The emergence of neuromorphic devices has disrupted the traditional von Neumann architecture, providing a solution to the challenges of simulating neural parallel processing and power consumption in conventional computer architectures [1]. Access regions (ARs) are strategically created and positioned in proximity to source and drain electrodes, resulting in a channel that does not overlap with the floating gate (FG) [2]. In this study, we investigated ARs integrated van der Waals heterostructural field-effect transistor (AR-VH-FET) device, constructed by vertically stacking several 2D materials. Specifically, molybdenum disulfide (MoS2) served as a channel, hexagonal boron nitride (h-BN) as a tunneling layer, and graphene (Gr) as the FG. We conducted measurements on the transfer and output characteristics to characterize the electrical performance of the AR-VH-FET. Under a fixed VDS, with the application of positive and negative VBG as programming and erasing voltages respectively, we measured device retention and endurance. AR-VH-FET devices not only emulate basic neuromorphic functions but also replicate biological characteristics.
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