Conductivity Type Research Articles

Dual efficacy of potassium-doping in perovskite solar cells: Reducing hysteresis and boosting open-circuit voltage

The incorporation of potassium into perovskite solar cells (PSCs) has been empirically validated to mitigate hysteresis phenomena and boost the power conversion efficiency (PCE). However, the doping mechanism of potassium ions in the perovskite film and their effect on photocarrier recombination remains a topic of debate. Here, we grew doped MAPbI3: K single crystals by inverse temperature crystallization using KI as a dopant, and then perovskite thin films were spin-coated with dissolved MAPbI3: K crystals as a precursor. The doped MAPbI3: K perovskite films exhibit better crystal quality with large columnar grains and lower defect density. Employing Hall effect, ultraviolet photoelectron spectroscopy, and Kelvin probe force microscopy measurements, we definitively demonstrate that K-doping transforms the conductivity type of the perovskite film from a marginally N-type to a distinct P-type semiconductor. Furthermore, this doping strategy induces a concurrent downward shift in both the conduction band minimum and valence band maximum. As a result, the PCE of the PSCs increases from 15.15% to an impressive 20.66%, and the J–V curve hysteresis almost disappears. Additionally, theoretical simulations using SCAPS-1D software reveal a profound modification in the device's energy band diagram after K+-doping. Specifically, the energy level offset between the perovskite layer and the electron transport layer diminishes from 0.24 to 0.14 eV, with a result of bigger quasi-Fermi energy level splitting. This, in turn, elevates the open-circuit voltage (Voc) of the doped perovskite solar cell, underscoring the profound impact of potassium doping on enhancing PSC performance.

Influence of Conductive Filler Types on the Ratio of Reflection and Absorption Properties in Cement-Based EMI Shielding Composites

The growing importance of electromagnetic interference (EMI) shielding composites in civil engineering has garnered increasing attention. Conductive cement-based composites, incorporating various conductive fillers, such as carbon nanotubes (CNTs), carbon fibers (CFs), and graphene nanoplatelets (GNPs), provide effective solutions due to their high electrical conductivity. While previous studies have primarily focused on improving the overall shielding effectiveness, this research emphasizes balancing the reflection and absorption properties. The experimental results demonstrate an EMI shielding performance exceeding 50 dB, revealing that filler size (nano, micro, or macro) and shape (platelet or fiber) significantly influence both reflection and absorption characteristics. Based on a comprehensive evaluation of the shielding properties, this study highlights the need to consider factors such as reflection versus absorption losses and filler shape or type when optimizing filler content to develop effective cement-based EMI shielding composites.

Characterization of ZnSe Thin Film Electrodeposited at Room Temperature in Aqueous Medium without Complexing Agents

This study includes a simple electrodeposition technique for the fabrication of ZnSe thin film at room temperature and in an aqueous medium without additional complexing agents. Comprehensive analysis of the optical, structural, and morphological characteristics of the ZnSe thin film electrodeposited onto an ITO substrate was conducted using UV-Vis spectrometry, X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy (FT-IR), and field emission–scanning electron microscopy (FE–SEM). Furthermore, the photoelectrochemical properties were evaluated through current-time (I-t) measurements and electrochemical impedance spectroscopy (EIS) under light on/off conditions. Mott-Schottky analysis was also performed to determine the conductivity type, carrier concentration, and flat band potential of the ZnSe thin film. Structural investigations revealed that the ZnSe thin film has a hexagonal structure, the longitudinal optical (LO) phonon mode, stretching and bending vibration modes of Zn-Se. The carrier type of the ZnSe thin film was identified as n- type semiconductor and photoelectrochemical measurements exhibited a photoresponse under the light illumination

Hard Copper Boride with Exceptional Conductivity.

Copper and boron seldom engage in reaction at ambient pressure. The few reports on copper-doped boron compounds that exist in the literature often lack definitive stoichiometry. Here, we report successful synthesis of Cu_{2-δ}B_{25} single crystals (δ∼0.03, indicating Cu understoichiometry) via a high-pressure melting method using copper and β-rhombohedral boron as precursors. Crystals thus synthesized are characterized by a tetragonal boron sublattice, within which Cu atoms are either partially or fully situated at different interstices between B_{12} icosahedra. The crystals possess a high Vickers hardness of 26.5GPa and an unusually high electrical conductivity of 1.19×10^{5} S/m-the highest conductivity among the icosahedron-based borides. Hall measurements reveal a notable p-n conduction type transition around 30GPa. This transition, alongside the remarkable conductivity, is potentially modulated by the copper content and its valence states within the structure. The synthesis of Cu_{2-δ}B_{25} not only broadens the spectrum of hard materials but also opens new avenues for innovative modulation of electronic properties in boron-rich compounds, with promising technological implications.

Finite automated system to design a high efficiency LLC resonant converter system for 3 kW. PV solar array

A combination of electrical circuit design and the Finite Automation model leads to improved efficiency in terms of memory usage, computation time, and overall performance. LLC resonant converters are known for their high efficiency and ability to convert DC voltage from solar panels into the desired AC voltage for grid-tied or off-grid PV systems. However, designing, testing, and implementing LLC in a PV system requires careful consideration of various factors, including voltage and current requirements, resonant frequency, and compliance with standards and regulations. Eight cases are taken for this purpose with a special case of a 3kW-PV module. The major parameters for the LLC resonant Converter were 480-500V. as output voltage for 36-40V. input voltage range with a 39V. nominal voltage. The calculated coefficients for these values were as follows: A = C = 7.29, B = -50.58, D = -0.25, and E = -11. Combining LLC circuit design with FA, it is providing 94.5 % efficiency through selecting precise parameters that minimized overall calculated losses such as conductive and switching types. The right path and accepted words for different cases are given to provide several solutions with the correct path of design. ZVS and ZCS have been obtained through precise selection process of phase shift between Half Bridge of LLC circuit achieved by this design.

Dopant compensation in component-dependent self-doped Cs2SnI6 thin films grown with PLD at room temperature

Tetravalent tin (Sn4+)-based inorganic perovskite semiconductors like Cs2SnI6 are expected to replace lead-based perovskite counterparts due to advantages such as structural stability and environmental friendliness. In this paper, we reported the dopant compensation effect in the component-dependent self-doped (111)-oriented Cs2SnI6 thin films grown with pulsed laser deposition (PLD) at room temperature. The films were grown on (100)-SrTiO3 (STO) substrates at room temperature by PLD. Hall results of the Cs2SnI6 films with different components realizing by controlling the ratio of SnI4/CsI in the targets demonstrate a clear change of conductivity type from N-type to P-type, while the carrier concentration decreases from 1018 to 1013 and accordingly the film resistivity increases significantly from 3.8 to 2506 Ω cm. The defect-related optical fingerprints of Cs2SnI6 films were also investigated with temperature-dependent photoluminescence spectroscopy. At low temperatures of 10 K, the Cs2SnI6 films exhibit donor-bound (D0X) and donor-acceptor pair (DAP) emission, respectively, due to the self-doping effect. These results indicate that controlling the composition of the PLD target is a powerful way to tune the electrical properties of Cs2SnI6 films for possible applications in solar cells or X-ray detectors.

Study of Near Band Edge Emission Spectra and Conductivity Transformation in Fe‐Doped Cadmium Telluride Nanoparticles for the Device Applications

AbstractThe research work discussed here explains the near band edge emission and conductivity transformation of the Fe‐doped CdTe nanoparticles synthesized by hydrothermal method by using an autoclave. The size of the undoped CdTe nanoparticles is found to be 5.48, 8.45, 9.40, and 14.79 nm, respectively for the nanoparticles collected at 15, 30, 45, and 60 minutes of duration of the synthesis. Whereas for the Fe‐doped CdTe nanoparticles, the size is found to be 12.81, 16.9, and 18.5 nm, respectively for the 10%, 20%, and 30% Fe concentrations as doping elements in CdTe nanoparticles. The XPS spectra clearly show the successful doping of Fe in the CdTe QDs and also the orbital state of Fe in CdTe. The EDAX spectra is taken to trace the elements present in the synthesized nanoparticles. From the UV–vis absorption spectrum, the band gap is found to decrease when doped with Fe in different concentrations. Also, an appreciable blue shift is found in the as synthesized undoped and Fe‐doped CdTe NPs. A near band edge emission property is observed for the Fe‐doped CdTe NPs when doped with different Fe concentrations. The van der Pauw Hall measurement technique is employed to study the electrical properties such as conductivity, carrier concentration, mobility, and Hall coefficient of the undoped and Fe‐doped CdTe nanoparticles. The consistent p‐type conductivity is observed for the undoped CdTe nanoparticles till the time duration of 45 minutes of synthesis. When doped with Fe in 30% concentration, the type of conductivity is found to transform from p‐type to n‐type. The luminescence property between 450 and 500 nm makes these materials suitable for device applications like light‐emitting diodes. Also, the study of Hall measurement here explains the application of these materials as photovoltaic cells.

The Thermal Stability and Photoluminescence of ZnSeO3 Nanocrystals Chemically Synthesized into SiO2/Si Track Templates

We report the effect of high-temperature treatment on the structure and photoluminescence of zinc selenite nanocrystals (ZnSeO3) deposited into SiO2/Si track templates. The templates were formed via irradiation with Xe ions (200 MeV, 108 ions/cm2) followed by etching in HF solution. ZnSeO3 nanocrystals were obtained via chemical deposition from the aqueous solution of ZnCl2 and SeO2 as Zn-, Se- and O-precursors. To estimate the thermal stability of the deposited precipitates, heat treatment was carried out at 800 and 1000 °C for 60 min in a vacuum environment. Scanning electron microscopy (SEM), X-ray diffractometry (XRD), photoluminescence (PL) spectroscopy, and electrical measurements were used for the characterization of ZnSeO3/SiO2nanoporous/Si nanocomposites. Thermal treatment of the synthesized nanocomposites resulted in structural transformations with the formation of ZnSe and ZnO phases while the content of the ZnSeO3 phase decreased. For the as-deposited and annealed precipitates, an emission in the range of (400 to 600) nm was observed. PL spectra were approximated by four Gaussian curves with maxima at ~550 nm (2.2 eV), 488 nm (2.54 eV), ~440 nm (2.82 eV), and 410 nm (3.03 eV). Annealing resulted in a decrease in PL intensity that was possibly due to the weight loss of the deposited substance during high-temperature treatment. The redistribution of maxima intensities after annealing was also observed with an increase in blue and violet emissions. The origin of the observed PL is discussed. The I–V curve analysis revealed an electronic type of conductivity for the ZnSeO3(NCs)/SiO2nanoporous/Si structure. The values of the specific conductivity were calculated within the percolation model. The sample annealed at 800 °C showed the highest specific conductivity of 8.5 × 10−6 Ohm−1·cm−1.

Effect of the solder conductive particles and substrate widths on the current carrying capability for flex-on-board (FOB) assembly

PurposeThe study aims to ascertain the influence of solder conductive particle types and substrate widths on the current carrying capability of flex-on-board (FOB) assemblies. By comparing Sn58Bi and SAC305 particles and varying substrate widths, the research sought to provide insights into the stability and performance of solder joints under different scenarios, particularly in high-power applications.Design/methodology/approachThe study used a comprehensive design/methodology, encompassing the investigation of solder conductive particle types (Sn58Bi and SAC305) and substrate widths on the current carrying capability of FOB assembly. Stable solder joints were obtained by manipulating the curing speed of anisotropic conductive films for both particle types. Various tests were conducted, including current carrying capability assessments under differing conditions.FindingsThe study revealed that larger substrate widths yielded higher current carrying capability due to increased contact area and reduced contact resistance. Notably, solder joints remained stable beyond the solder melting temperature due to encapsulation by cured epoxy resin. SAC305 solder joints exhibited superior current carrying capability over Sn58Bi in continuous high-voltage conditions. The results emphasized the stability of SAC305 solder joints and their suitability for robust interconnections in high-power FOB assemblies.Originality/valueThis study contributes by offering a comprehensive assessment of the impact of solder particle types and substrate widths on solder joint performance in FOB assemblies. The finding that SAC305 joints outperform Sn58Bi under continuous high-voltage conditions adds significant value. Moreover, the observation of stable solder joints beyond solder melting temperature due to resin encapsulation introduces a novel aspect to solder joint reliability. These insights provide valuable guidance for designing robust and high-performance interconnections in demanding applications.

Influence of the constraints associated with the numerical game situations on the technical-tactical actions of U-11 football players in Spain

The aim of the present study was to analyse the influence of the constraints led approach (CLA) systems, such as the playing space, the number of players and the numerical game situations (superiority, equality and numerical inferiority) on the technical-tactical actions of U-11 players in small-sided games (SSGs). A case study was developed where two of the CLA constraint systems were applied on three SSG where the dimensions of the game space were modified (SSG1: 160 m2 ; SSG2 and SSG3: 155 m2 ) and the numerical game situation against the opposing team (SSG1: equality; SSG2 and SSG3: superiority/inferiority). The study sample consisted of U-11 players (n = 8) competing at federated level in Spain (10.25 ± 0.45 years; 2.21 ± 0.61 years of experience). The results of this study show an very strong degree of association between the game modalities and the way of obtaining the ball (2Ln(BFp10) = 10.06) and a strong association between the game modalities and the zone of origin of the ball (2 Ln(BFp10) = 6.02). It should be noted that a positive association was found between games modes and ball height in obtaining the ball (2Ln(BFp10) = 4.06); type of conduction (2Ln(BFp10) = 5.88); technical action (2Ln(BFp10)= 2.32) and efficiency (2Ln(BFp10) = 4.04). These data can help coaches to optimize the training process of young players by modifying the training tasks based on the constraint systems proposed in this study.

Prevalence of hearing loss among patients attending the private otolaryngology clinic, Ramadi city, Anbar, Iraq

BackgroundHearing loss is a common problem worldwide with a global prevalence of 20%. There is no local relevant study from Iraq about the prevalence of hearing loss.ObjectiveTo assess the prevalence of hearing loss among patients attending the otolaryngology clinic, Ramadi city, Iraq.MethodThis retrospective study was conducted at the otolaryngology clinic, Ramadi city, Anbar government, Iraq. Patients with hearing loss were enrolled in the current study. Data were gathered from patients record regarding the age, sex, type, side, and severity of hearing loss. Additionally, the number of cases were registered for each month during the study period.ResultsOut of 8497, there were 2165 (25.48%) patients with hearing loss. The highest number of cases was registered in April (n = 246, 11.4%). The highest age group affected was 18–60 years (n = 1125) with slight male predominance (51.64%). The main cause of hearing loss was secretary otitis media (n = 762, 35.19/5). The vast majority of cases were with conductive hearing impairment (n = 2051, 94.73%). Unilateral hearing loss (50.76%) was slightly more than bilateral one. Mild hearing loss has outnumbered (n = 1905, 88%) the other severities.ConclusionThe prevalence of hearing loss was 25.48%. Hearing loss could affect any age with slight male predominance. The majority of the cases were with conductive type and mild severity.

Interaction of Titanium Atoms with the Surface of Perfect and Defective Carbon Nanotubes

The dispersion of metal atoms over the surface of 1D and 2D carbon systems is the most affordable way to control their properties, which are attractive for many applications in electronics, power engineering, and catalysis. In this work, the features of the interaction of titanium atoms with the surface of carbon nanotubes, caused by various structural defects on these surfaces, were studied by first-principles computer simulation based on the density functional theory. Nanotubes (7, 7) and (11, 0) with similar diameters (≈1 nm) but different types of conductivity, metallic and semiconductor, respectively, were chosen for the study. Three types of defects were studied: a single vacancy, a double vacancy, and a topological defect. Two possible orientations of each type of defect relative to the tube axis were considered. We mainly used the basis of atomic-like orbitals (the SIESTA package) and in some test calculations also the basis of plane waves (the VASP package). Computational experiments have shown that the binding energy of Ti atoms with a defect-free nanotube is always lower than with defective ones, regardless of the used approximation for the exchange-correlation functional (LDA or GGA). The binding energies predicted in the LDA approximation are noticeably higher than in the GGA approximation (up to ~15% for the (7, 7) tube and up to ~50% for the (11, 0) tube). The strongest coupling occurs when the titanium atom is adsorbed on a nanotube with a single vacancy. The resulting configuration can be considered as a defect in the substitution of one carbon by a titanium atom.

Identification of the conductivity type of single-walled carbon nanotubes via dual-modulation dielectric force microscopy.

The conductivity type is one of the most fundamental transport properties of semiconductors, which is usually identified by fabricating the field-effect transistor, the Hall-effect device, etc. However, it is challenging to obtain an Ohmic contact if the sample is down to nanometer-scale because of the small size and intrinsic heterogeneity. Noncontact dielectric force microscopy (DFM) can identify the conductivity type of the sample by applying a DC gate voltage to the tip, which is effective in tuning the accumulation or depletion of charge carriers. Here, we further developed a dual-modulation DFM, which simplified the conductivity type identification from multiple scan times under different DC gate voltages to a single scan under an AC gate voltage. Taking single-walled carbon nanotubes as testing samples, the semiconducting-type sample exhibits a more significant charge carrier accumulation/depletion under each half-period of the AC gate voltage than the metallic-type sample due to the stronger rectification effect. The charge carrier accumulation or depletion of the p-type sample is opposite to that of the n-type sample at the same half-period of the AC gate voltage because of the reversed charge carrier type.

Studies on B-doping during low-temperature growth of nc-Ge thin films via PECVD to mitigate unwanted conduction characteristics from the post-deposition oxygen absorption

Post-deposition O absorption is a common issue in low-temperature grown nc-Ge films, that makes the material unstable and induces high n-type electrical conductivity ∼10−2 S cm−1. An attempt has been made to mitigate the oxygen absorption issue through B doping of the nc-Ge thin film network at a low deposition temperature of ∼220 °C, employing a conventional capacitively coupled PECVD. At a B2H6 flow rate of 3.0 sccm, the incorporation of a restricted quantity of B maintains a narrow band gap of ∼1.04 eV, significantly low conductivity of ∼6.76 ×10−7 S cm−1, activation energy ∼398 meV, and photosensitivity of 6.0. Spectroscopic studies indicated that B doping facilitated reduced O-intake in the nc-Ge matrix, possibly via passivating the grain boundary defects and dangling bonds in the amorphous matrix and inducing the preferential absorption of O atoms in the Ge–O2 configuration compared to its Ge–Ox (x < 2) counterpart. The diminished O-induced carriers and the supplied acceptor levels by the B dopants compensate for the inherent n-type carrier concentration. However, at higher B2H6 flow rates, significant B incorporation in the film matrix introduces numerous defects, degrading the crystallinity, despite increasing its p-type conductivity to 2.16 ×10−5 S cm−1 and maintaining a narrow band gap. Organized switching in the type of conductivity from the n-type to p-type ensues via gradually rising the B-dopants within the nc-Ge thin film network during its growth, which deserves attention for specific device applications.

Light B Doping by Ion Implantation into High‐Purity Heteroepitaxial Diamond

The low‐concentration boron doping is performed from 1016 to 1018 cm−3 by ion implantation into heteroepitaxially synthesized large‐area diamond and electrical properties are investigated. Photoluminescence analysis is first carried out to clarify the optical properties of the heteroepitaxial diamond substrate. As a result, defect complexes of nitrogen‐vacancy and silicon‐vacancy are hardly detected in this substrate, suggesting that optically high‐purity diamond can be accomplished by heteroepitaxial growth. Then, the electrical properties of resistivity, mobility, carrier concentration, and conductive type by Hall effect measurements are investigated. For the samples with doping concentrations higher than 1016 cm−3, the electrical activation of implanted B acting as acceptors is confirmed. The compensation ratio for the sample with 3.5 × 1017 cm−3 concentration reaches 76%, indicating the presence of compensating donor‐like centers. With increasing the doping concentration to 3.5 × 1018 cm−3, the compensation ratio is significantly reduced to 35%. The observed mobility of the higher doped sample takes almost the ideal value observed for the sample doped by chemical vapor deposition process. It is suggested that the heteroepitaxial synthesis of large‐area and high‐purity substrates should contribute to the further development of the application to electronic, optical, and sensing devices in the future.

The effect of thermoelectric augmentation dramatically increased the specific capacity for electrochemical energy storage

Conventional methods to enhance the performance of electrode materials include morphological modification and defect engineering, but the limited number of active sites for the electrode remains a huge obstacle to achieving high-performance supercapacitors. In this work, we proposed a strategy to improve the electrode performance under the condition of limited active sites through the thermoelectric effect, and designed thermoelectric electrodes of the p-type Fe0.3Co0.7Sb3 cathode and the n-type Cu0.3Ag1.7Se anode for supercapacitors, respectively. In particular, the charge carriers generated by the thermoelectric effect accelerate the electrochemical reaction process at the interface between the thermoelectric electrode and the electrolyte under the temperature difference (ΔT) condition, thus increasing the specific capacity of the electrode. The p-Type Fe0.3Co0.7Sb3 cathode and the n-Type Cu0.3Ag1.7Se anode exhibit a 150% and 208% increase in the specific capacity, respectively. Furthermore, electrodes with different conduction types and various thermoelectric properties, such as n/p-type bismuth telluride and n/p-type half-Heusler thermoelectric materials are also studied, confirming the universality of the above phenomenon in thermoelectric electrodes. This work provides a universal route for the thermoelectric effect to promote the energy density of supercapacitors used in high temperature difference environments.

The impact of lithium concentration on the optical properties of colloidal ZnO nanocrystals

In this work, Li-doped ZnO nanocrystals (LZO) were synthesized via the sol–gel method. The concentration of zinc acetate has been set at 2 M in order to prepare the highly concentrated Li-doped ZnO sol. The generated LZO sol’s optical characteristics were assessed using UV–visible absorption and photoluminescence spectroscopy, while the ZnO nanopowders’ lithium doping process was assessed using XRD and Raman spectroscopy. The experimental findings indicate that the concentration of Li+ ions in the synthesized zinc oxide nanocrystals has reached the maximum solid solubility limit. The inclusion of Li+ ions results in a reduction in the size of ZnO nanocrystals, accompanied by a notable increase in violet-blue emission, distinguishing them from other materials reported in the literature. As can be found, Li+ ions cannot change the type of conductivity in thin ZnO films, and they have n-type conductivity.

Structure, bonding, and properties of RCr6Ge6 intermetallics (R[dbnd]Gd–Lu)

We report the discovery and characterization of three novel ternary compounds: TmCr6Ge6, YbCr6Ge6, and LuCr6Ge6, which complete the series of RCr6Ge6 intermetallics with kagome lattice. Energy dispersive X-ray analysis revealed the off-stoichiometric composition of RCr6Ge6 (RGd, Tb, Dy, Ho, Er, Tm, Yb, and Lu). The powder XRD analysis with subsequent Rietveld refinement showed that investigated compounds crystallize in the SmMn6Sn6 structure type (space group P6/mmm), a disordered variant of the MgFe6Ge6-type, with a small number of vacancies at the rare earth (1a) and germanium (2e) sites and two additional 1b and 2e sites partially occupied by additional rare earth and germanium atoms, respectively. A tendency to structure ordering is observed with decreasing rare earth ionic radii. Electrical resistivity measurements indicate a metallic conductivity type for all studied compounds. Magnetic characterization reveals paramagnetic behavior for TmCr6Ge6 and LuCr6Ge6, respectively, and suggests YbCr6Ge6 as a ferrimagnetic material. The DFT modeling of RCr6Ge6 shows a distinct high electron localization between Ge1 atoms, corresponding to strong covalent bonding. The calculated enthalpies of formation range from −18.56 kJ/mol for Gd to −19.60 for Tm compounds, while the distribution of the density of electronic states (DOS) confirms the metallic type of conductivity for all the series. The calculated elastic properties show brittle behavior and a high hardness level for the whole series. DFT modeling allowed us to reveal mechanisms of RCr6Ge6 formation and the origin of disorder in their crystal structure.

Preparation and oxidation characteristics of Si layers grown on 4H–SiC substrates

An experimental investigation into the deposition and oxidation of Si on 4H–SiC was conducted, leading to the successful synthesis and detailed characterization of a SiO2/P-type Si/N-type 4H–SiC triple-layer structure. Utilizing a common SiC vapor-phase epitaxy furnace, Si layers were grown on 4H–SiC substrates to investigate the effect of temperature. It was found that Si layers grown at 800 °C exhibited high material quality and an appropriate growth rate. Subsequently, they are oxidized at various temperatures, characterized to explore the quality of the oxide layers and tested to obtain critical information of the oxide layers and the conductivity type of the Si layers through Capacitance-Voltage (C–V) testing, identifying that oxidation at 1200 °C yielded the best oxide layers and interface quality.

Impact of post deposition treatment on optoelectrical and microstructural properties of tin sulfide thin film for photovoltaic applications

Tin sulfide (SnS) has attracted significant interest due to its advantageous optoelectrical characteristics and abundant presence in nature. Post-deposition treatments (PDTs) are frequently employed to enhance the crystallinity of chalcogenide-based solar cells. This study examined the influence of the post-deposition heat treatment procedure on thermally evaporated SnS thin film. The post-deposition annealing process, as determined by XRD and AFM studies, supplies the necessary thermal energy for re-crystallization, potentially resulting in a modification of crystallite dimensions. The occurrence of Sn-S polytypes was examined using Raman and XPS studies. Annealing causes changes in the optical properties, as observed through optical analysis, which can be attributed to the improvement in crystallinity. Subjecting the material to annealing at temperature of 300 °C greatly improves both mobility and conductivity, while also causing a change in conduction type. The observed variations in conduction type are attributed to the differing ratios between the amounts of Sn2+ and Sn4+. This strategy offers a novel route for the fabrication of thin-film photovoltaic cells by using a p-type buffer layer.