NaNb 1 − x Zr x O 3 (NZr) ceramics with 0 ≤ x ≤ 0.15 are prepared via solid-state reaction route. Structural, microstructural, and electronic state investigations of NZr samples were performed using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and X-ray photoelectron spectroscopy (XPS), respectively. Rietveld refinement reveals that NZr samples crystallize in the orthorhombic phase similar to room temperature P b m a phase of NaNbO 3 . Minor quantities of ZrO 2 are detected for higher NZr-composition, which suppress the grain growth of NZr ceramics. XPS reveals that small amount of Zr substitution in NaNbO 3 also creates an ambiance of unbalanced charge neutrality. The dielectric characteristics of NZr samples are investigated from -190 to 450 °C temperature range in frequency window 1 KHz–1 MHz for both the heating and cooling cycles. A clear thermal hysteresis loop is obtained in each composition and the observed anomaly corresponds to P (AFE) - R (AFE) polymorphic phase transition. As x grows, ϵ ′ (T) becomes more dispersive and strongly depend on applied field. The activation energy obtained from the analysis of Arrhenius relation indicates that the oxygen vacancies are responsible for conduction process of the material. Impedance analysis confirms the NTCR behavior and non-Debye relaxation of the material. • The polycrystalline NZr ceramics are prepared by solid state reaction method. • Small amount of Zr dopant creates an ambiance of unbalanced charge neutrality. • The AFE (P) to AFE (R) phase transition is confirmed by ɛ ’ (T) analysis. • Impedance spectroscopic studies reveal the NTCR behavior of NZr ceramics. • The non-Debye type nature of material is verified by Nyquist analysis.