CZTSSe Solar Cells Research Articles

Passivation of Deep‐Level Defects through Chemical Environment Regulation for Efficient CZTSSe Solar Cells Based on Active Selenium Adsorption–Desorption Process

AbstractInsufficient selenization and uneven distribution of elements caused by the poor diffusion and reaction activity of selenium clusters is one of the main issues limiting the efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Here, this work designs a simple and feasible strategy to improve the activity of selenium (Se) by implementing high‐temperature treatment on graphite boxes loaded with Se pellets. The rapid adsorption/desorption characteristics of graphite on active gaseous small‐molecule selenium have successfully introduced hyperactive Se4, Se3, and Se2 into the selenization process. The results indicate that the adsorbed non‐toxic gaseous active Se3 and Se4 can quickly and uniformly diffuse into the precursor film at low temperatures, thereby inducing nucleation and grain growth at both surface and back interface simultaneously, which inhibits the upward migration and aggregation of cations, especially Cu, and promotes the homogenization of elements. The overall relatively Cu‐poor chemical environment suppresses the formation of CuZn defects and [2CuZn+SnZn] defect clusters, and also promotes the generation of favorable VCu. The band tail states and non‐radiative recombination are then optimized. Finally, the CZTSSe solar cells achieve a power conversion efficiency (PCE) of 14.5%, with VOC/VOCSQ of 67% being one of the highest in the literature.

11.88% Efficient Flexible Ag-Free CZTSSe Solar Cell: Spontaneously Tailoring the Alkali Metal Level.

Alkali metal is the requirement for highly efficient Cu2ZnSn(S, Se)4 (CZTSSe) solar cells, thus it is crucial to additionally incorporate alkali metal into the absorber layer for flexible solar cells. However, the efficiency of flexible CZTSSe devices reported to date, based on the conventional alkali incorporation strategies, still lags behind those made on rigid substrates. One of the main issues is the inability to control the alkali content and distribution in the absorber layer. Here, a facile alkaline incorporation approach is proposed, effectively regulating the content and distribution of alkali metals in the film. Such a method can spontaneously tailor the alkali metal content to a proper level, thus leading to the suppression of non-radiative recombination and a better carrier transport through the enhanced film quality and the optimized band binding structure. Finally, a champion flexible CZTSSe solar cell with an efficiency of 11.88% is achieved, the highest reported efficiency for a CZTSSe solar cell without noble Ag doping. This study affords an innovative spontaneous alkali-doping design for the preparation of high-performance flexible CZTSSe solar cells and provides a deeper insight into the extent of alkali metal doping.

Formation of Alloyed Cu2CoxZn1-xSn(S,Se)4 Absorption Layer and Its Application in Solar Cells.

Partial substitution of cations is crucial for suppressing harmful defects in Cu2ZnSn(S,Se)4 thin-film solar cells. In this study, based on the mixed n-butylammonium and butyrate solution system, the alloyed Cu2CoxZn1-xSn(S,Se)4 phase can be prepared by substituting Zn2+ with Co2+, which can suppress harmful defects and optimize the crystallinity of the Cu2ZnSn(S,Se)4 absorption layer, and improve the photoelectric conversion efficiency (PCE) of devices. By systematic investigation of the impact of Co content on the performance of devices, the optimal substitution amount of Zn2+ with Co2+ is 0.05. At this time, PCE, the open-circuit voltage (VOC), current density (JSC), and fill factor (FF) of the devices can reach 9.0%, 416 mV, 33.87 mA/cm2, and 64%, respectively. It is the first time that the replacement of Zn2+ with Co2+ is applied to optimize PCE of CZTSSe solar cells. The excellent results also demonstrate that the substitution of Zn2+ with Co2+ can become a new approach for further performance optimization of Cu2ZnSn(S,Se)4 solar cells.

Enhance the Performance of CZTSSe Solar Cells Through Inhibiting the Cu2+, Tu, and (─COOH) Association Reaction.

The Sol-gel precursor solution reaction mechanism has a significant impact on the Cu2ZnSn(S, Se)4 (CZTSSe) solar cells. It is discovered that in the Cu2ZnSnS4 (CZTS) precursor solution (CZTS-PS) in the preparation, there is an association reaction among Cu2+, thiourea (Tu), and carboxyl (-COOH), which is an important reason for the undesirable CZTSSe solar cells. The strong association reaction generates excessive Cu2+ ions, forming the CuxSe secondary phase on the surface of the CZTSSe absorber. The secondary phase causes a short circuit and deterioration of gadget performance. Following a 6-h aging period for the CZTS-PS, the average photoelectric conversion efficiency (PCE) of the device is enhanced to 8.02%, and there is also an improvement in device uniformity, as evidenced by a decrease in the standard deviation to less than 1. To inhibit the association reaction and eliminate the aging time phenomenon, a strategy is developed using hydrochloric acid to regulate the CZTS-PS environment. This strategy shifts the REDOX reaction in Cu2++Sn2+ toward the formation of Cu1++Sn4+, leading to a decrease in the defect concentrations of VSn(-/0) and CuSn(-/0), which increases the carrier concentration and reduces the impact of band tailing. The average power conversion efficiency (PCE) of the devices improved from 7.45% to 9.26%, the PCE of the best-performing CZTSSe solar cells increased from 9.25% to 9.83%, and the consistency among the devices is further enhanced, as indicated by a reduction in the standard deviation from 0.98 to 0.44. Ultimately, the device performance of the Cu2++Sn2+-DMF system improved by 11.01% (without the MgF2 layer) after optimization. This study serves as a reference for regulating the environment of the CZTS-PS to further enhance the CZTSSe devices' performance, and the photoelectric conversion efficiency is improved by ≈30%.

Reversing band bending at grain boundaries enables high-efficiency Cu2ZnSn(S,Se)4 solar cells

Kesterite solar cells show great potential for sustainable photovoltaic technology, attributed to their excellent semiconductor properties and earth abundant composition. However, undesirable band bending at the grain boundaries (GBs) in Cu2ZnSn(S,Se)4 (CZTSSe) films induces serious carrier recombination because of inhomogeneous distribution of S and Se in the grain interiors (GIs) and at GBs, which results in large open-circuit voltage deficit and overall poor performance of CZTSSe solar cells. Here, a robust hydrothermal sulfurization design has successfully inverted the band bending at the GBs, with advanced cathodoluminescence measurement confirming the transition of carrier collection pathways from the GBs to the GIs, thereby achieving efficient carrier collection within the GIs. Simultaneously, this design has effectively passivated the non-radiative recombination in the GIs, smoothing the way for carrier collection. Ultimately, a 13.7 % efficiency CZTSSe solar cell with 44 % improvement is realized by this process. This study discloses that reversing the band bending at GBs is practical to tailor the carrier collection, and thus pave the pathway for high-efficient photoelectronic devices.

Facile Tailor on the Surface of Mo Foil Toward High-Efficient Flexible CZTSSe Solar Cells.

Flexible Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is attracting much attention because of their enormous application prospects. However, current flexible CZTSSe solar cells with Mo foil as substrate still suffer from severe back interface problems due to the complexity of substrate surfaces. Herein, a facile approach to tailor the surface of the flexible substrate and modify the back interface between CZTSSe and Mo foil is proposed. The study discloses that a simple polishing can not only improve the wettability of the precursor solution on the substrate unexpectedly and thus improve the quality of the CZTSSe film, but also increase the mechanical stability of the absorber layer grown on Mo foil. The subsequent UV-ozone treatment helps to form a favorite MoO3 layer for efficient CZTSSe devices. Surprisingly, the quasi-ohmic contact is formed between CZTSSe/Mo foil by such combined treatments and thus promoting the carrier collection. Consequently, the efficiency of the flexible CZTSSe solar cell is significantly improved from 4.94% to 10.32% without anti-reflection layer. The bending durability of the cell fabricated on the treated Mo foil is increased greatly. This work discloses that back contact interface is very important for the carrier collection and thus the highly efficient flexible thin film solar cells.

Achieving 11.23 % efficiency in CZTSSe solar cells via defect control and interface contact optimization

The high open-circuit voltage deficit (VOC, def) caused by structural imperfections in the absorber layer and charge loss during carrier transport is a critical barrier affecting the performance of Cu2ZnSn(S,Se)4 (CZTSSe) devices. In this work, Ag was added to the DMF-based Cu+-Sn4+ system, which significantly improved the crystal morphology and electrical properties of the absorber layer. Additionally, optimizing the selenization process not only reduced surface roughness and eliminated voids at the bottom of the absorber layer but also resulted in the formation of a MoSe2 back interface layer with a more suitable thickness. These measures collectively enhanced the overall quality of the absorber layer, reducing the formation of deep-level defect clusters and effectively boosting carrier transport efficiency. Consequently, the concentration of bulk and interfacial defects decreased, and the impact of potential barriers on carrier movement was minimized. With these comprehensive improvements, the power conversion efficiency of CZTSSe solar cells increased from 8.48 % to 11.23 %. Our research demonstrates that optimizing the structure of the absorber layer can effectively enhance the performance of CZTSSe solar cells, providing valuable insights for the fabrication of high-efficiency devices in the future.

Enhancing the photovoltaic efficiency of CZTSSe thin-film solar cells via Ag-doping induced defect modulation

Defect modulation is one of the key factors in determining the performance of solar cells, and the presence of defects tends to adversely affect carrier recombination and transport, thus having a direct impact on both cell stability and efficiency. Ag doping can modulate the defects, but in-depth studies on the mechanism of the effect are needed. Therefore, an in-depth study of the effect of Ag incorporation on the defect modulation mechanism of Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is of great practical significance for understanding the mechanism of action of Ag doping and further optimising the cell performance. In this study, (AgxCu1-x)2ZnSn(S,Se)4 (0 ≤ x ≤ 1) (ACZTSSe) solar cells were successfully prepared by N, N-dimethylformamide (DMF) solution, which have the characteristics of reducing defects and enhancing photovoltaic performance. After the introduction of Ag, the absorber formed a crystal structure with few holes and penetrating top and bottom. And the electrical performance of the solar cell is significantly improved, J0 is reduced from 4.6 × 10−5 A/cm2 to 2.7 × 10−6 A/cm2, and its contribution to the photovoltaic conversion efficiency (PCE) improvement reaches 142%. This indicates that the introduction of Ag helps to optimize the quality of the absorber, thereby reducing the concentration of interfacial and bulk defects. It also reduces carrier recombination and improves carrier lifetime from 0.86 ms to 1.75 ms. Ultimately increasing our cell efficiency from 7.55% to 10.64% when the Ag content reached 5%. These results clearly show that we have successfully achieved the modulation of defects in CZTSSe solar cells by Ag doping.

Enhanced CZTSSe Thin‐Film Solar Cell Efficiency: Key Parameter Analysis

This work presents a numerical simulation study on CZTSSe‐based thin‐film solar cells using Silvaco Atlas software, focusing on optimization and loss analysis. Starting from an initial power conversion efficiency of 12.73%, the ZnO/CdS/CZTSSe cell structure is systematically optimized. Through precise adjustment of layer thickness and doping density, the efficiency is improved to 18.75%. The optimal parameters are 2.5 μm (1017 cm−3) for CZTSSe, 0.01 μm (1018 cm−3) for CdS, and 0.02 μm (1019 cm−3) for ZnO. Loss analysis reveals that increasing CZTSSe thickness beyond 2.5 μm leads to higher bulk series resistance, while thicker CdS and ZnO layers reduce photocurrent generation. Doping density significantly impacts open‐circuit voltage, while layer thickness primarily affects short‐circuit current and fill factor. Performance improves at lower temperatures, achieving 22.2% efficiency at 250 K. These findings provide valuable insights for developing high‐efficiency CZTSSe solar cells.

Over 10% efficient Cu2ZnSn(S, Se)4 Thin-Film cells prepared by aluminium doping

Cu2ZnSn(S,Se)4(CZTSSe) solar cell is of excellent development tendency because of lower pollution and outstanding power conversion efficiency(PCE). Yet, current PCE of CZTSSe is limited because of a high open-circuit voltage deficit, primarily put down to severe band tailing and carrier recombination. In this paper, absorber films were obtained by solution method and the influences of different aluminum doping concentrations on the properties of CZTSSe thin film cell were studied. Analysis about X-ray diffraction (XRD) and Raman spectroscopy confirms which Al has incorporated into CZTSSe thin film lattice and replaced Sn. Hall effect measurements reveal the improvement of carrier concentration on thin film absorber layer attribute to the formation of AlSn acceptor defects. Furthermore, X-ray photoelectron spectroscopy (XPS) reveals that Al enter into the CZTSSe lattice and Al is in the appropriate state of + 3 valence without generating additional harmful defects. More important, the generation of deep energy level defects and defect clusters associated with Sn were suppressed by replacing Sn with Al. Finally, the photovoltaic performance of different Al doped CZTSSe cells were characterized by conducting J-V and external quantum efficiency (EQE) tests. Remarkably, the CZTSSe solar cell with PCE as high as 10.59 % is obtained under a doping level of 6 % Al, which has an open circuit voltage of 522 mv. Compared with reference CZTSSe solar cells with an efficiency of 7.29 %, which indicates with improvement of 45 % in efficiency. Consequently, Al doping process is considered as a prospective tactic to elevate the PCE of CZTSSe solar cells.

Upgrading CZTSSe solar cell performance through numerical investigation of Cu-based hole transport layers

A material like CZTSSe, belonging to the Kesterite family, serves as a guiding light for researchers due to its ability to tunable bandgap and exhibit a high optical coefficient exceeding 104 cm−1, crucial for solar cell applications. These characteristics not only render it suitable for single-junction solar cells but also enhance its overall acceptance. Meanwhile, the material Cu2ZnSn(Sx, Se1-x)4 (CZTSSe) has increasingly captivated the attention of researchers owing to its cost-effectiveness, eco-friendliness, high absorption coefficient, and adjustable bandgap. This paper explores the conventional structure of CZTSSe solar cells comprising Al:ZnO/Zn(O,S)/CZTSSe/different Cu-based HTL, underscoring the importance of identifying an optimal HTL. Consequently, a comparative analysis of solar cells with various HTLs is conducted, facilitated by the SCAPS-1D numerical simulation software for property evaluation and efficiency optimization. Furthermore, varying parameters such as absorber layer thickness, defect densities, doping concentrations, and temperature shed light on the responses of open-circuit voltage (VOC), short-circuit current (JSC), fill factor (FF), and efficiency (PCE) of the solar cell. Among different Cu-based HTLs, Cu2O emerges as a promising candidate for maximizing CZTSSe-based solar cell performance. Additionally, the discussion delves into the impacts of layer parameters like thickness, doping density, and carrier concentrations. Following device optimization, considerations extend to operating temperature variations and the effects of series and shunt resistance. Notably, our endeavors culminate in cell performance metrics: efficiency = 30.65 %, short-circuit current density = 42.15 mA/cm2, open-circuit voltage = 0.84 V, and fill factor = 85.60 %.

Using Advanced Micro-to-atomic Scale Characterizations to Explore the Role of Ge in CZTSSe Solar Cells

Using Advanced Micro-to-atomic Scale Characterizations to Explore the Role of Ge in CZTSSe Solar Cells

A high effciency (11.06 %) CZTSSe solar cell achieved by combining Ag doping in absorber and BxCd1-xs/caztsse heterojunction annealing

Many literatures have demonstrated that a smaller amount of Ag doping in Cu2ZnSn(S, Se)4 (CZTSSe) can elevate the open-circuit voltage (Voc) and fill factor (FF) of CZTSSe solar cells, but decrease short-circuit current density (Jsc) due to the increase in bandgap (Eg) of the CAZTSSe by Ag doping. The decreased Jsc limits the enhancement in PCE through Ag doping. In this paper, to compensate for the deficit in Jsc and further increase Voc and FF, a strategy is proposed to substitute CdS/CAZTSSe in CAZTSSe solar cells with annealed B-doped CdS/CAZTSSe. It is found that B doping can increase the electron density of CdS (ne) and decrease the lattice mismatch between CdS and CAZTSSe. Annealing can decrease the hole density of CAZTSSe (np) and passivate the surface of CAZTSSe by diffusing B towards the surface of CAZTSSe. The increased ne and reduced np widen the depletion region, leading to an increase in photogenerated carrier density (JL), resulting in an increase in Jsc. The surface passivation and decreased lattice mismatch can reduce interfacial recombination, resulting in decrease in the reverse saturation current density (J0), so further increases in Voc and FF. By optimizing the Ag doping content, B doping content, as well as the annealing temperature and time of the BxCd1-xS/CAZTSSe, the power conversion efficiency (PCE) increases from 8.96 % to 11.06 %. This study not only advances a deeper understanding of the mechanisms behind various parameters in CZTSSe solar cells but also proposes a method to boost the PCE of CZTSSe solar cells.

Synergistic Crystallization Modulation and Defects Passivation in Kesterite via Anion-Coordinate Precursor Engineering for Efficient Solar Cells.

It has been validated that enhancing crystallinity and passivating the deep-level defect are critical for improving the device performance of kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Coordination chemistry interactions within the Cu-Zn-Sn-S precursor solution play a crucial role in the management of structural defects and the crystallization kinetics of CZTSSe thin films. Therefore, regulating the coordination environment of anion and cation in the precursor solution to control the formation process of precursor films is a major challenge at present. Herein, a synergetic crystallization modulation and defect passivation method is developed using P2S5 as an additive in the CZTS precursor solution to optimize the coordination structure and improve the crystallization process. The alignment of theoretical assessments with experimental observations confirms the ability of the P2S5 molecule to coordinate with the metal cation sites of CZTS precursor films, especially more liable to the Zn2+, effectively passivating the Zn-related defects, thereby significantly reducing the defect density in CZTSSe absorbers. As a result, the device with a power conversion efficiency of 14.36% has been achieved. This work provides an unprecedented strategy for fabricating high-quality thin films by anion-coordinate regulation and a novel route for realizing efficient CZTSSe solar cells.

Improvement of Performance of CZTSSe Solar Cells by the Synergistic Effect of Back Contact Modification and Ag Doping.

To improve the performance of Cu2ZnSn(S,Se)4 solar cells, a strategy is proposed to improve the quality of absorber and back interface simultaneously by substituting V-doped Mo (Mo:V) for a conventional Mo back electrode and incorporating Ag into the Cu2ZnSn(S,Se)4 (ACZTSSe) absorber in this work. Since p+-type V-doped MoSe2 (MoSe2:V) is formed in the site between the absorber and Mo:V during selenization, the conventional Mo/n-MoSe2 back contact is modified to Mo:V/p+-MoSe2:V, a back surface passivation field (BSPF) is established at the back interface, the band bending of MoSe2:V is downward and that of bottom of the absorber is upward. Further investigation reveals that the back contact modification and Ag doping have a synergistic effect on inhibiting carrier recombination, decreasing series resistance and increasing shunt resistance, thereby leading to the PCE of device without antireflection coating increased from 8.61 to 10.98%, which is larger than the sum of increase in PCE induced by Ag doping alone (8.61 to 9.66%) and back contact modification alone (8.61 to 9.63%). It is demonstrated that the synergistic effect stems mainly from the strengthened BSPF and the further reduced back contact barrier height. The former is due to the increased difference in work function (WF) between MoSe2:V and absorber induced by the reduced WF of the absorber after Ag doping and the raised WF of MoSe2:V after V doping. The latter is due to the downshifted valence band maximum of absorber after Ag doping. This work highlights the synergistic effect of back contact modification and Ag doping on improving the performance of CZTSSe solar cells and also provides an effective way to suppress carrier recombination.

Promoting effect of lanthanum doping on photovoltaic performance of CZTSSe solar cells.

A large open-circuit voltage (VOC) deficit is the major challenge hindering the efficiency improvement of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Cation substitution, or doping, is usually an effective strategy to achieve carrier regulation and improve efficiency. In this work, we developed a rare-earth element lanthanum (La) doped CZTSSe thin-film solar cell by directly introducing La3+ ions into the CZTS precursor solution. Such a proposed La doping approach could effectively enhance light harvesting, adjust the bandgap, and increase the electron diffusion length. Furthermore, appropriate concentrations of La doping can reduce harmful defect cluster. Benefiting from the La doping, the VOC significantly increases from 431 to 497 mV. Consequently, the power conversion efficiency is enhanced significantly from 6.54% (VOC = 431 mV, JSC = 25.50 mA/cm2, FF = 58.28%) for the reference cell to 10.21% (VOC = 497 mV, JSC = 35.20 mA/cm2, FF = 58.41%) for the optimized La-doped cell. This research provides a new direction for enhancing the performance of CZTSSe cells, offering promising prospects for the future of CZTSSe thin-film solar cells.

Design and simulation of a new kesterite solar cell structure with and without a perovskite back surface field layer to exceed 32% efficiency

Copper zinc tin sulfide-selenide (CZTSSe) is a promising thin-film material for photovoltaic solar cells due to its abundance, environmentally friendly constituents, direct bandgap, and high optical absorption in visible light. In this study, we used the SCAPS-1D software to investigate the heterojunction CZTSSe/CdS-based solar cell with and without a perovskite back surface field (BSF) layer added between the absorber layer and the Mo back contact. First, a simple structure CZTSSe/CdS-based solar cell without a BSF layer was considered and replicated. Then, by adding p-MAPbI3 as the BSF layer, a new kesterite solar cell structure has been proposed. Different layer parameters, such as the thickness, acceptor density, and the back contact’s work function, were used to compare the performance of both devices, with and without the BSF layer. A negative impact on cell performance was observed as a function of the series resistance. The analyses showed that the CZTSSe solar cell with the BSF achieved a higher efficiency of 32.27% compared to the cell without the BSF, which had an efficiency of 23.26%. The outcomes of this contribution may provide useful research directions for the thin-film photovoltaic field, enabling the production of highly efficient and low-cost CZTSSe-based solar cells.

Impact of oxygen incorporation on interface optimization and defect suppression for efficiency enhancement in Cu2ZnSn(S,Se)4 solar cells

Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells suffer from severe carrier recombination, limiting the photovoltaic performance. Unfavorable energy band alignment at the p-n junction and defective front interface are two main causes. Herein, oxygen incorporation in CZTSSe via absorber air-annealing was developed as a strategy to optimize its surface photoelectric property and reduce the defects. With optimized oxygen incorporation conditions, the carrier separation and collection behavior at the front interface of the device is improved. In particular, it is found that oxygen incorporated absorber exhibits increased band bending, larger depletion region width, and suppressed absorber defects. These indicate the dynamic factors for carrier separation become stronger. Meanwhile, the increased potential difference between grain boundaries and intra grains combined with the decreased concentration of interface deep level defect in the absorber provide a better path for carrier transport. As a consequence, the champion efficiency of CZTSSe solar cells has been improved from 9.74% to 12.04% with significantly improved open-circuit voltage after optimized air-annealing condition. This work provides a new insight for interface engineering to improve the photoelectric conversion efficiency of CZTSSe devices.

Suppressing Element Inhomogeneity Enables 14.9% Efficiency CZTSSe Solar Cells.

Kesterites, Cu2ZnSn(SxSe1- x)4 (CZTSSe), solar cells suffer from severe open-circuit voltage (VOC) loss due to the numerous secondary phases and defects. The prevailing notion attributes this issue to Sn-loss during the selenization. However, this work unveils that, instead of Sn-loss, elemental inhomogeneity caused by Cu-directional diffusion toward Mo(S,Se)2 layer is the critical factor in the formation of secondary phases and defects. This diffusion decreases the Cu/(Zn+Sn) ratio to 53% at the bottom fine-grain layer, increasing the Sn-/Zn-related bulk defects. By suppressing the Cu-directional diffusion with a blocking layer, the crystal quality is effectively improved and the defect density is reduced, leading to a remarkable photovoltaic coversion efficiency (PCE) of 14.9% with a VOC of 576mV and a certified efficiency of 14.6%. The findings provide insights into element inhomogeneity, holding significant potential to advance the development of CZTSSe solar cells.

Ferroelectric BaTiO3 Nanoparticles Embedded at the p–n Heterojunction Interface Improves the Carrier Transport in Kesterite Solar Cells

AbstractThe built‐in field (Ebi) is a key factor for the dynamic of carrier transport in the heterojunction interface, thus determining the photovoltaic performance of the solar cell, such as Cu2ZnSn(S,Se)4 (CZTSSe) cell. It is critical to improve the carriers' transport across the pn heterojunction for the fabrication of highly efficient solar cells. In this work, the large electric field of ferroelectric BaTiO3 nanoparticles (BTO NPs) is used to tailor the carrier transport in the CZTSSe solar cells by embedding BTO NPs into the interface of CZTSSe/CdS heterojunction. It is very surprising that a polarization electric field (EP) with the same direction of Ebi synergically enhances carrier transport greatly and increases the PCE by 20.6%. Further study on the mechanism discloses that BTO NPs reduce the work function of CZTSSe and CdS and form interfacial dipoles at their interface, which is conducive to the photogenerated electrons to be collected by the electron transport layer. This strategy also works well on other thin film solar cells and gives a new aspect of strengthening the carrier transport between p–n heterojunction.