Compatible Process Research Articles

From synthetic vesicles to living cells: Anchoring conducting polymers to cell membrane.

Coupling biology with electronics is emerging as a transformative approach in developing advanced medical treatments, with examples ranging from implants for treating neurological disorders to biosensors for real-time monitoring of physiological parameters. The electrodes used for these purposes often face challenges such as signal degradation due to biofouling and limited biocompatibility, which can lead to inaccurate readings and tissue damage over time. Conducting organic polymers are a promising alternative because of their mechanical, chemical, and physical properties, which better match the ones of biological systems. They also can be synthesized in vivo to form bio-templated structures through biologically compatible manufacturing processes. Here, we report a method to achieve conductive polymer structures anchored to cell membranes, creating an intimate interface between the polymer electrode and single cells. We show that the polymer is nontoxic to cells and does not interfere with its activation, thereby making this process an interesting alternative to existing materials and electrode techniques.

Janus Electronic Devices with Ultrathin High-κ Gate Dielectric Directly Integrated on 1T'-MoTe2.

Integrating high-quality dielectrics with two-dimensional (2D) transition metal chalcogenides (TMDCs) is crucial for high-performance electronics. However, the lack of dangling bonds on 2D material surfaces complicates direct dielectric deposition. We propose using atomic layer deposition (ALD) to integrate ultrathin high-κ dielectric directly on 1T'-MoTe2 surfaces, facilitating the creation of high-performance back-gated field-effect transistors (FETs). Exploiting 1T'-MoTe2's natural oxidation in ambient conditions, we directly deposit dense and uniform HfO2 dielectric films below 5 nm, achieving an equivalent oxide thickness (EOT) of 0.97 nm. The resulting back-gate transistors, with a monolayer MoSSe on HfO2/1T'-MoTe2, show a current on/off ratio over 105 and operate at low voltages (<1 V), indicating high gating efficiency and a charge carrier mobility of 2.93 cm2V-1s-1. Additionally, we demonstrate a 6 × 5 bottom-gated array of MoSSe transistors using all-1T'-MoTe2 electrodes, achieving an 86.7% sample yield. Our approach also enables the creation of various integrated logic circuits such as inverters, NAND, and NOR gates. This research offers a feasible method for integrating high-κ dielectric films using industrially compatible ALD processes, providing excellent thickness control, uniformity, and scalability for 2D electronic devices.

Exploring Sb2S3 as a hole transport layer for GeSe based solar cell: a numerical simulation

Abstract Germanium selenide (GeSe) and antimony sulfide (Sb2S3) both are technological intriguing semiconductor material for green and economical photovoltaic devices. In this study, GeSe and Sb2S3 have been utilized as the absorber layer and hole transport layer, respectively, to constructed a heterojunction thin film solar cell consisting of FTO/TiO2/GeSe/Sb2S3/Metal. The GeSe and Sb2S3 are binary compounds and can adopt the same film deposition method, for instance, thermal evaporation, which is expected to improve process compatibility and to reduce production costs. The TiO2 (electron transport layer) and Sb2S3 can form small spike-like conduction band offset and valence band offset with the GeSe, respectively, which possesses potential to suppress carrier recombination at the heterointerfaces. Subsequently, the effects of main functional layer material parameters, heterointerface characteristics and back contact metal work function on the performance parameters of the proposed solar cell were simulated and analyzed using wxAMPS software. After numerical simulation and optimization, the proposed solar cell can reach an open circuit voltage of 0.872 V, a short circuit current of 40.72 mA·cm−2, a filling factor of 84.16%, and a conversion efficiency of 28.35%. According to the simulation results, it is anticipated that the Sb2S3 can serve as a hole transport layer for GeSe based solar cell and enable device to achieve high efficiency. Simulation analysis also provides some meaningful references for the design and preparation of heterojunction thin film solar cells.

Development and Evaluation of an ESP32-based Temperature and Humidity Control Unit for Textile Storage

Monitoring temperature and humidity in textile storage warehouses is vital for maintaining product quality and ensuring optimal conditions. This study focuses on developing a temperature and humidity control unit using an ESP32 microcontroller, evaluating its performance through black-box testing. The ESP32-based system offers a scalable and energy-efficient solution for climate control, delivering precise environmental monitoring through integrated Wi-Fi and Bluetooth for affordable connectivity. Its advanced real-time data processing capabilities and compatibility with multiple sensors make it highly suitable for cost-effective, large-scale implementations in textile storage environments. The experimental approach involves controlling temperature and humidity as independent variables, while ensuring optimal storage as the dependent variable. The DHT21 sensor, ESP32 microcontroller, and relay are used as control variables. Software was developed in the Arduino IDE to manage temperature and humidity, and after validation, the program was uploaded to the ESP32 for black box testing. Results confirmed that the system effectively regulates these conditions, crucial for preserving textiles. The ESP32 efficiently serves as the control unit, and testing validated its ability to maintain desired limits. Future improvements could include wireless access for remote monitoring, enhancing flexibility and operational efficiency in environmental control for textile storage.

Molecular Control Based on Electrostatically Driven Modification for Solid-State Lithium Metal Batteries.

With the rapid development of energy vehicles, the demand for high-safety and high-energy-density battery systems, such as solid-state lithium metal batteries, is becoming increasingly urgent. Polyethylene oxide (PEO), as a commonly used electrolyte in solid-state batteries, has the advantages of easy processing and good interface compatibility but also faces the issue of poor ionic conductivity. In this study, we have enhanced the mechanical properties and ion conductivity of PEO electrolytes significantly, stabilizing electrochemical cycling, utilizing positively charged MXene as a modifying material for PEO solid electrolytes and leveraging stronger electrostatic forces. With these enhanced properties, the modified solid electrolyte in Li/Li cells demonstrates excellent cycling stability of over 430 h at 0.1 mA cm-2. Furthermore, the Li/LiFePO4 cells show excellent cycling performance, and the capacity retention rate is 92.1%.

A 2DEG‐Based GaN‐on‐Si Terahertz Modulator with Multi‐Mode Switchable Control

AbstractAs terahertz (THz) technology has been widely considered as a key candidate for future sixth‐generation wireless communication networks, THz modulators show profound significance in wireless communication, data storage, and imaging. In special, dynamic tuning of THz waves through 2D electron gas (2DEG) incorporated with a hybrid design of metasurface has attracted keen interest due to the combined merits of deliberate structural design, rapid switching speed and the process compatibility. Current meta‐modulator enables very high modulation depth but encounter limited bandwidth. In this paper, by taking into account the co‐functional effects of temperature and voltage‐dependent dynamic control on transmission amplitude, a 2DEG‐based GaN‐on‐Si modulator with two switchable operational states (or four modes) of active wave control is proposed. Under cryogenic temperature conditions, the proposed device exhibits prominent 2D plasmons characteristics with switchable transitions between the gated mode and ungated mode for active control. Under room temperature conditions, the proposed device exhibits non‐resonance broadband spectra characteristics with tunable transitions between the linearity mode and depletion mode for transmission control. The scheme provides an option for the development of the actively tunable THz meta‐modulator and paves a way for the robust multifunctionality of electrically controllable THz switching, and biosensors.

Hypoeutectic Liquid Metal Printing of 2D Indium Gallium Oxide Transistors.

2D native surface oxides formed on low melting temperature metals such as indium and gallium offer unique opportunities for fabricating high-performance flexible electronics and optoelectronics based on a new class of liquid metal printing (LMP). An inherent property of these Cabrera-Mott 2D oxides is their suboxide nature (e.g., In2O3-x), which leads high mobility LMP semiconductors to exhibit high electron concentrations (ne >1019cm-3) limiting electrostatic control. Binary alloying of the molten precursor can produce doped, ternary metal oxides such as In-X-O with enhanced electronic performance and greater bias-stress stability, though this approach demands a deeper understanding of the native oxides of alloys. This work presents an approach for hypoeutectic rapid LMP of crystalline InGaOx (IGO) at ultralow process temperatures (180°C) beyond the state of the art to fabricate transistors with 10X steeper subthreshold slope and high mobility (≈18cm2Vs-1). Detailed characterization of IGO crystallinity, composition, and morphology, as well as measurements of its electronic density of states (DOS), show the impact of Ga-doping and reveal the limits of doping induced amorphization from hypoeutectic precursors. The ultralow process temperatures and compatibility with high-k Al2O3 dielectrics shown here indicate potential for 2D IGO to drive low-power flexible transparent electronics.

Silicon rich nitride: a platform for controllable structural colors

Abstract High refractive index dielectric materials like silicon rich nitride (SRN) are critical for constructing advanced dielectric metasurfaces but are limited by transparency and complementary metal oxide semiconductor (CMOS) process compatibility. SRN’s refractive index can be adjusted by varying the silicon to nitride ratio, although this increases absorption, particularly in the blue spectrum. Dielectric metasurfaces, which utilize the material’s high dielectric constant and nano-resonator geometry, experience loss amplification due to resonance, affecting light reflection, light transmission, and quality factor. This study explores the impact of varying the silicon ratio on structural color applications in metasurfaces, using metrics such as gamut coverage, saturation, and reflection amplitude. We found that a higher SRN ratio enhances these metrics, making it ideal for producing vivid structural colors. Our results show that SRN can produce a color spectrum covering up to 166 % of the sRGB space and a resolution of 38,000 dots per inch. Fabricated samples vividly displayed a parrot, a flower, and a rainbow, illustrating SRN’s potential for high-resolution applications. We also show that SRN can provide a better CIE diagram coverage than other popular metasurfaces materials. These findings highlight the advantages of SRN for photonic devices, suggesting pathways for further material and application development.

Laser-formed nanoporous graphite anodes for enhanced lithium-ion battery performance

Lithium-ion batteries are pivotal in modern energy storage, commonly utilizing graphite anodes for their high theoretical capacity and long cycle life. However, graphite anodes face inherent limitations, such as restricted lithium-ion storage capacity and slow diffusion rates. Enhancing the porosity of graphite and increasing d-spacing in expanded graphite anodes have been explored to improve lithium-ion diffusion and intercalation. Recent advancements suggest that nanoscale modifications, such as utilizing nano-graphite and graphene, can further enhance performance. Laser processing has emerged as a promising technique for synthesizing and modifying graphite and graphene-related materials, offering control over surface defects and microstructure. Here, we demonstrate an industrially compatible one-step laser processing method to transform a nano-graphite and graphene mixture into a nanoporous matrix, significantly improving lithium-ion battery performance. The laser-processed anodes demonstrated significantly enhanced specific capacities at all charge rates, with improved relative performance at higher charge rates. Additionally, long-term cycling at 1 C showed that laser-processed cells outperformed their non-processed counterparts, with specific capacities of 323 and 241 mAh/g, respectively.

Participation in Energy Transitions: A Comparison of Policy Styles

Stakeholder and public participation in policymaking for energy transitions is one of the most promising approaches to fulfilling the promises of a democratic sustainability transition. Over the years, many studies have been published about concepts, methodologies, and empirical results of participatory approaches and implementations. In this paper, we focus on the compatibility of participatory processes with different policy styles of democratic governance. We conducted a systematic literature search comparing different concepts of democratic governance and applying them to public participation, in particular that associated with energy transitions. Our main objective in this paper is to link the requirements for a sustainable energy transition to governance processes and structures; we further aim to delineate suitable formats for stakeholder and public participation. Our analysis provides a basis for a wide-ranging and multi-perspective research agenda that promises to provide a deeper understanding and explanation of complex governance arrangements for energy transitions. The five democratic policy styles that we selected for this review are: autocratic, adversarial, collaborative, reflexive, and inclusive governance. We conclude that none are adequate on their own, and so we put forth a novel hybrid we call the “mediative approach.” From this approach, we derive a new research framework for addressing the current challenges of democratic decision-making in energy transitions. Three pressing questions emerge, one relating to the interplay of top-down and bottom-up modes of governance; a second to the conditions for actor collaboration; and a third to the perception of democratic legitimacy by affected parties.

Molybdenum-Oxide-Modified PEDOT:PSS as Efficient Hole Transport Layer in Perovskite Solar Cells.

Over the last ten years, there has been a remarkable enhancement in the power conversion efficiency (PCE) of perovskite solar cells (PSCs), with poly (3,4-ethylenedioxythiohene):poly (styrenesulfonate) (PEDOT:PSS) emerging as a prevalent choice for the hole transport layer (HTL). Nevertheless, the evolution of the widely utilized PEDOT:PSS HTL has not kept pace with the swift advancements in PSC technology, attributed to its suboptimal electrical conductivity, acidic nature, and inadequate electron-blocking performance. This study presents a novel approach to enhance the HTL by introducing molybdenum oxide (MoO3) into the PEDOT:PSS, leveraging the conductivity and solution processing compatibility of MoO3. Two methods for MoO3 integration were explored: an ammonium molybdate tetrahydrate (AMT) precursor and the direct addition of MoO3 nanoparticles. The carrier dynamics of PSCs modified by MoO3 are significantly optimized. Therefore, the PCE of the device modified by AMT and molybdenum oxide is increased to 18.23 and 19.64%, respectively, and the stability of the device is also improved. This study emphasizes the potential of MoO3 in contributing to the development of more efficient and stable PSCs.

Diastereoselective Homocoupling of Benzylic C(sp3)-H Bonds Enabled by Halogen Transfer.

A transition-metal- and harsh-oxidant-free strategy for diastereoselective homocoupling of benzylic α-boryl carbanions has been developed. Central to this methodology is the ability of the halogen transfer reagent to seamlessly integrate halogenation and substitution within a compatible process. Additionally, this methodology is also applicable to the homocoupling of diarylmethanes and alkylheteroarenes. Substrates bearing oxidatively sensitive functional groups were well-tolerated. Preliminary studies suggest that the hydrogen bond between two boryl groups contributes to the high diastereoselectivities.

Bias-controlled modulation for monolithic III-nitride optoelectronic integration.

III-nitride multi-quantum well (MQW) diodes can modulate the light emitted by another diode with the same MQW structure by varying the bias voltage owing to the spectral overlap between the electroluminescence spectrum and spectral responsivity curve of the MQW diodes. Here, we investigate bias-controlled modulation by monolithically integrating an optical transmitter, waveguide, electro-absorption modulator (EAM), and slot grating coupler on a silicon-based III-nitride platform using compatible fabrication processes. The modulated light is coupled into a fiber, which is direct to a photodiode for characterization. The bandwidths of forward-biased emission modulation and reverse-biased absorption modulation are of the same order of magnitude, with the latter exhibiting significant performance improvements. In addition, real-time video signal transmission was achieved using an EAM, which provides a meaningful reference for modulation applications of silicon-based GaN optoelectronic integrated systems.

Si-waveguide-based optical power monitoring of a 2 × 2 Mach-Zehnder interferometer based on a InGaAsP/Si hybrid MOS optical phase shifter.

Transparent in-line optical power monitoring in Si programmable photonic integrated circuits (PICs) is indispensable for calibrating integrated optical devices such as optical switches and resonators. A Si waveguide (WG) photodetector (PD) based on defect-mediated photodetection is a promising candidate for a transparent in-line optical power monitor, owing to its simplicity and ease of integration with a fully complementary metal-oxide-semiconductor (CMOS)-compatible process. Here, we propose a simple optical power monitoring scheme for a 2 × 2 Mach-Zehnder interferometer (MZI) optical switch based on InGaAsP/Si hybrid MOS optical phase shifters. In the proposed scheme, a low-doped p-type Si WG PD with a response time of microseconds is utilized as a transparent in-line optical power monitor, and the ground terminal of the MOS optical phase shifter is shared with that of the Si WG PD to enable the simple monitoring of the output optical power of the MZI. Based on this scheme, we experimentally demonstrate that the output optical power of a 2 × 2 MZI can be simply monitored by applying a bias voltage to the Si slabs formed at the output WGs of the MZI without excess optical insertion loss.

Improving long-term kidney allograft survival by rethinking HLA compatibility: from molecular matching to non-HLA genes.

Optimizing immunologic compatibility in organ transplantation extends beyond the conventional approach of Human Leukocyte Antigen (HLA) antigen matching, which exhibits significant limitations. A broader comprehension of the roles of classical and non-classical HLA genes in transplantation is imperative for enhancing long-term graft survival. High-resolution molecular HLA genotyping, despite its inherent challenges, has emerged as the cornerstone for precise patient-donor compatibility assessment. Leveraging understanding of eplet biology and indirect immune activation, eplet mismatch calculators and the PIRCHE-II algorithm surpass traditional methods in predicting allograft rejection. Understanding minor histocompatibility antigens may also present an opportunity to personalize the compatibility process. While the application of molecular matching in deceased donor organ allocation presents multiple technical, logistical, and conceptual barriers, rendering it premature for mainstream use, several other areas of donor-recipient matching and post-transplant management are ready to incorporate molecular matching. Provision of molecular mismatch scores to physicians during potential organ offer evaluations could potentially amplify long-term outcomes. The implementation of molecular matching in living organ donation and kidney paired exchange programs is similarly viable. This article will explore the current understanding of immunologic matching in transplantation and the potential applications of epitope and non-epitope molecular biology and genetics in clinical transplantation.

Microwave dielectric properties of LiM(PO3)3 (M = Mg2+, Zn2+) ceramics

Microwave dielectric ceramics with low dielectric permittivity εr combined with low ceramic sintering temperatures have raised considerable research interest recently due to their potential application in LTCC technology for 5G wireless communications. Here in this study, ceramic processing, crystal structure, and microwave dielectric properties of LiM(PO3)3 (M = Mg2+, Zn2+) ceramics were comprehensively investigated. Optimized LTCC compatible ceramic sintering processes were developed at 725 °C and 625 °C for 10 h, respectively, leading to high relative densities of 96.27 % and 94.09 %. Low microwave εr values of 5.74 and 6.30 and Q × f values of 16,660 GHz and 9629 GHz (at 14 GHz) were obtained, where such values were found to be affected by the grain microstructure. LiMg(PO3)3 exhibited a small τf of −11 ppm/°C, while LiZn(PO3)3 showed −58 ppm/°C. Complementary impedance spectroscopy measurements indicated modest Li+-ion conductivity with a higher value of 2.92·10−7 (Ωcm)−1 at 560 K (287 °C) in LiZn(PO3)3. Both ceramics were found to be dielectrically homogeneous without any perceptible contributions from the grain boundaries.

Nickel‐Manganese‐Based Layered Oxide for Sodium Ion Battery Cathode Materials

Sodium‐ion batteries (SIBs) have demonstrated significant potential as alternatives to conventional lithium‐ion batteries (LIBs) for modern grid and mobile energy storage applications, due to the abundant natural resources and low cost of sodium. Layered transition metal oxides (LTMOs) have attracted focused research attentions due to their high specific capacities, energy densities as well as the compatible preparation processes with those of LIBs cathode materials. Among these, Ni/Mn‐based LTMOs (NMLOs) are particularly noteworthy for their cost‐effectiveness and superior electrochemical performance, such as excellent capacity retention, voltage stability, high operating voltage and rate capability. In this review, we briefly introduce the synthesis methods of NMLOs, discuss the challenges, and summarize the solutions. The insights presented may contribute to the development of NMLOs based SIBs.

Buried interface modification of condensation reflux-processed SnO2 electron transport layers for CsPbBr3 perovskite solar cells

Low temperature solution-processed SnO2 is favorable for electron transport layer (ETL) of flexible perovskite solar cells (PSCs) owing to their process compatibility. Here, we propose a route of condensation reflux-processed SnO2 ETLs for PSCs using SnCl2 source. However, the low temperature SnCl2-derived SnO2 ETLs are inherently associated with a high defect state density as well as a large amount of H+ and Cl- residual on the surface, which will cause open-circuit voltage (VOC) loss of the devices. To tackle this issue, aqueous solutions of KOH, CsOH, and KCl have been employed to regulate the buried interfaces. The effects of different cations (K+ and Cs+) and anions (OH- and Cl-) on the photovoltaic performance of the devices have been comparatively explored. The buried interface with KOH modification showed the best effect, which not only improved the quality and light absorption of CsPbBr3 perovskite layer but also markedly reduced the defect state density at the interface. The optimal device with an architecture of FTO/SnO2/KOH/CsPbBr3/carbon exhibited a champion power conversion efficiency (PCE) of 7.80 %, VOC of 1.46 V, short-circuit current density (JSC) of 7.50 mA/cm2, and fill factor (FF) of 0.71, compared with the pristine counterpart with a PCE of 5.86 %, VOC of 1.40 V, JSC of 6.37 mA/cm2, and FF of 0.66, respectively. The strategy of low temperature-processed SnO2 ETLs by KOH interface modification may also provide an avenue for other-typed flexible PSCs manufacture.

Development of high on/off current ratio in p-type copper oxide thin-film transistors with a back-end-of-line compatible process

Development of high on/off current ratio in p-type copper oxide thin-film transistors with a back-end-of-line compatible process

Case Study: Compatibility Testing of Pre-Filled Syringe Stopper Technology with Vaporized Hydrogen Peroxide Terminal Sterilization Process.

STERIS and W.L. GORE collaborated on a case study testing the compatibility of a new prefilled syringe plunger design with VHP terminal sterilization. VHP chamber conditions require deep vacuum pulsing, which may represent challenges to prefilled syringe container integrity. The growing industry trend toward VHP sterilization is driven by the FDA search for alternative sterilization methods to EO and the recent publication of a VHP specific process standard. The purpose of the study is to test and report compatibility of the new 0.5 mL GORE IMPROJECT plunger, a silicone free syringe solution for ophthalmic application, with VHP sterilization. Various challenges have been reported when using conventional, siliconized, prefilled syringe systems for intravitreal injections such as subvisible particles, inflammation, silicone floaters, and intraocular pressure increases. The GORE plunger eliminates the need for silicone oil as a lubricant on the plunger and barrel, while meeting strict container closure and terminal sterilization requirements of ophthalmic applications. This case study presents successful results of deep vacuum VHP terminal sterilization process compatibility with the GORE plunger design and material composition. Test results include primary container integrity, stopper off-gassing/ingress, and visual inspection. Principles of VHP vacuum sterilization process, test cycle configuration, and its main parameters are presented.