Increase In Compressive Strain Research Articles

Effects of Thickness and Anisotropic Strain on Polarization Switching Properties of Sub-10nm Epitaxial Hf0.5Zr0.5O2 Thin Films

Abstract Doped HfO2-based ferroelectric (FE) films are emerging as leading contenders for next-generation FE non-volatile memories due to their excellent compatibility with complementary metal oxide semiconductor processes and robust ferroelectricity at nanoscale dimensions. Despite the considerable attention paid to the FE properties of HfO2-based films in recent years, enhancing their polarization switching speed remains a critical research challenge. We demonstrate the strong ferroelectricity of sub-10 nm Hf0.5Zr0.5O2 (HZO) thin films and show that the polarization switching speed of these thin films can be significantly affected by HZO thickness and anisotropically strained La0.67Sr0.33MO3-buffered layer. Our observations indicate that the HZO thin film thickness and anisotropically strained La0.67Sr0.33MO3 layer influence the nucleation of reverse domains by altering the phase composition of the HZO thin film, thereby reducing the polarization switching time. Although the increase in HZO thickness and anisotropic compressive strain hinder the formation of the FE phase, they can enable faster switching. Our findings suggest that FE HZO ultrathin films with polar orthorhombic structures have broad application prospects in microelectronic devices. These insights into novel methods for increasing polarization switching speed are poised to advance the development of high-performance FE devices.

Achieving strength-ductility synergy of ODS-FeCrAl alloys via heterostructured strategy

Oxide dispersion strengthened (ODS)-FeCrAl alloys are candidate structural materials for advanced nuclear reactor applications, which have excellent strength and radiation tolerance but low ductility. In this study, a novel ODS-FeCrAl heterostructured composite, reinforced with FCC-structured ODS-CoCrFeNiMn high-entropy particles, was prepared by using mechanical alloying and spark plasma sintering to achieve the strength-ductility synergy. The effect of different reinforcement contents (0, 10, 15 and 20 wt.%, designated as RC-0, RC-10, RC-15, and RC-20, respectively) on the microstructure and mechanical properties of the composites was investigated. The results showed that the unreinforced reference alloy, RC-0, consists of BCC-structured ODS-FeCrAl matrix and high-density oxides. In the RC-10, RC-15, and RC-20 composites, in addition to the ODS-FeCrAl matrix and nanoscale oxides, FCC-structured ODS-CoCrFeNiMn high-entropy reinforcement with ultrafine grain size and FCC transition layer with gradient grain size are observed. As the reinforcement content increases, the thickness of transition region increases. The composites show an increase in ultimate compressive strength and compressive strain with increasing reinforcement content in the following order: 2951 MPa/33.6%, 3169 MPa/40.0%, 3290 MPa/43.2%, and 3489 MPa/48.8%. And the compressive yield strength exhibits an initial increase and subsequent decrease, i.e. 1523 MPa (RC-0), 1680 MPa (RC-10), 1635 MPa (RC-15), and 1355 MPa (RC-20), respectively. The increase in yield strength is mainly attributed to hetero-deformation induced (HDI) strengthening and reinforcement hardening. The improvement in ductility is mainly attributed to the HDI work hardening and the suppression of microcrack formation and propagation at prior powder boundaries.

Van der Waals ZnO/HfSn2N4 Heterojunction with Exceptional Photoresponse for Photodetectors.

Two-dimensional van der Waals heterojunctions represent a promising avenue for a spectrum of optoelectronic endeavors. Nonetheless, their deployment has been somewhat constrained by the suboptimal efficiency of the photocurrent generated. In this article, a ZnO/HfSn2N4 heterojunction is proposed to achieve high photoresponse efficiency. First-principles calculations are utilized to confirm that this heterojunction possesses thermal stability with a direct bandgap (1.36 eV). It exhibits a high light absorption coefficient and high carrier mobility (2.51 × 103 cm2 V-1 s-1), and biaxial strain has a significant effect on the modulation of the band structure. As the tensile strain increases, the bandgap changes nonlinearly, transitioning from a type-II to a type-I heterojunction. When compressive strain increases, the bandgap decreases. Quantum transport simulations are employed to calculate the density of states and transmission spectrum of the ZnO/HfSn2N4 model, verifying its excellent photoresponse (a photocurrent peak reaching 4.93 a02/photon and an extinction ratio peak of 75.1). It shows that the ZnO/HfSn2N4 heterojunction is a potentially efficient photodetector.

Electronic structures and optoelectronic properties of self-powered black phosphorus/InSe heterojunction: A time-domain ab initio perspective

The design and research of multifunctional, high-performance optoelectronic devices are greatly facilitated by the vdW heterojunctions of 2D materials. This study thoroughly investigates the electronic structures and optoelectronic properties of a BP/InSe heterojunction using first-principles and molecular dynamics methods. The van der Waals (vdW) heterojunction exhibits a built-in electric field and demonstrates strong self-powered capabilities. The NAMD analysis shows that the BP/InSe heterojunction effectively suppresses the recombination of electron-hole pairs, and has a fast photoresponse at zero bias voltage. In addition, the application of biaxial strain effectively adjusts the electronic properties of BP/InSe heterojunction. With the increase of compressive strain, the self-powered capability and NIR light capture of BP/InSe heterojunction are obviously enhanced. This study offers valuable insights and effective strategies for advancing high-performance, self-powered optoelectronic devices using two-dimensional van der Waals (vdW) heterojunctions.

Strains in sprayed concrete tunnel linings at Heathrow Terminal 4 and back-calculation of stress

This paper describes the installation and interpretation of strain gauges embedded in the sprayed concrete lining of the concourse tunnel at Heathrow Terminal 4 station, with readings taken over nearly 20 years. The rate of flow method was used to back-calculate stresses from the measured strains, which were then compared to stresses obtained from pressure cells at the same locations. The interpretation of the pressure cell data is described in Jones & Clayton (2021) and the pressure cell results were presented in Jones et al. (2023). The resulting 20-year history of stress and strain gives precious insights into the short- and long-term behaviour of a sprayed concrete lining. An increase of compressive strain up to 3 years followed by a slight decrease over the subsequent 15-16 years has been revealed. It is hypothesised that this is due to radial groundwater flow through the primary lining followed by the gradual application of hydrostatic water pressure to the waterproof membrane and secondary lining. The sprayed concrete primary lining was not designed for permanent loads but nevertheless appears to be supporting all of the effective stress, whereas the secondary lining is not supporting any ground loads but may be loaded by groundwater pressure.

First-principles study on the electronic structure, magnetic and optical properties of strain regulated (V, Mn) co-doped HfS2 monolayer

The impact of biaxial strain on the electronic structure, magnetic and optical properties of double impurity co-doped HfS2 monolayers was investigated using first principles methods. The findings indicate that (V, Mn) co-doped HfS2 monolayer behaves as a dilute magnetic semiconductor both before and after the application of strain, with its magnetism attributed to the hybridization of V:3d, Mn:3d, and S:3p orbitals. In the biaxial strain range of −5% to 5%, the ferromagnetism remains unchanged, the band gap decreases with the increase of compressive strain. In contrast, tensile strain leads to an increase in both the band gap. Finally, our analysis of optical properties reveals that (V, Mn) co-doped HfS2 monolayer enhances infrared light absorption coefficient, compressive strains further enhance this absorption coefficient. These results indicate that (V, Mn) co-doped HfS2 monolayer by strain regulation is an effective strategy for designing dilute magnetic semiconductors and optoelectronic devices.

Electrostatic energy-driven contact electrification mechanism from the ReaxFF molecular dynamics perspective.

Understanding the underlying principles of contact electrification is critical for more efficient triboelectric nanogenerator (TENG) development. Herein, we use ReaxFF molecular dynamics simulations in conjunction with a charge equilibration method to investigate the contact electrification mechanism in polyisoprene (PI), a natural rubber polymer, when it comes into contact with copper (Cu) and polytetrafluoroethylene (PTFE). The simulations reveal that the charge transfer directions in the PI/Cu and PI/PTFE contact models are opposite, and the amount of charge transfer in the former is substantially less than that in the latter, which are consistent with our TENG measurements. Contact electrification is revealed to be a spontaneous process that occurs to lower electrostatic energy, and the electrostatic energy released during contact electrification of PI/PTFE is greater than that of PI/Cu, which can be correlated with the relative strength of triboelectric charging observed for the two systems. A compression simulation of the PI/Cu contact model reveals that the quantity of charge transfer grows exponentially as compressive strain increases. Despite increasing the total energy of the system due to densification and distortion of the polymer structure, the applied deformation results in an energetically more stable electrostatic arrangement. We also find that the incorporation of a carbonaceous material into a polyisoprene matrix causes a faster increase in the amount of charge transfer with compressive strain, which is governed by a steeper electrostatic energy profile. This study provides an alternative perspective on the contact electrification mechanism, which could be beneficial for the development of energy harvesting devices.

Strain-tunable electronic and optical absorption in the MXenes nanolayers: A DFT approach

Computational simulations using density functional theory (DFT) were performed to show that biaxial strain engineering within the range of −8% to +8% is an effective method for modifying the fundamental properties of two-dimensional (2D) transition metal carbides (MXenes). In this work, we computationally explored the effect of both compressive (0 to −8%) and tensile (0 to +8%) strain on the structural, electronic, and optical properties of M2CO2 MXenes (M = Ti, Zr, Sc and Hf) nanolayers. When compressive strains are applied, the charge transfer between layers increases because of decreased interlayer coupling. Conversely, tensile strains result in the opposite behavior. The strain-tunable band gap effect in Mo2CO2 nanolayers is revealed by investigating the valence band maximum (VBM) and conduction band minimum (CBM) in the band structure under biaxial strain. It is observed that the indirect-to-direct band gap transition occurs when the tensile strain is applied to Sc2CO2 and Ti2CO2 nanolayers. In most samples, the energy gap increases with an increase in tensile strain and decreases with an increase in compressive strain. The optical absorption coefficient indicates considerable absorption in the visible to ultraviolet (UV) region. Additionally, the absorption can be influenced by biaxial strains. In particular, under compressive strains (−8%) and Z-polarized light, the UV absorption peak in Hf2CO2, Ti2CO2, and Zr2CO2 reaches 68 %, 78 %, and 113 % respectively. The results indicate that these M2CO2 MXenes nanolayers will have significant potential for applications in tunable optoelectronic devices.

Mesoscopic Numerical Simulation of Freeze–Thaw Damage in Hydraulic Concrete

To investigate the impact of freeze–thaw damage on the mechanical properties of concrete, this study utilized Python in combination with ABAQUS 2016 to generate a two-dimensional meso-scale model of concrete. Uniaxial compression tests were conducted on the concrete after freeze–thaw cycles to study the evolution of its mechanical properties. Using “relative compressive strength” as a variable, the relationships between this variable and the parameters of the freeze–thaw damage model were determined, leading to the establishment of the freeze–thaw damage model and the simulation of compressive tests on concrete after freeze–thaw cycles. This study also explored the changes in the mechanical properties of concrete with variations in ITZ parameters and coarse aggregate content. The conclusions drawn are as follows: A comparison with experimental data showed that the model ensures that the relative error of each mechanical property parameter does not exceed 7%, verifying the model’s rationality. Increasing the ratio of ITZ parameters improved the mechanical properties of the ITZ, enhancing the overall mechanical performance, but had almost no effect on the elastic modulus. Compared to ratios of 0.7 and 0.8, concrete with a ratio of 0.9 showed slower rates of decrease in compressive strength and elastic modulus and slower rates of increase in peak compressive strain after freeze–thaw cycles. The increase in coarse aggregate content had a similar effect on the strength and freeze–thaw resistance of concrete as the ratio of ITZ parameters. Concrete with a coarse aggregate content of 60% exhibited slower rates of change in mechanical properties after freeze–thaw cycles.

First-principles study on the electronic structure and photocatalytic properties of novel two-dimensional Janus CrXCN4 (X = Si, Ge)

Abundant studies demonstrate the significant role of Janus-structured two dimensional semiconductors as photocatalytic materials, highlighting their substantial advantages and importance in photocatalysis. In this work, CrXCN4 (X = Si, Ge) Janus monolayers were constructed based on CrC2N4, and the thermal stability, thermodynamic stability, mechanical stability, electronic properties, and optical properties of the monolayers were systematically investigated. Furthermore, an investigation was conducted to examine the impact of biaxial strain on their electronic and light absorption properties. The findings reveal that both monolayers exhibit direct band gap characteristics, with high absorption coefficients for visible light owing to their appropriate band gaps (1.44 eV for CrSiCN4 and 1.15 eV for CrGeCN4, respectively). At compressive strains exceeding 3%, the CrSiCN4 monolayer demonstrates an optimal band edge position, suggesting its potential as a photocatalyst for overall water splitting. Furthermore, as the compressive strain increases, the absorption spectra have blue-shifted and the absorption coefficient becomes higher, exceeding 2 × 105 cm−1 under a −3% compressive strain. Our study highlights the potential applications of CrXCN4 monolayers in the field of optoelectronic device, particularly emphasizing the promising candidacy of CrSiCN4 as an efficient photocatalyst.

Effect of biaxial strain on the electronic structure and optical properties of two-dimensional Bi2Te2S

In this work, the effects of biaxial strain on the electronic structure and optical properties of monolayer Bi2Te2S are studied by the first-principles methods. The calculated results show that the monolayer Bi2Te2S is an indirect band gap semiconductor with a band gap of 1.0 eV. The absence of imaginary frequency in the phonon spectrum indicates that the structure can exist stably. With the increase of tensile strain, the band gap value decreases approximately quasi-linearly. When 10 % tensile strain is applied, the band gap value is reduced to 0 eV, achieving the transition from an indirect bandgap semiconductor to a direct bandgap semiconductor. With the increase of compressive strain, the band gap value increases first and then decreases, and the band gap value reaches a maximum of 1.28 eV at −4 % strain. Combined with the density of states analysis, the reason for this change in the band structure is that the contribution of Bi 6p, Te 5p and S 3p state electrons to the conduction band and valence band changes under different strains. The effect of strain on the optical properties shows that when different strains are applied, the monolayer Bi2Te2S has a high absorption coefficient in the entire visible region. The single-layer Bi2Te2S material has a smaller refractive index under tensile strain. The static dielectric function value increases with the increase of tensile strain, and the peak value of the dielectric function decreases and moves to the low energy direction. This indicates that the tensile strain will enhance the migration of photogenerated electron-hole pairs, which is beneficial to improving the utilization of light. This work will provide a theoretical reference for the subsequent study of the electronic and optical properties of monolayer Bi2Te2S.

Absorption frequency band switchable intelligent electromagnetic wave absorbing carbon composite by cobalt confined catalysis

The dielectric loss of carbon materials is closely related to the microstructure and the degree of crystallization, and the microstructure modulation of electromagnetic wave absorbing carbon materials is the key to enhancing absorption properties. In this work, a porous elastic Co@CNF-PDMS composite was prepared by freeze-drying and confined catalysis. The graphitization degree and conductivity loss of carbon nanofibers (CNFs) were regulated by heat treatment temperature and Co catalyst content. The construction of a heterointerface between Co and C enhances the interfacial polarization loss. The Co@CNF-PDMS composite with 4.5 mm achieves the minimum reflection loss (RLmin) of –81.0 dB at 9.9 GHz and RL no higher than –12.1 dB in the whole of the X-band. After applying a load of up to 40 % strain and 100 cycles to Co@CNF-PDMS, the dielectric properties of the composite remain stable. With the increase of compression strain, the distribution density of the absorbent increases, and the CNF sheet layer extrusion contact forms a conductive path, which leads to the conductive loss increase, finally, the absorption band moves to a high frequency. The absorption band can be bi-directionally regulated by loading and strain with good stability, which provides a new strategy for the development of intelligent electromagnetic wave absorbing materials.

A holistic approach of strain-induced and spin-orbit coupling governed structural, optical, electrical and phonon properties of Janus MoSSe heterostructure via DFT theory

Spintronics and optoelectronic equipment benefit from efficient modification of electrical and optical characteristics for Van der Waals heterostructures. Janus MoSSe, in two dimensions, has superior electronic, optical, and phonon properties. Based on these characteristics, we evaluate the effects of biaxial compressive and tensile strain ranges of −6% to +6% on the structural, optical, spin–orbit coupling, and phonon properties of two-dimensional MoSSe employing first-principles-based density functional theory calculations. At K-point, MoSSe possesses a direct band gap of 1.665 eV, making it a semiconductor. Yet, applying tensile strain, we can observe that the bandgap of MoSSe has declined. On the other hand, the bandgap of MoSSe rises due to the compressive strain. From the phonon properties, it is clear that the stability of the monolayer MoSSe is observed in the case of tensile strain. With the increase of compressive strain, it loses its stability. With a photon energy of 2.5 eV, MoSSe exhibits three times greater optical absorption than other photon energy levels. In comparison to two monolayers (MoS2, MoSe2), the MoSSe heterostructure shows an elevated optical absorption coefficient in the visible light band, according to our calculations of its dielectric constant and optical absorptionThe MoSSe dielectric constant’s peaks shift to the stronger photon energy as compressive strain is increased; in contrast, if tensile strain is added, the highest points shift to the less powerful photon energy. This suggests that the spin–orbit coupling (SOC) in MoSSe heterostructures can be enhanced under strain, which has implications for spintronics. The effect of strain can be used to tailor the phonon behaviors of MoSSe, which can be useful for controlling the material’s mechanical and thermal characteristics. The versatility of the electronic and optical properties of the material under strain can be harnessed to design novel devices such as strain sensors, optoelectronic modulators, and detectors.

Strain tuning on Van der Waals negative capacitance transistors

Negative differential capacitance induced by the energy barrier formed by the nonlinear ferroelectric insulating layer during the phase transition in negative capacitance field effect transistors (NCFETs) can break through the fundamental thermionic limit of the metal-oxide-semiconductor field effect transistors (MOSFETs), which is set at a subthreshold swing (SS) of 60 mV/dec at room temperature for low-power switching. Strain engineering has been shown effective for modulating both intrinsic and coupled properties of ferroelectric materials. However, while the modulation of negative capacitance (NC) by strain primarily remains within theoretical predictions, there is a lack of experimental studies to explore its effect on NCFETs. This study introduces strain to NCFETs by utilizing the magnetostriction of Terfenol-D upon the applied magnetic field. Results reveal a decrease in SSmin from 43.5 mV/dec to 15.2 mV/dec with a compressive strain increase from 0 to −0.005%. Additionally, theoretical results by using time-evolving Ginzburg-Landau equations and Kirchhoff's laws demonstrate that compressive strain enhances both the amplitude and duration of transient NC in CuInP2S6, while vice versa under tensile strain. This work offers valuable insights for the design of NCFET devices.

Development of low carbon concrete and prospective of geopolymer concrete using lightweight coarse aggregate and cement replacement materials

The use of Ground Granulated Blast-furnace Slag (GGBS) as an alternative cement replacement material in combination with conventional coarse aggregate have been successful in the production of near green concrete. Undoubtedly, GGBS has exhibited good cementitious attributes, however, there are concerns with slow strength development and workability owing to its non-pozzolanic activities as well as some degree of porosity notwithstanding the sustainability potential. Therefore, this study presents a lytag based geopolymer lightweight concrete with high strength development, improved mechanical properties and reduced embodied carbon. To further improve and enhance the potential production of green concrete, complete replacement of conventional coarse aggregate with a recycled lightweight aggregate from industrial waste was carried out. The geopolymer precursors consisted of sodium hydroxide, sodium silicate, GGBS and silica fume to optimize the performance of the concrete at 60–80% cement replacement for a target design mix of 20, 30, 40, and 50 MPa. The performance of lytag based geopolymer concrete was compared with that of non-geopolymer lytag based concrete (control samples). The results show a 42% increase in compressive strength for the geopolymer lightweight concrete and a 22% increase in ultimate compressive strain which is an indication of improved moment of resistance in structural design. The results also show a 46–61% reduction in embodied carbon for the use of non-geopolymer lytag based concrete and 69–77% reduction for lytag based geopolymer concrete. The geopolymer concrete between 7 and 63 days of loading increases by 0.55% in creep strain compared with increases of 2.81% for non-geopolymer lytag based concrete and reduction to 27.96% for the normal weight concrete. Modulus of Elasticity reduces with age of loading for the geopolymer concrete during creep at 0.39% compared to reduction of 1.93% for non-geopolymer lytag based concrete and increase of 12% for the normal weight concrete.

Tuning the physical properties of inorganic novel perovskite materials Ca3PX3 (X=I, Br and Cl): Density function theory

In photovoltaic technology, inorganic perovskite solar cells formed from halide have developed into a noteworthy prospect, primarily attributable to their exceptional efficiency, cost-effectiveness, and straightforward manufacturing techniques. Lead-free A3BX3 inorganic perovskites have generated significant attention within the environmentally friendly solar industry thanks to their extraordinary characteristics encompassing thermoelectricity, optoelectronics, and elasticity. This research focuses on the attributes of the structural, electrical, and optical inorganic halide perovskites Ca3PX3 (X = I, Br, and Cl) using the first-principles density-functional theory (FP-DFT). According to the electronic band structures, Ca3PI3, Ca3PBr3, and Ca3PCl3 show semiconductor characteristics with a straight bandgap of 1.4909 eV, 1.9502 eV, and 2.2058 eV, respectively, at the Γ(gamma)-point. Whenever one takes consideration into account the spin-orbital coupling (SOC) effect, the bandgap of the Ca3PI3, Ca3PBr3, and Ca3PCl3 perovskites is minimized to 1.2382 eV, 1.6456 eV, and 1.9056 eV. All these structures' bandgaps are compressed under compressive strain while they expand with tensile strain. The optical properties indicate that these materials have outstanding visible light consumption capabilities due to their distinct band features, comprising functions of dielectric, consumption coefficient, and function of electron collapse. Observations indicate that the dielectric constant peaks of Ca3PX3 (where X represents I, Br, or Cl) exhibit a redshift, moving towards lower photon energy levels as compressive strain increases. Conversely, they show a blueshift behavior, shifting to a greater amount of photon energy levels by applying tensile strain. Therefore, these characteristics render Ca3PX3 perovskites highly suitable for optimizing light guidance for solar power and energy retention tools.

First-principles calculations to investigate effect of strain on magnetic and optical properties of Mn-adsorbed SnSe2 monolayer

Nowadays, two-dimensional materials are ideal for fabricating optoelectronic and spintronic devices. We have investigated the optical and magnetic properties of −6 % to 6 % strain on Mn-adsorbed monolayer SnSe2 films using a first-principles approach. The Mn-adsorbed monolayer SnSe2 is a magnetic semiconductor in the absence of strain effects. As the tensile strain increases, the band gap of the Mn-adsorbed monolayer SnSe2 decreases and the structure becomes unstable, and Mn adsorption changes to exothermic adsorption at −6 % strain. The magnetic moment of the system increases slightly with increasing tensile strain and decreases rapidly when the strain reaches 4%. As the compressive strain increases, the magnetic moment first decreases slightly and then decreases rapidly when the strain reaches −4 %. Calculations of the optical properties show that the static dielectric constants at −6 %, −4 %, −2 %, 0 %, 2 %, 4 % and 6 % strains are 15.23, 10.19, 8.67, 7.78, 6.38, 5.99 and 5.92, respectively, which increase with increasing compressive strain. It decreases with increase in tensile strain. The static dielectric function increases as the compressive strain increases and decreases as the tensile strain increases. In the visible light region, the reflectivity, refractive index, extinction coefficient and photoconductivity in the XX and ZZ directions increase with increasing tensile strain. Our study shows that the optoelectronic and magnetic properties of the SnSe2 adsorbed Mn system can be improved to some extent by applying strain, and this study is expected to provide theoretical guidance for the fabrication of SnSe2-based magnetic optoelectronic devices.

Effect of tensile and compressive strains on the electronic structure of O-atom-doped monolayer MoS2

We investigate the effects of biaxial tensile and compressive strains on the electronic structure of O-doped monolayer MoS2 by density functional theory (DFT) in this paper. O-doped monolayer MoS2 is an exothermic reaction. The doping of O leads to the transformation of the system from direct bandgap to indirect, and the bonding of Mo and O causes a large amount of charge transfer. The application of tensile strain leads to a decrease in the stability of the doped system, and the system always maintains the nature of indirect bandgap. The degree of interatomic charge transfer and bandgap value gradually decrease with the increase of tensile strain. The application of compression strain improves the stability of the doped system, and as the compressive strain increases, the bandgap of the doped system completes the indirect–direct–indirect transformation. The bandgap value shows a trend of increasing and then decreasing. Additionally, the degree of charge transfer between atoms is strengthened.

Effect of uniaxial strain on the electronic and magnetic properties of N2SrRb: a DFT study

ABSTRACT Using the first-principles density functional theory calculations, we examined the effect of uniaxial strain on the electronic and magnetic properties of full-Heusler alloy N2SrRb. Our results show that N2SrRb is a ferromagnetic full-Heusler alloy, and it exhibits half metallic properties with 100% spin polarisation when no strain is applied. The half-metallic and magnetic properties of N2SrRb were retained under the ranges of tensile and compressive strain applied. The spin flip gap was found to increase as the tensile strain increases, while it decreases as the compressive strain increases. The mechanical properties show that the full-Heusler alloy is mechanically stable and having a ductile characteristics

Rapid and automatic phenotyping of cells through their annexin-mediated enforced blebbing response

Cellular blebbing has been widely recognized as a hallmark of processes such as apoptosis and cell migration. Here, we developed a novel double-layer compression microfluidic device to trigger the enforced blebbing of cells in a programmable manner. It was found that the critical compression for inducing membrane bleb in highly invasive or drug-resistant breast and lung cancer cell lines could be several times higher than that of their non-invasive or drug-sensitive counterparts. Furthermore, we showed that knockdown of annexin-6, a protein known to be heavily involved in membrane and calcium dynamics in cells, led to a significantly reduced cellular volume, reflecting a lowered intracellular pressure, and an ∼twofold increase in the critical compressive strain for triggering blebbing. The fact that hundreds of cells can be tested and automatically analyzed in our device at the same time highlights the potential of this simple and label-free method in applications such as cell sorting and disease detection.