Characteristics Of Bipolar Junction Transistor Research Articles

Investigation of Temperature Effects on the Characteristics of Bipolar Junction Transistor

Temperature rise on the electronic board can have a noticeable impact on the electronic circuit which result in some changes in the basic parameters of the circuit elements. The aim of this paper is to study and analyzes the effects of high temperature on the static and dynamic characteristics of a bipolar transistor. The research was carried out experimentally by studying and analyzing several parameters of the NPN BJT transistor type 2SC2120 at different temperatures. The obtained results showed that there is a significant increase in collector current from 0.19 A to 0.23 A and current gain from 0.14 to 0.22 by increasing the temperature from 25°C to 130°C. As for the threshold voltage, it was found that its value decreased from 0.6 volts to 0.4 volts. The results obtained also indicate that for the dynamic properties, the diffusion capacitance of the emitter-base junction, increased from 10.1 nF to 45.02 nF by increasing the temperature up to 130°C. Finally, it was found that the reverse capacitance of the gate-drain junction increased from 41.4 pF to 47.3 pF under the same temperature ranges.

A Comparative Study Between X-rays and Gamma-Rays Irradiation on Electrical Characteristics of Bipolar Junction Transistors (BJTs)

Irradiation impact of gamma rays and X-rays on bipolar junction transistors (BJTs) in terms of electronic excitation due to transfer of energy and subsequent ionization, as well as energy transfer to atomic nuclei is studied using in-situ method. Comparison is made on the electrical characteristics of the devices under test (DUT) for various collecting current at two different operating mode. Both temporary and permanent damages in DUTs are found to be induced by energy transfer from the irradiation by gamma-rays and X-rays, depending upon total dose absorbed and current drive. Increased probability of recombination, due to creation of electron–hole pairs at the base region is found to be the most significant radiation damage in BJTs, as it leads to decrease in electron flux reaching the collector region.

Development of a Simple Analytical PSpice Model for SiC-Based BJT Power Modules

A simple analytical Spice-type model has been developed and verified for the first time for 4H-SiC-based bipolar junction transistor (BJT) power module with voltage and current rating of 1200 V and 800 A. The simulation model is based on a temperature-dependent silicon carbide (SiC) Gummel-Poon model for high-power applications. PSpice simulations are performed to extract technology-dependent modeling parameters coupled with static and dynamic characteristics of BJTs at different temperatures and validated against the measured data. Influence of various circuit elements, for instance, stray inductance and base resistance and internal device modeling parameters, carrier life time, and emitter doping, on switching losses has been studied. The performance of the SiC BJT model is fairly accurate and correlates well with the measured results over a wide temperature range.

Radiation defects studies on silicon bipolar junction transistor irradiated by Br ions and electrons

Bipolar junction transistors are sensitive to both ionization and displacement damage due to charged particles from space radiation. Passivating oxides and the SiO2/Si interface are more sensitive to ionization damage whereas displacement damage may strongly influence the bulk properties of a device. Fast electrons with energies below a few MeV introduces exclusively target ionization while heavy ions at moderate energies (lower than 2MeV/amu) results in displacement damage due to individual Frenkel-pairs generation. Although both kinds of radiation are basically independent an effective correlation was seen in the electronic characteristics of transistors. We report on the effects on current gain and current–voltage characteristics of bipolar junction transistors due to successive irradiation with 20MeV Br ions and 110keV electrons.

Development of a PSPICE Model for 1200 V/800 A SiC Bipolar Junction Transistor Power Module

The characteristics of a 1200 V and 800 A bipolar junction transistor (BJT) power module has been measured, simulated and verified for the first time in the PSPICE platform. The simulation model is based on a silicon carbide (SiC) Gummel-Poon model for high power applications. The implemented model has been extended with temperature dependent equations in order to extend the BJT operating temperature range. PSPICE simulations are performed to extract technology dependent modeling parameters coupled with static and dynamic characteristics of BJTs at different temperatures and validated against the measured data. The performance of the SiC BJT model is fairly accurate and correlates well with the measured results over a wide temperature range.

Experimental Investigation of Electro-thermal Stress Impact on SiC-BJTs Electrical Characteristics

The aim of this study consists in investigating the effects of electrical and thermal stresses on SiC n-p-n bipolar junction transistors (BJTs). The stability of the electrical characteristics of BJTs is inspected under switching operation, DC operation, temperature cycling and continuous thermal stress up to 225°C. While switching operation and temperature cycling for several hours lead to significant changes at 25°C, the electrical characteristics were little degraded at high temperature. Besides, DC operation and continuous thermal stress did not result in significant degradation at all, both at room temperature and at high temperature.

Retarding effect of surface base compensation on degradation of noise characteristics of BiCMOS BJTs

Hot carrier degradation of 1 f noise characteristics of bipolar junction transistors is found to be substantially reduced by arsenic surface compensation of the base region, in agreement with former reports on the improvement in reliability of such devices, inferred from their static characteristics studies.

Anneal technique to recover the electrical characteristics of the packaged bipolar junction transistors damaged by Co-60 radiation

Radiation-induced degradation in packaged bipolar junction transistors (BJT) can be efficiently removed by an anneal treatment carried out at 400 °C for 12 min in N2. The electrical characteristics of BJTs including current gain β, base current IB, and collector current IC were examined in the recovery of device performance. The radiation was performed by a Co-60 (γ-ray) source with the total doses ranging from 10 K rad to 10 M rad. The determinations of anneal temperature and anneal time were also discussed. It was shown that this anneal treatment did not degrade the radiation and hot-carrier hardnesses of devices.

Translinear frequency doubler

A sinusoidal frequency-doubling technique is described which exploits the translinear characteristics of bipolar junction transistor. The scheme, which uses as its basis a previously described squaring circuit, employs substantially fewer transistors than do other translinear frequency doublers. Results obtained from a practical circuit are presented and discussed.