Consideration Of Recombination Research Articles

Recombination in Semiconductors: Appearance of Nonequilibrium Carriers due to Injection or Redistribution in the Sample

It is shown that the traditional approach for consideration of recombination under the condition of a steady-state current in the absence of external carrier generation is internally contradictory. Sometimes the approach leads to obviously incorrect results. Such situations are demonstrated and a new method for consideration of recombination is proposed.

Determination of the deposition depth of a p-n junction with an electronic probe

A method for determining the deposition depth of a p-n junction is described, which uses comparison of calculated and experimentally measured dependence of short circuit induced current on the energy of bombarding electrons. A formula for induced current is derived with consideration of recombination on the irradiated surface. Calculations are performed to permit study of the character of the short circuit induced current as a function of electron energy in structures with different recombination parameters and different p-n junction deposition depths.