Complementary Transistor Circuits Research Articles

Physical Fault Tolerance of Nanoelectronics

The error rate in complementary transistor circuits is suppressed exponentially in electron number, arising from an intrinsic physical implementation of fault-tolerant error correction. Contrariwise, explicit assembly of gates into the most efficient known fault-tolerant architecture is characterized by a subexponential suppression of error rate with electron number, and incurs significant overhead in wiring and complexity. We conclude that it is more efficient to prevent logical errors with physical fault tolerance than to correct logical errors with fault-tolerant architecture.

Naphthalene and perylene diimides for organic transistors

The development of ambient stable organic n-channel semiconductor molecules for thin-film transistors has experienced a tremendous impetus in the last decade to close the gap in performance in comparison to that of their p-channel counterparts. Especially naphthalene and perylene tetracarboxylic diimides (NDI and PDI) have shown to be the most valuable building blocks to achieve this challenging goal and to gain insight into the molecular structure-transistor performance relationship. Remaining challenges and new emerging research fields for these n-type semiconductors are the optimization of their deposition on flexible substrates, the control of their long term ambient stability and their implementation in complementary transistor circuits, display and sensor devices.