Conducting Surface States Research Articles

Efficient Permeable Monolithic Hybrid Tribo-Piezo-Electromagnetic Nanogenerator Based on Topological-Insulator-Composite.

Escalating energy demands of self-independent on-skin/wearable electronics impose challenges on corresponding power sources to offer greater power density, permeability, and stretchability. Here, a high-efficient breathable and stretchable monolithic hybrid triboelectric-piezoelectric-electromagnetic nanogenerator-based electronic skin (TPEG-skin) is reported via sandwiching a liquid metal mesh with two-layer topological insulator-piezoelectric polymer composite nanofibers. TPEG-skin concurrently extracts biomechanical energy (from body motions) and electromagnetic radiations (from adjacent appliances), operating as epidermal power sources and whole-body self-powered sensors. Topological insulators with conductive surface states supply notably enhanced triboelectric and piezoelectric effects, endowing TPEG-skin with a 288V output voltage (10 N, 4Hz), ∼3 times that of state-of-the-art devices. Liquid metal meshes serve as breathable electrodes and extract ambient electromagnetic pollution (±60V, ±1.6µA cm-2). TPEG-skin implements self-powered physiological and body motion monitoring and system-level human-machine interactions. This study provides compatible energy strategies for on-skin/wearable electronics with high power density, monolithic device integration, and multifunctionality.

Топологические изоляторы в электронных и спинтронных устройствах

Background: Topological insulators (TIs) are materials with distinctive features, including insulating interiors and conducting surface states protected by time-reversal symmetry. These features make TIs extremely promising for electrical and spintronic device applications, where manipulating electron spin without charge transfer is advantageous. Objective: This study aims to investigate of TIs to improve the performance and efficiency of electrical and spintronic devices. We look at the special qualities of TIs that may be used to improve device functionality, such as reduced power consumption and higher operational speed. Methods: To investigate electron transport behaviour on the surfaces of different TIs, we used a mix of quantum mechanical models and experimental settings. Devices based on bismuth telluride (Bi2Te3) and thallium arsenide (TlAs) were built to test their performance in real-world applications. Results: TI devices showed considerable gains in spin transport efficiency and thermal stability compared to conventional materials. Spintronic devices based on TIs demonstrated a 50% reduction in energy usage and a 30% improvement in data processing speed. Conclusion: Including topological insulators in electrical and spintronic devices offers a promising path to more efficient and speedier technologies. Future research should concentrate on the scalable integration of TIs into commercial devices and the discovery of novel materials with topological insulating characteristic.

High‐Index and Low‐Loss Topological Insulators for Mid‐Infrared Nanophotonics: Bismuth and Antimony Chalcogenides

AbstractTopological insulators generally have dielectric bulk and conductive surface states. Consequently, some of these materials are shown to support polaritonic modes at visible and THz frequencies. At the same time, the optical properties of topological insulators in the mid‐infrared (mid‐IR) remain poorly investigated. Here, near‐field imaging is employed to probe the mid‐IR response from the exfoliated flakes of bismuth (Bi)/selenide (Se)/telluride (Te)/antimony (Sb) crystals with varying stoichiometry – Bi2Se3, Bi2Te2Se, and Bi1.5Sb0.5Te1.7Se1.3 – in pristine form as well as covered by thin flakes of hexagonal boron nitride (hBN) is employed. Contrary to theoretical expectations, all three materials exhibit a dielectric response with a high refractive index and with a loss below the experimental detection limit. Particularly, the near‐field mapping of propagating phonon‐polaritons in hBN demonstrates that all three van der Waals crystals with different stoichiometry act as a practically lossless dielectric substrate with an ultra‐high refractive index of up to 7.5 in Bi2Te2Se. Such a unique dielectric crystal will be of great advantage for numerous nanophotonic applications in the mid‐IR.

Aberrant photoelectric effect in the topological insulator/n-GaN heterojunction (Bi2Te3/n-GaN) under unpolarized illumination.

A topological insulator has a unique graphene-like Dirac cone conducting surface state, which is excellent for broadband absorption and photodetector applications. Experimental investigations on the Bi2Te3/n-GaN heterojunction exhibited an aberrant photoelectric effect under the influence of unpolarized light. Transport measurements of the Bi2Te3/n-GaN heterojunction revealed a negative photoconductance, with a sudden increase in resistance. This was consistent with the applied range of wavelength and power used for incident light while it was contrary to the usual gap-state transition model, which states that a negative conductance is due to the trapping of charge carriers. The observed aberrant photoelectric effect seen in Bi2Te3/n-GaN heterojunction devices was due to the polycrystalline nature of the Bi2Te3 topological insulator film, where the incident photon-induced bandgap in the Dirac cone surface state resulted in a negative photoelectric effect. This phenomenon opens the possibility for applications in highly sensitive photodetectors and non-volatile memories, along with employing the bandgap-opening concept in retinomorphic devices.

(Invited) Thermoelectric Transport in Nanostructured 3D Topological Insulators and Stacked 2D Materials / Ferecrystals

Research in thermoelectric (TE) quantum structures was greatly propelled by the pre[1]diction in the early 1990s of a significant boost in TE efficiency by quantum size effects. Recently, research interest has shifted from quantum size effects in conventional semiconductors toward new types of quantum materials (e.g., topological insulators [TIs], Weyl and Dirac semimetals) characterized by their nontrivial electronic topology. Bi2Te3, Sb2Te3, and Bi2Se3, established TE materials, are also TIs exhibiting a bulk bandgap and highly conductive and robust gapless surface states. The signature of the nontrivial electronic band structure on the TE transport properties can be best verified in transport experiments using nanowires and thin films. However, even in nanograined bulk, the typical peculiarities in the transport properties of TIs can be seen. The signature of TI surface states on the thermoelectric properties of nanowire model systems will be discuss in depth and how these states can be modified by chemical modifications and in the vicinity of magnetic insulators.In the second part, we will report a different material class of stacked 2D materials based on metal monochalcogenides (MMCs), topological insulators and non-van der Waals (nvW) 2D Materials called ferecrystals via atomic layer deposition (ALD). The ferecrystals can be tailored to exhibit unusual properties such as low thermal conductivity or electronic or magnetic properties. The electronic properties of the 2D materials are modified by the interactions between the interwoven layered and non-layered materials. We have developed ferecrystal combinations, where the 2D material is the electronically active or in-active layer by selection of the bandgap for each layer. Figure 1

A potential candidate material for quantum anomalous Hall effect: Heterostructures of ferromagnetic insulator and graphene

Discovery of novel topological materials have motivated tremendous research owing to their peculiar energy bands and potential fundamental and practical prospects. In contrast to conventional nonmagnetic topological insulators (TIs), new type of magnetic TIs, such as Cr2Ge2Te6, revealed a quantum Hall effect (QHE) at zero magnetic field. The phenomenon is called anomalous QHE. In the magnetic TIs showing QAHE, the interaction of spontaneous magnetism with conducting surface states opens an insulating band gap at the Dirac points by breaking the time-reversal symmetry. In contrast to inducing the phenomenon of QHE through spontaneous magnetism by chemical doping, the alternative suitable option is the heterostructure engineering of 2D Dirac materials with semiconductor magnetic insulators. In this study, we first time investigate the phenomenon of QAHE in semiconducting magnetic insulator Cr2Ge2Te6 by proposing its bulk and monolayer heterostructure with graphene by the first-principles calculations. We employed density functional theory to compute electronic properties of Cr2Ge2Te6 and its heterostructure with graphene. The exchange-correlation in view of meta-generalized gradient approximations with tight binding method reveal the results for bulk Cr2Ge2Te6 are close to the experimental values. The maximum achieved energy gap in the heterostructure is up to 5 meV.

Nondegenerate Integer Quantum Hall Effect from Topological Surface States in Ag2Te Nanoplates.

The quantum Hall effect is one of the exclusive properties displayed by Dirac Fermions in topological insulators, which propagates along the chiral edge state and gives rise to quantized electron transport. However, the quantum Hall effect formed by the nondegenerate Dirac surface states has been elusive so far. Here, we demonstrate the nondegenerate integer quantum Hall effect from the topological surface states in three-dimensional (3D) topological insulator β-Ag2Te nanostructures. Surface-state dominant conductance renders quantum Hall conductance plateaus with a step of e2/h, along with typical thermopower behaviors of two-dimensional (2D) massless Dirac electrons. The 2D nature of the topological surface states is proven by the electrical and thermal transport responses under tilted magnetic fields. Moreover, the degeneracy of the surface states is removed by structure inversion asymmetry (SIA). The evidenced SIA-induced nondegenerate integer quantum Hall effect in low-symmetry β-Ag2Te has implications for both fundamental study and the realization of topological magneto-electric effects.

Strong Self‐Enhancement of Optical Nonlinearity in a Topological Insulator with Generation of Tamm State

AbstractAs new states of matter currently attracting broad attention in the optics field, topological insulators (TIs) present topologically‐protected conducting surface states surrounding insulating bulk and prominent third‐order optical nonlinearities in an ultrawide frequency range. Optical frequency conversion in TI nanofilms plays a crucial role in TI nonlinear optical functionalities, whose enhancement is in demand for high‐performance devices. Herein, an optical Tamm state is observed between the Sb2Te3 TI nanofilm and 1D photonic crystal (PC) with a self‐enhancement behavior of optical nonlinearity in the TI nanofilm. The experiments demonstrate that there exists a distinct reflection dip in the forbidden band of the PC, which is attributed to the appearance of Tamm state in the TI/PC structure. The wavelength of the TI‐based Tamm state possesses a nearly linear redshift with increasing TI film thickness. The measurements are in excellent agreement with simulation and theoretical calculations. Moreover, a strong third‐harmonic generation reinforcement of 30‐fold is experimentally observed in a 90 nm Sb2Te3 film, which stems from the field enhancement induced by the TI self‐excited Tamm state at the fundamental frequency. This work opens a new door for generation of optical Tamm states and applications of TIs in high‐efficiency nonlinear optical functionalities, especially frequency conversion.

Topological transport properties of highly oriented Bi2Te3 thin film deposited by sputtering

Topological insulators (TIs) are the promising materials for next-generation technology due to their exotic features such as spin momentum locking, conducting surface states, etc. However, the high-quality growth of TIs by sputtering technique, which is one of the foremost industrial requirements, is extremely challenging. Also, the demonstration of simple investigation protocols to characterize topological properties of TIs using electron-transport methods is highly desirable. Here, we report the quantitative investigation of non-trivial parameters employing magnetotransport measurements on a prototypical highly textured Bi2Te3 TI thin film prepared by sputtering. Through the systematic analyses of the temperature and magnetic field dependent resistivity, all topological parameters associated with TIs, such as coherency factor , Berry phase (), mass term (m), the dephasing parameter (p), slope of temperature dependent conductivity correction () and the surface state penetration depth (λ) are estimated by using the modified ‘Hikami–Larkin–Nagaoka’, ‘Lu–Shen’ and ‘Altshuler–Aronov’ models. The obtained values of topological parameters are well comparable to those reported on molecular beam epitaxy grown TIs. The epitaxial growth of Bi2Te3 film using sputtering, and investigation of the non-trivial topological states from its electron-transport behavior are important for their fundamental understanding and technological applications.

Vacancy‐Defect Topological Insulators Bi2Te3−x Embedded in N and B Co‐Doped 1D Carbon Nanorods Using Ionic Liquid Dopants for Kinetics‐Enhanced Li–S Batteries

AbstractLithium–sulfur (Li–S) batteries are hindered by the shuttle effect and the sluggish redox kinetics of polysulfides. In this study, topological insulators (TIs) Bi2Te3−x with abundant Te vacancies embedded in N and B co‐doped carbon nanorods (Bi2Te3−x@NBCNs) are synthesized and used as sulfur host composites for high‐performance Li–S batteries. Bi2Te3−x@NBCNs effectively enhance the intrinsic conductivity, strengthened the chemical affinity, and accelerated the redox kinetics of polysulfides. 1D carbon nanorods with N and B co‐doped heteroatoms endowed with abundant polar sites improve the chemical affinity of polysulfides, while the embedded Bi2Te3−x nanoparticles further promote the nucleation and electrodeposition of Li2S2/Li2S. In situ Raman spectroscopy confirms that Bi2Te3−x@NBCNs effectively reduced cathode‐side accumulation of polysulfides and suppressed the shuttle effect. Owing to the extraordinary synergistic effects of rich heteroatom polar sites and conductive topological surface states, Bi2Te3−x@NBCN‐based cells exhibit a high initial specific capacity of 1264 mAh g−1 at 0.2 C and ultra‐long lifetime (>1000 cycles, with a degradation rate of 0.02% per cycle at 1.0 C). The fundamental insights offered by this work are likely to enable improvement of the electrochemical performance of Li–S batteries based on TI materials.

First Principles Computation of New Topological B2X2Zn (X = Ir, Rh, Co) Compounds

Recent attempts at searching for new materials have revealed a large class of materials that show topological behaviors with unusual physical properties and potential applications leading to enthralling discoveries both theoretically and experimentally. We computationally predict new three-dimensional topological compounds of space group 139(I/4mmm). After conducting a full volume optimization process by allowing the rearrangement of atomic positions and lattice parameters, the first-principles calculation with a generalized gradient approximation is utilized to identify multiple Dirac-type crossings around X and P symmetric points near Fermi energy. Importantly, the band inversion at point P is recognized. Further, we investigate the compound for topological crystalline insulating behavior by conducting surface state calculation and by investigating gapping behavior by increasing lattice parameters. Additionally, we perform formation energy, elastic properties, and phonon modes calculations to verify the structural, mechanical, and dynamical stability of the compounds. Therefore, we suggest compounds for further investigation and experimental realization.

Observation of the Superconducting Proximity Effect from Surface States in SmB_{6}/YB_{6} Thin Film Heterostructures via Terahertz Spectroscopy.

The ac conduction of epitaxially grown SmB_{6} thin films and superconducting heterostructures of SmB_{6}/YB_{6} are investigated via time-domain terahertz spectroscopy. A two-channel model of thickness-dependent bulk states and thickness-independent surface states accurately describes the measured conductance of bare SmB_{6} thin films, demonstrating the presence of surface states in SmB_{6}. While the observed reductions in the simultaneously measured superconducting gap, transition temperature, and superfluid density of SmB_{6}/YB_{6} heterostructures relative to bare YB_{6} indicate the penetration of proximity-induced superconductivity into the SmB_{6} overlayer; the corresponding SmB_{6}-thickness independence between different heterostructures indicates that the induced superconductivity is predominantly confined to the interface surface state of the SmB_{6}. This study demonstrates the ability of terahertz spectroscopy to probe proximity-induced superconductivity at an interface buried within a heterostructure, and our results show that SmB_{6} behaves as a predominantly insulating bulk surrounded by conducting surface states in both the normal and induced-superconducting states in both terahertz and dc responses, which is consistent with the topological Kondo insulator picture.

Structural phase transition and transport properties in topological material candidate NaZn4As3

We report a comprehensive study on a layered-structure compound of NaZn4As3, which has been predicted to be an ideal topological semimetal (TSM) candidate. It is found that NaZn4As3 undergoes a structural transformation from high temperature rhombohedral to a low temperature monoclinic phase. The electric resistivity exhibits a metal-to-insulator-like transition at around 100 K, and then develops a plateau at low temperature, which might be related to the protected topologically conducting surface states. Our first-principles calculation confirms further that NaZn4As3 is a topological insulator (TI) for both different phases rather than a previously proposed TSM. The Hall resistivity reveals that the hole carriers dominate the transport properties for the whole temperature range investigated. Furthermore, an obvious kink possibly associated to the structure transition has been detected in thermopower around ∼170 K. The large thermopower and moderate κ indicate that NaZn4As3 and /or its derivatives can provide a good platform for optimizing and studying the thermoelectric performance.

Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves

Recently, evidence for a conducting surface state (CSS) below 19 K was reported for the correlated d-electron small gap semiconductor FeSi. In the work reported herein, the CSS and the bulk phase of FeSi were probed via electrical resistivity ρ measurements as a function of temperature T, magnetic field B to 60 T, and pressure P to 7.6 GPa, and by means of a magnetic field-modulated microwave spectroscopy (MFMMS) technique. The properties of FeSi were also compared with those of the Kondo insulator SmB6 to address the question of whether FeSi is a d-electron analogue of an f-electron Kondo insulator and, in addition, a "topological Kondo insulator" (TKI). The overall behavior of the magnetoresistanceof FeSi at temperatures above and below the onset temperature TS = 19 K of the CSS is similar to that of SmB6. The two energy gaps, inferred from the ρ(T) data in the semiconducting regime, increase with pressure up to about 7 GPa, followed by a drop which coincides with a sharp suppression of TS. Several studies of ρ(T) under pressure on SmB6 reveal behavior similar to that of FeSi in which the two energy gaps vanish at a critical pressure near the pressure at which TS vanishes, although the energy gaps in SmB6 initially decrease with pressure, whereas in FeSi they increase with pressure. The MFMMS measurements showed a sharp feature at TS ≈ 19 K for FeSi, which could be due to ferromagnetic ordering of the CSS. However, no such feature was observed at TS ≈ 4.5 K for SmB6.

Mechanochemical Synthesis of Sustainable Ternary and Quaternary Nanostructured Cu2SnS3, Cu2ZnSnS4, and Cu2ZnSnSe4 Chalcogenides for Thermoelectric Applications

Copper-based chalcogenides have emerged as promising thermoelectric materials due to their high thermoelectric performance, tunable transport properties, earth abundance and low toxicity. We have presented an overview of experimental results and first-principal calculations investigating the thermoelectric properties of various polymorphs of Cu2SnS3 (CTS), Cu2ZnSnS4 (CZTS), and Cu2ZnSnSe4 (CZTSe) synthesized by high-energy reactive mechanical alloying (ball milling). Of particular interest are the disordered polymorphs of these materials, which exhibit phonon-glass-electron-crystal behavior-a decoupling of electron and phonon transport properties. The interplay of cationic disorder and nanostructuring leads to ultra-low thermal conductivities while enhancing electronic transport. These beneficial transport properties are the consequence of a plethora of features, including trap states, anharmonicity, rattling, and conductive surface states, both topologically trivial and non-trivial. Based on experimental results and computational methods, this report aims to elucidate the details of the electronic and lattice transport properties, thereby confirming that the higher thermoelectric (TE) performance of disordered polymorphs is essentially due to their complex crystallographic structures. In addition, we have presented synchrotron X-ray diffraction (SR-XRD) measurements and ab initio molecular dynamics (AIMD) simulations of the root-mean-square displacement (RMSD) in these materials, confirming anharmonicity and bond inhomogeneity for disordered polymorphs.

Quantum Floquet spectra of surface and bulk state of topological insulator

Topological insulator is a new class of material, which consists of insulating bulk and conducting surface state. In this study, we investigated the behaviour of bulk and surface state of topological insulator under a high frequency electromagnetic field, produce a kind of oscillation called as Floquet oscillation. We successfully identified the classical and quantum behavior of Floquet oscillation in the prospective of collapse revival spectra. This work shows the bulk and surface states behaviour of a topological insulator with the help of Floquet and Rabi frequency and describes the dominancy of Floquet oscillation in the low energy physics. Numerical simulation has been applied for verifying the Floquet approximation.

Disorder driven variations in magnetoresistance and planar Hall effect in Bi2Te3 thin films

The degenerately doped sesquichalcogenide Bi2Te3, a well-known thermoelectric material, has attracted much attention in recent years as a topological insulator in which conducting surface states lead to exotic electronic transport. Here we report the observation of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) in polycrystalline thin films of Bi2Te3 over a broad range of temperature and magnetic field strength. The values of AMR, PHE and the Hall mobility (μH) are compared with results of similar measurements on single crystals and epitaxial films of Bi2Te3, where these properties are understood in the framework of electronic transport in the topologically protected conducting surface states. Our textured polycrystalline films show a robust metallic character with a carrier density (ns) and mobility μH of 9×1020 cm−3 and 16.7 cm2V−1s−1 respectively. This carrier density is higher and the mobility lower by an order of magnitude compared to the reported values of ns and μH in epitaxial films and single crystals. However, we see a comparable AMR and PHE in our films for which the concept of conducting surface states is ill-defined due to their polycrystallinity and disordered structure. We suggest that an anisotropic backscattering of charge carriers in the strongly spin – orbit coupled electronic states of this heavy-metal-based non-magnetic compound may lead to the measured resistivity anisotropy. The observation of AMR and PHE in polycrystalline films may be important for scalable production of Bi2Te3 based AMR and PHE sensors of magnetic fields.

Two dimensional LiMgAs: A topological quantum catalyst for hydrogen evolution reaction

Quantum materials, such as topological insulators (TIs), are promising due to diverse applications of their robust surface/edge states in the bulk three-dimensional (3D) and two-dimensional (2D) regimes. Such conducting surface states in 3D systems host “electron baths,” which are known to facilitate catalysis. However, the analogous effects in 2D scenarios wherein conducting helical edge states leading to Fermionic accumulation have been scarcely addressed. Using first-principles calculations, we demonstrate that the conducting edge states in 2D TIs, such as LiMgAs, can be exploited to facilitate excellent catalytic response toward hydrogen evolution reactions. The Gibbs free energy in such cases was found to be as low as −0.02 eV, which is quite superior compared to other materials reported in the literature. The concept presented herein can be extended to other well-known 2D TIs and used to realize unconventional topological quantum catalysts for ultra-high performance and efficient catalytic applications.

Contribution of both bulk and surface states on photothermoelectric transport in epitaxial Bi2Se3 thin films

Probing the surface states in Bi2Se3 via electronic transport measurements is difficult due to the significantly larger numbers of bulk carriers. Herein, we report the contribution of both bulk and surface states on the measured photocurrent at room temperature and the electrical transport measurements at low temperatures in an epitaxial thin film of intrinsic Bi2Se3 capped with a high K dielectric, Al2O3. The measured photocurrent continuously increases when the gate voltage is swept toward the negative side from 10 to −10 V, indicating the movement of the Fermi level below the conduction band edge. Moreover, the contribution of the surface state conduction increases when the Fermi level moves inside the bandgap toward the Dirac point. Furthermore, the measured Seebeck coefficient (S) continuously increases with sweeping gate voltage from 10 to −10 V. Similar correlations of the photocurrent and S value with the gate voltage illustrate the contribution of the photothermoelectric effect due to the conduction of both bulk and surface states. Additionally, the ambipolar charge transport was observed in the electrical measurement at 32 K for the four-probe configuration. The ambipolar charge transport is possibly indicative of surface state transport.

Band structure and polarization effects in photothermoelectric spectroscopy of a Bi2Se3 device

Bi2Se3 is a prototypical topological insulator, which has a small bandgap (∼0.3 eV) and topologically protected conducting surface states. This material exhibits quite strong thermoelectric effects. Here, we show in a mechanically exfoliated thick (∼100 nm) nanoflake device that we can measure the energy dependent optical absorption through the photothermoelectric effect. Spectral signatures are seen for a number of optical transitions between the valence and conduction bands, including a broad peak at 1.5 eV, which is likely dominated by bulk band-to-band optical transitions but is at the same energy as the well-known optical transition between the two topologically protected conducting surface states. We also observe a surprising linear polarization dependence in the response of the device that reflects the influence of the metal contacts.