Current-voltage Characteristics Research Articles

Design considerations of CdSe solar cells for indoor applications under white LED illumination

This work sheds light on the potential of Cadmium Selenide (CdSe) solar cells for indoor applications. CdSe boasts a wide direct bandgap, high carrier mobility, and a high absorption coefficient, making it an attractive candidate for harnessing ambient indoor light. Our study centers around an experimental solar cell architecture composed of FTO/CdSe/PEDOT:PSS/CuI/ITO, which exhibits a power conversion efficiency (PCE) of 6.00 %. Through a meticulous analysis of the core technological aspects of this cell, we successfully replicate the measured current-voltage characteristics and other experimental data, affirming the validity of our simulation modeling approach. Moving forward, we delve into the design and optimization of CdSe-based solar cells under white LED illumination. We emphasize the pivotal role of a double-hole transport layer (HTL) configuration over a single HTL, with a focus on optimizing the alignment between the HTL/back contact and HTL/absorber interfaces. The strategic incorporation of a heavily doped p-type HTL material, boasting both a deep valence band maximum (VBM) and a shallow conduction band minimum (CBM), is identified as paramount, especially for a deep VBM absorber like CdSe. Adding double HTL materials also facilitates efficient hole collection within the CdSe thin film while mitigating undesirable electron-hole recombination at the critical interface between the hole collection layer and the electrode. The implementation of a double HTL configuration based on CuI/ZnTe:Cu or CuI/BCS significantly enhances performance, resulting in a PCE in the order of 20 % under 200 lux and 2900 K LED illumination. Moreover, we introduce the single HTL design to provide other alternatives for efficiency boosting. Upon increasing the work function of the front contact, it is found that the valence band offset between the HTL and the absorber can be engineered, resulting in a PCE above 21.5 %.

Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism

Herein, a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells (QWs) is prepared using the Sah−Noyce−Shockley (SNS) recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration. A comparison of the model voltage−current characteristics (VCCs) with the experimental ones reveals their adequacy. The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10 Å. The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.

NiOx Passivation in Perovskite Solar Cells: From Surface Reactivity to Device Performance.

Nonstoichiometric nickel oxide (NiOx) is one of the very few metal oxides successfully used as hole extraction layer in p-i-n type perovskite solar cells (PSCs). Its favorable optoelectronic properties and facile large-scale preparation methods are potentially relevant for future commercialization of PSCs, though currently low operational stability of PSCs is reported when a NiOx hole extraction layer is used in direct contact with the perovskite absorber. Poorly understood degradation reactions at this interface are seen as cause for the inferior stability, and a variety of interface passivation approaches have been shown to be effective in improving the overall solar cell performance. To gain a better understanding of the processes happening at this interface, we systematically passivated specific defects on NiOx with three different categories of organic/inorganic compounds. The effects on NiOx and the perovskite (MAPbI3) deposited on top were investigated using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and scanning electron microscopy (SEM). Here, we find that the perovskite's structural stability and film formation can be significantly affected by the passivation treatment of the NiOx surface. In combination with density functional theory (DFT) calculations, a likely origin of NiOx-perovskite degradation interactions is proposed. The surface passivated NiOx layers were incorporated into MAPbI3-based PSCs, and the influence on device performance and operational stability was investigated by current-voltage (J-V) characterization, impedance spectroscopy (IS), and open circuit voltage decay (OCVD) measurements. Interestingly, we find that a superior structural stability due to interface passivation must not relate to high operational stability. The discrepancy comes from the formation of excess ions at the interface, which negatively impacts all solar cell parameters.

Self‐Selective Crossbar Synapse Array with n‐ZnO/p‐NiOx/n‐ZnO Structure for Neuromorphic Computing

AbstractArtificial synapse devices are essential elements for highly energy‐efficient neuromorphic computing. They are implemented as crossbar array architecture, where highly selective synaptic weight updates for training and sneak leakage‐free inference operations are required. In this study, self‐selective bipolar artificial synapse device is proposed with n‐ZnO/p‐NiOx/n‐ZnO heterojunction, and its analog synapse operation with high selectivity is demonstrated in 32 × 32 crossbar array architecture without the aid of selector devices. The built‐in potential barrier at p‐NiOx/n‐ZnO junction and the Zener tunneling effect provided nonlinear current–voltage characteristics at both voltage polarities for self‐selecting function for synaptic potentiation and depression operations. Voltage‐driven redistribution of oxygen ions inside n–p–n oxide structure, evidenced by x‐ray photoelectron spectroscopy, modulated the distribution of oxygen vacancies in the layers and consequent conductance in an analog manner for the synaptic weight update operation. It demonstrates that the proposed n–p–n oxide device is a promising artificial synapse device implementing self‐selectivity and analog synaptic weight update in a crossbar array architecture for neuromorphic computing.

Antena Tatasusun Grid Lut Sinar dengan Sel Suria Terpeka Pewarna (DSSC)

Wireless communication systems require electrical energy to operate and function. Whereas standalone applications require reliable power sources which can be realised by photovoltaic technology. Typically, photovoltaic cells and antennas are two separate devices. These devices compete for space in mobile or standalone systems, where available space is generally very limited. To address this issue, a combination of an antenna and a solar cell into a single device is needed. Integrating an antenna with a solar cell is challenging due to the importance of maintaining a compact, simple design while achieving optimal efficiency for both elements. This study focuses on designing a transparent grid array antenna integrated with Dye-Sensitized Solar Cells (DSSC) for Ku-band applications. The grid array design aims to improve antenna performance and is chosen for its suitability with the design and structure of the solar antenna device. The integrated antenna and solar cell were simulated using Computer Simulation Technology (CST) software at a frequency of 14 GHz for Ku-band applications. A prototype of the antenna and solar cell was fabricated, then tested and measured for the efficiency of both the antenna and solar elements. For the solar element, performance measurements were conducted using a halide lamp to mimic sunlight, with results presented in the form of current-voltage curves. In summary, by the end of this study, a transparent solar antenna for Ku-band applications was successfully designed with a gain exceeding 10 dBi. The solar cell’s performance showed an open-circuit voltage (V<sub>OC</sub>) of 0.6733 V, a short-circuit current density (J<sub>SC</sub>) of 2.06 mA/cm², a fill factor (f<sub>F</sub>) of 29.31%, and a power conversion efficiency (η) of 0.407%.

Simulation of SnO2/Cs2AgInBr6/CuO heterojunction solar cell using AMPS-1D modeling

Using the one-dimensional computer code AMPS-1D MPS-1D (Analysis of Microelectronic and Photonic Structures), we simulated a lead-free double perovskite cell made of Cs2AgInBr6. This study examines the influence of the thickness and acceptor density of the active layer (Cs2AgInBr6) on key solar cell parameters, including short-circuit current density (JSC), efficiency (Eff), fill factor (FF), open-circuit voltage (VOC), current-voltage characteristics (J-V)). Our results suggest that an optimal active layer thickness of 500 nm yields good performance for the studied solar cell. Furthermore, the ideal acceptor density for enhancing output parameters is in the range of 10¹3-10¹⁵ cm⁻³. Post-optimization, our findings reveal a Voc of 0.969 V, a Jsc of 29.402 mA cm⁻², and an FF of 0.876, resulting in an efficiency of 24.959%. The results from AMPS-1D simulations for a Cs2AgInBr6 lead-free double perovskite solar cell suggest that this material and device structure can achieve high efficiency and good performance characteristics.

Exploring the optical and electrical features of PVA/CMC/PPy/MWCNTs blended polymers

The objective of this study is to create nanocomposite films using polyvinyl alcohol (PVA), sodium carboxymethyl cellulose (CMC), polypyrrole (PPy) and Multi-walled carbon nanotubes (MWCNTs). These nanocomposites show potential for use in a range of optoelectronics devices. The structure and morphology of PVA/CMC/PPy/x wt % MWCNTs blends were explored using X-ray diffraction and scanning electron microscope techniques. In the visible range, the transmittance lowered from 78-87 % (PVA/CMC/PPy blend) to 3-5 % (x=0.25 wt % MWCNTs). The transmittance in the UV range decreased significantly, approaching zero, for the blend containing 0.25 wt % MWCNTs. The material improves the absorption of UV–visible light and efficiently prevents the penetration of UV–visible light. When the concentration of MWCNTs reached 0.05 in the doped blend, the reflectance value improved considerably. The addition of MWCNTs to the PVA/CMC/PPy composite leads to a reduction in the optical bandgap values. The lowest direct and indirect band gaps are (4.98, 4.36) eV and (4.52, 3.19, 2.68, 1.18) eV, respectively, accomplished when the MWCNTs content was 0.2 wt %. A blend containing 0.15 wt % MWCNTs resulted in the highest values of refractive index and nonlinear optical parameters. In the visible light spectrum, the blend with 0.25 wt% MWCNTs had the best optical conductivity values. Doped blends can be used in optoelectronic or photocatalytic applications depended on the amount of MWCNTs doped. The current-voltage characteristics and logarithm of the current density and square root of the electric field strength of PVA/CMC/PPy/x wt % MWCNTs blended polymers at various temperatures were investigated.

Effect of hydrogen treatment on 4H-SiC Schottky barrier diodes

In this letter, 4H-SiC Schottky barrier diodes (SBDs) with Ti Schottky metal have been subjected to hydrogen treatment in a confined environment of 4% H2 and 96% N2 at 150 °C. The effect of hydrogen treatment on the SBDs electrical characteristics has been investigated by technical computer-aided design simulation (TCAD) and power device analyzer curve tracer. The change of electrical parameters of SBDs measured after hydrogen treatment is studied in detail, and the related degradation mechanism is discussed. It was found that hydrogen treatment affected both the interface region and bulk region of SiC SBDs. After hydrogen treatment, the Schottky barrier increases slightly, the ideal factor (n) decreases slightly, and the interfacial state density (D it) decreases. Hydrogen treatment resulted in a slight reduction in specific on-resistance (R on-sp), which was attributed to the diffusion of H in SBDs. Through TCAD simulation, it is determined that the diffusion of H in the body diode of SBDs is the main reason for the degradation of high forward current and high reverse voltage characteristics.

Influence of 700 keV O3+ ion implantation on current transport properties of Cr/p-GaN SBD’s

In the present study we show a detailed investigation into the influence of 700 keV O3+ ion implantation in Cr/p-GaN SBDs on electrical characteristics / current transport properties. Also the damage events along the trajectory of the ion beam were quantitatively estimated through SRIM and TRIM simulations. The Current-voltage (I-V) characteristics were analyzed using different methods such as Cheung and Cheung's method and Norde’s method to obtain different electrical parameters. The values of n and ϕB decrease up to a fluence of 1 × 1014 ions cm−2, and show a fractional increase at a fluence of 1 × 1015 ions cm−2. Further, a drastic increase in values of series resistance (RS ) of SBDs with an increase in fluence was observed. In the forward-bias voltage regions, the Cr/p-GaN SBDs conduction mechanism shows an increasingly ohmic behavior with an increase in fluence, which may be attributed to thermally generated carriers. At low voltage, the reverse current conduction mechanism is due to Poole-Frenkel emission. For the high voltage region, Schottky emission mechanism becomes more prominent. The changes in electrical parameters are closely related to the defect and damage profiles estimated through SRIM/TRIM simulations, which are strongly dependent on the dose of the 700 keV O3+ ion implantation. Additionally, we found that at high doses, the charge transport mechanism changes, with additional defects affecting not only the thermionic emission mechanism but also various current transport mechanisms.

Studies on suppressed surface recombination of InGaN-based red light-emitting diodes with V-pits

InGaN-based red light-emitting diodes (LEDs) are a promising candidate to achieve high efficiency, which is highly desired by the display market. Understanding their size-dependent properties is crucial for further performance improvement. In this work, different sized InGaN red LEDs (from 500 × 500 to 15 × 15 µm2) based on V-pits were characterized systematically. The current–voltage characteristics show that the leakage current density, revealed either in forward or reverse bias, is independent of the chip size. Further light output power measurements and current dependent electroluminescence also reveal very weak dependence of the power density on chip size showing insensitivity the chip perimeter. The suppressed surface recombination effect may be due to effective carrier trapping effect by the V-pits, which prevents the carriers from flowing to the sidewalls. By detailed analysis of the spatially resolved electroluminescence, an anti-correlation between the emission wavelengths and the intensities was observed, with the longer wavelength emitting regions exhibit weaker intensity, which can be explained by the reduced carrier density in the V-pit-rich regions as carriers are partially captured by quantum wells associated with the V-pits and the associated dislocations. This study will pave the way for further understanding and improving the efficiency of InGaN red LEDs including micro-LEDs.

Performance evaluation of superconductor integrated circuit simulators

The development of superconductor integrated circuits (SCIC) places increasing demands on electronic design automation (EDA) tools. Circuit simulation is a crucial step in the design process of superconducting quantum interference devices (SQUID) and single flux quantum (SFQ) circuits. Over the years, there have been many SC circuit simulators, like JSPICE, JSIM, WRspice, JoSIM, PSCAN2, JSICsim, PrimeSim HSPICE, Spectre, and more. The previous studies have compared the differences in results among some simulators for the same circuit cases. However, designers of SC circuits still face challenges when choosing simulators and setting simulation parameters. The performance of these simulators lacks comprehensive and quantitative evaluations to date. To evaluate the performance of the simulators, we focused on three aspects: the differences among the IV results, accuracy, and speed. For characterizing the accuracy of the simulators, we proposed a method that uses the relative error between the numerical and analytical solutions at the L-C resonance point on the IV curve of a dc SQUID. In this article, we have selected five representative simulators JoSIM, JSIM, WRspice, PSCAN2, and JSICsim for our study. By using multiple cases of the bare and coupled dc SQUID, multiple IV curves, and the analytical solution as a reference, we comprehensively compared the performance of these simulators. Additionally, we quantitatively examined the impact of two key simulation parameters, namely, the maximum allowed simulation timestep (max timestep) and relative tolerance (RelTol), on the performance of these simulators. Our results show that the normalized voltage differences in the IV curves of different simulators are relatively small (within 0.06) in regions far from the L-C resonance point, while they increase significantly near the L-C resonance point (maximum is 0.4). PSCAN2 exhibits a significant relative error of approximately 16% when the max timestep is 0.6ps and RelTol is 1×10−1, which is close to its default RelTol value. Our work provides some insights and references for the designers of SC circuits on how to choose simulators and set simulation parameters.

Enhancing simulation feasibility for multi-layer 2D MoS2 RRAM devices: reliability performance learnings from a passive network model.

While two-dimensional (2D) MoS2 has recently shown promise as a material for resistive random-access memory (RRAM) devices due to its demonstrated resistive switching (RS) characteristics, its practical application faces a significant challenge in industry regarding its limited yield and endurance. Our earlier work introduced an effective switching layer model to understand RS behavior in both mono- and multi-layered MoS2. However, functioning as a phenomenological percolation modeling tool, it lacks the capability to accurately simulate the intricate current-voltage (I-V) characteristics of the device, thereby hindering its practical applicability in 2D RRAM research. In contrast to the established conductive filament model for oxide-based RRAM, the RS mechanism in 2D RRAM remains elusive. This paper presents a novel simulator aimed at providing an intuitive, visual representation of the stochastic behaviors involved in the RS process of multi-layer 2D MoS2 RRAM devices. Building upon the previously proposed phenomenological simulator for 2D RRAM, users can now simulate both the I-V characteristics and the resistive switching behaviors of the RRAM devices. Through comparison with experimental data, it was observed that yield and endurance characteristics are linked to defect distributions in MoS2.

Resolving artefacts in voltage-clamp experiments with computational modelling: an application to fast sodium current recordings.

Cellular electrophysiology is the foundation of many fields, from basic science in neurology, cardiology, oncology to safety critical applications for drug safety testing, clinical phenotyping, etc. Patch-clamp voltage clamp is the gold standard technique for studying cellular electrophysiology. Yet, the quality of these experiments is not always transparent, which may lead to erroneous conclusions for studies and applications. Here, we have developed a new computational approach that allows us to explain and predict the experimental artefacts in voltage-clamp experiments. The computational model captures the experimental procedure and its inadequacies, including: voltage offset, series resistance, membrane capacitance and (imperfect) amplifier compensations, such as series resistance compensation and supercharging. The computational model was validated through a series of electrical model cell experiments. Using this computational approach, the artefacts in voltage-clamp experiments of cardiac fast sodium current, one of the most challenging currents to voltage clamp, were able to be resolved and explained through coupling the observed current and the simulated membrane voltage, including some typically observed shifts and delays in the recorded currents. We further demonstrated that the typical way of averaging data for current-voltage relationships would lead to biases in the peak current and shifts in the peak voltage, and such biases can be in the same order of magnitude as those differences reported for disease-causing mutations. Therefore, the presented new computational pipeline will provide a new standard of assessing the voltage-clamp experiments and interpreting the experimental data, which may be able to rectify and provide a better understanding of ion channel mutations and other related applications.

Sustainable Mixed-Halide Perovskite Resistive Switching Memories Using Self-Assembled Monolayers as the Bottom Contact.

The complex ionic-electronic conduction in mixed halide perovskites enables their use beyond von Neumann architectures implemented in resistive switching memory devices. Although device fabrication based on perovskite compounds involves solution-processing at low temperatures, reducing further fabrication costs by eliminating expensive materials can improve their compatibility with upscalable deposition techniques. Notably, the substrate on which the perovskite active layer is developed has been reported to severely affect its quality and thus the overall device performance. Hereby, we demonstrate the sustainable manufacturing of memristive perovskite solar cells by replacing the expensive poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) that serves as a hole transporting layer (HTL) with a self-assembled monolayer (SAM), namely [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid (MeO-2PACz). Multiple sequential memristive current-voltage characteristics of single devices are reported, and average data of multiple reference and targeted devices are compared. Resistive switching memory devices based on SAM exhibit improved performance having reduced average SET voltage values and narrower statistical variation compared to reference devices with PTAA. It is shown that both PTAA and SAM based devices exhibit high ON/OFF ratio of about 103 operating at low switching electric fields. Replacing an expensive polymer-based HTL with this approach reduces fabrication costs compared to PTAA.

Peculiarities of Electric and Dielectric Behavior of Ni- or Fe-Doped ZnO Thin Films Deposited by Atomic Layer Deposition.

The physical properties of ZnO can be tuned efficiently and controllably by doping with the proper element. Doping of ZnO thin films with 3D transition metals that have unpaired electron spins (e.g., Fe, Co, Ni, etc.) is of particular interest as it may enable magnetic phenomena in the layers. Atomic layer deposition (ALD) is the most advanced technique, which ensures high accuracy throughout the deposition process, producing uniform films with controllable composition and thickness, forming smooth and sharp interfaces. In this work, ALD was used to prepare Ni- or Fe-doped ZnO thin films. The dielectric and electrical properties of the films were studied by measuring the standard current-voltage (I-V), capacitance-voltage (C-V), and capacitance-frequency (C-f) characteristics at different temperatures. Spectral ellipsometry was used to assess the optical bandgap of the layers. We established that the dopant strongly affects the electric and dielectric behavior of the layers. The results provide evidence that different polarization mechanisms dominate the dielectric response of Ni- and Fe-doped films.

Impact of Solvent Electrostatic Environment on Molecular Junctions Probed via Electrochemical Impedance Spectroscopy.

The electrostatic environment around nanoscale molecular junctions modulates charge transport; solvents alter this environment. Methods to directly probe solvent effects require correlating measurements of the local electrostatic environment with charge transport across the metal-molecule-metal junction. Here, we measure the conductance and current-voltage characteristics of molecular wires using a scanning tunneling microscope-break junction (STM-BJ) setup in two commonly used solvents. Our results show that the solvent environment induces shifts in molecular conductance, which we quantify, but more importantly we find that the solvent also impacts the magnitude of current rectification in molecular junctions. By incorporating electrochemical impedance spectroscopy into the STM-BJ setup, we measure the capacitance of the dipole layer formed at the metal-solvent interface and show that rectification can be correlated with solvent capacitance. These results provide a method of quantifying the impact of the solvent environment and a path toward improved environmental control of molecular devices.

Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter

A set of transfer and output current-voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region has been calculated. It is shown that the presence of a superlattice in the tr ansistor structure leads to the fo rmation of a negative differential conductivity region, which makes it possible to implement not only amplification, but also the generation and multiplication of high-frequency oscillations.

Direct ESI-MS of Ionic Liquids Using High-Pressure Electrospray From Large-Bore Emitters Made of Micropipette Tips.

Electrospray ionization mass spectrometry of neat undiluted ionic liquid (IL) and the analysis of protein with the doping of IL were performed using high-pressure electrospray. The use of disposable micropipette tips as emitters eased the handling of viscous and easy-to-clog samples and improved the reproducibility of the measurement. A high-pressure operation enabled the stable electrospray of the highly conductive IL from these relatively large bore emitters. The measurement of the current-voltage relationship of 1-ethyl-3-methylimidazolium tetrafluoroborate (Emim BF4) revealed an unusual negative differential resistance that has not been seen in the typical atmospheric or high-pressure electrospray. Mass spectrometric analysis of this IL also showed the characteristic response of various ion species with the emitter voltage. When added to the commonly used protein solution, the mass spectrum also showed protein peaks that correspond to the adduction of fluoroboric acid molecules (HBF4).

High-Performance Broadband Self-Driven Photodetector Based on MoS2/Cs2CuBr4 Heterojunction.

Few-layer transition metal dichalcogenides and perovskites are both promising materials in high-performance optoelectronic devices. Here, we developed a self-driven photodetector by creating a heterojunction between few-layer MoS2 and lead-free perovskite Cs2CuBr4. The detector shows a unique property of very high sensitivity in a broad spectral range of 400 to 800 nm with response speed in a millisecond order. Current-voltage characteristics of the heterojunction device show rectifying behavior, in contrast to the ohmic behavior of the MoS2-based device. The rectifying behavior is attributed to the type II band alignment of the MoS2/Cs2CuBr4 heterojunction. The device shows a broadband (400 to 800 nm) photodetection with very high responsivity reaching up to 2.8 × 104 A/W and detectivity of 1.6 × 1011 Jones at a bias voltage of 3 V. The detector can also operate in self-bias mode with sufficient response. The photocurrent, photoresponsivity, detectivity, and external quantum efficiency of the device are found to be dependent on the illumination power density. The response time of the device is found to be ∼32 and ∼79 ms during the rise and fall of the photocurrent. The work proposes a MoS2/Cs2CuBr4 heterostructure to be a promising candidate for cost-effective, high-performance photodetector.

WS2 Nanotube Transistor for Photodetection and Optoelectronic Memory Applications.

Nanotube and nanowire transistors hold great promises for future electronic and optoelectronic devices owing to their downscaling possibilities. In this work, a single multi-walled tungsten disulfide (WS2) nanotube is utilized as the channel of a back-gated field-effect transistor. The device exhibits a p-type behavior in ambient conditions, with a hole mobility µp ≈ 1.4 cm2V-1s-1 and a subthreshold swing SS ≈ 10 V dec-1. Current-voltage characterization at different temperatures reveals that the device presents two slightly different asymmetric Schottky barriers at drain and source contacts. Self-powered photoconduction driven by the photovoltaic effect is demonstrated, and a photoresponsivity R ≈ 10 mAW-1 at 2V drain bias and room temperature. Moreover, the transistor is tested for data storage applications. A two-state memory is reported, where positive and negative gate pulses drive the switching between two different current states, separated by a window of 130%. Finally, gate and light pulses are combined to demonstrate an optoelectronic memory with four well-separated states. The results herein presented are promising for data storage, Boolean logic, and neural network applications.