CMOS Voltage Controlled Ring Oscillator Research Articles

Temperature compensated and gated CMOS ring oscillator for time-to-digital converter application

This paper presents a CMOS voltage controlled ring oscillator with temperature compensation for low power time-to-digital converters (TDCs). In order to maintain the oscillation frequency stable, a...

Design of a CMOS Voltage-Controlled Ring Oscillator with Bandgap Voltage Reference

Voltage controlled oscillator has been used in every field of the electronics industry, and plays an indispensable role. In the fractional divider, in order to reduce the product size, voltage controlled ring oscillator is used to meet the design requirements, at the same time as much as possible to reduce the area. The design of wide tuning voltage-controlled ring oscillator was designed with the reference voltage source. This design not only could reduce the error brought by the external voltage reference, and was also very good realization structure innovation in the film. This design used 0.5 μ m CMOS Hua technology. The post simulation results show: when the coarse voltage and fine voltage are respectively 1V and 2V, voltage waveform oscillator output swing is 2.4V; when the coarse voltage and fine voltage are respectively 1.13V and 2V, voltage waveform oscillator output swing is 2.8V; when the coarse voltage and fine voltage are respectively 1.3V and 2V, voltage waveform oscillator output swing is 3V. After simulations, the frequency range of the voltage-controlled ring oscillator adjustment is 100 ~ 200MHz.

A Temperature Compensated CMOS Ring Oscillator for Wireless Sensing Applications

This paper presents a CMOS voltage controlled ring oscillator (VCO) with temperature compensation circuit suitable for low-cost and low-power MEMS gas sensor. This compensated ring oscillator is de...

Temperature compensated CMOS ring VCO for MEMS gas sensor

This paper presents a CMOS voltage controlled ring oscillator with temperature compensation circuit suitable for low-cost and low-power gas sensor. To operate at low frequency, a control voltage generated by a CMOS bandgap reference is described and the measurement results of the fabricated chips are presented. The output voltage of the reference is set by resistive subdivision. In order to achieve small area and low power consumption, n-well resistors are used. This design features a reference voltage of 1 V. The chip is fabricated in AMS 0.35 μm CMOS process with an area of 0.032 mm2. Operating at 1.25 V, the output frequency is within 200 ± l0 kHz over the temperature range of −25 to 80 °C with a power consumption of 810 μW.

A Low-Noise Multi-GHz CMOS Multiloop Ring Oscillator With Coarse and Fine Frequency Tuning

A 7-GHz CMOS voltage controlled ring oscillator that employs multiloop technique for frequency boosting is presented in this paper. The circuit permits lower tuning gain through the use of coarse/fine frequency control. The lower tuning gain also translates into a lower sensitivity to the voltage at the control lines. Fabricated in a standard 0.13-mum CMOS process, the proposed voltage-controlled ring oscillator exhibits a low phase noise of -103.4 dBc/Hz at 1 MHz offset from the center frequency of 7.64 GHz, while consuming a current of 40 mA excluding the buffer.

A low-phase-noise 900-MHz CMOS ring oscillator with quadrature output

A 900-MHz two-stage CMOS voltage controlled ring oscillator (VCRO) with quadrature output is presented. The circuit is designed in a 0.18-um CMOS technology and operated on a 1.8-V supply voltage. The VCRO have a tuning range of 730 MHz to 1.43 GHz and good tuning linearity. Between 0 V and 1.1 V of control voltage, the gain of VCRO is around ?620 MHz/V. At 900 MHz, the phase noise of the VCRO is ?106.1 dBc/Hz at 600-KHz frequency offset with power consumption of 65.5 mW.

A 900-MHz CMOS low-phase-noise voltage-controlled ring oscillator

A 900-MHz two-stage CMOS voltage-controlled ring oscillator (VCO) with good phase-noise performance is presented. Implemented in a 0.5-/spl mu/m CMOS technology and at 2.5-V supply voltage, the VCO has a wide operating frequency range from 661.5 MHz to 1.27 GHz with a peak VCO gain (K/sub VCO/) of -630 MHz/V. At 900 MHz, the phase noise of the VCO is -105.5 dBc/Hz at 600-kHz frequency offset with low power consumption of 15.4 mW. The gain and phase mismatches are less than 0.25 dB and 0.5/spl deg/, respectively, which corresponds to an image rejection of better than 31 dB. The chip area is only 125/spl times/102 /spl mu/m/sup 2/.