Charge-transfer Insulator Research Articles

Magneto-optical conductivity of a band-inverted charge transfer insulator

Magneto-optical conductivity of a band-inverted charge transfer insulator

Nature of Excitons and Their Ligand-Mediated Delocalization in Nickel Dihalide Charge-Transfer Insulators

The fundamental optical excitations of correlated transition-metal compounds are typically identified with multielectronic transitions localized at the transition-metal site, such as dd transitions. In this vein, intense interest has surrounded the appearance of sharp, below-band-gap optical transitions, i.e., excitons, within the magnetic phase of correlated Ni2+ van der Waals magnets. The interplay of magnetic and charge-transfer insulating ground states in Ni2+ systems raises intriguing questions on the roles of long-range magnetic order and of metal-ligand charge transfer in the exciton nature, which inspired microscopic descriptions beyond typical dd excitations. Here we study the impact of charge transfer and magnetic order on the excitation spectrum of the nickel dihalides (NiX2, X=Cl, Br, and I) using Ni-L3 edge resonant inelastic x-ray scattering (RIXS). In all compounds, we detect sharp excitations, analogous to the recently reported excitons, and assign them to spin-singlet multiplets of octahedrally coordinated Ni2+ stabilized by intra-atomic Hund’s exchange. Additionally, we demonstrate that these excitons are dispersive using momentum-resolved RIXS. Our data evidence a ligand-mediated multiplet dispersion, which is tuned by the charge-transfer gap and independent of the presence of long-range magnetic order. This reveals the mechanisms governing nonlocal interactions of on-site dd excitations with the surrounding crystal or magnetic structure, in analogy to ground-state superexchange. These measurements thus establish the roles of magnetic order, self-doped ligand holes, and intersite-coupling mechanisms for the properties of dd excitations in charge-transfer insulators. Published by the American Physical Society 2024

Orbital-Resolved DFT+U for Molecules and Solids.

We present an orbital-resolved extension of the Hubbard U correction to density-functional theory (DFT). Compared to the conventional shell-averaged approach, the prediction of energetic, electronic and structural properties is strongly improved, particularly for compounds characterized by both localized and hybridized states in the Hubbard manifold. The numerical values of all Hubbard parameters are readily obtained from linear-response calculations. The relevance of this more refined approach is showcased by its application to bulk solids pyrite (FeS2) and pyrolusite (β-MnO2), as well as to six Fe(II) molecular complexes. Our findings indicate that a careful definition of Hubbard manifolds is indispensable for extending the applicability of DFT+U beyond its current boundaries. The present orbital-resolved scheme aims to provide a computationally undemanding yet accurate tool for electronic structure calculations of charge-transfer insulators, transition-metal (TM) complexes and other compounds displaying significant orbital hybridization.

The interplay of field-tunable strongly correlated states in a multi-orbital moiré system

The interplay of charge, spin, lattice and orbital degrees of freedom leads to a variety of emergent phenomena in strongly correlated systems. In transition-metal-dichalcogenide-based moiré heterostructures, recent observations of correlated phases can be described by triangular-lattice single-orbital Hubbard models based on moiré bands derived from the Brillouin-zone corners—the so-called K valleys. Richer phase diagrams described by multi-orbital Hubbard models are possible with hexagonal lattices that host moiré bands at the zone centre—called Γ valleys—or an additional layer degree of freedom. Here we report the tunable interaction between strongly correlated hole states hosted by Γ- and K-derived bands in a heterostructure of monolayer MoSe2 and bilayer 2H WSe2. We characterize the behaviour of exciton–polarons to distinguish the layer and valley degrees of freedom. The Γ band gives rise to a charge-transfer insulator described by a two-orbital Hubbard model. An out-of-plane electric field re-orders the Γ- and K-derived bands and drives the redistribution of carriers to the layer-polarized K orbital, generating Wigner crystals and Mott insulating states. Finally, we obtain degeneracy of the Γ and K orbitals at the Fermi level and observe interacting correlated states with phase transitions dependent on the doping density. Our results establish a platform to investigate multi-orbital Hubbard model Hamiltonians.

Novel ternary AgIICoIIIF5 fluoride: synthesis, structure and magnetic characteristics.

We present a new compound in the silver-cobalt-fluoride system, featuring paramagnetic silver (d9) and high-spin cobalt (d6), synthesized by solid-state method in an autoclave under F2 overpressure. Based on powder X-ray diffraction, we determined that AgIICoIIIF5 crystallizes in a monoclinic system with space group C2/c. The calculated fundamental band-gap falls in the visible range of the electromagnetic spectrum, and the compound has the character of charge-transfer insulator. AgCoF5 is likely a ferrimagnet with one predominant superexchange magnetic interaction constant between mixed spin cations (Ag-Co) of -62 meV (SCAN result). Magnetometric measurements conducted on a powdered sample allowed the identification of a transition at 128 K, which could indicate magnetic ordering.

Suppressing Surface Ligand-to-Metal Charge Transfer toward Stable High-Voltage LiCoO2.

Increasing the charging cutoff voltage is a viable approach to push the energy density limits of LiCoO2 and meet the requirements of the rapid development of 3C electronics. However, an irreversible oxygen redox is readily triggered by the high charging voltage, which severely restricts practical applications of high-voltage LiCoO2. In this study, we propose a modification strategy via suppressing surface ligand-to-metal charge transfer to inhibit the oxygen redox-induced structure instability. A d0 electronic structure Zr4+ is selected as the charge transfer insulator and successfully doped into the surface lattice of LiCoO2. Using a combination of theoretical calculations, ex situ X-ray absorption spectra, and in situ differential electrochemical mass spectrometry analysis, our results show that the modified LiCoO2 exhibits suppressed oxygen redox activity and stable redox electrochemistry. As a result, it demonstrates a robust long-cycle lattice structure with a practically eliminated voltage decay (0.17 mV/cycle) and an excellent capacity retention of 89.4% after 100 cycles at 4.6 V. More broadly, this work provides a new perspective on suppressing the oxygen redox activity through modulating surface ligand-to-metal charge transfer for achieving a stable high-voltage ion storage structure.

Exciton-spin interactions in antiferromagnetic charge-transfer insulators

Exciton-spin interactions in antiferromagnetic charge-transfer insulators

Pb10−x Cu x (PO4)6O: a Mott or charge transfer insulator in need of further doping for (super)conductivity

We briefly review the status quo of research on the putative superconductor Pb9Cu(PO4)6O also known as LK-99. Further, we provide ab initio derived tight-binding parameters for a two- and five-band model, and solve these in dynamical-mean-field theory. The interaction-to-bandwidth ratio makes LK-99 a Mott or charge transfer insulator. Electron or hole doping (which is different from substituting Pb by Cu and thus differs from LK-99) is required to make it metallic and potentially superconducting.

Alternative Structure Model of Correlated Charge Density Wave in Monolayer 1T-Nb(Ta)Se2.

The putative Mott charge density wave (CDW) phases of monolayer 1T-NbSe2 and 1T-TaSe2 have attracted a lot of recent interest due to the unexpected orbital texture of their Mott-Hubbard states and the superstructure related to an exotic possibility of a quantum spin liquid with a spinon Fermi surface. The origins of the orbital texture and the superstructure have been, however, elusive. We find by using density functional theory calculations that these CDW phases can have an alternative metastable structure, an anion (Se) centered cluster, in contrast to the prevailing model of a cation (Nb or Ta) centered David star cluster. This structure can be stabilized by the charge transfer from the bilayer graphene/SiC substrate used commonly in the experiments. The anion-centered structure has a similar electronic band structure of a charge transfer insulator to that of DS clusters but naturally explains the orbital texture of the upper Hubbard band from simply its atomic structure. Moreover, this band structure exhibits a Fermi surface nesting to possibly break the symmetry spontaneously into a -R30° superstructure observed experimentally. The resulting ground state of the superstructure is shown to be a trivial band insulator, in contrast to exotic proposals. This result emphasizes the huge structural flexibility of these heteroexpitaxial monolayers, for which careful studies on atomic structures and interactions with substrates are highly requested.

Infinite-layer nickelates as Ni-eg Hund’s metals

The recent and exciting discovery of superconductivity in the hole-doped infinite-layer nickelate Nd1−δSrδNiO2 draws strong attention to correlated quantum materials. From a theoretical view point, this class of unconventional superconducting materials provides an opportunity to unveil a physics hidden in correlated quantum materials. Here we study the temperature and doping dependence of the local spectrum as well as the charge, spin and orbital susceptibilities from first principles. By using ab initio LQSGW+DMFT methodology, we show that onsite Hund’s coupling in Ni-d orbitals gives rise to multiple signatures of Hund’s metallic phase in Ni-eg orbitals. The proposed picture of the nickelates as an eg (two orbital) Hund’s metal differs from the picture of the Fe-based superconductors as a five orbital Hund’s metal as well as the picture of the cuprates as doped charge transfer insulators. Our finding uncover a new class of the Hund’s metals and has potential implications for the broad range of correlated two orbital systems away from half-filling.

Linear-in-temperature resistivity for optimally superconducting (Nd,Sr)NiO2.

The occurrence of superconductivity in proximity to various strongly correlated phases of matter has drawn extensive focus on their normal state properties, to develop an understanding of the state from which superconductivity emerges1-4. The recent finding of superconductivity in layered nickelates raises similar interests5-8. However, transport measurements of doped infinite-layer nickelate thin films have been hampered by materials limitations of these metastable compounds: in particular, a high density of extended defects9-11. Here, by moving to a substrate (LaAlO3)0.3(Sr2TaAlO6)0.7 that better stabilizes the growth and reduction conditions, we can synthesize the doping series of Nd1-xSrxNiO2 essentially free from extended defects. In their absence, the normal state resistivity shows a low-temperature upturn in the underdoped regime, linear behaviour near optimal doping and quadratic temperature dependence for overdoping. This is phenomenologically similar to the copper oxides2,12 despite key distinctions-namely, the absence of an insulating parent compound5,6,9,10, multiband electronic structure13,14 and a Mott-Hubbard orbital alignment rather than the charge-transfer insulator of the copper oxides15,16. We further observe an enhancement of superconductivity, both in terms of transition temperature and range of doping. These results indicate a convergence in the electronic properties of both superconducting families as the scale of disorder in the nickelates is reduced.

Confining bulk molecular O2 by inhibiting charge transfer on surface anions toward stable redox electrochemistry in layered oxide cathodes

Molecular O2 has been clarified as an important O-oxidation model in anionic redox, the charge compensation provided by which pushes energy-density limits of layered oxide cathodes. However, how to confine the bulk-formed molecular O2 and retard its conversation to free gaseous O2 (↑), an origin of unstable redox electrochemistry, remains open questions. Here, we propose a strategy via tuning relative values of Mott–Hubbard U and charge-transfer energy Δ to suppress charge transfer on surface anions to confine the bulk molecular O2. Supported by theoretical calculations, Nb5+ without 4d electrons which can enable U < < Δ is selected as a charge-transfer insulator. The thus Nb5+-surface-tailored model compound Na0.67Fe0.5Mn0.5O2 shows an oxygen-redox-inactive surface and well-confined bulk molecular O2 as directly uncovered by soft X-ray absorption spectroscopy and 50 K-electron paramagnetic resonance results respectively. Meanwhile, a stable redox electrochemistry with enhanced cycling stability, inhibited voltage decay and eliminated P2-O2 phase transitions is observed because of the well-caged bulk O2. More broadly, this work presents a versatile access to stabilize the important O-oxidation model, enriching approaches of stabilizing the anionic redox electrochemistry.

Pair binding and enhancement of pairing correlations in asymmetric Hubbard ladders

Asymmetric two-leg Hubbard ladders with different on-site interactions $U_y$ and hoppings $t_y$ on each leg are investigated using the density matrix renormalization group method and exact diagonalizations. The pairing found in symmetric ladders is robust against the introduction of the leg asymmetry. When studying pairing, one-band Hubbard ladder models are better described as one-dimensional correlated two-band models than as sublattices of higher dimensional systems. The asymmetric Hubbard ladder provides us with a simple model for studying pairing in the crossover regime between charge transfer and Mott insulators.

Theoretical proposal and material realization of ferromagnetic negative charge-transfer energy insulator

Here we propose another type of ferromagnetic semiconductors: ferromagnetic negative charge-transfer insulator (FNCTI). In FNCTI, the negative charge-transfer states strongly enhance the ferromagnetic (FM) exchange interactions and the orbital hybridization gap permits the magnetic molecular orbitals as the underlying magnetic units rather than local atomic orbitals. Thus the FM exchange interactions are rather strong and decay slowly due to the large spearding of magnetic molecular orbitals. This is distinct from the superexchange mechanism where FM exchange interactions are quite weak as summarized in the well-known Goodenough-Kanamori-Anderson semi-empirical rules.Through first-principle calculations with the hybrid functional, PbO-type CrAs monolayer is mapped out to be a FNCTI, which possesses a band gap $\sim$ 0.35 eV, FM nearest-/next-nearest-neighbor exchange coupling strength $\sim$ 57/40 meV, and a high $T_c$ $\sim$ 1500 K respectively. It is believed that the existence of FNCTI validates the long-pending hypothesis by D. I. Khomskii and G. A. Sawatzky in 1997 [Solid State Commun. 102, 87 (1997)].

Resistive switching polarity reversal due to ferroelectrically induced phase transition at BiFeO3/Ca0.96Ce0.04MnO3 heterostructures

Ferroelectric resistive switching (RS) devices with functional oxide electrodes allow controlled emergent phenomena at an interface. Here, we demonstrate RS polarity reversal due to ferroelectrically induced phase transition at a doped charge transfer insulator interface. For BiFeO3/Ca0.96Ce0.04MnO3 bilayers grown on a NdAlO3 substrate, by applying voltages to a Ca0.96Ce0.04MnO3 bottom electrode, the resistance changes from a high resistance state (HRS) to a low resistance state (LRS) during a positive voltage cycle (0 → 3 → 0 V), and from a LRS to a HRS during a negative voltage cycle (0 → −3 → 0 V). The RS polarity is completely opposite the expected RS behavior in ferroelectric heterostructures induced by polarization reversal. It is proposed that the unique resistance switching polarity is attributed to the band-filling controlled metal-insulator transition in a Ca0.96Ce0.04MnO3 film, triggered by ferroelectric based electrostatic doping. The results address the importance of ferroelectric field effect on the electronic properties of the interfacial system in ferroelectric/complex oxide-based resistive memory devices.

Switching between Mott-Hubbard and Hund Physics in Moiré Quantum Simulators.

Mott-Hubbard and Hund electron correlations have been realized thus far in separate classes of materials. Here, we show that a single moiré homobilayer encompasses both kinds of physics in a controllable manner. We develop a microscopic multiband model that we solve by dynamical mean-field theory to nonperturbatively address the local many-body correlations. We demonstrate how tuning with twist angle, dielectric screening, and hole density allows us to switch between Mott-Hubbard and Hund correlated states in a twisted WSe2 bilayer. The underlying mechanism is based on controlling Coulomb-interaction-driven orbital polarization and the energetics of concomitant local singlet and triplet spin configurations. From a comparison to recent experimental transport data, we find signatures of a filling-controlled transition from a triplet charge-transfer insulator to a Hund-Mott metal. Our finding establishes twisted transition-metal dichalcogenides as a tunable platform for exotic phases of quantum matter emerging from large local spin moments.

Dual Character of the Insulating State in the van der Waals Fe1-xNixPS3 Alloyed Compounds.

The electronic structure of the alloyed transition-metal phosphorus trichalcogenide van der Waals Fe1-xNixPS3 compounds is studied using X-ray absorption spectroscopy and resonant photoelectron spectroscopy combined with intensive density functional theory calculations. Our systematic spectroscopic and theoretical data demonstrate the strong localization of the Fe- and Ni-ions-derived electronic states that leads to the description of the spectroscopic data as belonging simultaneously to Mott-Hubbard and charge-transfer insulators. These findings reveal Fe1-xNixPS3 as unique layered compounds with dual character of the insulating state, pointing to the importance of these results for the description and understanding of the functionality of this class of materials in different applications.

Optical signature for distinguishing between Mott-Hubbard, intermediate, and charge-transfer insulators

Determining the nature of band gaps in transition-metal compounds remains challenging. We present a first-principles study on electronic and optical properties of CoO using hybrid functional pseudopotentials. We show that optical absorption spectrum can provide a clear fingerprint to distinguish between Mott-Hubbard, intermediate, and charge-transfer insulators. This discrimination is reflected by the qualitative difference in peak satellites due to unique interplay between $d\text{\ensuremath{-}}d$ and $p\text{\ensuremath{-}}d$ excitations, thus allowing identification from experimental data alone, unlike the existing methods that require additional theoretical interpretation. We conclude that the CoO is an intermediate rather than a Mott-Hubbard insulator as is initially believed.

Simplified approach to the magnetic blue shift of Mott gaps

The antiferromagnetic ordering in Mott insulators upon lowering the temperature is accompanied by a transfer of the single-particle spectral weight to lower energies and a shift of the Mott gap to higher energies (magnetic blue shift, MBS). The MBS is governed by the double exchange and the exchange mechanisms. Both mechanisms enhance the MBS upon increasing the number of orbitals. By performing a polynomial fit to numerical dynamical mean-field theory data we provide an expansion for the MBS in terms of hopping and exchange coupling of a prototype Hubbard-Kondo-Heisenberg model and discuss how the results can be generalized for application to realistic Mott or charge-transfer insulator materials. This allows estimating the MBS of the charge gap in real materials in an extremely simple way avoiding extensive theoretical calculations. The approach is exemplarily applied to $\alpha$-MnTe, NiO, and BiFeO$_3$ and an MBS of about $130$ meV, $360$ meV, and $157$ meV is found, respectively. The values are compared with the previous theoretical calculations and the available experimental data. Our ready-to-use formula for the MBS simplifies the future studies searching for materials with a strong coupling between the antiferromagnetic ordering and the charge excitations, which is paramount to realize a coupled spin-charge coherent dynamics at a femtosecond time scale.

Fabrication of Highly Resistive NiO Thin Films for Nanoelectronic Applications

AbstractThin films of the prototypical charge transfer insulator nickel oxide appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging, however, and mostly a p‐type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the properties of thin films deposited using sputtering. A cluster analysis is performed, and four main types of films are found. Among them, the desired insulating phase is identified. From this material, nanoscale devices are fabricated, which demonstrate that the results carry over to relevant length scales. Initial switching results are reported.