Conventional powder metallurgy techniques fail to meet the demands for ultrahigh purity tungsten (UHPW) and scalable component sizes required by the semiconductor industry. In this study, ultrahigh purity (99.999998 wt %) large-size tungsten parts, with an adjustable thickness and a diameter of 350 mm, were prepared via a chemical vapor deposition (CVD) method using ultrahigh purity (99.9999 wt %) tungsten hexafluoride (WF6) as the precursor. The microstructure and physical properties of the resulting CVD-UHPW were evaluated and compared with those of powder metallurgy tungsten (PM-W). The results indicate that CVD-UHPW displays a columnar grain microstructure with a lower dislocation density and internal strain, whereas PM-W shows an equiaxed grain microstructure. CVD-UHPW has a density of 19.17 g/cm3, closely matching the theoretical density of tungsten (19.35 g/cm3) and significantly higher than PM-W's density of 18.79 g/cm3. The specific heat capacities of CVD-UHPW, measured from 298 to 1473 K, range from 0.113 to 0.146 J/g·K, similar to PM-W's range of 0.120 to 0.151 J/g·K. CVD-UHPW shows improved electrical and thermal conductivities compared to PM-W, with values ranging from 1.68 × 106 to 1.78 × 107 S/m and 105.7 to 196.4 W/(m·K) from 298 to 1473 K. This study highlights the potential of the CVD method for the large-scale production of ultrahigh purity tungsten parts, emphasizing its significant applicability across various industries.
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