Critical Electric Field Research Articles

Continuous electrophoretic separation of submicron-microplastics from freshwater

Anthropogenic and natural weathering processes have produced submicron microplastics (MPs), an emerging contaminant. Due to small size, the treatment of submicron plastics particles by membrane processes requires small cutoff membranes, which necessitates great pressure gradient and suffers from clogging. The present study aims to develop an electrophoretic separation system for the separation of negatively charged submicron plastics particles from water. An electric field was supplied to produce an electrostatic force to counter the drag force in the permeation stream, thereby, preventing submicron plastics particles from entering the permeate. The critical electric field (Ec) for complete particles removal was estimated based on the dilute-to-influent flow rate ratio (qd), zeta potential, and size of submicron plastics particles. The result showed that at steady-state, particle removal could reach 99% at E > Ec at qd = 0.5. The distribution of plastics particles during electrophoretic separation was analyzed considering electrophoresis and particle deposition. The particle removal efficiency can be modelled by hydraulic condition and critical electric field. Finally, the engineering aspects such as long-term operation, electrode degradation and influence of coexisted constituents were evaluated. The operation cost of electrophoretic separation was calculated to be USD 0.48/m3, which is cost-effective at small scales compared to conventional membrane processes.

Electron transport and quantum phase transitions in cumulene-connected C80H20 fulleryne: DFT and tight-binding studies

Molecular bridges are opening up exciting new applications in diverse fields, improving the efficiency of conductive inks, enhancing the performance of devices such as organic light-emitting diodes and low-cost solar cells, and advancing the development of highly sensitive sensors, chemical reactions, drug delivery systems, and more. In this paper, we study the electron transport properties of a C80H20 fulleryne (dodecahedryne) connected to two cumulene electrodes. Using density functional theory (DFT), we determine the optimal molecular bridge structure. Based on the IR vibration spectra, different stable phases of the molecular bridge are obtained. The corresponding tight-binding (TB) parameters of the cage are obtained by assigning appropriate values of the length and type of bonds for the fulleryne cage through matching the HOMO-LUMO gap between the DFT calculations and the TB parameters. The electron transport for the desired structures is investigated using the obtained tight-binding parameters and the non-equilibrium Green's function (NEGF) method. Finally, it is concluded that among the five possible configurations for the cumulene-dodecahedryne -cumulene molecular bridge, only one specific configuration—where the electrodes are one edge apart—exhibits metallic behavior, while other positions act as insulators. In addition, the system exhibits quantum phase transitions from metal to semiconductor and from insulator to metal in the presence of critical electric fields. The ability to control quantum phase transitions in these molecular systems can be leveraged to develop qubits for quantum computing. The unique properties can be utilized to design advanced molecular electronic devices.

Phase transition mechanism and property prediction of hafnium oxide-based antiferroelectric materials revealed by artificial intelligence

Constrained by the inefficiency of traditional trial-and-error methods, especially when dealing with thousands of candidate materials, the swift discovery of materials with specific properties remains a central challenge in contemporary materials research. This study employed an artificial intelligence-driven materials design framework for identifying dopants that impart antiferroelectric properties to HfO2 materials. This strategy integrates density functional theory (DFT) with machine learning (ML) techniques to swiftly screen HfO2 materials exhibiting stable antiferroelectric properties based on the critical electric field. This approach aims to overcome the high cost and lengthy cycles associated with traditional trial-and-error and experimental methods. Among 30 undeveloped dopants, four candidate dopants demonstrating stable antiferroelectric properties were identified. Subsequent DFT analysis highlighted the Ga dopant, which displayed favorable characteristics such as a small volume change, minimal lattice deformation, and a low critical electric field after incorporation into hafnium oxide. These findings suggest the potential for stable antiferroelectric performance. Essentially, we established a correlation between the physical characteristics of hafnium oxide dopants and their antiferroelectric performance. The approach facilitates large-scale ML predictions, rendering it applicable to a broad spectrum of functional material designs.

Impact ionization coefficients along 4H-SiC 〈112¯0〉 in a wide temperature range

The impact ionization coefficients along 4H-SiC 〈112¯0〉 were determined in a wide temperature range from 294 K to 473 K. 4H-SiC (112¯0) p⎯n diodes were fabricated and photomultiplication measurements were conducted on two types of photodiodes to measure the multiplication factors of carriers. The extracted impact ionization coefficients of both electrons and holes along 4H-SiC 〈112¯0〉 decreased at high temperatures, which can be ascribed to the enhanced phonon scattering. On the basis of the results above, the critical electric field along 4H-SiC 〈112¯0〉 calculated from the obtained impact ionization coefficients increased with the temperature.

Giant enhancement and quick stabilization of capacitance in antiferroelectrics by phase transition engineering

The antiferroelectric-ferroelectric phase transition is a basic principle that holds promise for antiferroelectric ceramics in high capacitance density nonlinear capacitors. So far, the property optimization based on antiferroelectric-ferroelectric transition is solely undertaken by chemical composition tailoring. Alternately, here we propose a phase transition engineering tactic by applying pulsed electric stimulus near the critical electric field, which finally results in ~54.3% enhancement and quick stabilization of capacitance density in Pb0.97La0.02(Zr0.35Sn0.55Ti0.10)O3 antiferroelectric ceramics. Ex-situ and in-situ structural characterizations show that electric stimuli can induce the charming successive structural evolution, including domain evolution from multidomain to monodomain state, and modulation period change from 7.49 to 7.73. Structure-property correlation indicates that the antiferroelectric-ferroelectric phase transition engineering mainly stems from the unexpected irreversible recovery of the modulated structures. The present findings would deepen the understanding of the structural phase transition and provoke composition-independent post-treatment property innovation in the incommensurate antiferroelectric materials and devices.

Dual-gate AlGaN channel HEMTs: advancements in E-mode performance with N-shaped graded composite barriers

Abstract This work evaluates the performance of dual gate AlGaN channel HEMTs on SiC substrate. The study analyzes two HEMT structures that differ only in barrier design, one design consists of fixed composite barriers (FCB-HEMT) i.e. there is fixed Aluminum composition x = 0.48 in the first Al x Ga1−x N barrier and x = 0.42 in the second Al x Ga1−xN barrier while the other design comprises N-shaped graded composite barriers (NGCB-HEMT) i.e. the Aluminum content varies gradually from 0.4 to 0.48 in the first AlGaN barrier and from 0.34 to 0.42 in the second AlGaN barrier. The paper concentrates on energy band diagrams, electron concentration profile, electric field distribution, drain and transfer characteristics, and the effects of high temperature on drain characteristics and mobility of the NGCB-HEMT. It has been reported that at zero gate bias, the FCB-HEMT has a drain current density of 0.137 A mm−1 while it decreases to 0.0058 A mm−1 in the case of NGCB-HEMT, thus presenting a novel approach towards enhancement-mode AlGaN HEMTs. Hence, grading can be optimized in the composite barriers to achieve enhancement mode operation of AlGaN channel HEMTs. Furthermore, the study reveals that the critical electric field of FCB-HEMT is 6.9975 M V cm−1, while that of NGCB-HEMT is 5.3124 M V cm−1, demonstrating their usefulness in electronic devices that operate at high voltages and harsh temperatures. Moreover, at higher temperatures, the phenomenon of optical phonon scattering leads to decreased mobilities, which in turn causes low drain currents relative to the drain voltage.

Effect of surface alignment on electric-field-induced phase transitions in blue phases

This study investigates the critical electric field thresholds required for phase transitions in the blue phases of liquid crystals (BPs) confined within vertical field switching cells. BPs are attractive for electro-optical applications due to their polarization-independent response and fast switching times; however; challenges remain regarding their limited temperature stability and previously reported high operational voltages. We employ a combined approach of polarized optical microscopy and electrical impedance analysis to identify the electric field thresholds triggering BP transitions to focal conic domains in cells with and without planar polyimide alignment layers. We show that surface alignment layers stabilize the blue phases and allow for higher applied electric fields before transitioning into the focal conic state. This suggests the possibility of a wider operational voltage range in thinner cells with alignment layers. These findings significantly improve our understanding of BPs, addressing key challenges and paving the way for their integration into advanced photonic devices, based on the CMOS technology.

Probing the Role of Solvent Configurations and Local Electric Fields on HX (X = F, Cl, Br and I) Dissociation in Water Clusters.

The acidity of hydrohalic acids increases down the group, with HF and HI being the weakest and strongest acids. Electronic structure calculations suggest that the critical electric fields required for the dissociation of HF, HCl, HBr, and HI are 347, 193, 163, and 153 MV cm-1, respectively, which are proportional to their corresponding pKa values and emphasize that in these systems the bond dissociation energy determines the pKa. The solvent configuration plays a significant role in the acid dissociation process, which is illustrated by a particular configuration of three water molecules around HX and favors dissociation of only HBr, even though the critical electric field required for the dissociation of HI is lower than that of HBr, as depicted in the graphical abstract. Further, the Born-Oppenheimer molecular dynamics (BOMD) simulations suggest that the spontaneity of HX dissociation depends on both the solvent configuration and thermal fluctuations, which hold higher significance in the case of weaker acids. In general, it was observed that the solvent electric field required for the acid dissociation process is marginally lower at higher temperatures.

Phase evolution, dielectric thermal stability, and energy storage performance of NBT-based ceramics via viscous polymer process

There is an urgent need to develop stable and high-energy storage dielectric ceramics; therefore, in this study, the energy storage performance of Na0.5-xBi0.46-xSr2xLa0.04(Ti0.96Nb0.04)O3.02 (x = 0.025–0.150) ceramics prepared via the viscous polymer process was investigated for energy storage. It was found that with increasing Sr2+ content, the material transforms from a mixture of rhombohedral and tetragonal phases (x = 0.025) to a mixture of orthorhombic and pseudo-cubic phases (x = 0.15). The emergence of a dielectric plateau for the sample with x = 0.15 widens the applicability of the host compound. Finite element simulations show that a smaller grain size has a beneficial effect on the critical breakdown electric field and that the relaxor transformation benefits from the reduction of residual polarization (Pr). The obtained ceramics achieve a value of 6.69 J/cm3 for the energy storage density (Wrec) and 89.48 % for the energy storage efficiency (η) under an applied electric field of 400 kV/cm, with a discharge time (t0.9) of 0.168 μs at 90 % of the energy under an electric field of 280 kV/cm, and a power density (Pd) of 148 MW/cm3. This study shows a novel strategy for the modification of the dielectric and ferroelectric properties of NBT-based ceramics, providing an effective way to expand the operational temperature range and improve energy storage performance.

Advanced electro-assisted filtration of crude oil/water using a conductive mullite whiskers membrane

This study presents the development and characterization of a conductive composite membrane aimed at efficient oil-water separation via electrofiltration. The membrane comprises interconnected OH-functionalized multi-walled carbon nanotubes (OH-MWCNTs) and polyvinyl alcohol (PVA). Optimization parameters, including surface electrical resistance, water contact angle, and pure water permeance, were conducted, yielding an optimized membrane with a surface resistance of 256 Ω/sq, a contact angle of 39±2°, and a pure water permeance of 508.15 LMH/bar. The critical electric field intensity (Ecrit) was identified at 8–10 V, beyond which voltage increments had minimal flux impact. Electrofiltration experiments, incorporating filtration and backwashing, demonstrated enhanced permeate flux and oil particle removal rates under an applied electric field. Despite salt presence inducing flux reduction and fouling increase, membrane performance was still enhanced by the electric field. Energy consumption analysis revealed a 32 % reduction when combining electrical field with conventional filtration and backwashing, even at 1 mM concentration, compared to conventional filtration alone. This conductive composite membrane presents a promising, sustainable solution for effective crude oil/water separation across industries, offering improved performance, reduced fouling, and lower energy consumption.

Epitaxial Growth of Ga2O3: A Review.

Beta-phase gallium oxide (β-Ga2O3) is a cutting-edge ultrawide bandgap (UWBG) semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric field strength of about 8 MV/cm. These properties make it highly suitable for next-generation power electronics and deep ultraviolet optoelectronics. Key advantages of β-Ga2O3 include the availability of large-size single-crystal bulk native substrates produced from melt and the precise control of n-type doping during both bulk growth and thin-film epitaxy. A comprehensive understanding of the fundamental growth processes, control parameters, and underlying mechanisms is essential to enable scalable manufacturing of high-performance epitaxial structures. This review highlights recent advancements in the epitaxial growth of β-Ga2O3 through various techniques, including Molecular Beam Epitaxy (MBE), Metal-Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), Mist Chemical Vapor Deposition (Mist CVD), Pulsed Laser Deposition (PLD), and Low-Pressure Chemical Vapor Deposition (LPCVD). This review concentrates on the progress of Ga2O3 growth in achieving high growth rates, low defect densities, excellent crystalline quality, and high carrier mobilities through different approaches. It aims to advance the development of device-grade epitaxial Ga2O3 thin films and serves as a crucial resource for researchers and engineers focused on UWBG semiconductors and the future of power electronics.

Broad temperature range ferrielectric liquid crystal: Temperature dependencies of dielectric and electro-optical properties

Broad temperature range ferrielectric liquid crystal mixture FerriLCM-1 was previously developed in 2022 (Pozhidaev et al. 2022). In that work dielectric and electro-optical properties of the mixture were studied at room temperature. Electrically induced birefringence index reached 0.01 at a wavelength of 532 nm with response times of 300 μs. In this paper we continue the FerriLCM-1 properties investigation in a wide temperature range from the room ones till the isotropic phase transition temperature. It is found that one of the critical electric fields is almost temperature independent, while the Kerr coefficient of quadratic electro-optical effect in deformed helix ferroelectric (DHF) mode grows with temperature increase. This leads to an increase in the depth of phase modulation. Another critical electric field decreases smoothly with temperature rising. At 47–50 °C two critical electric fields merge, while temperature dependencies of all other dielectric and electro-optical parameters of the mixture are continuous and smooth functions. At about 50 °C the maximum electrically induced birefringence in DHF-mode is ΔneffE=0.022 under the applied electric field E=0.4 V/μm and with 80 μs response time. FerriLCM-1 mixture operating in the DHF-mode exhibits a giant Kerr coefficient of 1700 nm/V2 (or even up to 2900 nm/V2 at λ=400nm) at the temperature of 85 °C combined with a 50 μs response time. This is the highest value of Kkerr coefficient among liquid crystals. All these properties make ferrielectric liquid crystal mixture FerriLCM-1 suitable for solving various problems of phase modulation of light and use in low-voltage devices.

Wafer-bonded In0.53Ga0.47As/GaN p–n diodes with near-unity ideality factor

III–V/III-nitride p–n junctions were realized via crystal heterogeneous integration, and the resulting diodes were characterized to analyze electrical behavior and junction quality. p-type In0.53Ga0.47As, which is a well-established base layer in InP heterojunction bipolar transistor (HBT) technology, was used in combination with a homoepitaxial n-type GaN. The latter offers low dislocation density, coupled with high critical electric field and saturation velocity, which are attractive for use in future HBT collector layers. Transmission electron microscopy confirms an abrupt interface in the fabricated heterogeneous diodes. Electrical characterization of the diodes reveals a near-unity ideality factor (n ∼ 1.07) up to 145 °C, a high rectification ratio of ∼108, and a low interface trap density of 3.7 × 1012 cm−2.

Revealing the mechanisms of electrocaloric effects by simultaneously direct measuring local electrocaloric and electrostrain under ambient conditions

Electrocaloric solid-state refrigeration is a primary candidate for the next-generation cooling method for microelectronic systems. However, the mechanisms of electrocaloric effect remain unclear due to the lack of direct correlation evidence, especially for novel negative electrocaloric (NEC) effect. In this work, we develop a high-accuracy direct measurement method for simultaneously measuring local electrocaloric and electrostrain responses under ambient conditions, providing the accompanying electrostrain evidence during electrocaloric effect. Combined with experiments, thermodynamic analyses and finite element simulations, it is found that the electrostrain is very large when NEC and large positive electrocaloric (PEC) responses occur, and NEC effect is caused by ferroelectric-ferroelectric phase transition, while large PEC response originates from paraelectric-ferroelectric phase transition. Results also indicate that NEC temperature change does not increase with electric field, and shows the maximum temperature change at phase transition critical electric field, different from PEC temperature change increasing with electric field. The developed method provides an alternative and sensitive pathway to investigating electrocaloric effect.

A low-cost and convenient route of fabricating GaN films with P-type mixed microcrystalline and amorphous structure deposited via Ga target of magnetron sputtering

GaN, a third-generation semiconductor, has gained widespread attention owing to its high temperature resistance, wide bandgap, and high critical breakdown electric fields. Magnetron sputtering has a broad potential in the field of low-cost growth of GaN on account of high efficiency, superior quality, and convenient operation. However, challenges caused from the pure Ga targets with a huge refrigeration system need to be resolved for wide practices. Here, a new and cost-effective Ga target for magnetron sputtering was fabricated by utilizing the wetting properties of CuGa2 and Ga. Mixed microcrystalline and amorphous GaN films were obtained via reactive magnetron sputtering employing the Ga target. The average deposition rate is about 1.68 nm/min, and the average roughness is ∼7.45 ± 0.26 nm under 100 W of sputtering power. In addition, the sputtered GaN films were found to be wide-bandgap and p-type semiconductors with high transmittance, as revealed by x-ray photoelectron spectroscopy and absorption spectra. The GaN films display a bandgap of ∼3.60 eV and a transmittance exceeding 88.5% in the visible range. Furthermore, field-effect transistors and metal–semiconductor–metal photodetectors have been fabricated using the obtained GaN films, demonstrating favorable response characteristics. The prospects of microcrystalline/amorphous GaN films in sensing, power devices, and flexible electronics were forecasted. Overall, a low-cost and pervasive route of target fabrication process expands the possibilities of using low melting point metals in magnetron sputtering.

A universal yield stress equation for electrorheological fluids

In this study, we investigate the universality of the yield stress [τyE0, where E0 is electric field strength] for examining electrorheological (ER) fluids both experimentally and theoretically. We found that the published experimental data for the yield stress of ER fluids for various materials and measurement conditions obey a yield stress scaling equation. In other words, the ER yield stress data in the literature collapse onto a universal correlation: τ̂=1.313Ê3/2tanhÊ using scaled variables τ̂≡τyE0/τyEc and Ê≡E0/Ec. Here, Ec is critical electric field strength. Although this expression is attractive for experimentalists, this empirical equation has not been derived from first principles. We introduce a mesoscopic elementary region concept and justify this universal correlation for the first time. We decompose the ER system into a finite number of elementary regions and introduce “glueons,” which adhere to neighboring elementary regions resulting in fibrillary structures. We investigated the limiting case when the elementary region size is reduced to zero (continuum limit) and used a reaction-diffusion model to calculate glueon concentration. In modeling the reaction term (generation of glueons), we used a linear model by recognizing that the electric field activates glueons, i.e., the number of glueons increases as the electric field strength increases. In our preliminary study, we were able to justify a universal correlation by solving the glueon concentration equation using a simple geometry. The novelty of this work is the development of universality for the ER yield stress and derivation of a universal scaling equation.

Analysis of Electric Breakup Characteristics of Emulsion Droplets Based on Dissipative Particle Dynamics Method

Crude oil desalination and dehydration are necessary for storage, transportation, and processing procedures. However, the behaviour of fine emulsion droplets under an electric field has always been questioned. This paper modified the dissipative particle dynamics method (DPD) to study the deformation process of fine emulsion droplets under a high-strength electric field. Compared with the literature data, the reliability of the DPD method is confirmed. The influence of the crude oil properties and the electric field characteristics on the behaviour of the emulsion droplet was analysed, and the effect factors included electric field intensity, electric field frequency, emulsion droplet size, centre distance ratio, conservative force intensity, dissipative strength, and crude oil density. The relationship between critical electric field intensity and emulsion droplet deformation was formulated based on the simulational dates.

A Review of Diamond Materials and Applications in Power Semiconductor Devices.

Diamond is known as the ultimate semiconductor material for electric devices with excellent properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility 4000 cm2/V·s, hole mobility 3800 cm2/V·s), high critical breakdown electric field (20 MV/cm), and high thermal conductivity (22 W/cm·K), showing good prospects in high-power applications. The lack of n-type diamonds limits the development of bipolar devices; most of the research focuses on p-type Schottky barrier diodes (SBDs) and unipolar field-effect transistors (FETs) based on terminal technology. In recent years, breakthroughs have been made through the introduction of new structures, dielectric materials, heterogeneous epitaxy, etc. Currently, diamond devices have shown promising applications in high-power applications, with a BV of 10 kV, a BFOM of 874.6 MW/cm2, and a current density of 60 kA/cm2 already realized. This review summarizes the research progress of diamond materials, devices, and specific applications, with a particular focus on the development of SBDs and FETs and their use in high-power applications, aiming to provide researchers with the relevant intuitive parametric comparisons. Finally, the paper provides an outlook on the parameters and development directions of diamond power devices.

Interruption characteristic of 3%C5F10O/97%CO2 gas mixture in a 40.5 kV circuit breaker

The C5F10O/CO2 gas mixture is one of the most promising SF6 alternative gases at the present stage, which was initially applied in high-voltage electrical equipment. This paper mainly studies the interruption performance of 3%C5F10O/97%CO2 gas mixture (k = 3%) with a charging pressure of 0.6 MPa in high-voltage circuit breakers. First, the thermodynamic parameters, transport coefficient, and net radiation coefficient were calculated for k = 3%. On this basis, a 40.5 kV circuit breaker was used as a prototype to establish the magnetohydrody-namic model for breaking 20 kA short-circuit current, and the arc temperature and pressure distribution in the arc extinguishing chamber of the circuit breaker were calculated. The LC oscillation circuit was used to build an arc-extinguishing characteristic test platform to verify the accuracy of the numerical calculation. Finally, based on the Mayr arc model and the critical electric field strength, the post-arc thermal breakdown and electrical breakdown characteristics of SF6, CO2, and k = 3% were quantitatively analyzed. The results show that under 0.6 MPa, the thermal breakdown performance of k = 3% is about 89.7% of SF6, which is nearly twice higher than that of CO2 and has better thermal breaking ability. The electrical breakdown performance of k = 3% is about 20.4% of SF6, and the probability of electrical breakdown in the front end of the fixed contact is high. This problem should be paid attention to in the design of high-voltage circuit breakers. This study can provide a reference for the development and optimization of environmentally friendly high-voltage circuit breakers.

Superior dielectric energy storage performance of ultrafine-grained BNT-SBT solid-solution ceramics by solution combustion synthesis

The micrometer scale grain size and large remnant polarization of Bi0.5Na0.5TiO3 (BNT) ferroelectric ceramics severely constrain the breakdown strength and energy efficiency, respectively, restricting their energy storage application despite their large polarization. Hereby, superior energy storage performance is reported by a synergistic strategy of introducing Sr0.7Bi0.2TiO3 (SBT) relaxor ferroelectrics and a solution combustion synthesis (SCS) method. The BNT-SBT solid-solution ceramics are comparatively investigated by the two methods, conventional sintering (CS) and SCS. An ultrafine average grain size of ∼0.39 μm was obtained in the SCS-derived ceramic, and thus exhibits an ultra-high critical electric field of 548 kV/cm, and a high recoverable energy density of ∼5.69 J/cm3. Those key energy storage parameters are superior to those of the previous reported samples prepared by the CS method. Meanwhile, a high energy efficiency ∼90 %, a large power density of ∼130.44 MW/cm3 (at 320 kV/cm), and an ultrafast discharge time of ∼61.7 ns are also achieved. This study indicates that grain engineering combing with chemical design is an effective way to enhance the dielectric energy storage performance.