Chemo-mechanical Grinding Process Research Articles

Mechanical effect of abrasives on silicon surface in chemo-mechanical grinding

To obtain high-quality surfaces and subsurfaces of ground silicon wafers, chemo-mechanical grinding (CMG) for silicon has been developed by inducing chemical reactions into grinding. Chemical reactions between abrasives and silicon during CMG process have been proved in previous studies. The mechanical effect of abrasives in CMG process is not fully understood. To investigate abrasives’ mechanical effect on material removal and subsurface damage of silicon in CMG process, silicon nanoscratching experiments with CeO2 indenter under a progressive normal load were conducted, and microtopographies of scratch surface and subsurface were observed. For comparison, silicon nanoscratching experiments with diamond indenter were also conducted. Finite element models of silicon nanoscratching with CeO2 and diamond indenters were built to investigate the relationship between stress distribution and damage evolution of silicon. Experimental investigations and simulation results indicate that no obvious material removal of silicon or serious subsurface damage is generated by CeO2 indenter's mechanical action because the wear of CeO2 indenter leads to the release of the stress on silicon. Material removal of silicon during CMG process relies on chemical reactions between soft abrasives and silicon other than stress on silicon generated by soft abrasives.

Chemo-mechanical grinding by applying grain boundary cohesion fixed abrasive for monocrystal sapphire

This paper presents a novel fixed abrasive tool namely grain boundary cohesion fixed abrasive pellet (GBCFAP) which is able to provide higher finishing efficiency as well as better surface/subsurface quality of sapphire substrate during the chemo-mechanical grinding (CMG) process. The manufacturing procedures of GBCFAP are introduced in detail in this paper. It is found that the sintering temperature plays an important role to the strength of GBCFAP, and the strength of GBFCAP could be flexibly adjusted by sintering temperature. The experiment result suggests that the recommended sintering temperature ranges from 600 to 650 °C according to current CMG conditions. Meanwhile, comparing with conventional resin bound CMG wheel, 600 °C sintered GBCFAP CMG wheel performs better in terms of material removal rate and surface/subsurface quality since the chemical effect and mechanical effect during CMG process are well balanced. Meanwhile, the solid phase reaction between sapphire and Cr2O3 abrasive is demonstrated by TEM observation and XPS quantification.

Study on the potential of chemo-mechanical-grinding (CMG) process of sapphire wafer

Chemo-mechanical-grinding (CMG) is a hybrid process which integrates chemical reaction and mechanical grinding between abrasives and workpiece into one process. It has been successfully applied into manufacturing process of silicon wafers where both geometric accuracy and surface quality are required. This paper aims to study the potential of CMG process in manufacturing process of single crystal sapphire wafers. The basic material removal mechanism in terms of chemical effect and mechanical effect in CMG process has been analysed based on experiment results of two different kinds of CMG wheels. The experiment results suggest that chromium oxide (Cr2O3) performs better than silica (SiO2) in both material removal rate (MRR) and surface quality. It also reveals that, no matter under dry condition or wet condition, CMG is with potential to achieve excellent surface quality and impressive geometric accuracy of sapphire wafer. Meanwhile, test result by Raman spectrum shows that, by using Cr2O3 as abrasive, the sub-surface damage of sapphire wafer is hardly to be detected. Transmission electron microscopy (TEM) tells that the sub-surface damage, about less than 50 nm, might remain on the top surface if chemical effect is not sufficient enough to meet the balance with mechanical effect in CMG process.

Experimental Investigation on Hybrid Technology of Ultrasonic Vibration Assisted Chemo-Mechanical Grinding (CMG) Silicon Wafer

For the final finishing of the substrate surface, Chemo-mechanical polishing (CMP) is often utilized. Those processes are able to offer a great sur-face roughness, but sacrifice profile accuracy. On the other hand, Chemo-mechanical grinding (CMG) is potentially emerging defect-free machining process which combines the advantages of CMP. In order to simultaneously achieve high surface quality and high profile accuracy, CMG process has been applied into machining of large size quartz glass substrates for photomask use. In this paper, based on the characteristics of higher machining efficiency and higher surface quality of ultrasonic vibration machining, a new ultrasonic vibration assisted CMG of silicon wafer hybrid technique is achieved by designing elliptical vibrator with longitudinal mode and bending mode. The experimental results show that under the elliptic ultrasonic vibration assistance, the surface roughness is decreased significantly, the surface quality is improved obviously, and moreover caused little or even doesn’t lead to the surface damage.

Effect of Wheel Additive On Chemo-Mechanical Grinding (CMG) of Single Crystal Si Wafer

Chemo-mechanical grinding (CMG) process is a promising process for large-sized Si substrate fabrication at low cost. However, effect of additive in CMG wheel is not completely understood yet. In this paper, three different CMG wheels were developed, in which one excluded additive and the other two contained two kinds of additive i.e. silicon dioxide and sodium carbonate. Grinding experiments were conducted to explore the influence of exclusion of additive and inclusion of different kinds of additive on CMG performance. The grinding characteristics of the three wheels were also analyzed and discussed to reveal the roles of wheel compositions in CMG process. This work provides some fundamental insights for the selection of different types of additive for optimization of CMG wheel.

Effects of Sodium Carbonate and Ceria Concentration on Chemo-Mechanical Grinding of Single Crystal Si Wafer

Chemo-mechanical grinding (CMG) process is a promising process for large-sized Si substrate fabrication at low cost. An encountered issue in current CMG process of Silicon (Si) wafers is metallic contaminations on ground Si wafer surface, which is attributed to the existence of sodium carbonate in wheel compounds. In this paper, four different CMG wheels were developed and grinding experiments were conducted to study the effects of exclusion of sodium carbonate and concentration of ceria abrasive on grinding performance. The grinding characteristics of the four wheels were analysized and discussed to reveal the effects of different compositions.

Research on chemo-mechanical grinding of large size quartz glass substrate

Finishing process of quartz glass substrate is meeting great challenges to fulfill the requirements of photomask for photolithography applications. For the final finishing of the substrate surface, chemical mechanical polishing (CMP) is often utilized. Those free abrasive processes are able to offer a great surface roughness, but sacrifice profile accuracy. On the other hand, the fixed abrasive process or grinding is known as a promising solution to improve accuracy of profile geometry, but always introduces damaged layer. Chemo-mechanical grinding (CMG) is potentially emerging defect-free machining process which combines the advantages of fixed abrasive machining and CMP. In order to simultaneously achieve high surface quality and high profile accuracy, CMG process has been applied into machining of large size quartz glass substrates for photomask use. Reported in this paper are CMG performances in finishing of quartz glass substrates including material removal rate (MRR), surface roughness, flatness and optical characteristics.

Elimination of surface scratch/texture on the surface of single crystal Si substrate in chemo-mechanical grinding (CMG) process

Si wafers are widely used as a substrate material for fabricating ICs. The quality of ICs depends on the quality of Si wafers. The chemo-mechanical grinding (CMG) with soft abrasive grinding wheels (SAGW) has been recently found to be a great potential process for machining Si wafers to generate superior surface quality at low cost. However, there have been very few studies on observing variation of topography of scratch/texture and understanding basic eliminating process of scratch/texture on the ground Si wafer. Furthermore, few reports on the variation of surface roughness and material removal rate (MRR) during CMG process and relationship between MRR and surface roughness during CMG process are presented. In this paper, a series of CMG experiments have been conducted to study the elimination process of artificial scratches created on etched Si surfaces and residual textures induced by SD1500 diamond wheel in CMG process, and to understand the topography variations of Si surfaces and some basic grinding characteristics during CMG process.

Material Removal Mechanism of Chemo-Mechanical Grinding (CMG) of Si Wafer by Using Soft Abrasive Grinding Wheel (SAGW)

An innovative fixed abrasive grinding process of chemo-mechanical grinding (CMG) by using soft abrasive grinding wheel (SAGW) has been recently proposed to achieve a damage-free ground workpiece surface. The basic principle, ideas and characteristics of CMG with SAGW are briefly introduced in this paper. The CMG experiments using newly developed SAGW for Si wafer are conducted at the condition of dry grinding. The grinding performances are evaluated and analyzed in terms of surface roughness, surface topography and surface/subsurface damage of ground wafer by use of Zygo interferometer, Scan Introduction ning Electron Microscope (SEM) and Cross-section Transmission Electron Microscope (Cross-section TEM). The component of product of ground Si surface is studied by X-ray Photoelectron Spectroscopy (XPS) to verify chemical reaction between the abrasive / additives of grinding wheel and Si wafer. The CMG process model by using SAGW is developed to understand the material removal mechanism and generation principle of damage-free surface. The study results show that the material removal mechanism of CMG by using SAGW can be explained as a hybrid process of chemical and mechanical action.

Microstructural Analysis for Si Wafer after CMG Process

The single crystal of Si is still one of the most important candidates among other materials including Single crystals of SiC, GaN, C(diamond) or compound semiconductors. The innovative process as called CMG(Chemo-Mechanical-Grinding) for Si wafer has been recently developed which is different from conventional CMP(Chemo-Mechanical-Polishing ) process. The CMG process can be done under dry conditions using CeO2 based solid bulk abrasives. The microstructures for surface and subsurface of Si single crystal after CMG process were analyzed using TEM/EDX, AFM, MFP-3D Microscope. The mechanism of CMG process was also investigated by X-ray diffraction and ICP chemical analysis using products by chemical reaction between Si and CeO2 abrasives. The results showed that Si single crystal after CMG had, 1) no defects even Si lattice revel or mechanical imperfections,2) better surface roughness as compared to CMP process. The CMG mechanism concluded that CeO2 reacted with Si producing Ce-Si-O amorphous phase.

ＳｉウエハのＣｈｅｍｏ‐Ｍｅｃｈａｎｉｃａｌ‐Ｇｒｉｎｄｉｎｇ（ＣＭＧ）に関する研究 第１報 ＣＭＧ砥石の開発

At ductile-mode grinding, the material is removed within a plastic region so that no crack remains on the corresponding surface after machining. By effectively using this mechanism, fixed abrasive process is seen as a promising solution to replace the lapping and polishing processes in manufacturing of large scale Si wafer. In principle, however, there is still plastic strains developed. This fact makes it very difficult to completely remove the damaged subsurface layer by fixed abrasives. To achieve a perfectly damage-free surface, this research has proposed a new chemo-mechanical-grinding (CMG) process by adding chemical effect into the grinding process. First described in this paper are the experimental results showing the feasibilities of the CMG process in reducing subsurface damage. Based on the preliminary test results, CMG wheels which contain chemically active abrasives and additives have been developed and characterized with a wide range of pH from acidity to alkalinity accordingly. The CMG has been mainly evaluated by the grinding performance on bear Si wafers, comparing to grinding with diamond wheels. From the technical and economical points of view, CMG is also highly expected to perform planarization function instead of chemical mechanical polishing (CMP) process. The primary tests of CMG have been done on shallow trench isolation (STI) patterned wafer to investigate the pattern dependency.