered BaAl2O4:Eu2+, RE3+ ceramics

This work reports on the influence of co-doping on the luminescence and persistent luminescence properties of BaAl2O4 (BaO·Al2O3) laser-sintered ceramics. The samples were doped with Eu and doubly co-doped with different rare earths (Dy, Er, Nd, Pr, and Tm) followed by laser-sintering without an atmospheric control, at a power density of 1.6 W/mm2. All sintered ceramics contained the hexagonal BaAl2O4 phase and had a homogeneous microstructure. A photoluminescence emission band centered at 495 nm was observed, which was due to the 4f65 d1 → 4f7 Eu2+ transition in the BaAl2O4 matrix. The persistent luminescence emission was monitored for 15 min after charging at 345 nm for 3 min. The combination of Nd and Dy co-doping led to substantial improvements in decay time and persistent luminescence intensity compared to individual co-doping. These results suggested that the two co-dopants interacted by modifying the trap configurations in the BaAl2O4 matrix.

Orientation-Dependent Photoconductivity of Quasi-2D Nanocrystal Self-Assemblies: Face-Down, Edge-Up Versus Randomly Oriented Quantum Wells.

Here, strongly orientation-dependent lateral photoconductivity of a CdSe monolayer colloidal quantum wells (CQWs) possessing short-chain ligands is reported. A controlled liquid-air self-assembly technique is utilized to deliberately engineer the alignments of CQWs into either face-down (FO) or edge-up (EO) orientation on the substrate as opposed to randomly oriented (RO) CQWs prepared by spin-coating. Adapting planar configuration metal-semiconductor-metal (MSM) photodetectors, it is found that lateral conductivity spans ≈2 orders of magnitude depending on the orientation of CQWs in the film in the case of utilizing short ligands. The long native ligands of oleic acid (OA) are exchanged with short-chain ligands of 2-ethylhexane-1-thiol (EHT) to reduce the inter-platelet distance, which significantly improved the photoresponsivity from 4.16, 0.58, and 4.79 mA W-1 to 528.7, 6.17, and 94.2mAW-1, for the MSM devices prepared with RO, FO, and EO, before and after ligands exchange, respectively. Such CQW orientation control profoundly impacts the photodetector performance also in terms of the detection speed (0.061 s/0.074 s for the FO, 0.048 s/0.060 s for the EO compared to 0.10 s/0.16 s for the RO, for the rise and decay time constants, respectively) and the detectivity (1.7×1010, 2.3×1011, and 7.5×1011 Jones for the FO, EO, and RO devices, respectively) which can be further tailored for the desired optoelectronic device applications. Attributed to charge transportation in colloidal films being proportional to the number of hopping steps, these findings indicate that the solution-processed orientation of CQWs provides the ability to tune the photoconductivity of CQWs with short ligands as another degree of freedom to exploit and engineer their absorptive devices.

The chemical memory of smoking tobacco.

The concentration in urine of N-acetyl-hydroxy-propyl-cisteine (3HPMA), an acrolein metabolite, has been employed as a marker of the risk of illness of smokers and the relative concentration of creatinine has been evaluated to verify the effect of moving from the practice of burning tobacco to nicotine vaping. From the results concerning the urine samples of 38 subjects, collected from 2021 to 2023 and analyzed by LC-MS/MS, corresponding to 5 active smokers, 13 previously heavy smokers who replaced traditional tobacco by vaping, and 20 non-smokers, a dramatic reduction was found in 3HPMA/creatinine in urine. 3HPMA varied from values of 2150-3100 μg gcreatinine-1 to levels of 225-625 μg gcreatinine-1 found for non-smokers, with the time decay described by the equation y = 0.3661x2 - 94.359x + 6246.4 (R2: 0.757), providing a time of approximately 10 years for tobacco memory after the cessation of the consumption of burned tobacco.

Time distribution of stimulated transition probabilities

In recent years, an increasing number of experimental results have been published for a wide variety of systems in which high-precision, ultra-fast, and ultra-short laser pulses techniques have been used to study time-resolved dynamical processes. In the absence of a theoretical prediction of the time distribution of the transition probabilities, the lifetimes τ are generally extracted by fitting the decay time with an exponential, bi-exponential or three-exponential function. In fitting the data, the short-time behavior is generally neglected. The purpose of this study is to show that an explicit formula for the time distribution of the transition probability can be determined rigorously using time-dependent perturbation theory. A formula that perfectly fits an important subset of the experimental results from t = 0 to t=∞ . We show that by following a route different from the usual procedure for deriving transition amplitudes and Einstein coefficients in time-dependent perturbation theory, one ends up with a time-dependent factor, that is, a temporal distribution function of the transition probabilities, and for the Einstein coefficients. The time distribution reported here looks in the time domain similar to the Planck distribution in the frequency domain. In fact, the behavior of the time distribution, with a maximum at 2τln⁡2 , and with τ playing the role of temperature, resembles the behavior of the Planck frequency distribution. We present several examples to demonstrate that the theoretical formula allows for easier fitting of the experimental results reported in the literature. We also show that the time distribution explains the difference in resonance heights between the experimental and theoretical blue laser spectra.

The diffusive limit of Boltzmann equation in torus

The Boltzmann equation of kinetic theory gives a statistical description of a gas of interacting particles. It is well known that the Boltzmann equation is related to the Euler and Navier–Stokes equations in the field of gas dynamics. In this paper we are concerned with the incompressible Navier–Stokes–Fourier limit of the Boltzmann equation. We prove the incompressible Navier–Stokes–Fourier limit globally in time and the time decay rate of the solution to the rescaled Boltzmann equation in a torus. For ɛ small, by using the truncated expansion and Lx,v2 – Lx,v∞ method, we prove such a limit for the general potentials γ∈(−3,1] .

Impact of nuclear effects on the ultrafast dynamics of an organic/inorganic mixed-dimensional interface

Abstract Electron dynamics at weakly bound interfaces of organic/inorganic materials are easily influenced by large-amplitude nuclear motion. In this work, we investigate the effects of different approximations to the equilibrium nuclear distributions on the ultrafast charge-carrier dynamics of a laser-excited hybrid organic/inorganic interface. By considering a prototypical system consisting of pyrene physisorbed on a MoSe2 monolayer, we analyze linear absorption spectra, electronic density currents, and charge-transfer dynamics induced by a femtosecond pulse in resonance with the frontier-orbital transition in the molecule. The calculations are based on \textit{ab initio} molecular dynamics with classical and quantum thermostats, followed by time-dependent density-functional theory coupled to multi-trajectory Ehrenfest dynamics. We impinge the system with a femtosecond (fs) pulse of a few hundred GW/cm2 intensity and propagate it for 100 fs. We find that the optical spectrum is insensitive to different nuclear distributions in the energy range dominated by the excitations localized on the monolayer. The pyrene resonance, in contrast, shows a small blue shift at finite temperatures, hinting at an electron-phonon-induced vibrational-level renormalization. The electronic current density following the excitation is affected by classical and quantum nuclear sampling through suppression of beating patterns and faster decay times. Interestingly, finite temperature leads to a longer stability of the ultrafast charge transfer after excitation. Overall, the results show that the ultrafast charge-carrier dynamics are dominated by electronic rather than by nuclear effects at the field strengths and time scales considered in this work.

Well‐posedness and time decay of fractional Keller–Segel–Navier‐Stokes equations in homogeneous Besov spaces

AbstractIn this paper, we consider the parabolic–elliptic Keller–Segel system, which is coupled to the incompressible Navier–Stokes equations through transportation and friction. It is shown that when the system is diffused by Lévy motion, the well‐posedness of the mild solution to the corresponding Cauchy problem in homogeneous Besov spaces is established by means of the Banach fixed point theorem. Furthermore, we prove the Lorentz regularity in time direction and the maximal regularity of solutions. In addition, we obtain the additional regularity and explore the time decay property of global mild solutions.

Electroconductive and photoelectric properties of Pt/(100) β-Ga2O3 Schottky barrier diode based on Czochralski grown crystal

Pt/(100) β-Ga2O3 Schottky barrier diodes were fabricated using a plate cleaved from the crystal grown by Czochralski method. Their electroconductive and photoelectric characteristics were studied. The following values were obtained: the Schottky barrier height (1.69/1.62/1.74 eV), ideality coefficient (1.09/1.14), saturation current density (9.91 × 10–15 A/cm2), diode series resistance (7.98 kΩ), and net donor concentration [(1.8–2.4) × 1018 cm–3]. The diodes demonstrate a high rectification ratio of 1010 at an applied voltage of ± 1 V and a relatively low experimental value of the leakage current density ∼10–11 A/cm2. These structures are solar-blind and also capable of operating in self-powered mode. The diodes are highly sensitive to short-wave ultraviolet radiation with a wavelength λ ≤ 265 nm. The maximum values of responsivity (20.4 A/W), external quantum efficiency (1.2 × 104%), and detectivity (9.6 × 1015 Hz0.5 × cm × W–1) of diodes were registered under exposure to irradiation at λ = 210 nm and at applied voltage of −1 V. The responsivity and external quantum efficiency values in the self-powered operation mode were 12.3 A/W and 7.2 × 103%, respectively. The diodes showed low rise and decay times in self-powered operation mode for photodiode based on Ga2O3: 14 and 30 ms, respectively.

Excellent Color Purity and Luminescence Thermometry Performance in Germanate Tellurite Glass Doped with Eu3+ and Tb3+

Germanate tellurite glasses doped with Eu3+ and Tb3+ were synthesized by the conventional melt-quenching method. There is no indication of the energy transfer between dopant ions in this host, but the co-dopants exhibit excellent color purity of 100% for Eu3+ and 80% for Tb3+. The co-doped glass exhibits yellow luminescence. The quantum yield of the Eu3+ emission is equal to 23% under 395 nm excitation. The thermal quenching of Eu3+ and Tb3+ luminescence occurs at different temperature ranges, which enables the thermal sensing properties of the material. The relative fluorescence intensity ratio (FIR) sensitivity of 0.16% K−1 was recorded in the wide range of temperatures spanning from −193 °C up to 0 °C. The temperature dependence of the decay times was also studied. The lifetime-based temperature sensitivity was determined to be 0.95% K−1 at 250 °C for Tb3+ 5D3 level emission and 0.3% K−1 at 225 °C for Eu3+ 5D1 level emission.

Luminescence of CsLa1-хCeхSiS4 thiosilicate solid solution: From STE to Ce3+ emission

A series of single crystals of CsLa1-хСехSiS4 monophasic solid solution (x = 0–1) has been obtained for the first time by high-temperature flux synthesis. Methods of XRD and chemical analysis, absorption and low-temperature (from T = 5 K) luminescent spectroscopy were used. The results of the band scheme calculating using density functional theory correlate with spectroscopy data. One non-elementary d → f emission band of Ce3+ ions is observed in the region of 520 nm in the luminescence spectra at room temperature at any value of the x parameter. The luminescence decay kinetics of Ce3+ ions upon excitation by a pulsed electron beam, X-ray synchrotron radiation or intracenter photoexcitation is characterized by a nanosecond component. As the parameter x increases, the decay time is reduced from 132 ns (x = 0.005) to 0.88 ns (x = 1). The luminescence decay kinetics upon photoexcitation at x = 0.005–0.12 is characterized by monoexponential decay with τ = 31.4 ± 0.2 ns. Concentration quenching of the Ce3+ ion photoluminescence is not observed up to the value of the parameter x = 0.12; it only appears at x = 1. The anomalously short decay time of the Ce3+ ions luminescence in CsCeSiS4 upon both X-ray excitation and photoexcitation is associated with concentration quenching.At temperature 5 K, new intense bands at 408 and 688 nm in addition to the Ce3+ emission band observed in the photoluminescence spectra of nominally pure CsLaSiS4 or at the lowest parameter value x = 0.005. These bands correspond to the luminescence of self-trapped excitons (STE) and defects. With increasing x parameter, the STE emission band is reabsorbed by the absorption of Ce3+ ions and is quenched due to the resonance energy transfer STE → Ce3+ center. Thermoluminescence glow curves of CsLa1-xCexSiS4 irradiated with X-ray at T = 90 K are characterized by several low temperature intense peaks, which indicates a high concentration of charge carrier traps.

High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGa2O4epilayers with high temperature functionality

This work reports on the fabrication of excellent quality deep ultraviolet photodetectors (DUV PDs) based on metalorganic chemical vapor deposition (MOCVD) grown spinel ZnGa2O4 thin films on c-plane sapphire. Herein, The DUV PDs by exhibiting an ultra-low dark current of 6.69 fA and a high photo-to-dark-current ratio (PDCR) of >108 at a low-power operation of 0.2 V. While PDCR reached more than 109 on applied bias of 10 V having extremely low dark current of 37 fA. The detector revealed an ultra-high responsivity of 185 and 3.53 A/W under the exposure of 107 μW/cm2 of 245 nm wavelength at room temperature (RT) and applied bias of 10 and 0.2 V, respectively, and exhibited the record-high detectivity of the order of 1017 Jones. The temperature-dependent operation remained stable across a wide temperature range, from 27 °C to 125 °C, maintaining ultra-low dark current. The nearly constant growth and decay time of DUV PDs throughout the temperature range emphasizes the robustness and reliability of PD. The ideality factor in both DUV and dark conditions nearing unity proves the dominance of the thermionic emission mechanism. Also shows the stable and slight improved performance after a year. Therefore, these findings suggest that ZnGa2O4 is a strong contender for deep UV detection that shows robustness even at high temperatures.

Ultrafast UV Luminescence of ZnO Films: Sub‐30 ps Decay Time with Suppressed Visible Component

AbstractUltrafast sub‐100 picosecond luminescence is vital in many applications involving ultrafast events and time‐of‐flight systems. Materials exhibiting fast luminescence, such as barium fluoride (BaF2) and zinc oxide (ZnO), also suffer from an intrinsically slow nanosecond (ns) to microsecond (µs) luminescence. Here, 2.2 micrometer (µm)‐ to 5.7 µm‐thick undoped ZnO films on soda‐lime glass (SLG) substrates without a buffer layer by a hybrid pulsed reactive magnetron sputtering operating in the medium‐frequency range (MF magnetron) assisted by an electron cyclotron wave resonance (ECWR) plasma is deposited. The undoped ZnO films exhibited superior optical properties characterized by intense ultraviolet (UV) luminescence, unprecedented ultrafast decay times, and for the case of MF+ECWR‐deposited films, suppressed defect‐related visible luminescence. The 2.2 µm‐thick MF‐deposited film exhibited the fastest 9‐ps decay time at room temperature. The impressive properties of the films are attributed to the use of advanced deposition technology with properly tuned plasma parameters, especially a high degree of dissociation of molecular oxygen together with an increased proportion of activated zinc particles, leading to a higher deposition rate, better crystallinity, fewer defects, and a lower proportion of oxygen vacancies. These films will pave the way toward the development of time‐of‐flight detectors, high‐resolution nuclear imaging cameras, and high‐rate ultrafast timing devices.

Analysis of modeled 3D solar magnetic field during 30 X/M-class solar flares

Using non-linear force free field (NLFFF) extrapolation, 3D magnetic fields were modeled from the 12-min cadence Solar Dynamics Observatory Helioseismic and Magnetic Imager (HMI) photospheric vector magnetograms, spanning a time period of 1 hour before through 1 hour after the start of 18 X-class and 12 M-class solar flares. Several magnetic field parameters were calculated from the modeled fields directly, as well as from the power spectrum of surface maps generated by summing the fields along the vertical axis, for two different regions: areas with photospheric |Bz|≥ 300 G (active region—AR) and areas above the photosphere with the magnitude of the non-potential field (BNP) greater than three standard deviations above |BNP|̄ of the AR field and either the unsigned twist number |Tw| ≥ 1 turn or the shear angle Ψ ≥ 80° (non-potential region—NPR). Superposed epoch (SPE) plots of the magnetic field parameters were analyzed to investigate the evolution of the 3D solar field during the solar flare events and discern consistent trends across all solar flare events in the dataset, as well as across subsets of flare events categorized by their magnetic and sunspot classifications. The relationship between different flare properties and the magnetic field parameters was quantitatively described by the Spearman ranking correlation coefficient, rs. The parameters that showed the most consistent and discernable trends among the flare events, particularly for the hour leading up to the eruption, were the total unsigned flux ϕ), free magnetic energy (EFree), total unsigned magnetic twist (τTot), and total unsigned free magnetic twist (ρTot). Strong (|rs| ∈ [0.6, 0.8)) to very strong (|rs| ∈ [0.8, 1.0]) correlations were found between the magnetic field parameters and the following flare properties: peak X-ray flux, duration, rise time, decay time, impulsiveness, and integrated flux; the strongest correlation coefficient calculated for each flare property was 0.62, 0.85, 0.73, 0.82, −0.81, and 0.82, respectively.