CMOS SPAD Research Articles

A 48×2 CMOS SPAD Sensor With Regulated Dark Count

A 48×2 CMOS SPAD Sensor With Regulated Dark Count

Online Dark Count Rate Measurements in 150 nm CMOS SPADs Exposed to Low Neutron Fluxes

Online Dark Count Rate Measurements in 150 nm CMOS SPADs Exposed to Low Neutron Fluxes

Effects of X-ray and γ-ray Irradiations on 2D-Planar and 3D-Stacked CMOS SPADs

Effects of X-ray and γ-ray Irradiations on 2D-Planar and 3D-Stacked CMOS SPADs

Study of Proton-Induced Defects in 40-nm CMOS SPADs

Defects induced by 62 MeV protons in SPADs are studied. A study of the Dark Count Rate (DCR) variation after irradiations for different biasing conditions underlines the predominance of field enhancement effects such as Poole-Frenkel effect and phonon-assisted-tunneling over band-to-band tunneling. Activation energy measurements below mid-gap value confirm the important contribution of these field effects. However, unexpected behaviors in these energies are seen: very low activation energies are extracted for SPADs with a DCR induced around 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> counts per second. We attribute them to the contribution of different groups of defects, with different energy level distribution. This analysis is completed with an annealing study between 100 °C and 300 °C. Results for high DCR SPADs correlate well with the presence of defect clusters. Moreover, histogram of the annealing temperature at which the DCR starts to drop displays two peaks at 170 °C and 250 °C. The first one is attributed to phosphorus vacancies and complex cluster of defects with an energy distribution inside the Si bandgap centered above mid-gap. The second one is attributed to clusters of divacancies that also anneal at temperatures around 250 °C.

A Wireless, Battery-Powered Probe Based on a Dual-Tier CMOS SPAD Array for Charged Particle Sensing

A compact probe for charged particle imaging, with potential applications in source activity mapping and radio-guided surgery was designed and tested. The development of this technology holds significant implications for medical imaging, offering healthcare professionals accurate and efficient tools for diagnoses and treatments. To fulfill the portability requirements of these applications, the probe was designed for battery operation and wireless communication with a PC. The core sensor is a dual-layer CMOS SPAD detector, fabricated using 150 nm technology, which uses overlapping cells to produce a coincidence signal and reduce the dark count rate (DCR). The sensor is managed and interfaced with a microcontroller, and custom firmware was developed to facilitate communication with the sensor. The performance of the probe was evaluated by characterizing the on-board SPAD detector in terms of the DCR, and the results were consistent with the characterization measurements taken on the same chip samples using a purposely developed benchtop setup.

Proton-Induced Displacement Damages in 2-D and Stacked CMOS SPADs: Study of Dark Count Rate Degradation

Dark count rate (DCR) degradation is measured on 40-nm 2D and stacked CMOS SPADs after proton irradiations. Mean DCR increase is plotted for different displacement damage doses (DDD) for two biasing conditions. Due to field enhancement effects such as Poole-Frenkel and phonon-assisted-tunneling, Non-Ionizing Energy Loss (NIEL) scaling is found to be dependent on the excess bias. Moreover, the associated damage factors are higher compared to pixels with unity gain photodiodes. A model predicting DCR increase with DDD based on field enhancement factor equations and damage energy deposited by the proton induced recoil spectrum is established and fits well with experimental data. Finally, activation energies are extracted: low values between 25 °C and 60 °C confirm the domination of field effects over thermal generation. Furthermore, large energy discrepancies seen at a fixed DCR increase are suggesting that defect structures could also have an impact on DCR distributions.

Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency

We have proposed a structure design of single-photon avalanche diode fabricated in the Taiwan Semiconductor Manufacturing Company Ltd. (TSMC) 0.18- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> high-voltage (HV) CMOS technology, which improves the limited operating excess voltage for an n-on-p design without any other customized well layer. With the introduction of a deep p-well isolation (ISO) layer, the excess bias is significantly elevated, so that the device exhibits high photon detection probability (PDP) with relatively low dark count rate. The n-on-p-type device is favorable for 3-D-stacked backside illuminated structure and can attain high PDP at longer wavelength. With the improved jitter and after-pulsing probability, our designed device can be suitable for the application of light detection and ranging (LiDAR).

Development of single photon avalanche detectors for NIR light detection

Near-infrared (NIR) light is used in several non-invasive biomedical techniques to measure the blood flow in deep tissues. The BIOSPAD project targets the development of SPAD arrays specifically designed for Diffuse Correlation Spectroscopy (DCS) in the NIR to measure deep tissue microvascular blood flow. In the first stage of the project, single SPADs with multiplication layers buried at different depths have been designed at IFAE and produced in a 150 nm CMOS technology. In this study, we present results of the characterization of SPAD devices with an area of 50 × 50 µm2 operated with an external passive quenching circuit. We compared properties, such as Dark Count Rate (DCR) and Photon Detection Efficiency (PDE) of the different SPAD designs. The PDE for 780 nm light of SPADs with a buried multiplication layer was observed to be in the range of 10–20% with a DCR of the order of 2 kHz. The results of these first prototypes are promising and are being followed up by the development of a new generation of CMOS SPADs designed to further improve the NIR light response.

Solid-State Pulsed Time-of-Flight 3-D Range Imaging Using CMOS SPAD Focal Plane Array Receiver and Block-Based Illumination Techniques

Full realization of a solid-state 3-D range imager based on the pulsed time-of-flight method is presented. The system uses block-based segmented illumination in the transmitter realized with a 16-element common anode laser diode bar. The receiver is based on a single chip 2-D SPAD/TDC 0.35 μm CMOS array with 32 × 128 SPAD pixels and 257 TDCs. Segmentation of the illumination improves the SN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BG</sub> R in the detection and results in simpler receiver realization than in the commonly used flood-illumination approach. The system is capable of producing cm-accurate 3-D range images within a FOV of 40° × 10° up to a range of 15 m in normal office lighting at a frame rate of ∼30 fps using a low average illumination power of only 2.6 mW. In background illumination of ∼20 klux, 3-D range images were captured at a distance of ∼13 m using the gated SPAD approach at a frame rate of ∼1 fps.

NIR Fluorescence lifetime macroscopic imaging with a time-gated SPAD camera.

The performance of SwissSPAD2 (SS2), a large scale, widefield time-gated CMOS SPAD imager developed for fluorescence lifetime imaging, has recently been described in the context of visible range and fluorescence lifetime imaging microscopy (FLIM) of dyes with lifetimes in the 2.5 - 4 ns range. Here, we explore its capabilities in the NIR regime relevant for small animal imaging, where its sensitivity is lower and typical NIR fluorescent dye lifetimes are much shorter (1 ns or less). We carry out this study in a simple macroscopic imaging setup based on a compact NIR picosecond pulsed laser, an engineered diffuser-based illumination optics, and NIR optimized imaging lens suitable for well-plate or small animal imaging. Because laser repetition rates can vary between models, but the synchronization signal frequency accepted by SS2 is fixed to 20 MHz, we first checked that a simple frequency-division scheme enables data recording for different laser repetition rates. Next, we acquired data using different time gate widths, including gates with duration longer than the laser period, and analyzed the resulting data using both standard nonlinear least-square fit (NLSF) and phasor analysis. We show that the fixed synchronization rate and large gate widths characterizing SS2 (10 ns and over) are not an obstacle to accurately extracting lifetime in the 1 ns range and to distinguishing between close lifetimes. In summary, SS2 and similar very large gated SPAD imagers appear as a versatile alternative to other widefield time-resolved detectors for NIR fluorescence lifetime imaging, including preclinical molecular applications.

Layered CMOS SPADs for Low Noise Detection of Charged Particles

This paper reports the characterization of SPAD arrays fabricated in a 150 nm CMOS technology in view of applications to the detection of charged particles. The test vehicle contains SPADs with different active area and operated with different quenching techniques, either passive or active. The set of devices under test (DUTs) consists of single-tier chips, about 30 mm2 in area, with dual-tier structures where two chips are face-to-face bump bonded to each other. In the dual-layer structure obtained in this way, the coincidence signal between overlapping SPAD pairs is read out, with a beneficial impact on the dark count noise performance. The DUT characterization was mainly focused on studying the breakdown voltage in the single-layer arrays and the dark count rate (DCR), measured in different working conditions, in both the single- and the dual-layer structures. Comparison between the DCR performance of the two configurations clearly emphasizes the advantage of the coincidence readout architecture.

Time-Resolved Raman Spectrometer With High Fluorescence Rejection Based on a CMOS SPAD Line Sensor and a 573-nm Pulsed Laser

A time-resolved Raman spectrometer is demonstrated based on a 256 × 8 single-photon avalanche diodes fabricated in CMOS technology (CMOS SPAD) line sensor and a 573-nm fiber-coupled diamond Raman laser delivering pulses with duration below 100-ps full-width at half-maximum (FWHM). The collected backscattered light from the sample is dispersed on the line sensor using a custom volume holographic grating having 1800 lines/mm. Efficient fluorescence rejection in the Raman measurements is achieved due to a combination of time gating on sub-100-ps time scale and a 573-nm excitation wavelength. To demonstrate the performance of the spectrometer, fluorescent oil samples were measured. For organic sesame seed oil having a continuous wave (CW) mode fluorescence-to-Raman ratio of 10.5 and a fluorescence lifetime of 2.7 ns, a signal-to-distortion value of 76.2 was achieved. For roasted sesame seed oil having a CW mode fluorescence-to-Raman ratio of 82 and a fluorescence lifetime of 2.2 ns, a signal-to-distortion value of 28.2 was achieved. In both cases, the fluorescence-to-Raman ratio was reduced by a factor of 24-25 owing to time gating. For organic oil, spectral distortion was dominated by dark counts, while for the more fluorescent roasted oil, the main source of spectral distortion was timing skew of the sensor. With the presented postprocessing techniques, the level of distortion could be reduced by 88%-89% for both samples. Compared with common 532-nm excitation, approximately 73% lower fluorescence-to-Raman ratio was observed for 573-nm excitation when analyzing the organic sesame seed oil.

Characterization of space-momentum entangled photons with a time resolving CMOS SPAD array.

Single-photon avalanche diode arrays can provide both the spatial and temporal information of each detected photon. We present here the characterization of spatially entangled photons with a 32 × 32 pixel sensor, specifically designed for quantum imaging applications. The sensor is time-tagging each detection event at pixel level with sub-nanosecond accuracy within frames of 50 ns. The spatial correlations between any number of detections in a defined temporal window can thus be directly extracted from the data.The space-momentum entanglement of photon pairs is demonstrated by violating an EPR-type inequality directly from the measured near-field correlations and far-field anti-correlations.

Capsule Endoscopy Compatible Fluorescence Imager Demonstrated Using Bowel Cancer Tumours

We demonstrate a proof of concept highly miniaturised fluorescence imager and its application to detecting cancer in resected human colon cancer tissues. Fluorescence imaging modalities have already been successfully implemented in traditional endoscopy. However, the procedure still causes discomfort and requires sedation. Wireless fluorescence capsule endoscopy has the potential to improve diagnostic accuracy with less inconvenience for patients. In this paper we present a 5 mm $\times6$ mm $\times5$ mm optical block that is small enough to integrate into a capsule endoscope. The block integrates ultrathin filters for optical isolation and was successfully integrated with a sensitive CMOS SPAD array to detect green fluorescence from Flavin Adenine Dinucleotide (FAD), which is an endogenous fluorophore responsible for autofluorescence in human tissues, and fluorescence from the cancer selective molecular probe ProteoGREEN™-gGlu used to label colorectal cancer cells. In vitro studies were validated using a commercial Modulus™ Microplate reader. The potential use of the device in capsule endoscopy was further validated by imaging healthy and malignant resected human tissues from the colon to detect changes in autofluorescence signal that are crucial for cancer diagnosis.

Radiation induced degradation in a 150-nm CMOS SPADs device

The effects induced by radiation on an innovative photo-sensor consisting of Single-Photon Avalanche Diodes arrays, implemented in a 150-nm CMOS technology, are presented. Samples were irradiated with a proton beam at different doses, and the impact of radiation-induced damage on the performance of the devices in terms of Dark Count Rate has been estimated. Furthermore, possible methods to reduce the impact of radiation-induced damage are discussed.

Efficient random number generation techniques for CMOS single-photon avalanche diode array exploiting fast time tagging units

This work presents new techniques to produce true random bits by exploiting single photon time of arrival. Two FPGA-based QRNG devices are presented: Randy which uses one discrete SPAD and LinoSPAD which uses a CMOS SPAD array, along with a time-to-digital converter (TDC). Post-processing procedures are explained in order to extract randomness taking care of SPAD and TDC non-idealities. These procedures are based on the application of Peres [Y. Peres, Ann. Statist.20, 590 (1992)] and Zhou-Bruk [H. Zhou and J. Bruck, arXiv:1209.0726 (2012)] extraction algorithms. Achieved generation rates are 1.8 Mbit/s for Randy device and 310 Mbit/s for LinoSPAD device. Randy QRNG also features a real time procedure which was used for the realization of fundamental tests of physics.

Characterization-Based Modeling of Retriggering and Afterpulsing for Passively Quenched CMOS SPADs

The current trend in the design of systems based on CMOS SPADs is to adopt smaller technological nodes, allowing the co-integration of additional electronics for the implementation of complex digital systems on chip. Due to their simplicity, a way to reduce the area occupied by the integrated electronics is the use of passive quenching circuits (PQCs) instead of active (AQCs) or mixed (MQCs) ones. However, the recharge phase in PQCs is slower, so the device can be retriggered before this phase ends. This paper studies the phenomena of afterpulsing and retriggering, depending on the characteristics of the SPADs and the working conditions. In order to do that, a test chip containing SPADs of different size has been characterized in several operating environments. A mathematical model has been proposed for fitting afterpulsing phenomenon. It is shown that retriggering can be also described in terms of this model, suggesting that it is linked to carriers trapped in the shallow levels of the semiconductor and that should be taken into account when considering the total amount of afterpulsing events.

A Compact Analog Histogramming SPAD-Based CMOS Chip for Time-Resolved Fluorescence

Time-resolved fluorescence measurement is extraordinarily powerful in the analysis of substances due to its effectiveness in eliminating measurement artifacts. Some fluorescence measurements are still conducted on CMOS chips with the decay times determined after reading the data off the chip and fitting the fluorescence decay histogram. We present a novel approach in which an analog CMOS chip divides the fluorescence decay time into slices and classifies the photons according to their arrival times at a CMOS SPAD sensor. The chip was fabricated in a 1P6M 0.18μm HV-CMOS process. The slice timings can be tailored from 168ps to 4.9 ns, covering most fluorescence decay times. 9 timing windows are generated per pixel that count up to 13 b each, with a resolution of 0.16 mV/photon, for a maximum output voltage of 1.3 V, in an area of 150 μm × 50 μm. Here, we report on the first practical application of this circuit, which integrates an array of 5pixels in a single chip and has an excitation light and a microfluidic chip of up to 3 channels. This system could determine the decay time of quantum dots in 20 nl of solution. Thus, this paper could help in the development of a point-of-care device based on time-resolved fluorescence.

Perimeter Gated Single Photon Avalanche Diodes in Sub-Micron and Deep-Submicron CMOS Processes

A perimeter gated SPAD (PGSPAD), a SPAD with an additional gate terminal, prevents premature perimeter breakdown in standard CMOS SPADs. At the same time, a PGSPAD takes advantage of the benefits of standard CMOS. This includes low cost and high electronics integration capability. In this work, we simulate the effect of the applied voltage at the perimeter gate to develop a consistent electric field distribution at the junction through physical device simulation. Additionally, the effect of the shape of the device on the electric field distribution has been examined using device simulation. Simulations show circular shape devices provide a more uniform electric field distribution at the junction compared to that of rectangular and octagonal devices. We fabricated PGSPAD devices in a sub-micron process (0.5 μm CMOS process and 0.5 μm high voltage CMOS process) and a deep-submicron process (180 nm CMOS process). Experimental results show that the breakdown voltage increases with gate voltage. The breakdown voltage increases by approximately 1.5 V and 2.5 V with increasing applied gate voltage magnitude from 0 V to 6 V for devices fabricated in 0.5 μm and 180 nm standard CMOS process respectively.

16‐2: Distinguished Student Paper: Characterization of Electronic Displays using Advanced CMOS Single Photon Avalanche Diode Image Sensors

Advanced CMOS Single Photon Avalanche Diode Arrays have the potential to reveal characteristics of electronic display panels that have, until now, been extremely challenging or impossible to measure routinely. We demonstrate the use of a CMOS SPAD array to make optical measurements of pixels of an OLED microdisplay at very high sampling rates, very low light levels and over a very wide dynamic range.