The mechanical, electrical, and thermal behavior of CNT thin films permits reliable measurements in severe environments of high temperature, load, vibration, and humidity. These properties made them promising materials for sensor applications in automotive, air-craft engines, medical instruments, and industrial control systems. Scarce work was done on the simulation of I-V characteristics and sensitivity of the CNT thin film strain sensor. To gather more information about these, the simulation of the CNT sensor device is carried out SILVACO-ATLAS TCAD simulation package. The influence of geometrical parameters like length, width, and thickness on the I-V characteristics, change in resistance, and sensitivity of the sensor material was studied. The results showed that the currents increased for every model on an average of 95% and 195% and the change in resistance decreased by almost 96% and 194% for the respective change in thickness of the material from 1 μm to 2 μm and 3 μm. The currents increased on an average of 100% and 200% and the change in resistance due to strain decreased almost 100% and 200% for the respective change in width of the material from 10 μm to 20 μm and 30 μm. The current decreased by nearly 138% and 282% and the change in resistance due to strain increased by almost 138% and 282% for the respective change in length of the material from 10 μm to 20 μm and 30 μm. The work concludes that the model with the combination of length 30 μm, width 10 μm, and thickness of material 1 μm gives an optimum result of cathode currents 0.0550 mA, 0.0453 mA, and 0.000894 mA and the highest value of change in resistance 9.13 MΩ.
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