Chalcogenide Phase-change Materials Research Articles

Reconfigurable binary diffractive optical neural network based on chalcogenide phase change material Ge2Sb2Se4Te1.

Diffractive optical neural networks (DONNs) possess unique advantages such as light-speed computing, low energy consumption, and parallel processing, which have obtained increasing attention in recent years. However, once conventional DONNs are fabricated, their function remains fixed, which greatly limits the applications of DONNs. Thus, we propose a reconfigurable DONN framework based on a repeatable and non-volatile phase change material Ge2Sb2Se4Te1(GSST). By utilizing phase modulation units made of GSST to form the network's neurons, we can flexibly switch the functions of the DONN. Meanwhile, we apply a binary training algorithm to train the DONN weights to binary values of 0 and π, which is beneficial for simplifying the design and fabrication of DONN while reducing errors during physical implementation. Furthermore, the reconfigurable binary DONN has been trained as a handwritten digit classifier and a fashion product classifier to validate the feasibility of the framework. This work provides an efficient and flexible control mechanism for reconfigurable DONNs, with potential applications in various complex tasks.

Role of microscopic coherent force and hot-carrier cooling in photoinduced phase transition for chalcogenide phase-change materials

Role of microscopic coherent force and hot-carrier cooling in photoinduced phase transition for chalcogenide phase-change materials

High-throughput screening to identify two-dimensional layered phase-change chalcogenides for embedded memory applications

Chalcogenide phase-change materials (PCMs) are showing versatile possibilities in cutting-edge applications, including non-volatile memory, neuromorphic computing, and nano-photonics. However, for embedded phase-change memory applications, conventional PCMs suffer from insufficient thermal stability because of their relatively low crystallization temperatures (Tx). Although doping with additional alloying elements could improve the amorphous stability, it also increases the tendency towards compositional partitioning and phase separation. Recently, a two-dimensional (2D) layered compound CrGeTe3 (CrGT) was developed as a PCM, showing a high Tx ~ 276 °C with an inverse change in resistive-switching character upon phase transition. Here, we report a high-throughput materials screening for 2D layered phase-change chalcogenides. We aim to clarify whether the high Tx and the inverse electrical resistance contrast are intrinsic features of 2D PCMs. In total, twenty-five 2D chalcogenides with CrGT trilayer structures have been identified from a large database. We then focused on selected layered tellurides by performing thorough ab initio simulations and experimental investigations and confirming that their amorphous phase indeed has a much higher Tx than conventional PCMs. We attribute this enhanced amorphous stability to the structurally complex nuclei required to render crystallization possible. Overall, we regard InGeTe3 as a balanced 2D PCM with both high thermal stability and large electrical contrast for embedded memory applications.

Reversible Laser Imprinting of Phase Change Photonic Structures in Integrated Waveguides.

Formation of laser-induced periodic surface structures (LIPSS) is known as a fast and robust method of functionalization of material surfaces. Of particular interest are LIPSS that manifest as periodic modulation of phase state of the material, as it implies reversibility of phase modification that constitute rewritable LIPSS, and recently was demonstrated for chalcogenide phase change materials (PCMs). Due to remarkable properties of chalcogenide PCMs─nonvolatality, prominent optical contrast and ns switching speed─such novel phase change LIPSS hold potential for exciting applications in all-optical tunable photonics. In this work we explore phase change LIPSS formation in thin films of Ge2Sb2Te5 (GST) integrated with planar and rib waveguides. We demonstrate that by fine-tuning laser radiation, the morphology of phase change LIPSS can be controlled, including their period and fill factor, and investigate the limitations of multicycle rewriting of the structures. We also demonstrate the formation of phase change LIPSS on a 1D waveguide, which has potential for use as tunable Bragg filters or structures for on-demand light decoupling into the far-field. The presented concept of applying phase change LIPSS offers a promising approach to enable fast and simple tuning in integrated photonic devices.

Deterministic quasi-continuous tuning of phase-change material integrated on a high-volume 300-mm silicon photonics platform

Programmable photonic integrated circuits (PICs) consisting of reconfigurable on-chip optical components have been creating new paradigms in various applications, such as integrated spectroscopy, multi-purpose microwave photonics, and optical information processing. Among many reconfiguration mechanisms, non-volatile chalcogenide phase-change materials (PCMs) exhibit a promising approach to the future very-large-scale programmable PICs, thanks to their zero static power and large optical index modulation, leading to extremely low energy consumption and ultra-compact footprints. However, the scalability of the current PCM-based programmable PICs is still limited since they are not directly off-the-shelf in commercial photonic foundries now. Here, we demonstrate a scalable platform harnessing the mature and reliable 300 mm silicon photonic fab, assisted by an in-house wide-bandgap PCM (Sb2S3) integration process. We show various non-volatile programmable devices, including micro-ring resonators, Mach-Zehnder interferometers and asymmetric directional couplers, with low loss (~0.0044 dB/µm), large phase shift (~0.012 π/µm) and high endurance (>5000 switching events with little performance degradation). Moreover, we showcase this platform’s capability of handling relatively complex structures such as multiple PIN diode heaters in devices, each independently controlling an Sb2S3 segment. By reliably setting the Sb2S3 segments to fully amorphous or crystalline state, we achieved deterministic multilevel operation. An asymmetric directional coupler with two unequal-length Sb2S3 segments showed the capability of four-level switching, beyond cross-and-bar binary states. We further showed unbalanced Mach-Zehnder interferometers with equal-length and unequal-length Sb2S3 segments, exhibiting reversible switching and a maximum of 5 (N+1,N=4\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$N+1,N=4$$\\end{document}) and 8 (2N,N=3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${2}^{N},N=3$$\\end{document}) equally spaced operation levels, respectively. This work lays the foundation for future programmable very-large-scale PICs with deterministic programmability.

Monolithic back-end-of-line integration of phase change materials into foundry-manufactured silicon photonics

Monolithic integration of novel materials without modifying the existing photonic component library is crucial to advancing heterogeneous silicon photonic integrated circuits. Here we show the introduction of a silicon nitride etch stop layer at select areas, coupled with low-loss oxide trench, enabling incorporation of functional materials without compromising foundry-verified device reliability. As an illustration, two distinct chalcogenide phase change materials (PCMs) with remarkable nonvolatile modulation capabilities, namely Sb2Se3 and Ge2Sb2Se4Te1, were monolithic back-end-of-line integrated, offering compact phase and intensity tuning units with zero-static power consumption. By employing these building blocks, the phase error of a push-pull Mach–Zehnder interferometer optical switch could be reduced with a 48% peak power consumption reduction. Mirco-ring filters with >5-bit wavelength selective intensity modulation and waveguide-based >7-bit intensity-modulation broadband attenuators could also be achieved. This foundry-compatible platform could open up the possibility of integrating other excellent optoelectronic materials into future silicon photonic process design kits.

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer.

The global demand for radio frequency (RF) modules and components has grown exponentially in recent decades. RF switches are the essential unit in RF front-end and reconfigurable systems leading to the rapid development of novel and advanced switch technology. Germanium telluride (GeTe), as one of the Chalcogenide phase-change materials, has been applied as an RF switch due to its low insertion loss, high isolation, fast switching speed, and low power consumption in recent years. In this review, an in-depth exploration of GeTe film characterization is presented, followed by a comparison of the device structure of directly heated and indirectly heated RF phase-change switches (RFPCSs). Focusing on the prototypical structure of indirectly heated RFPCSs as the reference, the intrinsic properties of each material layer and the rationale behind the material selection is analyzed. Furthermore, the design size of each material layer of the device and its subsequent RF performance are summarized. Finally, we cast our gaze toward the promising future prospects of RFPCS technology.

Optical nanoimaging of laser-switched phase-change plasmonic infrared antennas.

We investigate the plasmonic properties of laser-printed chalcogenide phase-change material In3SeTb2 (IST) antennas through near-field nanoimaging. Antennas of varying lengths were fabricated by laser switching an amorphous IST film into its crystalline metallic state. Near-field imaging elucidates the pronounced field confinement and enhancement at the antenna extremities along with the emergence of different ordered plasmonic modes with increasing length. Compared to gold antennas, the PCM antennas exhibit slightly lower but still substantial near-field enhancement with greater compactness. The interplay between antenna length, illumination angle, and excitation frequency enables versatile control over the resonant near-field distribution. Our work provides deeper understanding and tunable functionalities of laser-printed PCM nanoantennas for potential applications in compact, dynamically reconfigurable nanophotonic devices.

Chalcogenide phase-change material advances programmable terahertz metamaterials: a non-volatile perspective for reconfigurable intelligent surfaces.

Terahertz (THz) waves have gained considerable attention in the rising 6G communication due to their large bandwidth. However, the cost and power consumption become the major constraints for the commercialization of 6G THz systems as the frequency increases. Reconfigurable intelligent surface (RIS) comprising active metasurfaces and digital controllers has been proposed for beamforming in the 6G multiple-input-multiple-output systems, showing good potential to suppress the system size, weight, and power consumption (SWaP). Currently, their controlling diodes can hardly work up to THz frequencies. Therefore, several active stimuli have been investigated as alternatives. Among them, chalcogenide phase-change material Ge2Sb2Te5 (GST) addresses large modulation depth, picosecond switching speed, and non-volatile properties. Notably, the non-volatile GST may enable RIS systems with memory and low control power. This work briefly reviews the advances of GST-tuned THz metamaterials (MTMs), discusses the current obstacles to overcome, and gives a perspective of GST applications in the rising 6G communications.

Phase change material-based tunable Fano resonant optical coatings and their applications.

Thin-film coatings offer a scalable optical platform, as compared to nanopatterned films, for various applications including structural coloring, photovoltaics, and sensing. Recently, Fano resonant optical coatings (FROCs) have gained attention. FROCs consist of coupled thin film nanocavities composed of a broadband and a narrowband optical absorber. The optical properties of FROCs can be dynamically adjusted using chalcogenide phase change materials (PCM). Switching the structural states of PCM layers in the cavity between amorphous and crystalline states, the Fano resonance supported by FROC can be modulated in terms of resonance wavelength, intensity, and bandwidth. This review discusses the scientific and technological facets of both passive and active FROCs for applications in structural coloring and spectrum-splitting filters. We explore electrically tunable FROCs for dynamic color generation and optical steganography. Furthermore, we discuss the utilization of passive and active FROCs as spectrum-splitting filters to mitigate the drop in photovoltaic efficiency of solar cells due to heating and for hybrid thermal-electric power generation.

Optimization of electrical properties and radio frequency applications of GeTe thin film

GeTe belongs to a chalcogenide phase change material, which can dynamically achieve reversible switching between the crystalline state of low resistivity and the amorphous state of high resistivity by utilizing the thermally induced phase change characteristics. The GeTe is an important functional material in the fields of memristors and nonvolatile radio frequency (RF) switches. For RF switch applications, this paper focuses on optimizing the electrical performance of GeTe thin films prepared by magnetron sputtering. By comprehensively analyzing the effects of substrate materials, sputtering conditions, and annealing conditions on the resistivity of crystalline GeTe films, effective conditions for preparing low resistivity GeTe films are explored. Fig. (a) shows that compared with the GeTe film on a SiO<sub>2</sub> substrate, the film on an Al<sub>2</sub>O<sub>3</sub> substrate can obtain higher crystallinity and lower resistivity. For the deposition power and pressure shown in Fig. (b), the combination of medium power (50–80 W) and low pressure (2–3 mTorr) is beneficial for low crystalline resistivity of GeTe film. Additionally, Fig. (c) shows that higher annealing temperature (350–400 ℃) can realize lower film resistivity. Finally, the experimental results show that the lowest crystalline resistivity of the prepared GeTe thin film reaches 3.6×10<sup>–6</sup> Ω·m, and the resistance ratio is more than 10<sup>6</sup>. Based on rectangular chips of GeTe film, a parallel millimeter-wave switch with zero static power is also constructed. As shown in Fig. (d), the insertion loss is less than 2.4 dB, and the isolation is greater than 19 dB in a 1–40 GHz frequency band, demonstrating the potential application of GeTe thin films in the field of broadband high-performance discrete nonvolatile RF switches.

Understanding the link between fragile-to-strong kinetics and β-relaxation in chalcogenide glasses

β-relaxation has been a universal behavior in various glasses with bond kinds of covalent and metallic, as well as the metavalent, which is the typical bonding of chalcogenide phase-change materials (PCMs). Recently, the fragile-to-strong (F–S) transition kinetics has been a significant feature in supercooled liquids of PCMs, to alleviate the contradiction between good thermal stability nearby glass transition temperature and fast crystallization speed around melting temperature. By analyzing the results from the measurements of powder mechanical spectroscopy and flash differential scanning calorimetry, in this work, we revealed the link between β-relaxation and F–S crystallization kinetics in GeTe-GeSe chalcogenide glass system. It was found a positive correlation between β-relaxation and F–S transition, which is accompanied by the results of resistance drift, crystallization temperature, as well as the maximum crystal growth rate. However, the GeTe component, which has large β-relaxation behavior but no F–S transition, does not obey the positive correlation because of the large activation energy of α-relaxation. These findings are expected to build a foundation and illustrate the microscopic mechanism between F–S crystallization kinetics and β-relaxation behavior in chalcogenide glasses.

Optical switching beyond a million cycles of low-loss phase change material Sb2Se3

The development of the next generation of optical phase change technologies for integrated photonic and free-space platforms relies on the availability of materials that can be switched repeatedly over large volumes and with low optical losses. In recent years, the antimony-based chalcogenide phase-change material Sb2Se3 has been identified as particularly promising for a number of applications owing to good optical transparency in the near-infrared part of the spectrum and a high refractive index close to silicon. The crystallization temperature of Sb2Se3 of around 460 K allows switching to be achieved at moderate energies using optical or electrical control signals while providing sufficient data retention time for non-volatile storage. Here, we investigate the parameter space for optical switching of films of Sb2Se3 for a range of film thicknesses relevant to optical applications. By identifying optimal switching conditions, we demonstrate endurance of up to 107 cycles at reversible switching rates of 20 kHz. Our work demonstrates that the combination of intrinsic film parameters with pumping conditions is particularly critical for achieving high endurance in optical phase change applications.

An Open‐Source Multifunctional Testing Platform for Optical Phase Change Materials

Owing to their unique tunable optical properties, chalcogenide phase change materials are increasingly being investigated for optics and photonics applications. However, in situ characterization of their phase transition characteristics is a capability that remains inaccessible to many researchers. Herein, a multifunctional silicon microheater platform capable of in situ measurement of structural, kinetic, optical, and thermal properties of these materials is introduced. The platform can be fabricated leveraging industry‐standard silicon foundry manufacturing processes. This platform is fully open‐sourced, including complete hardware design and associated software codes.

Tunable optical power splitter based on directional coupler structure with phase change material Sb2Se3

Traditional optical power splitters (OPSs) have fixed power split ratios, and although some can be tuned with an electro-optic polymer, continuous energy supply increases power consumption. Combining OPS with chalcogenide phase-change materials (PCMs) allows us to tune the power split ratio with a low power owing to the nonvolatility and contrasting optical properties of the PCM. In this paper, a compact 1 × 2 arbitrary ratio OPS with hybrid directional coupler structure with PCM Sb2Se3 is proposed for lower-power and reconfigurable PICs. It demonstrates a continuous change in the power split ratios by changing the crystalline fraction of the Sb2Se3 material covered on coupling waveguide. The non-volatile states of Sb2Se3 enables zero static power of the device. The splitting ratio can be tuned in a broad range from 1 % to 97 % with the excess loss of 0.11 dB at 1550 nm. Such device can be extended to perform a handwritten digit recognition task with the simulated properties to determine the performance of the OPS device in the neuromorphic network. Its recognition accuracy achieves as high as 95 % for the MNIST (Modified National Institute of Standard and Technology) handwritten digits, which is close to that of device with ideal characteristics based on the software computing. The results indicate that the proposed OPS can not only achieve large range tunable power allocation, but also be further applied to large-scale PICs and optical neuromorphic networks.

High optical contrast and multi-level storage of the ultracompact plasmonic device based on phase change materials

The combination of photonic devices and chalcogenide phase change materials (PCMs) provides a potential solution for photonic storage and computing. However, there are still some issues that need to be addressed for currently integrated phase-change photonic memory such as low speed, high energy consumption, and large footprint. To enable stronger interaction between light and PCMs, we utilize the plasmonic enhancement effect to amplify the local electric field, resulting in high energy efficiency in photonic storage and computation. This work proposes a nanoscale elliptical plasmonic nanoantenna that dramatically improves switching speed and energy by placing an Ag elliptical ring wrapped with Ge2Sb2Te5 (GST) on a silicon waveguide. The device exhibits crystalline and amorphous states with insertion losses of 0.3 dB and 1.7 dB, respectively, at a wavelength of 1550 nm. Write and erase operations can be completed by optical pulses of 1.5 ns–1 mW and 3 ns–3 mW, respectively. An ultra-small device volume of only 4.465 × 10−4 (µm3) is capable of achieving a switching contrast ratio of 28.5 %. Moreover, the non-volatile storage of multi-level intermediate states facilitates a wide weight-variation range and allows for precise weight updates, enhancing the overall performance and accuracy of the system. In the handwritten digit recognition task of the three-layer perceptron, the device demonstrates a recognition accuracy rate of 95 %, indicating that our approach can enable a more efficient neuromorphic photonic computing network.

Flexible germanium monotelluride phase change films with ultra-high bending stability for wearable piezoresistive sensors

Although non-stoichiometric chalcogenide phase change materials (e.g., Ge2Sb2Te5, Sb2Te3) have been used in wearable electronics, their non-stoichiometric vacancies will inevitably degrade their bending stability and electrical contrast. In this study, we demonstrated that stoichiometric germanium monotelluride films deposited on flexible polyimide substrates exhibited excellent phase transition characteristics and ultra-high bending stability under different bending states. The GeTe films showed improved bending stability under compressive strain than under tensile strain, and the GeTe films still exhibited high conductivity contrast (6 orders of magnitude) after 2000 bending cycles, with potential use in flexible memory devices. As a proof-of-concept, the bending stability of the stoichiometric GeTe films was shown to be significantly better than the non-stoichiometric Ge2Sb2Te5 films. Notably, we fabricated a flexible piezoresistive sensor based on the GeTe film, which exhibited good sensitivity (gauge factor is 38), low detection limit (0.1%), short response time (83.3 ms), good reliability and repeatability (more than 1200 cycles) and high heat resistance (200 ℃), and was used to track human pulse, as well as finger and face movements. The results showed that the piezoresistive sensor had good sensitivity and a stable time-resolved electrical response, and could be used to detect the movement of different human body parts and the small signals of different pressure points. These findings indicated that GeTe-based wearable piezoresistive sensors hold significant promise for medical health monitoring and biosensing applications.

Programmable nanophotonic planar resonator filter-absorber based on phase-change InSbTe

Reconfigurable plasmonic-photonic electromagnetic devices have been incessantly investigated for their great ability to optically modulate through external stimuli to meet today's emerging needs, with chalcogenide phase-change materials being promising candidates due to their remarkably unique electrical and optics, enabling new perspectives in recent photonic applications. In this work, we propose a reconfigurable resonator using planar layers of stacked ultrathin films based on Metal-dielectric-PCM, which we designed and analyzed numerically by the Finite Element Method (FEM). The structure is based on thin films of Gold (Au), aluminum oxide (Al2O3), and PCM (In3SbTe2) used as substrate. The modulation between the PCM phases (amorphous and crystalline) allows the alternation from the filter to the absorber structure in the infrared (IR) spectrum (1000–2500 nm), with an efficiency greater than 70% in both cases. The influence of the thickness of the material is also analyzed to verify tolerances for manufacturing errors and dynamically control the efficiency of transmittance and absorptance peaks. The physical mechanisms of field coupling and transmitted/absorbed power density are investigated. We also analyzed the effects on polarization angles for Transversal Electric (TE) and Transversal Magnetic (TM) polarized waves for both cases.

An optical scheme of on-chip matrixing by phase-change based tunable weighting of photonic tensor unit

In this paper, we propose an optical scheme of on-chip matrixing for matrix-vector multiplications (MVMs) by configuring each matrix element into a photonic tensor processing unit (TPU) with wavelength division multiplexing and the actively tunable weighting for scalar multiplication. The low loss chalcogenide phase change material of Ge2Sb2Se4Te (GSST) is employed and modeled with intermediate states for multilevel tunable weighting of each TPU. The dynamic electro-thermal process of GSST phase transition using ITO for electrical heating is simulated and well confirms the switchable weighting of TPUs. Simulation results reveal that a 7 V voltage pulse of 500 ns duration followed by a 9 V voltage pulse of 1500 ns duration and another pulse of 14 V voltage and 500 ns duration can set data value of ‘0’ and ‘1’ for each TPU. Taking a set of incident light with varied wavelengths and powers as input vectors, the quantized MVM outputs of photocurrents with varied amplitude are obtained after photoelectric conversion. Finally, the photonic integrated circuit level simulations by Lumerical INTERCONNECT perfectly confirm our scheme of on-chip matrixing for optical MVMs and computing.

Reversibly reconfigurable GSST metasurface for broadband beam steering and achromatic focusing in the long-wave infrared.

Active optical metasurfaces promise compact, lightweight, and energy-efficient optical systems with unprecedented performance. Chalcogenide phase-change material Ge2Sb2Se4Te1 (GSST) has shown tremendous advantages in the design of mid-infrared active metasurfaces. However, most of the GSST-based active metasurfaces can only work efficiently within a narrow frequency range. Furthermore, their design flexibility and reversible switching capability are severely restricted by the melting of GSST during re-amorphization. Here, we propose broadband, reversibly tunable, GSST-based transmissive metasurfaces operating in the long-wave infrared spectrum, where the GSST micro-rods are cladded by refractory materials. To accurately evaluate the performance of the proposed metasurfaces, two figures of merits are defined: FOMΦ for the evaluation of wavefront matching, and FOMop for the assessment of the overall performance incorporating both wavefront modulation efficiency and switching contrast ratio. For the proof of concept, two meta-devices are numerically presented: a multifunctional deflector that offers continuous beam steering and long-wave pass filtering simultaneously, and a large-area (1 cm × 1 cm) broadband (11-14 µm) varifocal metalens with the ability of achromatic imaging (12.5-13.5 µm). In particular, the metalens features high FOMop values over 16 dB in the achromatic band, with the average focusing efficiency approximating 70% (60%) in amorphous (crystalline) state and a spectral switching contrast ratio surpassing 25 dB. Our design scheme provides an additional degree of freedom for dynamic modulation and offers a novel approach for achieving high-efficiency mid-infrared compact optical devices.