Characteristics Of Films Research Articles

Temperature dependence mechanism of high-temperature oxidation of transition metal silicide MoSi2

Transition metal silicides represented by MoSi2 have excellent oxidation resistance and are widely used as high-temperature anti-oxidation coatings in hot end components of power equipment. However, the mechanism of temperature-dependent growth of MoSi2 oxidation products has not been revealed. Therefore, this study investigated the formation characteristics of oxide film and silicide-poor compound on MoSi2 at temperatures of 1000 °C–1550 °C through high-temperature oxidation experiments, combined with microscopic Raman spectroscopy, scanning electron microscope, and x-ray diffraction (XRD) characterizations. The result showed that MoSi2 underwent high-temperature selective oxidation reactions at 1000 °C–1200 °C, forming MoO2 and SiO2 oxide film on the substrate. As the oxidation temperature increased to 1550 °C, after 100 h of oxidation, along with the disappearance of MoO2 and the phase transformation of SiO2, a continuous Mo5Si3 layer with a thickness of approximately 47 μm was formed at the SiO2–MoSi2 interface. Thermodynamics and kinetic calculations further revealed the mechanism of temperature-dependent growth of oxidation products (MoO2 and Mo5Si3) during high-temperature oxidation process of MoSi2. As the temperature increased, the diffusion flux ratio of O and Si decreased, leading to a decrease in oxygen concentration at the interface and promoting the growth of the Mo5Si3 layer. Its thickness is an important indicator for evaluating the oxidation resistance of MoSi2 coatings during service. This study provides experimental and mechanistic insights into the temperature-dependent growth behavior of Mo5Si3 during the high-temperature oxidation of MoSi2 coating, and provides guidance for predicting the service life and improving the oxidation resistance of silicide coatings.

Analysis of Innovative Methods of Interactive Film and Television Art in Traditional Story Narration

This article aims to explore how interactive film and television art can influence traditional storytelling through innovative methods. By analyzing the characteristics of interactive film and television art, comparing it with traditional narrative, and specific innovative practice cases, this article reveals the potential of interactive film and television art in enhancing audience participation, expanding narrative structure, and enhancing emotional resonance.

Domain Switching Characteristics in Ga-Doped HfO2 Ferroelectric Thin Films with Low Coercive Field.

The gallium-doped hafnium oxide (Ga-HfO2) films with different Ga doping concentrations were prepared by adjusting the HfO2/Ga2O3 atomic layer deposition cycle ratio for high-speed and low-voltage operation in HfO2-based ferroelectric memory. The Ga-HfO2 ferroelectric films reveal a finely modulated coercive field (Ec) from 1.1 (HfO2/Ga2O3 = 32:1) to an exceptionally low 0.6 MV/cm (HfO2/Ga2O3 = 11:1). This modulation arises from the competition between domain nucleation and propagation speed during polarization switching, influenced by the intrinsic domain density and phase dispersion in the film with specific Ga doping concentrations. Higher Ec samples exhibit a nucleation-dominant switching mechanism, while lower Ec samples undergo a transition from a nucleation-dominant to a propagation-dominant reversal mechanism as the electric field increases. This work introduces Ga as a viable dopant for low Ec and offers insights into material design strategies for HfO2-based ferroelectric memory applications.

New polymeric nanocomposite thin films for transparent optoelectronics: Impact of In(acac)3 on the structural, optical and photoelectrical characteristics of PVA films

Concerning the rapid progress in elastic and transparent optoelectronics, the need for cost-effective materials for transparent optoelectronic devices has become a mainstream research trend. Therefore, this report aimed to explore the modifications of the PVA characteristics due to In(acac)3 doping. New PVA:In(acac)3 nanocomposite thin films were fabricated using a cost-effective and facile spin-coating technique with varying the In(acac)3 loading concentration. The structural and molecular feature variations of PVA have been tracked using XRD and FTIR techniques, respectively. Furthermore, by varying In(acac)3′s concentration, the fabricated films' linear/nonlinear optical properties have been investigated symmetrically using the UV–visible-NIR spectrophotometric technique. The measured transmittance spectra of the prepared films showed the tunability of the energetic position of the fundamental edge while conserving the high transparency. The energy gap and Urbach energy of the prepared thin films have been calculated as a function of doping concentration. The nonlinear refractive index and optical susceptibilities were estimated for all the fabricated films. On the other hand, the photodetection response of the fabricated Schottky barrier devices was tested. The fabricated devices showed pronounced UV response, where the photocurrent density was significantly enhanced under UV illumination up to 0.1 mA/cm2 for the 20 wt.% In(acac)3 doped films. The photodetection performance of the manufactured nanocomposite thin films under repeatable On/Off switching cycles was tested. The optimum doping concertation of In(acac)3 was determined in terms of the analyzed optical and photodetection characteristics to be 20 wt.%. The obtained results support the careful reconsideration of the possibility of exploiting some cheap polymers as important components in advanced optoelectronic applications.

Properties and Characteristics of Fish Skin Gelatin-Based Three-Layer Film Developed with Bioplastics and Physalis Leaf Extract

Properties and Characteristics of Fish Skin Gelatin-Based Three-Layer Film Developed with Bioplastics and Physalis Leaf Extract

Enhancing the dielectric characteristics of argon beam irradiated polymer composite films

In this study, the casting prepration technique is applied to produce flexible CA/PANI composite films. The CA/PANI samples which are composed of polyaniline (PANI) and cellulose acetate (CA) are directed to applied in electrical storage devices. The XRD, FTIR, TEM, Ramman and SEM techniques were employed for analyzing the produced films. The TEM show the PANI were formed with the particle size less than 100 nm. Next, argon-ion beam with varying fluencies (4x1014, 8x1014 and 12x1014 ions/cm2) bombard the CA/PANI samples. In frequency of 20 Hz to 5.5 MHz, the dielectric properties of CA/PANI were significantly altered by argon beam treatment. The irradiated sample by 12x1014 ions/cm−2 at frequency 50 Hz resulted in an improvement in the dielectric constant ε′ from 36.4 for the unirradiated CA/PANI to 108.6. Additionally, the relaxation time decreased from 1.63x10−4 sec to 2.08x10−5 sec. The results of this work open the ways for using the irradiated CA/PANI in a number of devices, such as supercapacitors and batteries.

Evidence for reversible oxygen ion movement during electrical pulsing: enabler of emerging ferroelectricity in binary oxides

Ferroelectric HfO2-based materials and devices show promising potential for applications in information technology but face challenges with inadequate electrostatic control, degraded reliability, and serious variation in effective oxide thickness scaling. We demonstrate a novel interface-type switching strategy to realize ferroelectric characteristics in atomic-scale amorphous binary oxide films, which are formed in oxygen-deficient conditions by atomic layer deposition at low temperatures. This approach can avoid the shortcomings of reliability degradation and gate leakage increment in scaling polycrystalline doped HfO2-based films. Using theoretical modeling and experimental characterization, we show the following. (1) Emerging ferroelectricity exists in ultrathin oxide systems as a result of microscopic ion migration during the switching process. (2) These ferroelectric binary oxide films are governed by an interface-limited switching mechanism, which can be attributed to oxygen vacancy migration and surface defects related to electron (de)trapping. (3) Transistors featuring ultrathin amorphous dielectrics, used for non-volatile memory applications with an operating voltage reduced to ±1 V, have also been experimentally demonstrated. These findings suggest that this strategy is a promising approach to realizing next-generation complementary metal-oxide semiconductors with scalable ferroelectric materials.

Optical, Electrical, Structural, and Thermo-Mechanical Properties of Undoped and Tungsten-Doped Vanadium Dioxide Thin Films.

The undoped and tungsten (W)-doped vanadium dioxide (VO2) thin films were prepared by electron beam evaporation associated with ion-beam-assisted deposition (IAD). The influence of different W-doped contents (3-5%) on the electrical, optical, structural, and thermo-mechanical properties of VO2 thin films was investigated experimentally. Spectral transmittance results showed that with the increase in W-doped contents, the transmittance in the visible light range (400-750 nm) decreases from 60.2% to 53.9%, and the transmittance in the infrared wavelength range (2.5 μm to 5.5 μm) drops from 55.8% to 15.4%. As the W-doped content increases, the residual stress in the VO2 thin film decreases from -0.276 GPa to -0.238 GPa, but the surface roughness increases. For temperature-dependent spectroscopic measurements, heating the VO2 thin films from 30 °C to 100 °C showed the most significant change in transmittance for the 5% W-doped VO2 thin film. When the heating temperature exceeds 55 °C, the optical transmittance drops significantly, and the visible light transmittance drops by about 11%. Finally, X-ray diffraction (XRD) and scanning electron microscope (SEM) were used to evaluate the microstructure characteristics of VO2 thin films.

Enhancing Structural Integrity, Optical Properties, and Room Temperature Formaldehyde Sensing Through Optimized Spray Deposition Rates

This study explores the impact of deposition rate on the properties of TiO2 thin films produced via spray pyrolysis, focusing on their application in gas sensors. The analysis covers structural, morphological, optical, and gas sensing characteristics of TiO2 films deposited at rates between 1 and 2.5 ml min−1. Studies show optimizing TiO2 film deposition rates at 2 ml min−1 significantly enhances formaldehyde detection, improving selectivity and achieving a rapid response of 7.52 at 20 ppm concentration. This study underscores the pivotal role of deposition rate optimization in augmenting the gas-sensing efficacy of TiO2 films, particularly for formaldehyde detection at ambient conditions. Optimal deposition rates are instrumental in enhancing sensor performance. The synergistic application of XRD and Raman spectroscopy unequivocally confirmed the presence of the TiO2 anatase phase, which is of paramount significance in gas sensing applications. FESEM furnished high-resolution insights into the surface morphology, revealing a spherical architecture. Furthermore, UV–vis spectroscopy was employed to assess the optical band gap of the films, which exhibited a decrement correlating with the rate of deposition. Notably, a deposition rate of 2 ml min−1 markedly improved the TiO2 films’ sensing performance. These insights are critical for developing cost-effective, high-performance gas sensors for cutting-edge applications.

Photoactivated ultralong room‐temperature phosphorescence from epoxy polymer films doped with carbazole derivatives for erasable light printing

AbstractThe development of polymer‐based luminescent materials with efficient and switchable ultralong organic phosphorescence (UOP) under ambient conditions is of great importance but remains challenging. In this work, three new organic luminogens have been developed by attaching the ethyl benzoate to the nitrogen atoms of carbazole, 7H‐benzo[c]carbazole, and 7H‐dibenzo[c,g]carbazole via the Buchwald‐Hartwig coupling reaction, respectively. Subsequently, they are embedded into epoxy polymers through doping into the mixtures of bisphenol A diglycidyl ether and 1,3‐propylenediamine, followed by a thermal curing reaction. It is found that the resulting polymer films EB‐BCz@EP and EB‐2BCz@EP show unique photoactivated UOP properties. After UV light irradiation, their phosphorescence quantum yields are up to 7.6%, and the lifetimes reach 1.84 and 1.18 s, respectively. These observations suggest that it is possible to elevate the UOP lifetime without reducing the phosphorescence quantum yield by tuning the molecular structure of the guest luminogen. Upon thermal annealing, the photoactivated polymer films can recover to the pristine state, demonstrating switchable UOP characteristics of the polymer films in the air. Inspired by these exciting results, the EB‐2BCz@EP has been successfully explored as a transparent polymer film for erasable light printing.

CMP characteristics of IGZO thin film with a variety of process parameters

Abstract Recently, amorphous indium gallium zinc oxide (a-IGZO) is studied in the field of 3D transistor as a channel material for the high mobility, good uniformity and low leakage current performance. CMP process need be applied to fully remove surface IGZO in multilayer film stack structure and achieve the purpose of planarization. As we all know, the CMP characteristics of desired removal rate with stability and within-wafer non-uniformity (WIWNU%) play an important role in CMP process. In this paper, the variation of the removal rate and the non-uniformity for IGZO thin film were studied with various process parameters (such as polishing time, slurry flow rate, slurry dilution, head pressure, head and table speed).The results mean that the removal rate and the non-uniformity of IGZO thin film can be tuned by changing process parameters, which can enhance the confidence about the feasibility of IGZO-CMP in the application of advanced technology.

Effect of Picosecond Laser Irradiation on the Properties of Nanostructured Zinc Oxide Thin Films

In this article, a picosecond laser source was employed to irradiate the nanostructured ZnO thin film prepared by the sol-gel method. The impact of laser irradiation on the characteristics of a nanostructured ZnO thin film was investigated. Analysis using X-ray diffraction, scanning electron microscopy, and Fourier transform infrared spectroscopy confirmed a significant influence on the structure of the ZnO thin film. As the duration of laser irradiation (the number of laser pulses) increased, there was a remarkable decrease in both the electronic and photoluminescence intensities of the nanostructured film. Tauc's plot indicates a noticeable change in the optical band gaps of the thin film with the increase in irradiation time. The morphological image suggests that the laser irradiation energy induces both degradation and modification of the film surface, consequently causing changes in the structural, absorption, and photoluminescence properties of nanostructured ZnO. The observed effects are attributed to alterations in the crystal structure and size of the nanostructured ZnO film, as confirmed by XRD. The reduction in photoluminescence intensity observed over the laser irradiation times may be a result of potential degradation in the crystalline structure of the nanostructured ZnO film.

Dopant-induced Morphology of Organic Semiconductors Resulting in High Doping Performance.

Doping plays a crucial role in modulating and enhancing the performance of organic semiconductor (OSC) devices. In this study, the critical role of dopants is underscored in shaping the morphology and structure of OSC films, which in turn profoundly influences their properties. Two dopants, trityl tetrakis(pentafluorophenyl) (TrTPFB) and N,N-dimethylanilinium tetrakis(pentafluorophenyl)borate (DMA-TPFB), are examined for their doping effects on poly(3-hexylthiophene) (P3HT) and PBBT-2T host OSCs. It is found that although TrTPFB exhibits higher doping efficiency, OSCs doped with DMA-TPFB achieve comparable or even enhanced electrical conductivity. Indeed, the electrical conductivity of DMA-TPFB-doped P3HT reaches over 67 S cm-1, which is a record-high value for mixed-solution-doped P3HT. This can be attributed to DMA-TPFB inducing a higher degree of crystallinity and reduced structural disorder. Moreover, the beneficial impact of DMA-TPFB on the OSC films' morphology and structure results in superior thermoelectric performance in the doped OSCs. These findings highlight the significance of dopant-induced morphological and structural considerations in enhancing the film characteristics of OSCs, opening up a new avenue for optimization of dopant performance.

Optical characterization of high-quality spin-Coated PVA nanostructured films for photo-sensing application

In our investigation, we fabricated high-quality Polyvinyl Alcohol (PVA) films via spin coating on a variety of substrates, with a focus on their potential applications in diverse devices. Through comprehensive characterization techniques, including spectrophotometer measurements, we evaluated the nanostructure and quality of these films. Our analysis revealed a distinct energy gap of 1.74 eV and a significant 5.37 eV direct allowed optical transition, shedding light on the correlation between absorption coefficient and photon energy. Additionally, we meticulously calculated dispersion parameters using the Wemple-DiDomenico relation, obtaining values of 19.1 eV for dispersion energy and 9.48 eV for oscillator energy under the single oscillator model. These results provide further validation of the unique structural characteristics of PVA films. Importantly, our findings underscore the potential of these materials for advanced optoelectronic devices, particularly in the realm of photosensor applications.

Insights into the Physical Characteristics of Spin Coating Films of Organometallic Materials Based on Phthalocyanine with Nickel, Copper, Manganese and Silicon

Insights into the Physical Characteristics of Spin Coating Films of Organometallic Materials Based on Phthalocyanine with Nickel, Copper, Manganese and Silicon

The Influence of Variations in Synthesis Conditions on the Phase Composition, Strength and Shielding Characteristics of CuBi2O4 Films

The Influence of Variations in Synthesis Conditions on the Phase Composition, Strength and Shielding Characteristics of CuBi2O4 Films

Hardness Distribution and Growth Behavior of Micro-Arc Oxide Ceramic Film with Positive and Negative Pulse Coordination.

Micro-arc oxidation (MAO) is a promising technology for enhancing the wear resistance of engine cylinders by growing a high hardness alumina ceramic film on the surface of light aluminum engine cylinders. However, the positive and negative pulse coordination, voltage characteristic signal, hardness distribution characteristics of the ceramic film, and their internal mechanism during the growth process are still unclear. This paper investigates the synergistic effect mechanism of cathodic and anodic current on the growth behaviour of alumina, dynamic voltage signal, and hardness distribution of micro-arc oxidation film. Ceramic film samples were fabricated under various conditions, including current densities of 10, 12, 14, and 16 A/dm2, and current density ratios of cathode and anode of 1.1, 1.2, and 1.3, respectively. Based on the observed characteristics of the process voltage curve and the spark signal changes, the growth of the ceramic film can be divided into five stages. The influence of positive and negative current density parameters on the segmented growth process of the ceramic film is mainly reflected in the transition time, voltage variation rate, and the voltage value of different growth stages. Enhancing the cathode pulse effect or increasing the current density level can effectively shorten the transition time and accelerate the voltage drop rate. The microhardness of the ceramic film cross-section presents a discontinuous soft-hard-soft regional distribution. Multiple thermal cycles lead to a gradient differentiation of the Al2O3 crystal phase transition ratio along the thickness direction of the layer. The layer grown on the outer surface of the initial substrate exhibits the highest hardness, with a small gradient change in hardness, forming a high hardness zone approximately 20-30 μm wide. This high hardness zone extends to both sides, with hardness decreasing rapidly.

Properties of spray pyrolysis deposited Zr-doped ZnO thin films and their UV sensing properties

This study investigated the characteristics of Zr-doped ZnO thin films with varying Zr doping concentrations. X-ray diffraction (XRD) analysis confirmed the presence of the ZnO hexagonal phase without any additional phases detected. The crystallite size was determined using Scherrer’s equation and Halder-Wagner equation, revealing distinct trends as the Zr content increased. The impact of Zr doping concentration on structural properties such as lattice parameters was also explored. Field emission scanning electron microscopy (FE-SEM) images indicated agglomeration, with a peak value observed at Zr-5 wt% of 175 nm that decreased at higher Zr contents. Optical properties exhibited minor variations with increasing Zr content, with the maximum band gap recorded at 3.28 eV for Zr-7 wt% and Zr-10 wt% films. Utilizing the Spitzer-Fan model, the high-frequency dielectric constant peaked at 14.26 for Zr-7 wt% films. Optical mobility displayed fluctuations with rising Zr content. Direct current (DC) conductivity results unveiled two donor levels in the deposited films, showcasing minimum activation energies of 0.23 and 0.165 eV for high and low-temperature ranges in the Zr-3 wt% film. Furthermore, the response to UV light illumination at a wavelength of 365 nm was examined, revealing notable changes in rise and decay times with varying Zr content.

Improved Ability to Resist Corrosion of Selective-Laser-Melted Stainless Steel Based on Microstructure and Passivation Film Characteristics

The local corrosion resistance of forging and selective laser melting (SLM) 304 steels was explored by intergranular corrosion analysis, double-loop electrochemical potentiodynamic reactivation, dynamic polarization experimentation, structural analysis, and passivation film characteristics analysis. The ability to resist sensitization of SLM 304 steel is greater than that of forging 304 steel at a temperature of 650 °C for 9 h. Moreover, the pit corrosion resistance of forging and SLM 304 steels is weakened by sensitization, while the pit corrosion resistance of SLM 304 steel is much greater than that of forging steel. Therefore, SLM technology can improve the ability to resist sensitization and pit corrosion of 304 steel. Analysis showed that the ability to resist corrosion of the passivation film of SLM 304 steel is greater than that of forging steel. In addition, corrosion pits are easier to generate at the interface of forging steel and SLM 304 steel. The grain boundary corrosion of SLM 304 steel intensified while the corrosion of the melt pool boundaries weakened after the sensitization treatment, resulting in a decrease in pit corrosion resistance. The coupling effect of these different structures and passivation films decides the pit and sensitization resistance of forging and SLM 304 steels. Clarifying the corrosion mechanism of forging and SLM steels is of great significance for scientific research and the widespread use of SLM technology.

Exploring the effect of corn starch/pea protein blending on the physicochemical and structural properties of biopolymer films and their aging resistance

This study investigated the potential effect of blending corn starch and pea protein isolate in various ratios (100:0, 70:30, 50:50, 30:70, and 0:100) on the aging properties of biodegradable films. Unlike previous research, the focus was on the often-overlooked aspect of film aging. Fourier-transform infrared spectroscopy and X-ray diffraction demonstrated the physical blending of corn starch and pea protein, along with chemical bonding and conformational changes. The optical and microstructural properties showed the formation of smooth, homogeneous films with good compatibility between the polymers. The water resistance, barrier, and mechanical properties corresponding to the intrinsic nature of protein polymers showed a minimized fluctuations in film properties as film ages, with a reduction of at least twice when protein is added. Remarkably, the blend with a ratio of 30:70 demonstrated the most stable properties during aging. These results demonstrated that blending the pea protein isolate was favorable for delaying the retrogradation and recrystallization of corn starch films. Understanding how these blends influence the aging characteristics of films is not only a novel contribution to the scientific community but also holds practical significance, potentially opening a potential for applications in various industries.