Coexistence Of Bipolar Resistive Switching Research Articles

Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Amorphous Ga₂O₃ Based Resistive Random Access Memory Device

Herein, the memory device with a structure of Ag/Ga2O3/Pt has been successfully achieved, and the coexistence of bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors are observed. The results show that the set process of bipolar and unipolar modes can be performed only when a positive voltage is applied with the same compliance current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {cc}}$ </tex-math></inline-formula> ) of 1 mA. For the reset process, the conversion process between bipolar and unipolar modes occurs by changing the polarity of sweeping voltages without <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {cc}}$ </tex-math></inline-formula> . The conduction mechanisms in two modes are conducting filaments (CFs) for the low resistance state (LRS). But for the high resistance states (HRS), it is schottky emission in BRS and space charge limited conduction mechanism in URS, respectively.

Tunable Negative Differential Resistance and Resistive Switching Properties of Amorphous WOₓ Devices

The development of multifunctional electric device is of great significance for improving the integration dense of integrated circuits in the future. Herein, amorphous WO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -based memristor was fabricated and the mechanism of resistance switching was studied in detail. The device exhibited a stable coexistence of bipolar resistive switching (RS) and negative differential resistance (NDR) behaviors at room temperature, which could modulated by changing the annealing time at 300 °C. The optimal high-resistance state (HRS)/low-resistance state (LRS) resistance ratio of ~30 was obtained by postannealing in 100 min. However, both RS and NDR behaviors disappeared with the crystallization of amorphous films when the annealing time was 300 min. The Ohmic conduction mechanism should be responsible for the charge transport of LRS, while the HRS transmission was corporately dominated by the trap-controlled space charge limited conduction (SCLC) and Poole-Frenkel (P-F) emission. The change of trap levels modulated by postannealing was calculated and considered to be the reason for the change of RS and NDR behaviors. Raman spectroscopy provided evidence for the formation of strong W-O bonds, which contributed to the disappearance of RS and NDR behaviors.

Coexistence of Bipolar Resistive Switching and the Negative Differential Resistance Effect from a Kesterite Memristor

Multifunctional electronic devices that possess synchronously multiphysical characteristics are in great demand to be widely used in various complex conditions. Herein, for the most promising light...

Bipolar and unipolar resistive switching modes in Pt/Zn0.99Zr0.01O/Pt structure for multi-bit resistance random access memory

In this work, we report the coexistence of bipolar resistive switching (BRS) and unipolar resistive switching (URS) modes in Pt/Zn0.99Zr0.01O/Pt structure device. After the forming process, this device with URS behavior exhibits either URS mode in the same direction or BRS mode in the opposite direction during the reset process. Controllable multi-state resistances in the low and high resistance states for the BRS mode were obtained by imposing different compliance currents (Icc) and the span of voltage sweeping in the reset process (Vstop). These results suggest that our devices have high potential for the next generation of nonvolatile memory applications.