Crystal Structure Of As-deposited Films Research Articles

Influence of the Substrate Bias Voltage on the Structure of Rutile TiO<sub>2</sub> Films Prepared by Dual Cathode DC Unbalanced Magnetron Sputtering

Rutile TiO2 films are normally used as biomaterial that synthesized on unheated stainless steel type 316L and glass slide substrates by dual cathode DC unbalanced magnetron sputtering. The influence of the substrate bias voltages (Vsb), from 0 V to-150V, on the structure of the as-deposited films was investigated. The crystal structure was characterized by grazing-incidence X-ray diffraction (GIXRD) technique, the films thickness and surface morphology was evaluated by atomic force microscopy (AFM) technique, respectively. The results show that the as-deposited films were transparent and have high transmittance in visible regions. The crystal structure of as-deposited films show the XRD patterns of rutile (110) with Vsb at 0V and shifted to rutile (101) with increasing Vsb. The films roughness (Rrms) and the thickness were 3.0 nm to 5.7 nm and 420 nm to 442 nm, respectively.

Columnar microstructures of preferred oriented Aluminum Nitride films prepared by reactive sputtering

Aluminum nitride (AIN) thin films have drawn much attention as piezoelectric materials for generation and detection of surface acoustic wave (SAW) owing to high ultrasonic velocity and fairly large piezoelectric coupling factors. Since the piezoelectric properties are strongly dependent upon the c-axis orientation of AIN films, it is important to control the crystallographic orientation with deposition parameters. Though many reports have been presented, the mechanism of crystallographic orientation change with deposition parameters still remains unknown and the microstructure analysis of AIN films have been scarcely carried out. In this paper, we present the effect of sputtering pressure on thecrystallographic orientation and the microstruclure of the deposited AIN films, using X-ray diffraction (XRD) and transmission electron microscopy (TEM) study.AIN films have been deposited on Si (100) wafers by reactive RF magnetron sputtering in Ar-N2 gas mixture without substrate heating. The base pressure of vacuum chamber was below 1.5X10-6 Torr, RF power was 200 W and the ratio of gas flow rate (Ar:N2) was 3:1. Processing pressures ranged from 5 to 12 mTorr. Crystal structure of as-deposited films examined with XRD (Rigaku, D/MAX-RC, 12 kW) and microstructure analyses were carried out using crosssectional and plan-view TEM (JEOL 4000FX, 400 kV).