Indium Content Research Articles

Magnetocaloric and Magnetostrictive Properties of the Tb(Co,In)<sub>2</sub> Laves Phases

Multicomponent polycrystalline TbInxCo2–x (with х = 0–0.2) solid solutions are prepared for the first time, and their crystal structure and magnetic, magnetocaloric, and magnetostrictive properties are studied. X-ray diffraction patterns taken at room temperature demonstrate mainly the presence of the cubic C15 Laves phase in all samples. As the indium content increases to x = 0.1, the lattice parameter is found to increase; the further increase in the indium content to х = 0.2 leads to a decrease in the lattice parameter. In this case, the Curie temperature TC monotonically increases to 245 K. The isotheral magnetic entropy change ΔSmag is calculated in accordance with magnetic measurements using the thermodynamic Maxwell’s relation. At a magnetic field change from 0 to 1.8 T, the maximum entropy change monotonically decreases and, for composition with x = 0.2, is 1.8 J/(kg∙К). As the indium content increases to x = 0.05, the volume magnetostriction increases. The further increase in the indium concentration leads to the decrease in the peak values and their shift to high temperatures.

Investigation on indium concentration in two-terminal tandem indium gallium nitride solar cells by SCAPS-1D

Indium gallium nitride (InGaN) thin-film solar cell is a promising photovoltaic (PV) device. InGaN’s bandgap is tunable from 0.7 to 3.4 eV and it exhibits a high absorption coefficient exceeding 105 cm−1. Besides, InGaN solar cells can be used in tandem configuration, to effectively absorb the solar spectrum. Previous works found that increased indium (In) concentration leads to inverse relationship between open-circuit voltage (Voc) and power conversion efficiency (PCE) of the solar cell. This leads to deleterious device performance. This study aims to assess the performance of two-terminal InGaN tandem solar cells using SCAPS-1D simulation software. The findings revealed maximum short-circuit current density (Jsc) of 26.19 mA cm−2, open-circuit voltage (Voc) of 2.13 V, fill factor (FF) of 89.68%, and PCE of 30.17% from the tandem device. The results indicate that higher In concentration enhances light absorption and the overall PCE, with tandem cells outperforming single-junction cells. This study makes a valuable contribution to the advancement of high-efficiency solar technology based on InGaN.

The Green Indium Patented Technology SCRIPT, for Indium Recovery from Liquid Crystal Displays: Bench Scale Validation Driven by Sustainability Assessment

Indium is considered a valuable and irreplaceable material for a variety of applications that improve the quality of human life. Due to its limited availability and the growing demand, it is mandatory to find sustainable solutions for indium recovery from end-of-life devices. The green indium patented technology SCRIPT (ITA202018000008207) focuses on recovering indium from ground LCD panels, developed through laboratory scale investigation. The process ensures high recovery efficiencies of indium (>90%), features a simple design, and fully exploits the solid residue with the production of a concrete for building applications. This manuscript presents a study focused on the validation and optimization of the patented SCRIPT technology at the bench scale, driven by sustainability assessment. Bench scale experiments successfully validated the technology, improving its technology readiness level. Furthermore, an environmental sustainability assessment highlighted the importance of treating the finest fraction, which has the highest indium concentration. Optimization tests at the bench scale demonstrated that water could be recirculated for more than five cycles. The economic sustainability tests highlighted that when the indium concentration in the material fed into the recycling plant is above 1000 mg/kg, the technology is cost effective and worth investment. Our study is fundamental for boosting indium recycling in the world. Moreover, our methodological approach represents a guideline for achieving sustainability goals within circular economy approaches for strategic metals in complex matrices.

Effects of TMIn Flow Rate During Quantum Barrier Growth on Multi-quantum Well Material Properties and Device Performance in GaN-Based Laser Diodes

Abstract Multidimensional influence of indium composition in barrier layers on GaN-based blue laser diodes (LDs) are discussed through both material quality and device physics perspectives. LDs with higher indium content in the barriers demonstrate a notably lower threshold current and shorter lasing wavelength compared to those with lower indium content. Our experiments reveal that higher indium content in the barrier layers can partially reduce indium composition in the quantum wells, a novel discovery. Employing higher indium content barrier layers leads to improved luminescence properties of MQW region. Detailed analysis reveals that this improvement can be attributed to better homogeneity in the indium composition of the well layers along the epitaxy direction. InGaN barrier layers suppressed lattice mismatch between barrier and well layers, thus mitigating the indium content pulling effect in well layers. In supplement to experimental analysis, theoretical computations are performed, showing that InGaN barrier structures can effectively enhance carrier recombination efficiency and optical confinement of LD structure, thus improving output efficiency of GaN-based blue LDs. Combining these theoretical insights with our experimental data, we propose that higher indium content barriers effectively enhance carrier recombination efficiency and indium content homogeneity in quantum well layers, thereby improving the output performance of GaN-based blue LDs.

Constructing dilute Mg-1.0In binary alloy: A pathway to enhanced anode performance in Mg-air battery

Magnesium anode is a critical material in Mg-air battery; however, the contradiction between mitigating self-corrosion and promoting activation poses a significant obstacle to the rapid advancement of primary magnesium batteries. Herein, this issue is addressed by constructing a dilute Mg-1.0In binary alloy with 1 wt% indium as the anode material. The equiaxed dendrites and moderate indium concentration gradient in the as-cast anode facilitate the formation of a protective surface film, leading to a low corrosion rate of 0.20 mm y−1 and enhancing the stability prior to discharge. Moreover, during the battery discharge process, this unique microstructure enables the redeposition of metallic indium and indium hydroxide, thereby dramatically accelerating the shedding of oxidation products and suppressing side hydrogen evolution reaction. The Mg-1.0In anode in a Mg-air battery delivers a discharge capacity of 1587 mA h g−1 and an average voltage of 1.46 V at 10 mA cm−2, outperforming most of previously reported magnesium anodes and the control samples with various indium contents. This work would inspire the achievement of superior Mg-air battery performance through the use of binary magnesium anode system in as-cast state, as opposed to a more complex and time-consuming multi-component anode design involving heat treatment and plastic deformation.

Investigation of low temperature amorphous (InxGa1−x)2O3 films modulated by indium content for optimization in solar-blind photodetector

In this study, bandgap engineering of amorphous (InxGa1-x)2O3 alloy films fabricated at room temperature using pulsed laser deposition and alloy targets with different indium contents from 0 % to 50 % have been investigated. The effect of indium content on the characteristics of (InxGa1-x)2O3 films and the performance of metal–semiconductor-metal solar-blind photodetectors have been explored in detail. The moderate number of indium atoms introduced into Ga2O3 can obtain a flat surface morphology and adjusted bandgap to enhance the performance of solar-blind photodetector. When the excessive indium atoms were incorporated into the film, the obviously In enriched (InxGa1-x)2O3 alloy nano-clusters are observed on the film surface despite of the low growth temperature. It can be attributed to the segregation phenomenon because of the solid solubility limitation for indium in Ga2O3. Both of dark current and photocurrent of (InxGa1-x)2O3 photodetector increase with the incremental indium content mainly attributed to enhanced oxygen deficiency. As a result, the solar-blind photodetector can achieve an optimal performance using a balanced indium content of 20 % with an extremely low dark current of 4.4 × 10-12 A, a responsivity of 10.8 mA/W, a substantial on/off current ratio of 1.5 × 104 and a short rise/decay time of 0.33 s/0.54 s.

Modifications of some physical properties of nanostructured indium doped Co3O4 thin films

Using the chemical spray pyrolysis (CSP) technique, nanostructured undoped and Co3O4:In thin films are deposited. The effect of indium doping content in Cobalt ranged from 1% to 3% on optical, structural, and topographical properties of Co3O4 nanostructured thin films. No new peaks belonging to the In phase were seen, according to X-ray diffraction research, which revealed that pure and Co3O4: In thin films are polycrystalline in and cubic phase with (111), (311), (400), and (511) preferable orientation for all filmsThe Scherrer formula computation of average crystallite size shows that the size of Nano crystallites grows when doping is enhanced. AFM micrographs demonstrated how the surface shape of the films was discovered to be influenced by the inclusion of indium in the Co3O4 location.SEM images of Undoped Co3O4 and Co3O4:In films (CSP technique), showing separate semi-spherical blocks (120-200 nm) of nanoparticles (<30 nm). Band gap values for pure and doped were 2.52 to 2.38 eV. Resistance increases with increases Indium-doping, indicating more charge carriers and potential surface roughness influence. Sensitivity decreases with higher Indium concentrations, attributing to enhanced crystallinity and nano-crystalline size.

Modifications of some physical properties of nanostructured indium doped Co3O4 thin films

Using the chemical spray pyrolysis (CSP) technique, nanostructured undoped and Co3O4:In thin films are deposited. The effect of indium doping content in Cobalt ranged from 1% to 3% on optical, structural, and topographical properties of Co3O4 nanostructured thin films. No new peaks belonging to the In phase were seen, according to X-ray diffraction research, which revealed that pure and Co3O4: In thin films are polycrystalline in and cubic phase with (111), (311), (400), and (511) preferable orientation for all filmsThe Scherrer formula computation of average crystallite size shows that the size of Nano crystallites grows when doping is enhanced. AFM micrographs demonstrated how the surface shape of the films was discovered to be influenced by the inclusion of indium in the Co3O4 location.SEM images of Undoped Co3O4 and Co3O4:In films (CSP technique), showing separate semi-spherical blocks (120-200 nm) of nanoparticles (<30 nm). Band gap values for pure and doped were 2.52 to 2.38 eV. Resistance increases with increases Indium-doping, indicating more charge carriers and potential surface roughness influence. Sensitivity decreases with higher Indium concentrations, attributing to enhanced crystallinity and nano-crystalline size.

Nanoscopic analysis of rapid thermal annealing effects on InGaN grown over Si(111)

This study explores the impact of rapid thermal annealing (RTA) on InxGa1-xN grown over Si(111) by molecular beam epitaxy (MBE). Through X-ray diffraction (XRD) and reciprocal space map (RSM) characterization, notable shifts in diffraction peaks were observed post-annealing, suggesting alterations of the Indium content in the nanostructures. Morphological assessments using scanning electron microscopy (SEM) and atomic force microscopy (AFM) indicated that RTA could smooth the surface of the samples, though some instances of degradation were also noted. Energy-dispersive X-ray spectroscopy (EDS) showed further stoichiometric modification following annealing. Photoluminescence spectroscopy (PL) revealed notable shifts and increases in the intensity of the InxGa1-xN peaks, indicating the formation of regions with high Indium or Gallium concentration. The presence of these enriched regions was particularly evident from the peaks at around 540 nm and 433 nm, suggesting significant changes in the material's composition. Transmission electron microscopy combined with electron energy loss spectroscopy (TEM-EELS) corroborated the presence of In-rich and Ga-rich areas, affirming the phenomenon of Indium surface segregation. So, this study contributes to understanding the behavior of InxGa1-xN nanostructures under rapid thermal annealing, providing insights for advanced optoelectronic applications.

Optimization of InGaN-based solar cells by numerical simulation: Enhanced efficiency and performance analysis

The development of efficient solar cells is limited by the inability of the materials to absorb light from the entire solar spectrum. InGaN solar cells have become promising, due to the broad bandgap coverage of the solar spectrum from 0.7 eV to 3.42 eV. The performance of InGaN devices is simulated using SCAPS-1D software. The impacts of layer thickness and defect density on the performance of p-n and p-p-n junction InGaN solar cells were investigated, including holistic optimization of power conversion efficiency and quantum efficiency. A notable observation was the improvement in conversion efficiency with rising indium content, peaking at 23.8 % for In0.6Ga0.4N. For p-p-n junction cells, a thicker p-layer plus an additional thin top p-layer with a larger bandgap proved advantageous. The n-layer defect density in p-n junction cells showed minimal effects on open-circuit voltage and fill factor but reduced short-circuit current and efficiency as it increased. Conversely, the p-layer defect density influenced performance only at high densities beyond 1016 cm−3, while for p-p-n junctions, the top p-layer’s defect density had minimal impact. The optimized designs for both p-n and p-p-n junction cells, incorporating graded bandgaps, achieved optimal conversion efficiencies of 33.89 % and 34.07 %, respectively. The p-p-n design showed an enlarged high-efficiency area for suitable indium concentrations, offering broader indium concentration tuning possibilities and better lattice constant tuning. Quantum efficiency evaluations show the differences of defect densities and thicknesses across specific wavelength intervals, reaffirming the potential for strategic cell design choices.

Radiation shielding competence of SeTeSnIn chalcogenide glassy system: resistance against gamma irradiation

This paper reports the study of the high-energy radiation shielding characteristics of the STS glassy system. Further, the work investigates the effect of indium concentration on the high energy radiation shielding characteristics of the STS glassy system. For this purpose, a glassy Se78-xTe20Sn2Inx (x = 0, 2, 4, and 6) system was synthesized using a renowned melt quench technique whose density was measured through the Archimedes method. We have utilized an online platform, i.e., Phy-X/PSD software, to measure the different radiation shielding parameters of the SeTeSnIn glassy system. Several shielding parameters such as linear and mass attenuation coefficient, half value layer (HVL), mean free path (MFP), effective atomic number (Z eff ), effective electron density (N eff ), effective conductivity (C eff ), equivalent atomic number (Zeq), energy absorption build-up factor (EABF), exposure build-up factor (EBF), and fast neutron removal cross-section (FNRCS) have been measured in the energy range of 15 keV to 15 MeV.

Enhancing the performance of InGaN-based near-infrared light-emitting diodes under a weakly polarized electric field

This work presents a simulation analysis of nitride multi-quantum-well near-infrared light-emitting diodes (LEDs) with an emission wavelength of 1300 nm using Crosslight-APSYS software. The polarization electric field at the quantum wells was effectively tuned by adopting an Al0.02Ga0.19In0.79N quaternaries compound as the barrier for the In0.78GaN quantum wells, resulting in a near-zero polarization electric field. This approach significantly reduced band bending and increased the overlap of electron-hole wave functions within the quantum wells. Consequently, the internal quantum efficiency (IQE) in the nitride near-infrared LED improved, and the droop effect was significantly reduced. The Auger recombination mechanism that influences the droop effect was further analyzed. This provides an efficient approach for the development of high-performance InGaN-based near-infrared light-emitting diodes with high indium content.

A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality

This study delves into the epitaxial growth and characterization of InxGa1-xAs layers on InP substrate, a critical area in the development of high-performance III-V semiconductor devices. InxGa1-xAs is renowned for its superior electron mobility and broad spectral response, making it indispensable in applications ranging from photodetectors to quantum cascade lasers. Employing a horizontal flow reactor MOVPE (metal-organic vapor phase epitaxy) technique, we meticulously grew n-InxGa1-xAs epilayers under varying conditions to investigate the impact of indium content, growth temperature, and V/III ratio on the material's structural, optical, and electrical properties. HRXRD (High-resolution X-ray diffraction) and Hall-effect measurements provided insights into the correlation between growth parameters and epitaxial layer quality, including dislocation density and carrier mobility. Our findings highlight the delicate balance required in the growth process to optimize the InxGa1-xAs /InP structure's performance for advanced semiconductor applications. The research underscores the potential of tailored InxGa1-xAs layers to push the boundaries of current photonics and optoelectronics technologies, emphasizing the importance of growth condition optimization for enhancing device efficiency and thermal stability.

Microscopy studies of InGaN MQWs overgrown on porosified InGaN superlattice pseudo-substrates

In this study, possible origins of small V-pits observed in multiple quantum wells (MQWs) overgrown on as-grown and porosified InGaN superlattice (SL) pseudo-substrates have been investigated. Various cross-sectional transmission microscopy techniques revealed that some of the small V-pits arise from the intersection of threading defects with the sample surface, either as part of dislocation loops or trench defects. Some small V-pits without threading defects are also observed. Energy dispersive x-ray study indicates that the Indium content in the MQWs increases with the averaged porosity of the underlying template, which may either be attributed to a reduced compositional pulling effect or the low thermal conductivity of the porous layer. Furthermore, the porous structure inhibits the glide or extension of the misfit dislocations (MD) within the InGaN SL. The extra strain induced by the higher Indium content and the hindered movement of the MDs combined may explain the observed additional small V-pits present on the MQWs overgrown on the more relaxed templates.

Role of Atomicity and Interface on InOx-TiO2 Composites: Thermo-Photo Valorization of CO2.

The synthesis, physicochemical, and functional properties of composite solids resulting from the surface spread of oxidized indium species onto nanoplatelets of anatase were investigated. Both the size and the interaction between the indium- and titanium-containing components control the functional properties. In the reduction of CO2 to CO, the best samples have an indium content between ca. 2 and 5 mol % and showed an excess rate over the photo and thermo-alone processes above 33% and an energy efficiency of 1.3%. Subnanometric (monomeric and dimeric) indium species present relatively weak thermal catalytic response but strong thermo-photo promotion of the activity. A gradual change in functional properties was observed with the growth of the indium content of the solids, leading to a progressive increase of thermal activity but lower thermo-photo promotion. The study provides a well-defined structure-activity relationship rationalizing the dual thermo-photo properties of the catalysts and establishes a guide for the development of highly active and stable composite solids for the elimination and valorization of CO2.

Bidirectional UV/violet heterojunction light-emitting diode with In0.27Al0.73N alloy film as electron transport layer

In this paper, the p-GaN/n-In0.27Al0.73N heterojunction light-emitting diode (LED) was fabricated by radio frequency magnetron sputtering (RF-MS) and the electroluminescence (EL) characteristics of the p-GaN/n-In0.27Al0.73N heterojunction diode was investigated. Based on the preparation of the InXAl1-XN thin films at different substrate temperatures (Ts), the crystal structure, optical and electrical properties were investigated by XRD, SEM and other material characterization techniques. With increasing Ts, the grain size and surface morphology of the InXAl1-XN thin films change dramatically. The film has the best optical and electrical properties when the Ts is 300℃. On the basis of this, the compositional content of indium in the InXAl1-XN film was calculated to be 0.27. The heterojunction LED was fabricated on a commercial p-GaN substrate and the In0.27Al0.73N alloy film. The EL was successfully achieved at various forward and reverse voltages at room temperature and the temperature-dependent EL has been investigated. Furthermore, research is being conducted on the characteristics of the interface of p-GaN/n-In0.27Al0.73N heterojunction and the elucidation of the light-emitting mechanism of diode. The present work uses a simple and low-cost RF-MS method to fabricate UV/Violet bidirectional drive p-GaN/n-In0.27Al0.73N heterojunction LED, which provides a new reference for the fabrication of LED using InXAl1-XN alloy material.

Physical Investigations of In2O3/Porous Silicon at Different Laser Wavelengths

In this study, In2O3 thin films deposited on porous silicon using the pulsed laser deposition (PLD) method. The PSi substrate was prepared by photo electrochemical etching with the diode laser assistant. The impacts of various laser wavelengths on structural, spectroscopic, and performance characterizations were investigated. XRD revealed that the In2O3/PSi films have a polycrystalline cubic structure. The PL test showed measurements of two emission peaks related to In2O3 films (500, 463, 460 nm) and the PSi membrane (857, 852, 829 nm). The peaks at shorter wavelengths increased the energy gap from 2.4 eV to 2.69 eV. AFM results showed the surface roughness of the prepared samples were (3.78, 2.74, 2.3 nm), respectively and the root mean square (4.47, 3.26, 3.12 nm), respectively. FESEM images illustrated that the prepared samples had an average diameter size of (34.51, 25.55, 29.44 nm) with a cauliflower-like shape at 355 nm and rod-shaped particles for both 532 and 1064 nm. EDX tests were performed to figure out the elemental composition of In2O3/PSi the concentrations. The longer the laser wavelength, the higher the concentration of indium. The highest laser wavelength increased the transmission while decreasing the absorption.

Bending and reverse bending during the fabrication of novel GaAs/(In,Ga)As/GaAs core–shell nanowires monitored by in situ x-ray diffraction

We report on the fabrication of a novel design of GaAs/(In,Ga)As/GaAs radial nanowire heterostructures on a Si 111 substrate, where, for the first time, the growth of inhomogeneous shells on a lattice mismatched core results in straight nanowires instead of bent. Nanowire bending caused by axial tensile strain induced by the (In,Ga)As shell on the GaAs core is reversed by axial compressive strain caused by the GaAs outer shell on the (In,Ga)As shell. Progressive nanowire bending and reverse bending in addition to the axial strain evolution during the two processes are accessed by in situ by x-ray diffraction. The diameter of the core, thicknesses of the shells, as well as the indium concentration and distribution within the (In,Ga)As quantum well are revealed by 2D energy dispersive x-ray spectroscopy using a transmission electron microscope. Shell(s) growth on one side of the core without substrate rotation results in planar-like radial heterostructures in the form of free standing straight nanowires.

Role of arsenic vapor pressure in transformation of InAs quantum dots during overgrowth by a GaAs capping layer

The results of a study of the optical properties of self-assembled InAs/GaAs (001) quantum dots (QDs) overgrown under different arsenic pressures, obtained using photoluminescence (PL) and PL excitation spectroscopy, are presented. If the arsenic pressure during overgrowth is low (2.5·10−6 Pa), a series of pronounced QD-related peaks is observed in the 77-K PL spectrum over a 200-meV broad spectral interval with the brightest one located at 1.37 eV. With increasing arsenic pressure, the PL spectrum becomes smoother and is red-shifted to 1.16 eV at 1·10−5 Pa and to 1.26 eV at 3·10−5 Pa. We explain this behavior in terms of enhanced QD decomposition, the mechanism of which is strongly dependent on the arsenic deficiency or excess during the overgrowth process, determined by the arsenic pressure. Supported by the analysis of the wetting layer luminescence, we also conclude that the total indium content in the QD layer decreases with decreasing arsenic pressure during the overgrowth. This study reveals an essential role of the arsenic pressure in the overgrowth of InAs QDs.

Indium partitioning between silicate melts and magmatic fluids: implications for indium ore genesis and the tracing of magma degassing

Most of the global indium resources are from deposits associated with felsic rocks. Considering that the indium concentration in the average upper crust is extremely low, magmatic-hydrothermal processes play a critical role in the enrichment and mineralization of indium. However, the extraction efficiency of indium by magmatic fluids remains unclear. We performed experiments at 800 °C, 150 MPa and oxygen fugacity of Ni-NiO buffer to determine the partition coefficient of indium between aqueous fluids and granitic melts (DInf/m). To counteract the rapid loss of indium into the noble metal container wall, the DInf/m were obtained by the method of local equilibrium between microscopic-sized fluid bubbles and surrounding silicate melt. The results show that indium has the highest fluid-melt partition coefficients of all metals investigated so far. At a constant aluminum saturation index (ASI = 1.07–1.12), DInf/m correlates linearly with the total Cl concentration in the coexisting fluid (mCltotal), increasing from 61 ± 11 (1σ) at mCltotal = 1.0 mol/kg H2O to 895 ± 105 (1σ) at mCltotal = 16 mol/kg H2O. When the HCl concentration in the solution increases from 0.13 to 0.49 mol/kg H2O at a fixed mCltotal = 2 mol/kg H2O, DInf/m increases parabolically from 129 ± 21 to 320 ± 24. The observed partitioning data suggest that indium was dominantly present as In(OH)2Cl in the low-HCl and In(OH)Cl2 in high-HCl aqueous fluid at the experimental conditions. Numerical modeling indicates that the extraction efficiency of indium from S-type felsic magmas is very high (>85 %) and magmatic fluids may be the major source of indium for most indium deposits. Due to the high DInf/m values, fluid saturation and exsolution result in a sharp drop of indium concentration in both the residual melt and crystallized minerals, which makes the indium concentration in whole rock and minerals an indicator of fluid exsolution.