Integration of active elements into silicon wafers is the first step towards their usage in modern electronic devices based on nanometric structures. Spintronic terahertz emitters, typically composed of nanometer-thin magnetic multilayer, have the outstanding capability of producing high-quality, broadband terahertz pulses using extremely simple heterostructures. A question remains on whether an efficient and cheap integration with other silicon-based technologies can be achieved. We show here that simply having a ferromagnetic layer on silicon produces remarkably efficient spintronic terahertz emission despite the low spin-orbit coupling of the individual components. We achieve this by leveraging on the natural formation of silicides at the interface of a transition metal and silicon. The cobalt silicide layer has good spin-to-charge conversion efficiency that reaches around 1/6 as that of the prototypical spintronics THz-emitter heterostructure cobalt/platinum.