Carrier Diffusion Length Research Articles

Quantitative photothermal investigation of nonradiative recombination parameters in GaAs/InAs(QD)/GaAs quantum dot structures using a three-layer laser beam deflection model

In this paper, we developed a theoretical model for the photothermal deflection technique in order to investigate the electronic parameters of three-layer semiconductor structures. This model is based on the resolution of thermal and photogenerated carrier diffusion-wave equations in different media. Theoretical results show that the amplitude and phase of the photothermal deflection signal is very sensitive to the nonradiative recombination parameters. The theoretical model is applied to one layer of InAs quantum dots (QDs) inserted in GaAs matrix InAs/GaAs QDs in order to investigate the QD density effects on nonradiative recombination parameters in InAs through fitting the theoretical photothermal beam deflection signal to the experimental data. It was found that the minority carrier lifetime and the electronic diffusivity decrease as functions of increasing InAs QD density. This result is also related to the decrease in the mobility from 21.58 to 4.17 (±12.9%) cm2/V s and the minority carrier diffusion length from 0.62 (±5.8%) to 0.14 (±10%) μm, respectively. Furthermore, both interface recombination velocities S2/3 of GaAs/InAs (QDs) and S1/2 of InAs (QDs)/GaAs increase from 477.7 (±6.2%) to 806.5 (±4%) cm/s and from 75 (±7.8%) to 148.1 (±5.5%) cm/s, respectively.

As‐Doped Polycrystalline CdSeTe: Localized Defects, Carrier Mobility and Lifetimes, and Impact on High‐Efficiency Solar Cells

AbstractThe efficiency potential for single‐junction photovoltaics (PV) is described by the detailed balance model, which requires the elimination of nonradiative recombination and perfect minority carrier collection. Improvements in GaAs, Si, and perovskite PV follow this model. It might be more complex for CdTe, a leading thin‐film PV technology. While lifetime, passivation, and doping goals for 25% efficient CdTe solar cells are largely reached, voltage is ≈20% below the detailed balance limit. Why is that? In Se‐alloyed CdSexTe1‐x (Se is required for >20% efficiency) additional losses can occur due to electrostatic and bandgap fluctuations and due to electronic trap states. To understand mechanisms limiting CdSeTe solar cell performance and to suggest improvements, carrier dynamics, and transport in CdSexTe1‐x with variation in Se composition and as doping is analyzed. It is shown that trapping, likely due to anion‐site defects and their complexes, is correlated with low charge carrier mobility of 0.1–0.6 cm2 (Vs)−1. Even with 1000 ns charge carrier lifetimes, carrier diffusion length is less than the absorber thickness, reducing efficiency to ≈23%. Device simulations are used to analyze the performance of CdSexTe1‐x solar cells; thermodynamic models are not sufficient for absorbers with electronic disorder and trapping.

Monte Carlo Simulation of Electron Beam Induced Current in Au/Si Schottky Diodes: effects of metal layer thickness and minority carrier diffusion length

The Electron Beam Induced Current (EBIC) technique, when combined with scanning electron microscopy (SEM), offers valuable insights into the electronic properties of semiconductor materials at the nanoscale. This study leverages EBIC and Monte Carlo simulations to investigate the behavior of Schottky diodes, particularly focusing on the influence of gold layer thickness on current gain and backscatter electron (BSE) yield. The simulation results reveal the significant effects of depletion depth and minority carrier diffusion length on the diode’s performance. A key finding is that the EBIC current decreases with increased gold layer thickness, due to a higher BSE fraction. Additionally, at low beam energies, the current is negligible when the interaction volume is confined within the metal layer, while at higher energies, some penetration into the semiconductor occurs, generating a measurable EBIC current. These findings provide a better understanding of the interplay between metal layer thickness and semiconductor performance, which is crucial for optimizing semiconductor devices.

Disentangling the Optoelectronic Behavior of Lead Iodide Governed by Two-Dimensional Electron Confinement.

We present a joint experimental and theoretical study for complete spectroscopic characterization and optoelectronic properties of lead iodide. Experimentally, we combine X-ray diffraction experiments to elucidate the structure with photoelectron spectroscopy to explore its electronic structure. Computationally, simulations are performed in the frame of density functional theory. We show that PbI2 presents a two-dimensional layered structure and exhibits a large transient photocurrent effect under visible light illumination, which are compatible with the surface photovoltage scenario. The transient photocurrent has an extremely long lifetime: when the sample is lightened with visible light, it shows very long relaxation times and, consequently, huge charge carrier diffusion lengths. We explain this anomalous behavior with the slow carrier mobility of holes and electrons caused by the 2D electron confinement in the layered material. Our results can be used as a simple model for understanding the optoelectronic properties of more complex 2D hybrid perovskites.

Zeolite-decorated black TiOx quantum dots for photocatalytic degradation of organic cationic dyes under LED light irradiation

Defect engineering is a promising strategy to reduce the band gap of semiconductors, enhancing their photocatalytic activity under visible light by introducing intra-bandgap energy states. Among the materials studied, oxygen-deficient black TiOx stands out due to its potential in photocatalytic reduction and hydrogen evolution. However, the valence band edge maximum (VBM) of TiOx is not thermodynamically favorable for the direct oxidation of water to hydroxyl radicals (H2O/•OH). Although the formation of extensive oxygen vacancies is necessary to extend the light absorption of black TiOx to longer wavelengths, a high density of oxygen vacancies (Ov) significantly shortens the diffusion length of charge carriers within the TiOx, leading to increased recombination of electrons and holes (e-/h+), thereby suppressing photocatalytic activity. To overcome these limitations, confining TiOx particles to the quantum dot (QD) size range and constructing heterojunctions with a secondary phase can substantially improve charge carrier separation and photocatalytic performance. In addition to engineering the electronic structure of composite photocatalysts, the preaccumulation of pollutants and their subsequent degradation is an effective strategy. This method decreases the distance between the adsorbed pollutant and the active sites for reactive oxygen species (ROSs) generation, enhancing the efficiency of the photocatalytic degradation process. In this study, we confined TiOx particles to the quantum dot size range by constructing a heterojunction with H-Beta zeolite, which contains defect-induced energy states within its wide band gap. This type of zeolite is particularly effective in adsorbing cationic azo dyes, facilitating pre-accumulation and degradation. The synthesized catalysts were extensively characterized using HRTEM to determine the average size of the TiOx particles and photoluminescence (PL) analysis to investigate charge carrier separation. Our results demonstrated that while TiOx alone showed negligible degradation efficiency, and no •OH were detected, the QD TiOx/Z4 composite achieved complete oxidation of CV by •OH, as confirmed by TOC analysis. The photocatalytic degradation mechanism was proposed based on these experimental findings. These insights could be of significant interest to researchers exploring defective semiconductors for photocatalytic oxidation of organic pollutants in the liquid phase under visible light (LED) irradiation.

Solution-Processed Micro-Nanostructured Electron Transport Layer via Bubble-Assisted Assembly for Efficient Perovskite Photovoltaics.

Organic-inorganic halide perovskite solar cells (PSCs) have attracted significant attention in photovoltaic research, owing to their superior optoelectronic properties and cost-effective manufacturing techniques. However, the unbalanced charge carrier diffusion length in perovskite materials leads to the recombination of photogenerated electrons and holes. The inefficient charge carrier collecting process severely affects the power conversion efficiency (PCE) of the PSCs. Herein, a solution-processed SnO2 array electron transport layer with precisely tunable micro-nanostructures is fabricated via a bubble-template-assisted approach, serving as both electron transport layers and scaffolds for the perovskite layer. Due to the optimized electron transporting pathway and enlarged perovskite grain size, the PSCs achieve a PCE of 25.35% (25.07% certificated PCE).

Gradient-doped BiVO4 Dual Photoanodes for Highly Efficient Photoelectrochemical Water splitting.

Bismuth vanadate (BiVO4) is regarded as a promising photoanode candidate for photoelectrochemical (PEC) water splitting, but is limited by low efficiency of charge carrier transport and short carrier diffusion length. In this work, we report a strategy comprised of the gradient doping of W and back-to-back stacking of transparent photoelectrodes, where the 3-2 wt.% W gradient doping enhances charge carrier transport by optimizing the band bending degree and back-to-back stack configuration shortens carrier diffusion length without much sacrifice of photons. As a result, the photocurrent density of 3-2% W:BiVO4 photoanode reaches 2.20 mA cm-2 at 1.23 V vs. hydrogen electrode (RHE) with a charge transport efficiency of 76.1% under AM 1.5G illumination, and the back-to-back stacked 3-2% W:BiVO4 photoanodes achieves a photocurrent of 4.63 mA cm-2 after loading Co-Pi catalyst and anti-reflective coating under AM 1.5G illumination, with long-term stability of 10 hours.

Assessment of photovoltaic efficacy in antimony-based cesium halide perovskite utilizing transition metal chalcogenide

Antimony-based perovskites have been recognized for their distinctive optoelectronic attributes, standard fabrication methodologies, reduced toxicity, and enhanced stability. The objective of this study is to systematically investigate and enhance the performance of all-inorganic solar cell architectures by integrating Cs3Sb2I9, a perovskite-analogous material, with WS2—a promising transition metal dichalcogenide—used as the electron transport layer (ETL), and Cu2O serving as the hole transport layer (HTL). This comprehensive assessment extends beyond the mere characterization of material attributes such as layer thickness, doping levels, and defect densities, to include a thorough investigation of interfacial defect effects within the structure. Optimal efficiency was observed when the Cs3Sb2I9 absorber layer thickness was maintained within the 600-700 nm range. The defect tolerance for the absorber layer was identified at 1×1015/cm3, with the ETL and HTL layers exhibiting significant defect tolerance at 1×1016/cm3 and 1×1017/cm3, respectively. Furthermore, this study calculated the minority carrier lifetime and diffusion length, establishing a strong correlation with defect density; a minority carrier lifetime of approximately 1 µs was noted for a defect density of1×1014/cm3 in the absorber layer. A noteworthy finding pertains to the balance between the high work function of the back contact and the incorporation of p-type back surface field layers, revealing that interposing a highly doped p+ layer between the Cu2O and the metal back contact can elevate the efficiency to 21.60%. This approach also provides the freedom to select metals with lower work functions, offering a cost-effective advantage for commercial-scale applications.

Perovskite versus Standard Photodetectors.

Perovskites have been largely implemented into optoelectronics as they provide several advantages such as long carrier diffusion length, high absorption coefficient, high carrier mobility, shallow defect levels and finally, high crystal quality. The brisk technological development of perovskite devices is connected to their relative simplicity, high-efficiency processing and low production cost. Significant improvement has been made in the detection performance and the photodetectors' design, especially operating in the visible (VIS) and near-infrared (NIR) regions. This paper attempts to determine the importance of those devices in the broad group of standard VIS and NIR detectors. The paper evaluates the most important parameters of perovskite detectors, including current responsivity (R), detectivity (D*) and response time (τ), compared to the standard photodiodes (PDs) available on the commercial market. The conclusions presented in this work are based on an analysis of the reported data in the vast pieces of literature. A large discrepancy is observed in the demonstrated R and D*, which may be due to two reasons: immature device technology and erroneous D* estimates. The published performance at room temperature is even higher than that reported for typical detectors. The utmost D* for perovskite detectors is three to four orders of magnitude higher than commercially available VIS PDs. Some papers report a D* close to the physical limit defined by signal fluctuations and background radiation. However, it is likely that this performance is overestimated. Finally, the paper concludes with an attempt to determine the progress of perovskite optoelectronic devices in the future.

Porous Bismuth Vanadate Photoelectrodes for Solar Water Oxidation Reaction

Bismuth vanadate (BiVO4), a material known for its high visible light activity and good stability, is a promising candidate as a photoanode for overall water splitting [1]. Its performance is limited by its relatively short charge carrier diffusion length, which has recently been estimated to be ~15 nm [2]. For these kinds of photo-absorbers, commercial flat transparent conducting oxide (TCO) substrates are unsuitable since the thickness needed to absorb a sufficient amount of light far exceeds the carrier diffusion length. With this in mind, deposition of very thin semiconductor film onto the internal structure of (micro)porous, conducting substrates can ensure sufficient light absorption [3], whilst ensuring the individual film thickness is uniformly lower than the carrier diffusion length. Nanostructured TCO substrates can be fabricated using a convenient template-free technique called glancing angle deposition (GLAD). The glancing angle deposition method can be used to synthesize different variations of highly oriented submicron-sized pillars, ranging from vertical and tilted columns to zig-zag and helical structures with the help of shadowing effects and substrate rotation [4]. The optical and electrical properties of nanostructured TCO’s were found to depend on the type of material and the substrate temperature during deposition. We find that pillars made from tin-doped indium oxide show good conductivity (79 Ohm/sq) and are promising for the fabrication of nanostructured substrates for bismuth vanadate. A recently developed alternative approach is the use of transparent, porous, conducting substrates (TPCS) made from quartz felt, in which the quartz fibers are coated with F-doped SnO2 [5]. We found that a BiVO4 film thickness of 50 nm within these porous substrates is enough to absorb the same amount of light as a compact 400 nm bismuth vanadate film. We will discuss the deposition of BiVO4 into the TPCS substrates and the photoelectrochemical performance of these porous photoanodes.[1] K. Sivula and R. van de Krol, Nat. Rev. Mater. 1, 15010 (2016)[2] M. Schleuning, M. Kölbach, F. F. Abdi, K. Schwarzburg, M. Stolterfoht, R. Eichberger, R. van de Krol, D. Friedrich, H. Hempel, PRX Energy 1, 023008 (2022)[3] U. Björksten, J. Moser and M. Grätzel, Chem. Mater. 6, 858 (1994)[4] M. M. Hawkeye, M. T. Taschuk and M. J. Brett, “Glancing Angle Deposition of Thin Films”, John Wiley & Sons, Ltd., Chichester, UK (2014).[5] M. Caretti, E. Mensi, R.-A. Kessler, L. Lazouni, B. Goldman, L. Carbone, S. Nussbaum, R. A. Wells, H. Johnson, E. Rideau, J.-h. Yum, K. Sivula, Adv. Mater. 35, 2208740 (2023)

(Invited) Spatially–Resolved Luminescence Properties of Etched Quantum Well Microstructures

Fabrication processes for photonic devices, especially micro- or nano-photonic devices, call for some kind of control of the materials’ optical properties at the stage of the final device. Our study focusses on measuring the optical quality of quantum well (QW) containing materials after device processing, using steps such as etching which allows fabrication of optical waveguides for example. We first designed and realized specific material structures based on an InP substrate, with a series of InAsxP1-x quantum wells such as illustrated on the figure. The samples were grown by gas-phase molecular beam epitaxy. The samples were characterized by spatially-resolved photoluminescence (PL) at low temperature (10 K). The top right part shows a typical spectrum measured from the sample we have grown: sharp lines associated with each QW can be clearly identified thanks to a careful grading of the As/P composition in each QW, while keeping its thickness to a constant value (typically 7 to 8 nm). Then we etched the samples (in the form of rectangular ridges as shown) using different etching processes, based either on wet etching or reactive ion etching (RIE), and recorded the PL spectra with high spatial resolution across the obtained structures. In parallel, the samples after etching were also characterized by cross-sectional scanning electron microscopy. Data processing from the series of PL spectra was then performed in order the characterize the effects of etching on the QW materials.We show PL intensity profiles across a series of etched stripes of different widths resulting from a RIE process. These intensity profiles were obtained from the lines associated with the different QWs in the structure. One can observe, first of all, that the PL intensity gradually increases from the edges to the center of the stripes, over a range of up to 10 µm. One can also observe that for “wide” stripes, i.e. 30 or 50 µm, the PL intensity for each line saturates at the same level in the central part. However, for the narrower stripes (10 or 20 µm), the PL signal does not reach the same level. This is the signature of some PL-limitation phenomenon, which extends its effects far from the etched sidewalls. A “standard” phenomenon resulting solely from non-radiative recombination at the etched sidewalls is excluded. Non-radiative recombination can only affect regions which are less than one charge carrier diffusion length from the sidewalls. Diffusion length in our materials is less than 1 µm. Therefore, some kind of “long range” interaction seems to affect our samples. We propose that this long range interaction is due to some stray static electric field resulting from the presence of residual ions left by the etching process at the sidewalls. The electric field affects the PL intensity through dissociation of excitons. Moreover, we observed that different conditions for the etching process (wet etching versus RIE, crystallographic orientation of the stripes) impact the magnitude of this PL intensity quenching.[1] Pearton S 1997 Materials Science and Engineering: B 44 1–7[2] Landesman J P, Isik-Goktas N, LaPierre R R, Levallois C, Ghanad-Tavakoli S, Pargon E, Petit-Etienne C and Jiménez J 2021 Journal of Physics D: Applied Physics 54 445106[3] Fiore A, Rossetti M, Alloing B, Paranthoen C, Chen J X, Geelhaar L and Riechert H 2004 Physical Review B 70 205311[4] Bludau W and Wagner E 1976 Physical Review B 13 5410–5414 Figure 1

Mapping and Characterization of Local Structures of CsPbBr3.

Inorganic perovskite CsPbBr3 is a promising material for optoelectronic applications and high-energy radiation detection due to its excellent photophysical properties, high carrier mobility, large carrier diffusion length, and higher stability than organic perovskite materials. Understanding phase transitions at the atomic level is crucial for optimizing its applications. Here, we employ experimental characterizations and molecular dynamics simulations to study the phase transitions in CsPbBr3 as a function of temperature. The simulation results are compared with the experimental results, which include X-ray diffraction (XRD). Our simulations provide new insights into the electronic structure and dynamic behavior of the Cs, Pb, and Br atoms as a function of temperature. We observe distinct phase transitions from monoclinic to cubic and analyze the associated changes in the local environment through atomic density contour maps. Our analysis of the atomic density distributions of the Pb, Br, and Cs atoms provides information about the crystal symmetry as a function of temperature. The tilt and rotation angles of [PbBr6] octahedra are increasing with the temperature increase and are found nonzero above 410 K when the structure is cubic, exhibiting the presence of dynamic tilting. Overall, our findings shed light on the thermal stability and structural dynamics of CsPbBr3, contribute to the fundamental understanding of its phase behavior, and provide a crucial pivot for guiding the design of next-generation optoelectronic and radiation detection devices.

Low-dimensional halide perovskites for advanced electronics

Halide perovskites are gaining prominence as promising materials for future electronic applications, primarily due to their unique properties including long carrier diffusion lengths, tunable bandgap, facile synthesis, and cost efficiency. However, polycrystalline halide perovskite thin films, which have been widely studied to date, have significant drawbacks including uncontrollable grain boundaries and instability issues. Recently, low-dimensional halide perovskites (LD HPs) offer enhanced stability and adaptable morphologies, making them attractive candidates for next-generation electronics beyond optoelectronics. This review comprehensively explores recent advancements in LD HP-based electronics, covering structural characteristics, synthesis methods tailored to different dimensions, and diverse applications. Furthermore, the impressive performance demonstrated by LD HPs in electronic applications including resistive random-access memory, advanced transistors, and neuromorphic computing hardware is discussed. Finally, the review outlines the challenges and perspectives required to scale up LD HP-based advanced electronics for commercial production, offering valuable insights for researchers venturing into the realm of new materials for advanced electronics.

Review about Organic-Inorganic Perovskite Single Crystal : Synthesis Methods, Properties and Applications

Due to their easy synthesis and exceptional optoelectronic characteristics, such as their long carrier diffusion length, high carrier mobility, low trap density, and tuneable absorption edge ranging from ultraviolet (UV) to near-infrared (NIR), perovskite single crystals have attracted a lot of attention in recent years. These properties have the potential to be used in solar cells, photo-detectors (PDs), lasers, and other devices. In this review provides detailed information about the synthesis methods and applications of perovskite single crystals.

High-Entropy Design for 2D Halide Perovskite.

Hybrid halide perovskites are good candidates for a range of functional materials such as optical electronic and photovoltaic devices due to their tunable band gaps, long carrier diffusion lengths, and solution processability. However, the instability in moisture/air, the toxicity of lead, and rigorous reaction setup or complex postprocessing have long been the bottlenecks for practical application. Herein, we present a simultaneous configurational entropy design at A-sites, B-sites, and X-sites in the typical (CHA)2PbBr4 two-dimensional (2D) hybrid perovskite. Our results demonstrate that the high-entropy effect favors the stabilization of the hybrid perovskite phase and facilitates a simple crystallization process without precise control of the cooling rate to prepare regular crystals. Moreover, high-entropy 2D perovskite crystals exhibit tunable energy band gaps, broadband emission, and a long carrier lifetime. Meanwhile, the high-entropy composition almost maintains the initial crystal structure in deionized water for 18 h while the original (CHA)2PbBr4 crystal mostly decomposes, suggesting obviously improved humidity stability. This work offers a facile approach to synthesize humidity-stable hybrid perovskites under mild conditions, accelerating relevant preparation of optoelectronics and light-emitting devices and facilitating the ultimate commercialization of halide perovskite.

Forward bias annealing of proton radiation damage in NiO/Ga2O3 rectifiers

17 MeV proton irradiation at fluences from 3–7 × 1013 cm−2 of vertical geometry NiO/β-Ga2O3 heterojunction rectifiers produced carrier removal rates in the range 120–150 cm−1 in the drift region. The forward current density decreased by up to 2 orders of magnitude for the highest fluence, while the reverse leakage current increased by a factor of ∼20. Low-temperature annealing methods are of interest for mitigating radiation damage in such devices where thermal annealing is not feasible at the temperatures needed to remove defects. While thermal annealing has previously been shown to produce a limited recovery of the damage under these conditions, athermal annealing by minority carrier injection from NiO into the Ga2O3 has not previously been attempted. Forward bias annealing produced an increase in forward current and a partial recovery of the proton-induced damage. Since the minority carrier diffusion length is 150–200 nm in proton irradiated Ga2O3, recombination-enhanced annealing of point defects cannot be the mechanism for this recovery, and we suggest that electron wind force annealing occurs.

High‐performance 110 kVp hard x‐ray detector based on all‐crystalline‐surface passivated perovskite single crystals

AbstractHalide perovskite single crystals (SCs) have attracted much attention for their application in high‐performance x‐ray detectors owing to their desirable properties, including low defect density, high mobility–lifetime product (μτ), and long carrier diffusion length. However, suppressing the inherent defects in perovskites and overcoming the ion migration primarily caused by these defects remains a challenge. This study proposes a facile process for dipping Cs0.05FA0.9MA0.05PbI3 SCs synthesized by a solution‐based inverse temperature crystallization method into a 2‐phenylethylammonium iodide (PEAI) solution to reduce the number of defects, inhibit ion migration, and increase x‐ray sensitivity. Compared to conventional spin coating, this simple dipping process forms a two‐dimensional PEA2PbI4 layer on all SC surfaces without further treatment, effectively passivating all surfaces of the inherently defective SCs and minimizing ion migration. As a result, the PEAI‐treated perovskite SC‐based x‐ray detector achieves a record x‐ray sensitivity of 1.3 × 105 μC Gyair−1 cm−2 with a bias voltage of 30 V at realistic clinical dose rates of 1–5 mGy s−1 (peak potential of 110 kVp), which is 6 times more sensitive than an untreated SC‐based detector and 3 orders of magnitude more sensitive than a commercial α‐Se‐based detector. Furthermore, the PEAI‐treated‐perovskite SC‐based x‐ray detector exhibits a low detection limit (73 nGy s−1), improved x‐ray response, and clear x‐ray images by a scanning method, highlighting the effectiveness of the PEAI dipping approach for fabricating next‐generation x‐ray detectors.image

Surface Photovoltage Spectroscopy as a Valuable Tool for Evaluating Oxidation Processes in the Microelectronics Industry

In the present study, the minority carrier diffusion length (MCDL), determined by surface photovoltage spectroscopy measurements, is compared in n‐ and p‐type Si wafers after their oxidation under different conditions using various tools (horizontal and vertical furnaces, atomic layer deposition (ALD), low‐pressure chemical vapor deposition, and plasma‐enhanced chemical vapor deposition). It is shown that MCDL varies significantly depending on the design of furnaces, oxidation temperatures, the type of gases used before and during oxidation, and their flow ratios. The type and crystal growth method of Si wafers used for the oxidation also play a significant role and influence MCDL. Additionally, MCDL after the deposition of alumina layers using ALD techniques is found to be significantly larger compared to that observed after the thermal oxidation of Si. The larger values of MCDL after the ALD of Al2O3 are detected independent of temperature and precursors used for the deposition. The origin of different MCDL values after various oxidation processes, with an emphasis on the formation of electrically active defects in Czochralski (CZ)‐ and float‐zone (FZ)‐grown Si wafers is discussed.

Halide perovskite x-ray detectors: Fundamentals, progress, and outlook

Halide perovskites have demonstrated great potential in x-ray detectors, due to their high x-ray attenuation coefficient, large bulk resistance, ultralong carrier diffusion length, and adjustable bandgap. Moreover, their abundant raw materials and simple processing combined with excellent compatibility with integrated circuits make them ideal for cost-efficient and high-efficiency real-world imaging applications. Herein, we comprehensively reviewed advances and progress in x-ray detection devices based on halide perovskites. We expound on the fundamental mechanisms of interactions between x rays and matter as background and indicate different parameters for different types of x-ray detectors, which guides the basic requirements on how to select and design suitable materials for active layers. After emphasizing the superb properties of halide perovskites through the shortcomings of commercial materials, we evaluate the latest advancements and ongoing progress in halide perovskites with different dimensions and structures for both direct and indirect x-ray detectors, and discuss the effect of dimensional varieties on the device performance. We also highlight current challenges in the area of perovskite x-ray detectors and propose corresponding solutions to optimize halide perovskites and optimize x-ray detectors for next-generation imaging applications.

Hot Carrier Trapping and It's Influence to the Carrier Diffusion in CsPbBr3 Perovskite Film Revealed by Transient Absorption Microscopy.

The defects in perovskite film can cause charge carrier trapping which shortens carrier lifetime and diffusion length. So defects passivation has become promising for the perovskite studies. However, how defects disturb the carrier transport and how the passivating affects the carrier transport in CsPbBr3 are still unclear. Here the carrier dynamics and diffusion processes of CsPbBr3 and LiBr passivated CsPbBr3 films are investigated by using transient absorption spectroscopy and transient absorption microscopy. It's found that there is a fast hot carrier trapping process with the above bandgap excitation, and the hot carrier trapping would decrease the population of cold carriers which are diffusible, then lower the carrier diffusion constant. It's proved that LiBr can passivate the defect and lower the trapping probability of hot carriers, thus improve the carrier diffusion rate. The finding demonstrates the influence of hot carrier trapping to the carrier diffusion in CsPbBr3 film.