Current-carrying Molecular Junctions Research Articles

Joule Heating in Single-Molecule Point Contacts Studied by Tip-Enhanced Raman Spectroscopy.

Heating and cooling in current-carrying molecular junctions is a crucial issue in molecular electronics. The microscopic mechanism involves complex factors such as energy inputs, molecular properties, electrode materials, and molecule-electrode coupling. To gain an in-depth understanding, it is a desired experiment to assess vibrational population that represents the energy distribution stored within the molecule. Here, we demonstrate the direct observation of vibrational heating in a single C60 molecule by means of tip-enhanced Raman spectroscopy (TERS). The heating of respective vibrational modes is monitored by anti-Stokes Raman scattering in the TERS spectra. The precise control of the gap distance in the single-molecule junction allows us to reveal a qualitatively different heating mechanism in distinct electron transport regimes, namely, the tunneling and single-molecule point contact (SMPC) regimes. Strong Joule heating via inelastic electron-vibration scattering occurs in the SMPC regime, whereas optical heating is predominant in the tunneling regime. The strong Joule heating at the SMPC also leads to a pronounced red shift of the Raman peak position and line width broadening. Furthermore, by examining the SMPC with several types of contact surfaces, we show that the heating efficiency is related to the current density at the SMPC and the vibrational dissipation channels into the electrode.

Charge Transfer-Mediated Dramatic Enhancement of Raman Scattering upon Molecular Point Contact Formation.

Charge-transfer enhancement of Raman scattering plays a crucial role in current-carrying molecular junctions. However, the microscopic mechanism of light scattering in such nonequilibrium systems is still imperfectly understood. Here, using low-temperature tip-enhanced Raman spectroscopy (TERS), we investigate how Raman scattering evolves as a function of the gap distance in the single C60-molecule junction consisting of an Ag tip and various metal surfaces. Precise gap-distance control allows the examination of two distinct transport regimes, namely tunneling regime and molecular point contact (MPC). Simultaneous measurement of TERS and the electric current in scanning tunneling microscopy shows that the MPC formation results in dramatic Raman enhancement that enables one to observe the vibrations undetectable in the tunneling regime. This enhancement is found to commonly occur not only for coinage but also transition metal substrates. We suggest that the characteristic enhancement upon the MPC formation is rationalized by charge-transfer excitation.

Probing energy dissipation in molecular-scale junctions via surface enhanced Raman spectroscopy: vibrational pumping and hot carrier enhanced light emission

Experimentally resolving the microscopic energy dissipation and redistribution pathways in a molecular-scale junction, the smallest possible nanoelectronic device, is of great current interest. Here we report measurements of the vibrational pumping and light emission processes in current-carrying molecular junctions using surface enhanced Raman spectroscopy. We show that the heating of vibrational modes exhibits distinct features when the molecular junctions are driven by electrical bias or optical power. We further discuss the hot carrier origin of the broadband continuum emission observed in the Raman scattering spectrum.

Nonthermal vibrations in biased molecular junctions.

We study vibrational statistics in current-carrying model molecular junctions using a master equation approach. In particular, we concentrate on the validity of using an effective temperature T_{eff} to characterize the nonequilibrium steady state of a vibrational mode. We identify cases in which a single T_{eff} cannot fully describe one vibrational state. In such cases, the probability distribution among different vibrational states does not follow the Boltzmann type. Consequently, the actual entropy (free energy) of the vibrational mode is lower (higher) than the corresponding thermal value given by T_{eff}, indicating extra work can be extracted from these states. Our results will be useful for the study of a nonthermal vibrational state in the thermodynamics of nanoscale systems, and its usage in nanoscale heat engines.

Sharp Negative Differential Resistance from Vibrational Mode Softening in Molecular Junctions.

We unravel the critical role of vibrational mode softening in single-molecule electronic devices at high bias. Our theoretical analysis is carried out with a minimal model for molecular junctions, with mode softening arising due to quadratic electron-vibration couplings, and by developing a mean-field approach. We discover that the negative sign of the quadratic electron-vibration coupling coefficient can realize, at high voltage, a sharp negative differential resistance (NDR) effect with a large peak-to-valley ratio. Calculated current-voltage characteristics, obtained based on physical parameters for a nitro-substituted oligo(phenylene ethynylene) junction, agree very well with the measurements. Our results establish that vibrational mode softening is a crucial effect at high voltage, underlying NDR, a substantial diode effect, and the breakdown of current-carrying molecular junctions.

Angular momentum radiation from current-carrying molecular junctions

We consider the radiation of angular momentum (AM) from current-carrying molecular junctions. Using the nonequilibrium Green's function method, we derive a convenient formula for the AM radiation and apply it to a prototypical benzene molecule junction. We discuss the selection rules for inelastic transitions between the molecular angular momentum eigenstates due to a 6-fold rotational symmetry. Our study provides important insights into the generation of light with AM from DC-biased molecular junctions.

Energy, Particle, and Photon Fluxes in Molecular Junctions.

Electroluminescence from a current-carrying molecular junction at steady state is simulated. (Charge) particle conservation and energy conservation are satisfied by a perturbative expansion in the radiation/matter coupling. Our approach makes it possible to adopt standard tools of traditional (equilibrium) spectroscopy to study signals from open systems such as molecular junctions. The nonperturbative analysis of spontaneous light emission signals coincides with the perturbative approach for weak molecule-field coupling.

Spontaneous Light Emission from Molecular Junctions: Theoretical Analysis of Upconversion Signal.

Spontaneous light emission from a current-carrying molecular junction is analyzed. There are two leading processes, fluorescence and electroluminescence, as defined using Liouville space diagrams within the perturbative method, that contribute to the light emission from junctions. This allows us to identify a general mechanism that explains the origin of the so-called upconversion electroluminescence (UCEL) signal, which has been observed in a variety of molecular junctions [Umera et al. Chem. Phys. Lett. 2007, 448, 232; Dong et al. Nat. Photonics 2010, 4, 50]. Here, we show that a double-peak signal, one at energy less than the applied bias and the other at higher energy (UCEL), is generated due to overlap between two processes: one is electron transfer to create the required excited state, and the other is radiative relaxation of the excited state. The lifetimes induced by the lead interactions play a crucial role in determining the required overlap between these processes. Our analysis shows that, unlike the higher-energy signal, the lower-energy peak is sensitive to the applied bias and does not correspond to any optical resonance in the junction. The signal at higher energy is enhanced as the temperature is increased. We demonstrate our findings using nonperturbative analytic results for a model system.

Nonadiabatic Van der Pol oscillations in molecular transport

The force exerted by the electrons on the nuclei of a current-carrying molecular junction can be manipulated to engineer nanoscale mechanical systems. In the adiabatic regime a peculiarity of these forces is negative friction, responsible for Van der Pol oscillations of the nuclear coordinates. In this work we study the robustness of the Van der Pol oscillations against high-frequency bias and gate voltage. For this purpose we go beyond the adiabatic approximation and perform full Ehrenfest dynamics simulations. The numerical scheme implements a mixed quantum-classical algorithm for open systems and is capable to deal with arbitrary time-dependent driving fields. We find that the Van der Pol oscillations are extremely stable. The nonadiabatic electron dynamics distorts the trajectory in the momentum-coordinate phase space but preserves the limit cycles in an average sense. We further show that high-frequency fields change both the oscillation amplitudes and the average nuclear positions. By switching the fields off at different times one obtains cycles of different amplitudes which attain the limit cycle only after considerably long times.

Raman scattering from biased molecular conduction junctions: The electronic background and its temperature

The existence of background in the surface-enhanced Raman scattering from molecules adsorbed on metal surfaces has been known since the early studies about this phenomenon and is usually attributed to transitions between electronic states of the metal substrate. This paper reformulates the theory of this phenomenon in the framework of the nonequilibrium Green function formalism, which makes it possible to extend it to the case of Raman scattering from nonequilibrium (biased and current-carrying) molecular junctions. Following recent experiments, we address, in particular, the Raman-scattering measurement of current-induced electronic heating. The Raman temperature, defined by fitting the ratio between the Stokes and the anti-Stokes Raman signals to a Boltzmann factor is compared to another measure of electronic heating obtained by assuming that, close to the molecule-metal contact, the electronic distribution is dominated by the transmission process. We find that the Raman temperatures considerably exceed this upper bound to the metal-electron heating. In agreement with this observation, we show that the Raman temperature reflects the electronic nonequilibrium in the molecular bridge itself. We also show that the Raman-temperature concept breaks down at large biases.

Raman scattering in current-carrying molecular junctions

We present a theory for Raman scattering by current-carrying molecular junctions. The approach combines a nonequilibrium Green's function (NEGF) description of the nonequilibrium junction with a generalized scattering theory formulation for evaluating the light scattering signal. This generalizes our previous study [M. Galperin and A. Nitzan, Phys. Rev. Lett. 95, 206802 (2005); J. Chem. Phys. 124, 234709 (2006)] of junction spectroscopy by including molecular vibrations and developing machinery for calculation of state-to-state (Raman scattering) fluxes within the NEGF formalism. For large enough voltage bias, we find that the light scattering signal contains, in addition to the normal signal associated with the molecular ground electronic state, also a contribution from the inverse process originated from the excited molecular state as well as an interference component. The effects of coupling to the electrodes and of the imposed bias on the total Raman scattering as well as its components are discussed. Our result reduces to the standard expression for Raman scattering in the isolated molecule case, i.e., in the absence of coupling to the electrodes. The theory is used to discuss the charge-transfer contribution to surface enhanced Raman scattering for molecules adsorbed on metal surfaces and its manifestation in the biased junction.

Detection of heating in current-carrying molecular junctions by Raman scattering

As the scaling of electronic components continues, local heating will have an increasing influence on the stability and performance of nanoscale electronic devices. In particular, the low heat capacity of molecular junctions means that it will be essential to understand local heating and heat conduction in these junctions. Here we report a method for directly monitoring the effective temperature of current-carrying junctions with surface enhanced Raman spectroscopy (SERS) that involves measuring both the Stokes and anti-Stokes components of the Raman scattering. All the Raman-active modes in our system show similar heating as a function of bias at room temperature, which suggests fast vibrational relaxation processes inside the junctions. These results demonstrate the power of direct spectroscopic probing of heating and cooling processes in nanostructures.

Linear optical response of current-carrying molecular junction: A nonequilibrium Green’s function–time-dependent density functional theory approach

We propose a scheme for calculation of linear optical response of current-carrying molecular junctions for the case when electronic tunneling through the junction is much faster than characteristic time of external laser field. We discuss relationships between nonequilibrium Green's function (NEGF) and time-dependent density functional theory (TDDFT) approaches and derive expressions for optical response and linear polarizability within NEGF-TDDFT scheme. Corresponding results for isolated molecule, derived within TDDFT approach previously, are reproduced when coupling to contacts is neglected.