Dark Line Defects Research Articles

Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures

We have investigated the optical properties of heterostructured InGaN platelets aiming at red emission, intended for use as nano-scaled light-emitting diodes. The focus is on the presence of non-radiative emission in the form of dark line defects. We have performed the study using hyperspectral cathodoluminescence imaging. The platelets were grown on a template consisting of InGaN pyramids, flattened by chemical mechanical polishing. These templates are defect free, whereas the dark line defects are introduced in the lower barrier and tend to propagate through all the subsequent layers, as revealed by the imaging of different layers in the structure. We conclude that the dark line defects are caused by stacking mismatch boundaries introduced by multiple seeding and step bunching at the edges of the as-polished, dome shaped templates. To avoid these defects, we suggest that the starting material must be flat rather than dome shaped.

Electrostatic discharge induced degradation of optical-electrical properties and defect evolution of GaAs-based oxide-confined VCSELs.

GaAs-based oxide-confined vertical-cavity surface-emitting lasers (VCSELs) exhibit relatively low resistance against reliability-related damage. In order to gain a deeper understanding of the degradation and failure mechanism in oxide-confined VCSELs caused by electrostatic discharge (ESD)-induced defect proliferation, we investigated the effects of ESD stress on the degradation of optical-electrical characteristics and the evolution of defects in VCSELs under human body model test condition. The degradation threshold values for forward and reverse ESD pulse amplitudes were estimated to be 200 V and -50 V, respectively. Notably, VCSELs demonstrated greater sensitivity to reverse bias ESD compared to forward bias ESD. Analysis of optical emission and microstructure provided evidence that the device failure is attributed to an increase in ESD current density, leading to the multiplication of dark line defects (DLDs) originating from the edge of the device's oxide aperture. The formation of defects occurred suddenly in discrete events within small regions, rather than progressing gradually and uniformly. These defects propagated and led to damage across the entire active region. We believe that our results would be meaningful for improving the reliability of VCSEL in the future.

Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes

Previously reported UV-C laser diode (LD) structures have been subject to design constraints owing to dark line defects at the edge of the mesa stripe after device fabrication. To address this issue, a detailed analysis revealed that the dark line defects were dislocations generated by local residual shear stresses associated with mesa formation on highly strained epitaxial layers. A technique for controlling the local concentration of shear stress using a sloped mesa geometry was proposed based on insight gained by modeling the stress distribution at the edge of the mesa stripe. Experimental results showed that this technique succeeded in completely suppressing the emergence of dark-line defects. This technique will be useful in improving the performance of pseudomorphic AlGaN/AlN-based optoelectronic devices, including UV-C LDs.

Thermomechanical model of an oxide-confined GaAs-based VCSEL emitter

A thermomechanical model for an oxide-confined GaAs-based VCSEL emitter is presented. The impact of the lattice mismatch, the oxide shrinkage and the thermal stress on the mechanical reliability is evaluated. Under standard operating conditions, calculations show that the temperature increase has a negligible influence on the overall mechanical stress. The oxide shrinkage highly deforms the epitaxial structure at the edge of the optical aperture. At oxide corners, the calculated stress is beyond the experimental yield strength of GaAs micro-pillars, enabling the nucleation of the dislocations forming dark line defects. The high misfit stress in the quantum well layers can favor there the dislocation propagation.

Catastrophic optical damage in 808 nm broad area laser diodes: a study of the dark line defect propagation

We present a study of the propagation of dark line defects (DLDs) in catastrophically damaged 808 nm laser diodes, based on cathodoluminescence (CL) measurements and laser mode propagation simulations. Room temperature CL images show blurred DLDs running parallel to the laser cavity. Remarkably, low temperature images reveal their true morphology: the blurred lines are resolved as parallel narrow discontinuous DLDs. This morphology does not match the usually reported molten front scenario of DLD propagation. Low temperature images show that DLDs consist of a sequence of catastrophic optical damage (COD) events separated a few micrometers from each other. Consequently, a different propagation scheme is proposed. The points where the CODs occur suffer a temperature increase and these hot spots play a capital role in the propagation of the DLDs. Their influence on the beam distribution is modelled using finite element methods. The calculations evidence changes on the intensity distribution of the laser that qualitatively reproduce the DLD shapes. Additionally, the COD events result in the generation of defects in the region that surrounds them. The successive CODs in the discontinuous DLDs are rationalized in terms of the enhanced laser absorption in these sensitized regions where the laser beam is concentrated by thermal lensing.

HM-YOLOv5: A fast and accurate network for defect detection of hot-pressed light guide plates

Due to the complex texture background, uneven brightness, various defect sizes and types of hot-pressed light guide plate (LGP) images, the HM-YOLOv5 network for fast and accurate defect detection of hot-pressed LGPs is developed and evaluated in this paper. First, a hybrid attention module (HAM) is constructed by combining the spatial attention of the convolutional block attention module(CBAM) with the channel attention of the efficient channel attention network(ECA-Net), and is introduced behind each C3 module of the backbone network. HAM does not require dimensionality reduction processing, and can better fuse channel and spatial information to focus on defects targets. Therefore, the HAM can enhance the defect feature extraction ability of the network. Second, a multi-expansion convolution module (MCM) is constructed based on the pyramid structure of YOLOv5. MCM can improve the target receptive field, enrich contextual information, reduce loss of information during downsampling and improve the defect detection ability Finally, a self-built dataset is constructed by using the images of hot-pressed LGPs collected from industrial sites, and many experiments are performed using this database. Experimental results show that the mean average precision (mAP) of the network is 98.9%, especially for white point and dark line defects improved by 2.7% and 2.0% respectively, and that the detection speed can reach 417 frames per second(Fps). Compared with the mainstream surface defect detection algorithm, the accuracy and detection time are significantly improved. Moreover, the accuracy and real-time performance meet the industrial detection requirements.

Effect of thermal lensing and the micrometric degraded regions on the catastrophic optical damage process of high-power laser diodes.

Catastrophic optical damage (COD) is one of the processes limiting the lifetime of high-power laser diodes. The understanding of this degradation phenomenon is critical to improve the laser power and lifetime for practical applications. In this Letter, we analyze the defect propagation inside the cavity of quantum well (QW) high-power laser diodes presenting COD. For this, we studied the effect of highly localized thermal gradients and degraded regions on the laser field distribution. Finite element method (FEM) simulations are compared to experimental cathodoluminescence (CL) measurements. The presence of micrometric hot spots inside the QW induces the thermal lensing of the laser field. The laser self-focusing inside the cavity eventually generates a new hot spot, and, in a repetitive way, a sequence of hot spots would be created. This would account for the propagation of the dark line defects (DLDs) that are characteristic of this degradation mode.

Non-radiative recombination at dislocations in InAs quantum dots grown on silicon

We study the impact of misfit dislocations on the luminescence from InAs quantum dots (QDs) grown on Si substrates. Electron channeling contrast imaging is used together with cathodoluminescence mapping to locate misfit dislocations and characterize the resulting nonradiative recombination of carriers via near-infrared light emission profiles. With a 5 kV electron beam probe, the dark line defect width due to a typical misfit dislocation in a shallow QD active layer is found to be approximately 1 μm, with a 40%–50% peak emission intensity loss at room temperature. Importantly, we find that at cryogenic temperatures, the dislocations affect the QD ground state and the first excited state emission significantly less than the second excited state emission. At the same time, the dark line defect width, which partially relates to carrier diffusion in the system, is relatively constant across the temperature range of 10 K–300 K. Our results suggest that carrier dynamics in the QD wetting layer control emission intensity loss at dislocations, and that these defects reduce luminescence only at those temperatures where the probability of carriers thermalizing from the dots into the wetting layer becomes significant. We discuss the implications of these findings toward growing dislocation-tolerant, reliable quantum dot lasers on silicon.

Catastrophic Optical Bulk Damage – A New Failure Mode in High-Power InGaAs-AlGaAs Strained Quantum Well Lasers

ABSTRACTHigh-power single-mode (SM) and multi-mode (MM) InGaAs-AlGaAs strained quantum well (QW) lasers with emission wavelengths of 910 − 980 nm are extensively used in various fiber lasers and amplifiers for both telecom and defense applications. In particular, underseas and satellite communication systems require stringent reliability from these lasers. Since these lasers predominantly fail by catastrophic and sudden degradation due to COD, it is crucial especially for space satellite applications to investigate reliability, failure modes, and degradation mechanisms of these lasers. Catastrophic optical mirror damage (COMD) was known to be the only failure mode until our group reported a new failure mode in MM and SM InGaAs-AlGaAs strained QW lasers in 2009 and 2016, respectively. Our group reported that bulk failure due to catastrophic optical bulk damage (COBD) has become the dominant failure mode of both SM and MM lasers. Since there have been limited reports on COBD compared to COMD, the intent of this paper is to introduce our studies on COBD that have spanned the last decade. We investigated reliability, failure modes, and degradation processes in SM and MM InGaAs-AlGaAs strained QW lasers by performing short-term step-stress tests and long-term accelerated life-tests as well as failure mode analyses using various nondestructive and destructive micro-analytical techniques including electron beam induced current (EBIC), time-resolved electroluminescence (EL), deep level transient spectroscopy (DLTS), focused ion beam (FIB), and high-resolution TEM. EBIC and EL techniques were employed to study dark line defects generated in degraded lasers stressed under different test conditions. Time-resolved EL techniques were employed to study initiation and progressions of dark spots and dark lines in real time as lasers were aged. DLTS techniques were employed to study electron traps in both pristine and degraded lasers. Lastly, FIB and high-resolution TEM were employed to prepare cross sectional and plan view TEM specimens to study DLD areas in post-aged lasers. We also report our current understanding on degradation mechanisms responsible for COBD in both SM and MM lasers.

Recombination-Enhanced Effect in Green/Yellow Luminescence from BeZnCdSe Quantum Wells Grown by Molecular Beam Epitaxy

The recombination-enhanced defect reaction (REDR) effect in single green/yellow emission BeZnCdSe quantum wells (QWs) has been investigated using photoluminescence (PL) microscopy and time-resolved PL measurements. Even though a lattice hardening effect is expected in BeZnCdSe QWs alloyed with beryllium, PL intensity enhancement due to photoannealing as well as subsequent degradation due to generation of dark spot defects (DSDs) and dark line defects (DLDs) were observed. PL microscopy provided insights into the REDR effect during photoannealing. PL images were spatially inhomogeneous in intensity for the as-grown wafer, with the darker areas having size from submicrometer to 1 μm becoming brighter with the progress of photoannealing, revealing a built-in distribution of point defects incorporated in the structure during crystal growth. In addition, we showed that the PL lifetime increased with the progress of photoannealing; hence, the density of point defects decreased due to the REDR effect. A nonradiative decay channel insensitive to the REDR effect was also found in the area free from DSDs and DLDs, suggesting that another type of defect remained in the structure (note that this is not the defect reported in study of slow-mode degradation in long-lived laser diodes). As the degradation progresses, a nonradiative channel such as photocarrier diffusion and subsequent trapping by a patch of DLDs will emerge before radiative recombination.

Cathodoluminescence for the 21st century: Learning more from light

Cathodoluminescence (CL) is the emission of light from a material in response to excitation by incident electrons. The technique has had significant impact in the characterization of semiconductors, minerals, ceramics, and many nanostructured materials. Since 2010, there have been a number of innovative developments that have revolutionized and expanded the information that can be gained from CL and broadened the areas of application. While the primary historical application of CL was for spatial mapping of luminescence variations (e.g., imaging dark line defects in semiconductor lasers or providing high resolution imaging of compositional variations in geological materials), new ways to collect and analyze the emitted light have expanded the science impact of CL, particularly at the intersection of materials science and nanotechnology. These developments include (1) angular and polarized CL, (2) advances in time resolved CL, (3) far-field and near-field transport imaging that enable drift and diffusion information to be obtained through real space imaging, (4) increasing use of statistical analyses for the study of grain boundaries and interfaces, (5) 3D CL including tomography and combined work utilizing dual beam systems with CL, and (6) combined STEM/CL measurements that are reaching new levels of resolution and advancing single photon spectroscopy. This focused review will first summarize the fundamentals and then briefly describe the state-of-the-art in conventional CL imaging and spectroscopy. We then review these recent novel experimental approaches that enable added insight and information, providing a range of examples from nanophotonics, photovoltaics, plasmonics, and studies of individual defects and grain boundaries.

Extended Defect Propagation in Highly Tensile-Strained Ge Waveguides

Tensile-strained Ge is a possible laser material for Si integrated circuits, but reports of lasers using tensile Ge show high threshold current densities and short lifetimes. To study the origins of these shortcomings, Ge ridge waveguides with tensile strain in three dimensions were fabricated using compressive silicon nitride (SiNx) films with up to 2 GPa stress as stress liners. A Raman peak shift of up to 11 cm−1 was observed, corresponding to 3.6% hydrostatic tensile strain for waveguides with a triangular cross-section. Real time degradation in tensile-strained Ge was observed and studied under transmission electron microscopy (TEM). A network of defects, resembling dark line defects, was observed to form and propagate with a speed and density strongly correlated with the local strain extracted from both modeled and measured strain profiles. This degradation suggests highly tensile-strained Ge lasers are likely to have significantly shorter lifetime than similar GaAs or InGaAs quantum well lasers.

Aberration-Corrected Transmission Electron Microscopic Study of the Central Dark Line Defect in Human Tooth Enamel Crystals.

Angstrom resolution images of human tooth enamel (HTE) crystallites were obtained using aberration-corrected high-resolution transmission electron microscopy and atomic-resolution scanning transmission electron microscopy in the modes of bright field, annular dark field, and high-angle annular dark-field. Images show that the central dark line (CDL) defect observed around the center of the HTE crystals is a site for caries formation in the HTE and has a thickness of ~0.2 nm. Results also suggest that the CDL goes through one of the OH- planes.

Optical and structural properties of sulfur-doped ELOG InP on Si

Optical and structural properties of sulfur-doped epitaxial lateral overgrowth (ELOG) InP grown from nano-sized openings on Si are studied by room-temperature cathodoluminescence and cross-sectional transmission electron microscopy (XTEM). The dependence of luminescence intensity on opening orientation and dimension is reported. Impurity enhanced luminescence can be affected by the facet planes bounding the ELOG layer. Dark line defects formed along the [011] direction are identified as the facet planes intersected by the stacking faults in the ELOG layer. XTEM imaging in different diffraction conditions reveals that stacking faults in the seed InP layer can circumvent the SiO2 mask during ELOG and extend to the laterally grown layer over the mask. A model for Suzuki effect enhanced stacking fault propagation over the mask in sulfur-doped ELOG InP is constructed and in-situ thermal annealing process is proposed to eliminate the seeding stacking faults.

Phase-regularized polygon computer-generated holograms.

The dark-line defect problem in the conventional polygon computer-generated hologram (CGH) is addressed. To resolve this problem, we clarify the physical origin of the defect and address the concept of phase-regularization. A novel synthesis algorithm for a phase-regularized polygon CGH for generating photorealistic defect-free holographic images is proposed. The optical reconstruction results of the phase-regularized polygon CGHs without the dark-line defects are presented.

Probing carrier lifetimes at dislocations in epitaxial CdTe

Dark line defects arising from dislocations in epitaxial CdTe films are known to strongly limit the overall performance of optoelectronic devices. However, their effect on carrier diffusion length and lifetime in the material immediately surrounding dislocations is not well quantified. We apply a photoluminescence imaging technique to directly measure these parameters in a CdTe/MgCdTe double heterostructure. Radiative recombination is reduced by up to 85% within 5 µm of the dislocation. Additionally, the carrier diffusion length and lifetime decrease by ∼50 and ∼80%, respectively.

Corrosion-Based Failure of Oxide-Aperture VCSELs

Oxide vertical cavity surface emitting lasers (VCSELs) have been known to have a premature failure mode when operated in the presence of atmospheric water vapor, due to corrosion failure. However, information on the precise chain of failure has not previously been available. In this paper, we start by showing the field failure results in a large particle-physics application with 6,000 deployed channels. Next, evidence is shown for the chain of failure between the previously observed oxide aperture tip cracking and delamination, and how that appears to cause dark-line defect networks in the GaAs active region beneath the aperture. In addition, we show how corrosion can be monitored through spectral width narrowing and discuss other symptoms of corrosion-based degradation that show up hundreds or thousands of hours before the rapid failure takes place. Finally, possible ways of preventing corrosion-based failure are discussed.

Spatial hole burning degradation of AlGaAs/GaAs laser diodes

The degradation of AlGaAs/GaAs laser diodes is studied in detail using laser scanning confocal microscopy, cathodoluminescence images, and x-ray diffraction (XRD) techniques. Our analysis has identified a degradation mechanism that results from the periodic distribution of the carrier density and the near-field intensity originating from periodic spatial hole burning. Based on the XRD measurements, we find that the epitaxial layer enters a polycrystalline phase during degradation due to the dark line defects, and the out-of-plane strain and in-plane compressive stress are induced by degradation.

Effects of strain on defect structure in II-VI green color converters

State-of-the-art green emission efficiency has been achieved with light-emitting diodes incorporating CdMgZnSe color-converting quantum well heterostructures, although dark line defects (DLDs) limit the device reliability. We have determined that misfit strain plays an important role in the formation of extended stacking faults (SFs) and DLDs in II-VI green converters. Even small strain causes SFs to extend to accommodate misfit strain and extended SFs further give rise to DLDs when they intersect active regions. Detailed strain relaxation mechanisms for both tensile and compressive strain have been investigated, which may apply for other semiconductor heterostructures with an fcc lattice. Careful control of the layer strain via close lattice matching prevents the extension of SFs and leads to DLD-free converters.

Effects of Mg content on dark-line defects in II–VI green converters

State-of-the-art green emission efficiency is achieved with CdMgZnSe color-converting heterostructures. A unique dark-line defect formation mechanism is revealed in CdMgZnSe green converters. Stacking faults extend horizontally inside the Mg-rich window layers, and partial dislocations associated with stacking faults give rise to dark lines. Such a mechanism indicates the low stacking-fault energy of the MgSe-containing alloys and suggests that, in addition to misfit strain, Mg content also plays an important role in defect formation in II–VI semiconductors.