Current Reactive Magnetron Sputtering Method Research Articles

Retraction Note to: Structural and electrochemical impedance spectroscopic studies on reactive magnetron sputtered titanium oxynitride (TiON) thin films

Titanium oxynitride films were deposited onto commercially pure titanium substrates by direct current reactive magnetron sputtering method using Ti targets and an Ar–N2–O2 mixture discharge gas. The X-ray photoelectron spectroscopy survey spectra on the etched surfaces of TiON films exhibited the characteristic Ti 2p, N 1s, and O 1s peaks at the corresponding binding energies 454.5, 397.0, and 530.7 eV, respectively. The surface topography of these coatings was studied using atomic force microscopy. The characteristic Raman peaks at 200 and 641 cm−1 for the TiN bonds and at 148, 398 ,and 518 cm−1 for the TiO2 bonds were observed from the Laser Raman spectrometer. The potentiodynamic polarization studies in simulated bodily fluid were performed and the results are reported in this article.

Impact of nitrogen reactive gas and substrate temperature on the optical, electrical and structural properties of sputtered TiN thin films

This work was aimed to study the influence of nitrogen reactive gas and substrate temperature, on the crystalline structure, morphology, sheet resistance and optical properties of titanium nitride thin films. The samples were deposited on glass substrates by the direct current reactive magnetron sputtering method and were controlled to have thicknesses of 150 nanometer (nm). The crystal structures of the samples were checked using the X-ray diffraction technique. The average crystallite size was calculated by using the Scherrer equation. Atomic Force Microscopy was performed on all samples to investigate any change in the crystallite sizes, morphology and also in the roughness of the film’s surface. With the variation in substrate temperature, the optical properties (refractive index, optical band gap and extinction coefficient) of films also changed. The experimental reflectance and absorption spectra of the samples have been characterized by spectrophotometer measurements. Optical band-gap values decrease from 4.01 eV at 300 °C to 3.59 eV at 500 °C. Optical refractive index (n) and extinction coefficient (k) are strongly dependent on the flow rate of nitrogen and substrate temperature. Furthermore, the sheet resistance of the TiN samples are dependent on the investigated deposition parameters. The high reflectance, good morphology, improved crystallinity and low sheet resistance maintained by the films, made them very favorable to be used in both optical and electronic applications, and also as protective and decorative coatings.

RETRACTED ARTICLE: Structural and electrochemical impedance spectroscopic studies on reactive magnetron sputtered titanium oxynitride (TiON) thin films

Titanium oxynitride films were deposited onto commercially pure titanium substrates by direct current reactive magnetron sputtering method using Ti targets and an Ar–N2–O2 mixture discharge gas. The X-ray photoelectron spectroscopy survey spectra on the etched surfaces of TiON films exhibited the characteristic Ti 2p, N 1s, and O 1s peaks at the corresponding binding energies 454.5, 397.0, and 530.7 eV, respectively. The surface topography of these coatings was studied using atomic force microscopy. The characteristic Raman peaks at 200 and 641 cm−1 for the TiN bonds and at 148, 398 ,and 518 cm−1 for the TiO2 bonds were observed from the Laser Raman spectrometer. The potentiodynamic polarization studies in simulated bodily fluid were performed and the results are reported in this article.

Preparation and characterization of p-type semiconducting tin oxide thin film gas sensors

P-type conducting undoped tin oxide thin film gas sensor is fabricated by direct current reactive magnetron sputtering method and calcination technique. Physical characteristics of the undoped tin oxide thin films have been analyzed by Spectroscopic ellipsometer, x-ray diffraction (XRD), scanning electronic microscope, and atomic force microscopy. According to the ethanol sensitivity properties of the sensors, we find that the calcination temperature and the thickness of the films are correlated with the special p-type conducting type; the p-type ultrathin film (10 nm) gas sensor shows better gas sensitivity and less baseline shift. XRD studies indicate that the preferred unidentified diffraction peak at 33.082° favors the formation of p-type conducting. When the intensities of unidentified diffraction peak increases, the gas sensing properties is largely promoted. The response time of the p-type sensor is less than 1 s to 1000 ppm ethanol.

Terahertz transmission properties of transparent conducting molybdenum-doped ZnO films

With direct current reactive magnetron sputtering method，transparent conducting molybdenum-doped ZnO （ZMO） thin films with different carrier concentration on glass substrate were fabricated by monitoring oxygen partial pressure. The dielectric responses of the ZMO films are characterized with terahertz time-domain spectroscopy. Frequency dependent conductivity，power absorption，and refractive index are obtained，and the experimental results can be well reproduced with classic Drude model. Our results reveal that，by adjusting the carrier concentration of ZMO film，the conducting ZMO film can serve as broadband antireflection coatings for substrates and optics in terahertz frequency range.

Low temperature fabrication of VOx thin films for uncooled IR detectors by direct current reactive magnetron sputtering method

Vanadium oxide films have been fabricated on Si3N4-film-coated silicon substrates by direct current reactive magnetron sputtering method. Conditions of deposition are optimized making use of parameters such as sputtering time, dc power, oxygen partial pressure and substrate temperature. X-ray diffraction indicates that the film is a mixture of VO2, V2O3, and V3O5. Four-probe measurement shows that the VOx thin film owns high temperature coefficient of resistance (TCR ∼−2.05%/°C) and suitable square resistance 18.40kΩ/□ (measured at 25°C), indicating it is a well candidate material for uncooled IR detectors. In addition, IR absorption in the wavelength of 2–16μm has been characterized. It is worth noting that the films are sputtered at a relatively low temperature of 210°C in a controlled Ar/O2 atmosphere. Compared to traditional craft, this method needs no post-anneal at high temperature (400–500°C).

Structural and photoluminescent properties of ternary Zn 1− xCd xO crystal films grown on Si(1 1 1) substrates

The ternary Zn 1− x Cd x O (0⩽ x⩽0.6) alloying films with highly c-axis orientation have been deposited on Si(1 1 1) substrates by direct current reactive magnetron sputtering method. X-ray diffraction measurement indicates that the wurtzite-type structure of ZnO can be stabilized up to nominal Cd content x∼0.6 without cubic CdO phase separation. The lattice parameter c of Zn 1− x Cd x O increases almost linearly from 5.229 Å ( x=0) to 5.247 Å ( x=0.6), indicating that Cd substitution takes place on the Zn lattice sites. The photoluminescence spectra of the Zn 1− x Cd x O thin films measured at 12 K display a substantial red shift (∼0.3 eV) in the near-band-edges (NBEs) emission of ZnO: from 3.30 eV of ZnO to 3.00 eV of Zn 0.4Cd 0.6O. The direct modulation of band gap caused by Zn/Cd substitution is responsible for the red shift effect in NBE emission of ZnO.