In the presented work, the mechanism of evolution of defects in the crystalline structure after irradiation with 1500 kGy and 3000 kGy absorption dose at room temperature in a 60Co gamma source was studied, using 43 nm sized ZrB2 crystals. The crystals were characterized by a purity of 99.9%, a powder density of 0.23 g/cm3, a specific surface area of 80 to 120 m2/g, and a hexagonal P6/mmm spatial structure. The dose rate applied was 6.05 Gy/s, with 1.17 and 1.37 MeV energy lines. The effect of particles resulting from the decay of 22Naradioactive isotope β+ with an activity of 10.5 μCi, as well as gamma quanta with an energy of 1.27 MeV, on the core and valence electrons and vacancies in the crystal structure was studied using Positron Annihilation Lifetime Spectroscopy (PALS) and Doppler broadening analysis methods. Additionally, the changes in the S and W parameters, which characterize the distribution of defects within the volume of the ZrB2 crystal, were studied using the Doppler broadening method. For unannealed material, the positron lifetime τ1 component varied between 174±2 ps and 181±1 ps. After annealing, the positron lifetime component τ2 was decreased from 290±3 ps to 226±3 ps, and the intensity component I2 increased from 17.49% to 40% depending on the radiation dose. The calculated values of the positron lifetime τ for one boron vacancy from ABINIT and MIKA packages were found to be 172 ps and 145 ps, respectively. The material was observed to satisfy the necessary functional conditions at gamma doses not exceeding 3000 kGy.