Current-perpendicular-to-plane Giant Magnetoresistance Device Research Articles

Heavy‐Metal‐Free, Low‐Damping, and Non‐Interface Perpendicular Fe16N2 Thin Film and Magnetoresistance Device

Realization of sub‐10 nm spin‐based logic and memory devices relies on the development of magnetic materials with perpendicular magnetic anisotropy that can provide low switching current and large thermal stability simultaneously. In this work, the authors report on one promising candidate, Fe16N2, a heavy‐metal‐free, non‐interface perpendicular magnetic material and demonstrate a perpendicularly magnetized current‐perpendicular‐to‐plane (CPP) giant magnetoresistance (GMR) device based on Fe16N2. The crystalline‐based perpendicular anisotropy of Fe16N2 in the CPP GMR device is measured to be about 1.9 × 106 J m−3 (1.9 × 107 erg cm−3), which is sufficient to maintain the thermal stability of sub‐10 nm devices. A first principle calculation is performed to support this large magnitude of the perpendicular anisotropy. Moreover, the Gilbert damping constant of the Fe16N2 thin film (α ≈0.01) measured by ferromagnetic resonance (FMR) is lower than for most existing materials with crystalline perpendicular magnetic anisotropy. The non‐interface perpendicular anisotropy and low damping properties of Fe16N2 may offer a pathway for future spintronics logic and memory devices.

High magnetic field sensitivity in anti-ferromagnetically coupled 001-epitaxial [Co2Fe(Al0.5Si0.5)/Ag]N multilayers

We have investigated the effects of the number of repetition (N) of ferromagnetic/nonmagnetic bilayers on the magnetic property and current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) in [Co2Fe(Al0.5Si0.5) (CFAS)/Ag]N multilayer for a potential magnetic field sensor application. The antiferromagnetic interlayer exchange coupling (AFM-IEC) between CFAS layers through the Ag(2.1 nm) spacer realized an anti-parallel magnetization configuration between the adjacent CFAS layers with N up to 6, which led to the stable linear response of magnetoresistance (MR) against a magnetic field in the range of 60-70 mT. The resistance change-area product (ΔRA) and the MR ratio were monotonically increased with N from 6.6 mΩ μm2 and 16% for N = 1 (CFAS/Ag/CFAS trilayer) to 23 mΩ μm2 and 43% for N = 6, respectively, giving an enhancement of field sensitivity with N up to 4.5%/mT. We also found nearly 3 times smaller non-linearity (1.2% Full Scale) in the device with N = 6 compared to that with N = 1. This study suggests a potential of Heusler-alloy based multilayer CPP-GMR device having AFM-IEC for magnetic field sensor applications.

Optimization of half-Heusler PtMnSb alloy films for spintronic device applications

Half-Heusler PtMnSb alloy films were optimized with varying deposition temperatures on Cr/Ag-buffered MgO(0 0 1) substrates by investigating structural and magnetic properties. Epitaxial growth was achieved in PtMnSb films grown at 200 °C while high magnetization of 530 emu cm−3 was observed at 500 °C. Compared to other Heusler alloys, the PtMnSb films show relatively large anisotropic magnetoresistance ratios with negative sign, which could be attributed to high spin–orbit interaction in the PtMnSb films owing to Pt. Furthermore, current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices as a kind of representative spintronic devices were fabricated with the structure of PtMnSb/Ag/PtMnSb. Room-temperature CPP-GMR effect was first observed in the PtMnSb-based CPP-GMR devices.

Size dependence of vortex-type spin torque oscillation in a Co2Fe0.4Mn0.6Si Heusler alloy disk

This paper reports the systematic investigation of vortex-type spin torque oscillation in circular disks of highly spin-polarized Co2Fe0.4Mn0.6Si (CFMS) Heusler alloys. We fabricated the current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with various disk diameters (D) using the layer stack of CFMS/Ag3Mg/CFMS. The gyrotropic motion of the vortex core was successfully excited for the CFMS circular disks with 0.2 µm ⩽ D ⩽ 0.3 µm. The CPP-GMR device with D = 0.2 µm exhibited the Q factor of more than 5000 and the large output power of 0.4 nW owing to the high coherency of vortex dynamics and the high spin-polarization of CFMS. However, the Q factor was remarkably decreased as D was reduced from 0.2 µm to 0.14 µm. The comparison with the calculated resonance frequencies suggested that this degradation of the Q factor was due to the transition of the oscillation mode from the vortex mode to other modes such as the low-coherent out-of-plane precession mode. The present experimental results also suggest that there exists an adequate disk size for the enhanced Q factor of the vortex-type spin torque oscillation.

Damping constant measurement and inverse giant magnetoresistance in spintronic devices with Fe4N

Fe4N is one of the attractive materials for spintronic devices due to its large spin asymmetric conductance and negative spin polarization at the Fermi level. We have successfully deposited Fe4N thin film with (001) out-of-plane orientation using a DC facing-target-sputtering system. A Fe(001)/Ag(001) composite buffer layer is selected to improve the (001) orientation of the Fe4N thin film. The N2 partial pressure during sputtering is optimized to promote the formation of Fe4N phase. Moreover, we have measured the ferromagnetic resonance (FMR) of the (001) oriented Fe4N thin film using coplanar waveguides and microwave excitation. The resonant fields are tested under different microwave excitation frequencies, and the experimental results match well with the Kittel formula. The Gilbert damping constant of Fe4N is determined to be α = 0.021±0.02. We have also fabricated and characterized the current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) device with Fe4N/Ag/Fe sandwich. Inverse giant magnetoresistance is observed in the CPP GMR device, which suggests that the spin polarization of Fe4N and Fe4N/Ag interface is negative.

Investigation of spin-dependent transports and microstructure in NiMnSb-based magnetoresistive devices

We have fabricated fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices using C1b-half Heusler compound NiMnSb, the first candidate of the half-metallic material, as the electrode with a Ag spacer. The device shows magnetoresistance ratios of 25% at 4.2 K and 9.6% at 290 K, which are one of the highest values for the CPP-GMR with half-Heusler compounds. However, these values are much lower compared to those reported for CPP-GMR devices with L21-full Heusler compounds. Careful analysis of the microstructure using scanning transmission electron microscopy and energy dispersive spectroscopy through the upper NiMnSb/Ag interface indicates the heterogeneous formation of Ag-rich solid solution or the island growth of Ag on top of NiMnSb, which clarified a difficulty in evaluating an intrinsic spin-polarization in NiMnSb from CPP-GMR devices. Thus, to evaluate a spin-polarization of a NiMnSb thin film, we fabricated non-local spin valve (NLSV) devices using NiMnSb with Cu channel wires, which is free from the diffusion of Cu to NiMnSb because of no annealing proccess after deposition of Cu. Finally, intrinsic spin polarization of the NiMnSb single layer was extrapolated to be around 50% from NLSV, suggesting a difficulty in obtaining half-metallic nature in the NiMnSb epitaxial thin film.

Current perpendicular-to-plane giant magnetoresistance devices using half-metallic Co2Fe0.4Mn0.6Si electrodes and a Ag–Mg spacer

Current perpendicular-to-plane (CPP) giant magnetoresistance (GMR) effects in devices including Co2Fe0.4Mn0.6Si (CFMS)/Ag100−xMgx/CFMS structures were investigated theoretically and experimentally.First-principles transport calculation revealed that the Fermi surface matching between CFMS and L12 Ag3Mg is better than that between CFMS and fcc-Ag. In the experiments the Mg composition, x was changed from 0 to 26 at.%, in which both face centered cubic phase and L12 phase of Ag–Mg alloys are included depending on the Mg composition. It was confirmed by a cross-sectional high-angle annular dark field scanning transmission electron microscope (HAADF-STEM) image that the Ag–Mg spacer layer with L12 ordered phase was successfully fabricated for x = 22 at.%. The maximum CPP–GMR ratio and the change of the areal resistance () were 56% and 20 mm2, respectively, for x = 22 at.% at room temperature, which is much higher than that of the conventionally used pure Ag spacer devices. It was suggested from the HAADF-STEM images and the results of the temperature dependence of CPP–GMR effects that the diffusion of Mn atoms occurred less at the CFMS/Ag–Mg interfaces for the L12 ordered Ag–Mg spacer devices than the Ag spacer devices, which might be a key factor for the enhancement of the value. The newly developed L12 Ag–Mg spacer is a promising material for realizing large of the CPP–GMR devices.

Enhanced current-perpendicular-to-plane giant magnetoresistance effect in half-metallic NiMnSb based nanojunctions with multiple Ag spacers

Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) heterostructure devices using half-metallic NiMnSb Heusler alloy electrodes with single, dual, and triple Ag spacers were fabricated. The NiMnSb alloy films and Ag spacers show (001) epitaxial growth in all CPP-GMR multilayer structures. The dual-spacer CPP-GMR nanojunction exhibited an enhanced CPP-GMR ratio of 11% (a change in the resistance-area product, ΔRA, of 3.9 mΩ μm2) at room temperature, which is approximately twice (thrice) of 6% (1.3 mΩ μm2) in the single-spacer device. The enhancement of the CPP-GMR effects in the dual-spacer devices could be attributed to improved interfacial spin asymmetry. Moreover, it was observed that the CPP-GMR ratios increased monotonically as the temperatures decreased. At 4.2 K, a CPP-GMR ratio of 41% (ΔRA = 10.5 mΩ μm2) was achieved in the dual-spacer CPP-GMR device. This work indicates that multispacer structures provide an efficient enhancement of CPP-GMR effects in half-metallic material-based CPP-GMR systems.

Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer.

Remarkable magnetic and spin-dependent transport properties arise from well-designed spintronic materials and heterostructures. Half-metallic Heusler alloys with high spin polarization exhibit properties that are particularly advantageous for the development of high-performance spintronic devices. Here, we report fully (001)-epitaxial growth of a high-quality half-metallic NiMnSb half-Heusler alloy films, and their application to current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with Ag spacer layers. Fully (001)-oriented NiMnSb epitaxial films with very flat surface and high magnetization were prepared on Cr/Ag-buffered MgO(001) single crystalline substrates by changing the substrate temperature. Epitaxial CPP-GMR devices using the NiMnSb films and a Ag spacer were fabricated, and room-temperature (RT) CPP-GMR ratios for the C1b-type half-Heusler alloy were determined for the first time. A CPP-GMR ratio of 8% (21%) at RT (4.2 K) was achieved in the fully epitaxial NiMnSb/Ag/NiMnSb structures. Furthermore, negative anisotropic magnetoresistance (AMR) ratio and small discrepancy of the AMR amplitudes between RT and 10 K were observed in a single epitaxial NiMnSb film, indicating robust bulk half metallicity against thermal fluctuation in the half-Heusler compound. The modest CPP-GMR ratios could be attributed to interface effects between NiMnSb and Ag. This work provides a pathway for engineering a new class of ordered alloy materials with particular emphasis on spintronics.

Polycrystalline CPP-GMR Pseudospin Valves Using <inline-formula> <tex-math notation="LaTeX">$\langle {001}\rangle $ </tex-math></inline-formula> Textured Co<sub>2</sub>Fe(Ga<sub>0.5</sub>Ge<sub>0.5</sub>) Layer Grown on a Conductive (Mg<sub>0.5</sub>Ti<sub>0.5</sub>)O Buffer Layer

We report the magnetotransport properties and the microstructure of polycrystalline current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudospin valves (PSVs) using $\langle 001\rangle $ textured Co2Fe(Ga0.5Ge0.5) (CFGG) ferromagnetic layers grown on a conductive (Mg0.5Ti0.5)O (MTO) buffer layer. The PSV with a 10 nm CFGG on 2 nm MTO buffer layers annealed at 400 °C shows a resistance change–area ( $\Delta RA$ ) product of 6.6 $\text{m}\Omega ~\mu \text{m}^{2}$ . Interfacial roughness of the PSV multilayer has been substantially reduced (0.2 nm) compared with those of our previously reported MgO-buffered CFGG/Ag/CFGG PSVs. A relatively large magnetoresistance output and favorable interfacial smoothness make MTO a promising choice to fabricate a $\langle 001\rangle $ textured Heusler-alloy-based CPP-GMR device.

Enhancement of current-perpendicular-to-plane giant magnetoresistance in Heusler-alloy based pseudo spin valves by using a CuZn spacer layer

Enhancement of magnetoresistance output was attained in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices by using a bcc CuZn alloy for the spacer. Pseudo spin valves that consisted of the Co2Fe(Ga0.5Ge0.5) Heusler alloy for ferromagnetic layers and CuZn alloy with the composition of Cu52.4Zn47.6 for a spacer showed the large change of the resistance-area products, ΔRA, up to 8 mΩ·μm2 for a low annealing temperature of 350 °C. The ΔRA value is one of the highest reported so far for the CPP-GMR devices for the low annealing temperature, which is essential for processing read heads for hard disk drives. We consider that the enhancement of ΔRA is produced from the spin-dependent resistance at the Co2Fe(Ga0.5Ge0.5)/CuZn interfaces.

Crystal orientation dependence of band matching in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co2Fe(Ge0.5Ga0.5) Heusler alloy and NiAl spacer

We have experimentally investigated the crystal orientation dependence of band matching in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo-spin-valves using Co2Fe(Ge0.5Ga0.5) (CFGG) Heusler alloy ferromagnetic layer and NiAl spacer. The high quality epitaxial CFGG/NiAl/CFGG all-B2-trilayers structure devices were fabricated on both MgO(001) and sapphire (112¯0) single crystal substrates to create (001) and (110) crystal orientations. Same magneto-transport properties were observed from these two differently orientated devices indicating that there is no or little orientation dependence of band matching on MR output. We also found that all-B2-trilayer structure was free of lattice matching influence depending on the crystal orientation, which made it a good candidate for CPP-GMR device.

Spin Transfer Switching and MR Properties of Co/Pt Multilayered Free Layers for Submicron Sized Magneto-Optical Light Modulation Device

Co/Pt multilayered films show strong perpendicular magnetic anisotropy and have a large magneto-optical Kerr effect in the short wavelength side. To use these films with submicron spatial light modulators driven by spin transfer switching (STS), we fabricated current perpendicular to plane giant magnetoresistance (CPP-GMR) and tunnel magnetoresistance (TMR) devices with Co/Pt multilayers for free layers and investigated the MR properties, the STS characteristics, and the Kerr effects. A Kerr hysteresis loop was clearly observed in the CPP-GMR device, which was 125 × 180 nm2. Full magnetization reversal of the Co/Pt multilayered film by spin transfer torque was demonstrated for a CPP-GMR device with a Cu-based top electrode. On the other hand, there was hardly any resistance change in a CPP-GMR with a transparent top electrode due to the low MR ratio of the device. A TMR stack with a Ag buffer layer showed a strong perpendicular magnetic anisotropy. An MR curve was detected for a TMR device with a transparent top electrode.

Bulk and interfacial scatterings in current-perpendicular-to-plane giant magnetoresistance with Co2Fe(Al0.5Si0.5) Heusler alloy layers and Ag spacer

We report the transport properties of a current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) device with Co2Fe(Al0.5Si0.5) (CFAS) Heusler alloy ferromagnetic layers and a Ag spacer layer. The CPP-GMR devices showed relatively high ΔRA values and MR ratios up to 17 m Ω μm2 and 80% at 14 K, and 8 m Ω μm2 and 34% at 290 K. The spin diffusion length ∼3 nm and the bulk spin asymmetry ∼0.77 for the CFAS alloy at 14 K were estimated by the Valet–Fert model, indicating a large contribution of the interfacial scattering.

Current-perpendicular-to-plane giant magnetoresistance in spin-valve structures using epitaxial Co2FeAl0.5Si0.5/Ag/Co2FeAl0.5Si0.5 trilayers

A current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) spin valve using epitaxial layers of Co2FeAl0.5Si0.5 (CFAS) Heusler alloy as ferromagnetic electrodes is reported. A multilayer stack of Cr/Ag/CFAS/Ag/CFAS/Co75Fe25/Ir22Mn78/Ru was deposited on a MgO (001) single crystal substrate. Epitaxial growth of the Cr, Ag, and CFAS layers in the (001) orientation up to the top CFAS layer was confirmed. Large MR ratios of 6.9% at room temperature and 14% at 6 K were observed for the CPP-GMR device. High spin polarization of epitaxial CFAS is the possible reason for high MR ratios.

Spin transfer switching in the nanosecond regime for CoFeB/MgO/CoFeB ferromagnetic tunnel junctions

Detailed spin transfer switching properties in the nanosecond region for CoFeB/MgO(001)/CoFeB magnetic tunnel junctions are reported. The switching current (IC) was greatly increased in the <10 ns region. This characteristic resembles that of current-perpendicular-to-plane giant magnetoresistance (CPP-GMR), although both the junction geometry and resistance differ from those of a CPP-GMR device. We discussed the switching properties considering the contribution of high frequency loss and the theoretical limitation of the analytical model. Furthermore, we observed real-time switching in the nanosecond region. Using these results, we discuss the spin transfer switching mechanism in the nanosecond region with both adiabatic and thermally activated models.