A polypyrrole-bismuth tungstate (Ppy-Bi2WO6) core-shell nanocomposite (n-type material) has been developed on a layered Ppy (p-type) base as an efficient light-capturing material exhibiting photodiode behavior. This device demonstrates promising sensitivity for light sensing and captures across a broad spectral range, from near IR to UV. The Bi2WO6/Ppy nanocomposite boasts an optimal bandgap of 2.0eV, compared to 3.4eV for Ppy and 2.5eV for Bi2WO6. The crystalline size of the core-shell composite is approximately 21nm, emphasizing its photon absorption capabilities. The composite particles, around 100nm in length, feature a highly porous morphology that effectively traps incident photons. The performance of this optoelectronic device is evaluated using current density (J) measurements under light (Jph) and dark (Jo) conditions. In darkness, the n-p type semiconductor exhibits limited current with a Jo of -0.22mA cm-2 at 2.0V. When exposed to white light, the Ppy- Bi2WO6/Ppy device generates hot electrons, achieving a Jph value of 1.1mA/cm-2 at 2.0V. It shows a superior responsivity (R) of 6.6mA/W at 340nm, gradually decreasing to 6.3mA/W at 440nm and 4.2mA/W at 540nm, indicating high sensitivity across the UV-Vis spectrum. At 730nm, the R-value is 2.6mA/W, highlighting its sensitivity in the near IR region. Additionally, at 340nm, the device achieves a detectivity (D) value of 0.15 × 10¹⁰ Jones, which decreases with longer wavelengths to 0.14 × 10¹⁰ Jones at 440nm, 0.9 × 10⁹ Jones at 540nm, and 0.63 × 10⁹ Jones at 730nm. With its great stability, low cost, easy fabrication, and potential for mass production, this optoelectronic light sensor and photodiode device holds significant promise for industrial applications as a highly effective optoelectronic device.
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