Dark Count Research Articles

Ultra-Low Dark Count Rate SPAD Fully Integrated in a 180 nm High-Voltage CMOS Process

Ultra-Low Dark Count Rate SPAD Fully Integrated in a 180 nm High-Voltage CMOS Process

Repeated γ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\gamma $$\\end{document} irradiation and thermal annealing via built-in thermo-electric coolers of Si avalanche photodiodes

When operating in space, on-board Silicon Geiger-Mode Avalanche Photodiodes (GM-APDs) are exposed to radiation damage that result in an increase in dark count rates. Thermal annealing has been found to mitigate the damage, although prior studies have largely focused on annealing following a single session of proton irradiation. This work reports that thermal annealing can be performed simply with the built-in thermo-electric coolers of the GM-APDs. Annealing was also done in 10 min intervals for a clearer view of the recovery curve. Mitigation of damage from repeated γ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\gamma $$\\end{document} radiation was observed from the: (1) halving of the increase in dark count rates on average and (2) outperformance of room temperature annealing (25∘\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$25\\,^{\\circ }$$\\end{document}C) by 33%\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\%$$\\end{document}. Additionally, we show that heavy doses of γ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\gamma $$\\end{document} radiation (21 krad) have a probability of causing Random Telegraph Signals in GM-APDs that can be suppressed by lowering the operating temperature.

Amplitude and time response characterization of avalanche signals in InGaAs single-photon avalanche diode

Photon and dark avalanche signals of InGaAs single-photon avalanche diodes (SPAD) are detected and counted indiscriminately, while their specific characteristics are not well understood, which hinders further performance optimization of InGaAs SPAD. Here, we investigate back-incidence InGaAs SPAD operating at room temperature by designing a dual-threshold discriminator and tuning the threshold voltage. The photon count rate and dark count rates (DCR) exhibit different abrupt-voltage variations with the threshold voltage, and the amplitude distribution of dark avalanche signals is more concentrated and slightly larger than that of photon avalanche signals. The smaller photon avalanche signals have a faster time response. It can be inferred that the above characteristics are related to the photon absorption position and carrier transport, depending on physical structure and operating mode, and dark counts are mainly caused by holes drifting from N-type material. We use a dual-threshold discriminator to reduce the time jitter and DCR caused by thermally excited carriers. The experimental results are in good agreement with theoretical analysis, indicating that the insertion of an i-InP layer or the use of a front-incidence technique can further optimize the overall performance and enable InGaAs SPAD with high performance operation at room temperature.

Parametric Research on the Deep-Junction Silicon SPADs for Wide Spectral Response and Low Dark Count Noise

Parametric Research on the Deep-Junction Silicon SPADs for Wide Spectral Response and Low Dark Count Noise

Feasibility study of YSO/SiPM based detectors for virtual monochromatic image synthesis.

The development of photon-counting CT systems has focused on semiconductor detectors like cadmium zinc telluride (CZT) and cadmium telluride (CdTe). However, these detectors face high costs and charge-sharing issues, distorting the energy spectrum. Indirect detection using Yttrium Orthosilicate (YSO) scintillators with silicon photomultiplier (SiPM) offers a cost-effective alternative with high detection efficiency, low dark count rate, and high sensor gain. This work aims to demonstrate the feasibility of the YSO/SiPM detector (DexScanner L103) based on the Multi-Voltage Threshold (MVT) sampling method as a photon-counting CT detector by evaluating the synthesis error of virtual monochromatic images. In this study, we developed a proof-of-concept benchtop photon-counting CT system, and employed a direct method for empirical virtual monochromatic image synthesis (EVMIS) by polynomial fitting under the principle of least square deviation without X-ray spectral information. The accuracy of the empirical energy calibration techniques was evaluated by comparing the reconstructed and actual attenuation coefficients of calibration and test materials using mean relative error (MRE) and mean square error (MSE). In dual-material imaging experiments, the overall average synthesis error for three monoenergetic images of distinct materials is 2.53% ±2.43%. Similarly, in K-edge imaging experiments encompassing four materials, the overall average synthesis error for three monoenergetic images is 4.04% ±2.63%. In rat biological soft-tissue imaging experiments, we further predicted the densities of various rat tissues as follows: bone density is 1.41±0.07 g/cm3, adipose tissue density is 0.91±0.06 g/cm3, heart tissue density is 1.09±0.04 g/cm3, and lung tissue density is 0.32±0.07 g/cm3. Those results showed that the reconstructed virtual monochromatic images had good conformance for each material. This study indicates the SiPM-based photon-counting detector could be used for monochromatic image synthesis and is a promising method for developing spectral computed tomography systems.

Characterization of neutron-irradiated SiPMs down to liquid nitrogen temperature

Photodetectors used in future high-energy physics experiments will need to keep sufficient performance during a few years of data-taking despite radiation load, which, for example, in the planned upgrade of the Ring Imaging Cherenkov detectors in Large Hadron Collider beauty (LHCb) experiment is estimated at about 1013\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^{13}$$\\end{document} 1-MeV neutron equivalent per cm2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^{2}$$\\end{document} (neq/cm2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^{2}$$\\end{document}). Silicon photomultipliers (SiPMs) are considered as candidates for photodetectors for this application. However, their sensitivity to neutron irradiation may seriously compromise their operation, with the increase in dark count rates being the primary limitation after the irradiation. 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In total, 5 SiPMs were irradiated at the Jožef Stefan Institute TRIGA nuclear reactor with different fluences from 109\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^{9}$$\\end{document} neq/cm2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^{2}$$\\end{document} up to 1013\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^{13}$$\\end{document} neq/cm2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^{2}$$\\end{document}. The SiPMs were also annealed at high temperatures and re-characterized after the annealing. For the SiPM characterization in all the cases, current–voltage (I-V curve) measurements, dark count rate measurements, and waveform analysis, including single photon time resolution, were carried out at different controlled temperature steps from room temperature down to the liquid nitrogen temperature. While cooling to − 20∘\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^{\\circ }$$\\end{document}C was enough for the SiPM irradiated at 109\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^{9}$$\\end{document} neq/cm2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^{2}$$\\end{document} to recover the ability to resolve single photons, by 1013\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^{13}$$\\end{document} neq/cm2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^{2}$$\\end{document}, cooling to liquid nitrogen temperature was necessary. With sufficient cooling, the measured single photon time resolution was around 90 ps FWHM for all irradiation levels.

Quantum jump photodetector for narrowband photon counting with a single atom

Using a single neutral Rb87 atom held in an optical trap, and “quantum jump” detection of single-photon-initiated state changes, we demonstrate a single-photon quantum jump photodetector (QJPD) with intrinsically narrow bandwidth and strong rejection of out-of-band photons, of interest for detecting weak optical signals in the presence of a strong broadband background. By analyzing fluorescence photon count distributions for the bright and dark states with and without excitation, we measure quantum efficiency of 2.9(2)×10−3, a record for single-pass quantum jump production, and signal-photon-unprovoked “dark jump” rate—analogous to the dark count rate of other detectors —of 3(10)×10−3jumps/s during passive accumulation plus 4.0(4)×10−3 jumps per readout, orders of magnitude below those of traditional single-photon detectors. Available methods can substantially improve QJPD quantum efficiency, dark jump rate, bandwidth, and tunability. Published by the American Physical Society 2024

Deep Mouse Brain Two-Photon Near-Infrared Fluorescence Imaging Using a Superconducting Nanowire Single-Photon Detector Array.

Two-photon microscopy (2PM) has become an important tool in biology to study the structure and function of intact tissues in vivo. However, adult mammalian tissues such as the mouse brain are highly scattering, thereby putting fundamental limits on the achievable imaging depth, which typically reside at around 600-800 μm. In principle, shifting both the excitation as well as (fluorescence) emission light to the shortwave near-infrared (SWIR, 1000-1700 nm) region promises substantially deeper imaging in 2PM, yet this shift has proven challenging in the past due to the limited availability of detectors and probes in this wavelength region. To overcome these limitations and fully capitalize on the SWIR region, in this work, we introduce a novel array of superconducting nanowire single-photon detectors (SNSPDs) and associated custom detection electronics for use in near-infrared 2PM. The SNSPD array exhibits high efficiency and dynamic range as well as low dark-count rates over a wide wavelength range. Additionally, the electronics and software permit a seamless integration into typical 2PM systems. Together with an organic fluorescent dye emitting at 1105 nm, we report imaging depth of >1.1 mm in the in vivo mouse brain, limited mostly by available labeling density and laser properties. Our work establishes a promising, and ultimately scalable, new detector technology for SWIR 2PM that facilitates deep tissue biological imaging.

A 48×2 CMOS SPAD Sensor With Regulated Dark Count

A 48×2 CMOS SPAD Sensor With Regulated Dark Count

Silicon photomultipliers for future HEP experiments

For the particle identification systems of the future high-energy physics detectors, single-photon sensors with sub-mm granularity, high sensitivity, and mitigation strategy for operation in the neutron-irradiated areas are needed. Silicon photomultipliers are considered a baseline technology because of their high photon detection efficiency, good timing resolution, and low operating voltage compared to those of vacuum-based photo sensors. After neutron irradiation, the dark counts increase dramatically and distort the signal baseline, making the single photons indistinguishable. Although the DCR of different unirradiated SiPMs varies, the devices show very similar rates when irradiated to high doses. In this work, we investigated the performance parameters of FBK NUV-HD-RH UHD-DE 1 mm2 devices and determined the working temperature. We show that the maximum operation temperature for samples irradiated with a fluence of 1012 neq/cm2 is around -100°C.

Robust Pixel Design Methodologies for a Vertical Avalanche Photodiode (VAPD)-Based CMOS Image Sensor.

We present robust pixel design methodologies for a vertical avalanche photodiode-based CMOS image sensor, taking account of three critical practical factors: (i) "guard-ring-free" pixel isolation layout, (ii) device characteristics "insensitive" to applied voltage and temperature, and (iii) stable operation subject to intense light exposure. The "guard-ring-free" pixel design is established by resolving the tradeoff relationship between electric field concentration and pixel isolation. The effectiveness of the optimization strategy is validated both by simulation and experiment. To realize insensitivity to voltage and temperature variations, a global feedback resistor is shown to effectively suppress variations in device characteristics such as photon detection efficiency and dark count rate. An in-pixel overflow transistor is also introduced to enhance the resistance to strong illumination. The robustness of the fabricated VAPD-CIS is verified by characterization of 122 different chips and through a high-temperature and intense-light-illumination operation test with 5 chips, conducted at 125 °C for 1000 h subject to 940 nm light exposure equivalent to 10 kLux.

Dark counts in optical superconducting transition-edge sensors for rare-event searches

Dark counts in optical superconducting transition-edge sensors for rare-event searches

Measurement of photo- and radio-luminescence of thin ThF[formula omitted] films

We conducted measurements on the photo- and radio-luminescence of thin ThF4 films in both the UV and visible ranges. In the UV range, we found that both luminescences are at a similar level as the internal dark counting noise of the photo-multiplier-tube (PMT). Our results suggest that thin ThF4 crystals could be used as a target for the search for 229mTh and as a medium for the future nuclear clock. The measurements indicate that using a small and thin ThF4 film can reduce background noise while maintaining the signal at the same level, achieved by increasing the 229Th enrichment. Our developed apparatus is now ready for direct measurements of 229mTh excitation and decay in ThF4.

Avalanche Terahertz Photon Detection in a Rydberg Tweezer Array.

We propose a protocol for the amplified detection of low-intensity terahertz radiation using Rydberg tweezer arrays. The protocol offers single photon sensitivity together with a low dark count rate. It is split into two phases: during a sensing phase, it harnesses strong terahertz-range transitions between highly excited Rydberg states to capture individual terahertz photons. During an amplification phase it exploits the Rydberg facilitation mechanism which converts a single terahertz photon into a substantial signal of Rydberg excitations. We discuss a concrete realization based on realistic atomic interaction parameters, develop a comprehensive theoretical model that incorporates the motion of trapped atoms and study the many-body dynamics using tensor network methods.

Feasibility study of photon-counting CT for material identification based on YSO/SiPM detector: A proof of concept.

Current photon-counting computed tomography (CT) systems utilize semiconductor detectors, such as cadmium telluride (CdTe), cadmium zinc telluride (CZT), and silicon (Si), which convert x-ray photons directly into charge pulses. An alternative approach is indirect detection, which involves Yttrium Orthosilicate (YSO) scintillators coupled with silicon photomultipliers (SiPMs). This presents an attractive and cost-effective option due to its low cost, high detection efficiency, low dark count rate, and high sensor gain. This study aims to establish a comprehensive quantitative imaging framework for three-energy-bin proof-of-concept photon-counting CT based on YSO/SiPM detectors developed in our group using multi-voltage threshold (MVT) digitizers and assess the feasibility of this spectral CT for material identification. We developed a proof-of-concept YSO/SiPM-based benchtop spectral CT system and established a pipeline for three-energy-bin photon-counting CT projection-domain processing. The empirical A-table method was employed for basis material decomposition, and the quantitative imaging performance of the spectral CT system was assessed. This evaluation included the synthesis errors of virtual monoenergetic images, electron density images, effective atomic number images, and linear attenuation coefficient curves. The validity of employing A-table methods for material identification in three-energy-bin spectral CT was confirmed through both simulations and experimental studies. In both noise-free and noisy simulations, the thickness estimation experiments and quantitative imaging results demonstrated high accuracy. In the thickness estimation experiment using the practical spectral CT system, the mean absolute error for the estimated thickness of the decomposed Al basis material was 0.014±0.010mm, with a mean relative error of 0.66%±0.42%. Similarly, for the decomposed polymethyl methacrylate (PMMA) basis material, the mean absolute error in thickness estimation was 0.064±0.058mm, with a mean relative error of 0.70%±0.38%. Additionally, employing the equivalent thickness of the basis material allowed for accurate synthesis of 70keV virtual monoenergetic images (relative error 1.85%±1.26%), electron density (relative error 1.81%±0.97%), and effective atomic number (relative error 2.64%±1.26%) of the tested materials. In addition, the average synthesis error of the linear attenuation coefficient curves in the energy range from 40 to 150keV was 1.89%±1.07%. Both simulation and experimental results demonstrate the accurate generation of 70keV virtual monoenergetic images, electron density, and effective atomic number images using the A-table method. Quantitative imaging results indicate that the YSO/SiPM-based photon-counting detector is capable of accurately reconstructing virtual monoenergetic images, electron density images, effective atomic number images, and linear attenuation coefficient curves, thereby achieving precise material identification.

Using superconducting single photon detector to improve the coupling efficiency of multimode fibers in the telescope ranging system

The receiving system adopts the coupling manner of space beam and the multimode fiber among some space target laser ranging system. The fiber coupling efficiency can affect the number of echo photons and ranging accuracy, especially in lunar laser ranging, high orbit satellite laser ranging and space debris tracking. This article proposes a method utilizing the telescope pointing technique and a four-pixel superconducting nanowire single photon detector (SNSPDs) to measure coupling efficiency of multimode fiber. SNSPDs has the excellent performance with high detection efficiency, low dark count rate, and low recovery time. In the experiment, SNSPDs receives the changing signals caused by adjusting the offset angle of the telescope. The root mean square of deviation between measured results and theoretical calculations is 4.48%. The method is based on existing laser ranging systems and is suitable for scientific engineering verification of optical fibers already installed in the system and monitoring of system status.

Batch VUV4 characterization for the SBC-LAr10 scintillating bubble chamber

The Scintillating Bubble Chamber (SBC) collaboration purchased 32 Hamamatsu VUV4 silicon photomultipliers (SiPMs) for use in SBC-LAr10, a bubble chamber containing 10 kg of liquid argon. A dark-count characterization technique, which avoids the use of a single-photon source, was used at two temperatures to measure the VUV4 SiPMs breakdown voltage (VBD), the SiPM gain (g SiPM), the rate of change of g SiPM with respect to voltage (m), the dark count rate (DCR), and the probability of a correlated avalanche (PCA) as well as the temperature coefficients of these parameters. A Peltier-based chilled vacuum chamber was developed at Queen's University to cool down the Quads to 233.15 ± 0.2 K and 255.15 ± 0.2 K with average stability of ±20 mK. An analysis framework was developed to estimate VBD to tens of mV precision and DCR close to Poissonian error. The temperature dependence of VBD was found to be 56 ± 2 mV K-1, and m on average across all Quads was found to be (459 ± 3(stat.)±23(sys.))× 103 e- PE-1 V-1. The average DCR temperature coefficient was estimated to be 0.099 ± 0.008 K-1 corresponding to a reduction factor of 7 for every 20 K drop in temperature. The average temperature dependence of PCA was estimated to be 4000 ± 1000 ppm K-1. PCA estimated from the average across all SiPMs is a better estimator than the PCA calculated from individual SiPMs, for all of the other parameters, the opposite is true. All the estimated parameters were measured to the precision required for SBC-LAr10, and the Quads will be used in conditions to optimize the signal-to-noise ratio.

Radiation Damage on Silicon Photomultipliers from Ionizing and Non-Ionizing Radiation of Low-Earth Orbit Operations.

Silicon Photomultipliers (SiPMs) are single photon detectors that gained increasing interest in many applications as an alternative to photomultiplier tubes. In the field of space experiments, where volume, weight and power consumption are a major constraint, their advantages like compactness, ruggedness, and their potential to achieve high quantum efficiency from UV to NIR makes them ideal candidates for spaceborne, low photon flux detectors. During space missions however, SiPMs are usually exposed to high levels of radiation, both ionizing and non-ionizing, which can deteriorate the performance of these detectors over time. The goal of this work is to compare process and layout variation of SiPMs in terms of their radiation damage effects to identify the features that helps reduce the deterioration of the performance and develop the next generation of more radiation-tolerant detectors. To do this, we used protons and X-rays to irradiate several Near Ultraviolet High-Density (NUV-HD) SiPMs with small areas (single microcell, 0.2 × 0.2 mm2 and 1 × 1 mm2) produced at Fondazione Bruno Kessler (FBK), Italy. We performed online current-voltage measurements right after each irradiation step, and a complete functional characterization before and after irradiation. We observed that the main contribution to performance degradation in space applications comes from proton damage in the form of an increase in primary dark count rate (DCR) proportional to the proton fluence and a reduction in activation energy. In this context, small active area devices show a lower DCR before and after irradiation, and we propose light or charge-focusing mechanisms as future developments for high-sensitivity radiation-tolerant detectors.

A Dark Count Rate Self-Adjusting Charge Pump With Negative Feedback Control for SPAD Array Biasing

A Dark Count Rate Self-Adjusting Charge Pump With Negative Feedback Control for SPAD Array Biasing

Frame-filtered ghost imaging with a SPAD array used both as a multiple “bucket” detector and an imaging camera

An approach to ghost imaging with a single SPAD array used simultaneously as a several-pixel “bucket” detector and an imaging camera is described. The key points of the approach are filtering data frames used for ghost-image reconstruction by the number of per-frame counts and superposing correlation images obtained for different “bucket” pixels. The imaging is performed in an experiment with a pseudo-thermal light source where the light intensity is so low that the dark counts have a noticeable effect on imaging. We demonstrate that the approach is capable of significantly reducing the destructive effect of dark counts on the ghost image and improving image contrast, spatial resolution, and image similarity to a reference image.