The investigation and understanding of heterointerfaces formation and charge transfer dynamics in two or more semiconductor heterojunctions increased ensuing establishment of S-scheme and dual S-scheme heterojunctions. However, investigations of possible charge transfer at interfaces and their type in four component systems are limited. Herein, a four-component heterojunction was investigated to postulate and demonstrate deviation between quadruple and triple S-scheme heterojunctions possibilities using LaNiO3, BiOBr, CuBi2O4, and Bi2WO6. DFT and XPS were used to construct the band structure and support the charge transfer at the interfaces to follow S-S strategy during OTC and SMX degradation under visible light. IEF, bend bending systematically modulated charge transfer, and the core-shell strategy restricted possible junctions’ formation to three to accord triple S-scheme heterojunction. This work demonstrated the construction of Triple S-scheme heterostructures as a promising strategy for efficient charge separation making it a suitable candidate for elimination of pollutants.
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