Carrier-selective Contacts Research Articles

Simulation of the functionality of ZnO, TiO2 and Ta2O5, and MoO2 carrier selective contacts of GaAs0.99Bi0.01 nanowire-based solar cells

Abstract Photovoltaic performance of perpendicularly aligned GaAs0.99Bi0.01/CSC/ITO core-shell nanowire solar cell is thoroughly investigated in this simulation based theoretical study for both electron selective contact (ESC) and hole selective contact (HSC) as carrier selective contact (CSC) shell around GaAs0.99Bi0.01 core nanowire. The overall performance has been compared with radial PiN doped GaAs0.99Bi0.01 NWSC to mark the improvement caused by carrier selectivity. ZnO, TiO2, and Ta2O5 materials have been chosen as ESC material and MoO2 is chosen as HSC material in order to carry out this comparative study. We have thoroughly performed geometry optimization test over a wide range of periods in order to select the optimized ITO (Indium Tin Oxide) thickness for obtaining maximum photo current generation. The maximum short circuit photo current density (Jsc) of 38.76 mA/cm2 is obtained with ZnO coated nanowire solar cell (NWSC) for a pitch (P) of 400 nm and ITO shell thickness of 90 nm. For this optimized geometry, TiO2, Ta2O5 and MoO2 coated structures offered Jsc of 35.82 mA/cm2, 35.69 mA/cm2, and 35.27 mA/cm2 respectively and the uncoated NW generated Jsc of 31.15 mA/cm2. The planar structure without coating exhibits a Jsc of 24.86 mA/cm2, which is significantly lower than the nanostructured solar cells. Finally Lumerical 3D charge transport simulator is used to perform the electrical stimulation of ZnO coated structure, which offers maximum ideal Jsc. A detailed electrical performance analysis of GaAs0.99Bi0.01/CSC/ITO unit nanowire solar cell for ZnO, TiO2, Ta2O5 as ESC and MoO2 as HSC have also been covered in this article which reveals that ZnO as ESC possesses promising potential for designing highly efficient solar cells as it offers a photo conversion efficiency(PCE) of the order of 25% and open circuit voltage (Voc) even for very less minority carrier lifetime (Ʈn) 0.1 ns of GaAs0.99Bi0.01 and 1ps Ʈn of ZnO.

Design perspectives of a thin film GaAs solar cell integrated with Carrier Selective contacts and anti-reflection coatings: Optical and device analysis

III-V thin-film solar cells (SCs) have shown exceptional optoelectronic properties and remarkable power conversion efficiency (PCE), attributed to their outstanding charge transport, efficient photon trapping, adaptability, and recycling of photons. In particular, incorporating anti-reflective coatings (ARCs) made from wide-bandgap oxides has proven effective in reducing optical losses, with reductions as low as 20 % being reported. Furthermore, the use of carrier-selective contacts in these designs not only eliminates the need for complex doped junctions but also simplifies the fabrication process, further enhancing their performance. Despite these advancements, relatively few studies have explored the integration of both ARCs and carrier-selective contacts in gallium arsenide (GaAs)-based thin-film solar cells. This gap represents a significant opportunity for improving the efficiency and performance of these devices. To address this, we present a GaAs thin-film solar cell incorporating an ARC layer for enhanced light-trapping and optimized photon absorption. In addition, we integrate carrier-selective contacts using titanium dioxide (TiO2) as the electron transport layer and molybdenum oxide (MoO3) as the hole transport layer, ensuring effective charge separation and collection. Our optical analysis demonstrates that, with an optimized ARC thickness, the optical losses in the 380 nm-thick GaAs absorber layer can be limited to 20 %. Moreover, by maintaining a surface recombination velocity (SRV) of 103 cm/s and a carrier lifetime of 10μs, the proposed design achieves an impressive PCE of approximately 23 %. This study highlights the potential of combining ARCs and carrier-selective contacts to push the performance of GaAs thin-film solar cells to new heights, paving the way for more efficient, and cost-effective photovoltaic technologies.

Effect of annealing on MoOx and interface properties for carrier-selective contact solar cells with different passivation layers

The structural, electrical and optical properties of molybdenum oxide (MoOx) thin films prepared by magnetron sputtering are studied with annealing temperature. The interface properties of silicon with the intrinsic amorphous silicon (a-Si:H(i)) and alumina (AlOx) passivation layers are investigated by the minority carrier lifetime and implied-Voc (iVoc). The AlOx shows the better passivation properties and thermal stability for the carrier-selective contact solar cells. The Ce-doped In2O3(ICO) is deposited on the surface of MoOx thin films. It is found that the optimized annealing temperature is 125 °C for the carrier selective contact solar cells with the a-Si:H(i) passivation layer. It could increase to 175 °C for the AlOx passivation layer.

Improved electrical contact properties in Indium-free silicon heterojunction solar cells with amorphous SnO2 TCO layers

Silicon heterojunction (SHJ) solar cells are recognized as one of the most efficient architectures in silicon-based photovoltaic devices. However, the reliance on indium (In)-based transparent conductive oxides (TCO) is anticipated to constrain their production capacity due to the critical and economically volatile nature of In. Recently, low-temperature-grown amorphous SnO2 (a-SnO2) films have been explored as an earth-abundant alternative TCO material. In this study, we examine the electrical contact properties of a-SnO2 layers employed as TCO layers in SHJ cells, focusing on their interaction with the underlying carrier selective contact layers. Our findings indicate that a stack of doped amorphous silicon (a-Si:H) and a-SnO2 exhibits relatively high specific contact resistivity, leading to a significant reduction in the device's fill factor. To address this issue, we propose two approaches: the insertion of a thin ZnO-based TCO layer between a-Si:H and a-SnO2, and the use of nanocrystalline silicon layers in place of a-Si:H. Both approaches effectively reduce the contact resistivity, resulting in improvements in fill factor and conversion efficiency comparable to those of benchmark device with In-based TCOs. Based on these findings, we demonstrate a high-efficiency, In-free, SnO2-based SHJ cell.

A novel dual functional gradient Zn(O,S)/Mg electron-selective contact for dopant‐free silicon solar cells with efficiencies approaching 21 %

Dopant-free carrier-selective contacts have the potential to mitigate or eliminate parasitic absorption, auger recombination losses, etc. Therefore, the vigorous development of dopant-free carrier-selective contact materials is an important way to enhance the performance of crystalline silicon (c-Si) photovoltaics. This study presents the concept of magnetron sputtering gradient deposited zinc oxide (Gd-Zn(O,S)) combined with a low work function magnesium metal layer. Subsequently, the Gd-Zn(O,S)/Mg bifunctional layer was further investigated and optimised to determine its suitability as a contact layer for electron transfer in c-Si solar cells. This strategy simultaneously enables a good passivation and a low contact resistance. The c-Si(n)/a-Si:H(i)/Gd-Zn(O,S)/Mg devices are constructed and achieved an optimal contact recombination current density (J0) of approximately 1.51 fA cm−2, along with a minimum ρc of approximately 35.89 mΩ.cm2. As a consequence, the power conversion efficiency of a prototype silicon heterojunction solar cell is 20.92 %. This study demonstrates that the strategy of replacing the a-Si:H(n) electron transport layer with Gd-Zn(O,S) is an effective approach for improving the SHJ cell. This study also provides new perspectives for designing novel dopant-free carrier-selective contact structures.

Analytical modeling of contact resistance and recombination for silicon heterojunction solar cells using hybrid carrier selective passivating contacts

Abstract Silicon heterojunction solar cells using Carrier Selective Passivating Contacts (CSPC) are the potential contenders for high efficiency next generation photovoltaics. Besides numerical simulations, the mathematical analysis of parameters affecting the performance of these cells is gaining considerable attention. In this work, the factors affecting the selectivity of silicon heterojunction solar cell using Hybrid Carrier Selective Passivating Contacts (H-CSPC) are investigated. This includes the evaluation of contact resistance and recombinations in the device. The contact resistance is analyzed in terms of partial resistances wherein an equivalent resistance model for the cell using H-CSPC is devised and resistances are inspected using quasi fermi level collapse over the contacts. The selectivity of the cell at each contact is examined and the condition for maximum selectivity is derived. Further, the recombinations in different regions of the cell using H-CSPC are analyzed. The recombinations at the TiO2/c-Silicon interface strongly deteriorate the V oc of the cell which is quantified using an analytical model under interface defect constraints and the results obtained are compared with simulations.

Synthesis and simulation study of titanium dioxide-based nanomaterial for electron carrier selective contact solar cell

This research introduces a novel approach to synthesizing titanium dioxide (TiO2) nanomaterials using the sol–gel method, specifically aimed at enhancing the performance of Silicon Heterojunction (SHJ) solar cells. The innovation lies in utilizing Iso-Propanol Alcohol and Titanium Tetra Isopropoxides for synthesis, leveraging TiO2’s wide bandgap and low work function to replace the conventional n-doped amorphous silicon layer. This approach is expected to overcome the limitations of traditional materials and significantly improve electron transport efficiency. Advanced characterization techniques were employed to assess the synthesized TiO2 nanomaterials. Atomic Force Microscopy (AFM) measured the roughness and 3D profile, while UV-V spectrophotometry evaluated the absorption properties. The structure and surface morphology were meticulously analyzed using Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). These comprehensive analyses ensured a detailed understanding of the nanomaterials’ physical properties. Simulations conducted with the AFORS-HET simulator revealed that TiO2, with a refractive index compatible with a-Si:H(n) and a work function of 4.6 eV, significantly enhances SHJ solar cell performance. The results demonstrated a remarkable 22.57 % improvement in efficiency, achieving an open-circuit voltage (Voc) of 716.8 mV, a short-circuit current density (Jsc) of 37.71 mA/cm2 and a fill factor (FF) of 83.49 %. These findings underscore the potential of TiO2 nanomaterials to revolutionize SHJ solar cell technology by providing a more efficient and effective electron transport layer. Future research will focus on refining the nanostructure of TiO2 further to enhance its photovoltaic applications, aiming to push the boundaries of current solar cell efficiencies even further. This study marks a significant advancement in the field of photovoltaic materials, presenting a novel and promising solution to improving solar energy conversion.

Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO2 contact deposition temperature

Carrier selective contacts are a primary requirement for fabricating silicon heterojunction solar cells (SHSCs). TiO2 is a prominent carrier selective contact in SHSCs owing to its excellent optoelectronic features such as suitable band offset, work function, and cost-effectiveness. Herein, we fabricated simple SHSCs in an Al/TiO2/p-Si/Ti/Au device configuration. Ultrathin 3 nm TiO2 layers were deposited onto a p-type silicon substrate using the atomic layer deposition method. The deposition temperature of TiO2 layers varied from 100 °C to 250 °C. X-ray photoelectron spectroscopic studies suggest that deposition temperature highly affects the chemical states of TiO2 and reduces the formation of defective state densities at the Fermi energy. The optical band gap values of TiO2 layers are also altered from 3.13 eV to 3.27 eV when the deposition temperature increases. The work function tuning from −5.13 eV to −4.83 eV has also been observed in TiO2 layers, suggesting the variation in Fermi level tuning, which arises due to changes in carrier concentrations at higher temperatures. Several device parameters, such as ideality factor, trap density, reverse saturation current density, barrier height, etc, have been quantified to comprehend the effects of deposition temperature on photovoltaic device performance. The results suggest that the deposition temperature significantly influences the charge transport and device performance. At an optimum temperature, a significant reduction in charge carrier recombination and trap state density has been observed, which helps to improve power conversion efficiency.

Fabrication of Thermally Evaporated CuIx Thin Films and Their Characteristics for Solar Cell Applications

Carrier-selective contacts (CSCs) for high-efficiency heterojunction solar cells have been widely studied due to their advantages of processing at relatively low temperatures and simple fabrication processes. Transition metal oxide (TMO) (e.g., molybdenum oxide, vanadium oxide, and tungsten oxide) thin films are widely used as hole-selective contacts (HSCs, required work function for Si solar cells > 5.0 eV). However, when TMO thin films are used, difficulties are faced in uniform deposition. In this study, we fabricated a copper (I) iodide (CuI) thin film (work function > 5.0 eV) that remained relatively stable during atmospheric exposure compared with TMO thin films and employed it as an HSC layer in an n-type Si solar cell. To facilitate efficient hole collection, we conducted iodine annealing at temperatures of 100–180 °C to enhance the film’s electrical characteristics (carrier density and carrier mobility). Subsequently, we fabricated CSC Si solar cells using the annealed CuIx layer, which achieved an efficiency of 6.42%.

Carrier transport mechanisms of titanium nitride and titanium oxynitride electron-selective contact in silicon heterojunction solar cells

It is widely accepted that an effective carrier-selective contact is indispensable for high performance crystalline silicon (c-Si) solar cells. However, the properties of these carrier-selective contact materials significantly differ from c-Si in terms of band gap, work function, lattice constant. Consequently, this gives rise to challenges such as band discontinuity and suspended bonds at the interface, which subsequently impact the specific carrier transport process and potentially lead to a reduction primarily in the fill factor at the device level. Titanium nitride (TiN) and titanium oxynitride (TiOxNy) have been employed as an electron-selective contact in both c-Si and perovskite solar cells, demonstrating their effectiveness in enhancing the performance of these devices. Based on the detailed characterizations of the band alignment, the carrier transport mechanisms are analyzed using multiple models, and the theoretical results are basically self-consistent through the verification of variable temperature experiments. These analytical methods can also provide solutions for analyzing the band structure and transport mechanism of diverse heterojunctions, ultimately contributing to the design and optimization of semiconductor heterojunction devices.

Highly Efficient and Highly Flexible Thin Crystalline Silicon Heterojunction Solar Cells Based on Dopant-Free Carrier-Selective Contacts Fabricated with Simple Processes

Highly Efficient and Highly Flexible Thin Crystalline Silicon Heterojunction Solar Cells Based on Dopant-Free Carrier-Selective Contacts Fabricated with Simple Processes

Monolithic Selenium/Silicon Tandem Solar Cells

Selenium is experiencing renewed interest as a promising candidate for the wide bandgap photoabsorber in tandem solar cells. However, despite the potential of selenium-based tandems to surpass the theoretical efficiency limit of single-junction devices, such a device has never been demonstrated. In this study, we present the first monolithically integrated selenium/silicon tandem solar cell. Guided by device simulations, we investigate various carrier-selective contact materials and achieve encouraging results, including an open-circuit voltage of Voc=1.68V from suns-Voc measurements. The high open-circuit voltage positions selenium/silicon tandem solar cells as serious contenders to the industrially dominant single-junction technologies. Furthermore, we quantify a pseudo fill factor of more than 80% using injection-level-dependent open-circuit voltage measurements, indicating that a significant fraction of the photovoltaic losses can be attributed to parasitic series resistance. This work provides valuable insights into the key challenges that need to be addressed for realizing higher efficiency selenium/silicon tandem solar cells. Published by the American Physical Society 2024

Tailoring of Interface Quality of MoOx/Si Solar Cells

Transition metal oxide films (TMO) as passivating contacts with improved opto-electronic characteristics play an important role in improving the silicon solar cell device efficiency. In this report, the effect of sputtering power on the optical properties of MoOx and the quality of MoOx/n-Si interface for its application in a silicon solar cell as carrier selective contacts has been reported. The optical transmittance of the film greater than 80 % in the visible and near infrared region of the spectrum is observed, which further improved with sputtering power. The creation of oxygen ion vacancies, which acts as positively charged structural defects able to capture one or two electrons led to the decrease of optical band gap from 3.70 eV to 3.23 eV at higher power. The oxygen vacancies occupied by electrons acts as donor centers, which lies close to the valence band, were responsible for modulation in electrical properties. The electrical properties of MoOx/n-Si interface was analyzed using current-voltage (I-V) measurements for its application as selective contact. A significant change in the selectivity parameters, like barrier height, I0 and series resistance of MoOx, has been observed with dc power. These extracted parameters showed that the sputtering power has a great influence on the selectivity of the charge carriers.

On Numerical Modelling and an Experimental Approach to Heterojunction Tandem Solar Cells Based on Si and Cu2O/ZnO—Results and Perspectives

A comparative analysis of three advanced architectures for tandem solar cells (SCs) is discussed, respectively: metal oxide, thin film, and perovskite. Plasmonic solar cells could further increase solar cell efficiency. Using this development, an innovative PV technology (an SHTSC based on metal oxides) represented by a four-terminal Cu2O/c-Si tandem heterojunction solar cell is investigated. The experimental and numerical modelling study defines the main aim of this paper. The experimental approach to SHTSCs is analysed: (1) a Cu2O layer is deposited using a magnetron sputtering system; (2) the morphological and optical characterization of Cu2O thin films is studied. The electrical modelling of silicon heterojunction tandem solar cells (SHTSCs) is discussed based on five simulation tools for the optimized performance evaluation of solar devices. The main novelty of this paper is represented by the following results: (1) the analysis suggests that the incorporation of a buffer layer can improve the performance of a tandem heterojunction solar cell; (2) the effect of interface defects on the electrical characteristics of the AZO/Cu2O heterojunction is discussed; (3) the stability of SHTSCs based on metal oxides is studied to highlight the degradation rate in order to define a reliable solar device. Perspectives on SHTSCs based on metal oxides, as well as Si perovskite tandem solar cells with metal oxides as carrier-selective contacts, are commented on.

Sn‐Doped Nb2O5 Films as Effective Hole‐Selective Passivating Contacts for Crystalline Silicon Solar Cells

Carrier‐selective contacts (CSCs) in crystalline silicon (c‐Si) solar cells have attracted great attention due to suppressing contact region recombination and achieving higher conversion efficiency. Among transition metal oxides for CSCs, niobium oxide (Nb2O5) is considered as an attractive candidate for electron‐selective contact due to its excellent passivation properties and small conduction band offsets with c‐Si. Nevertheless, the performance of c‐Si solar cells employing Nb2O5 contact layer has not been explored yet. Herein, the carrier selectivity of solution‐processed Nb2O5 films is investigated for c‐Si. Interestingly, Nb2O5 exhibits high electron‐blocking performance and low contact resistivities with p‐Si. The ultra‐thin SiOx interlayer formed by UV–O3 pretreatment further reduces the contact resistivities and increases minority carrier lifetime due to the improved contact interface. The Sn4+ doping improves the work function of Nb2O5 to induce larger upward band bending at c‐Si surface, thus enhancing the hole selectivity. As a result, p‐type c‐Si solar cells with solution‐processed Nb2O5 hole‐selective contact layer have achieved the highest power conversion efficiency of 18.4%, with a high‐thermal stability superior to the typical hole transport layers. This work first demonstrates the exceptional hole selectivity of Nb2O5, which shows very promising applications in high‐efficiency c‐Si solar cells.

Low-temperature Ta-doped TiOx electron-selective contacts for high-performance silicon solar cells

Carrier-selective contacts have been widely used to reduce the recombination losses of the minority carriers and boost the transport of the majority carriers at the contact regions for high-performance crystalline silicon solar cells. In this paper, the electron-selective Ta-doped TiOx (TTO) thin films with wide bandgap were prepared by means of low-temperature atomic layer deposition (ALD) technique. The systematic examinations were conducted on the interfacial structures, elemental analysis, passivation, and electrical performance of the TTO films. The results demonstrated that ALD TTO thin films possess better surface passivation (τeff = 355.31 μs, 130 °C annealing), and excellent electrical performance (ρc = 0.7 mΩ cm2, 200 °C annealing) on c-Si, in comparison to pure TiOx and TaOx films. Benefiting from these advantages, the optimized TTO based electron-selective contact solar cell achieved a high power conversion efficiency (PCE) of 21.58 %, reaching the cutting-edge level of the wide bandgap oxide based electron-selective contact solar cells. The low-temperature, low-energy-consumption and simple ALD TTO electron-selective contacts present a promising approach for Si-based high-efficiency solar cells.

Oxygen vacancy modulation of nanolayer TiOx to improve hole-selective passivating contacts for crystalline silicon solar cells

Carrier-selective passivating contacts in crystalline silicon (c-Si) solar cells have expanded from doped silicon films to non-silicon wide-bandgap materials to reduce parasitic absorption and production costs. Titanium oxide (TiOx) has...

DLTS analysis of interface and near-interface bulk defects induced by TCO-plasma deposition in carrier-selective contact solar cells

We investigate the electrical characteristics of defects at the SiO2/Si interface, within the adjacent Si crystal, and through the depth profile of the bulk defect using three-dimensional deep-level transient spectroscopy (3D-DLTS). These defects are introduced by the reactive plasma deposition technique employed for depositing transparent conductive oxides in the fabrication of carrier-selective contact-type solar cells. To control the surface potential near the Si surface, we apply a varying voltage to obtain DLTS signals as functions of both temperature and Fermi level at the SiO2/Si interface. Using machine learning for 3D-DLTS spectral analysis, we estimate the capture cross sections, energy levels, densities, and depth profiles of these process-induced defects. The experimental results indicate the existence of three types of electron traps within the bulk defects, ranging from the interface to a depth of ∼70 nm. The electrical properties of these bulk defects suggest the presence of oxygen-related defects within Si. On the other hand, regarding the properties of interface defects, the capture cross sections and the defect densities are estimated as a function of their energy levels. They suggest that the defects at the SiO2/Si interface are likely oxygen-related PL centers.

Highly conductive p-type nc-SiOX:H thin films deposited at 130°C via efficient incorporation of plasma synthesized silicon nanocrystals and their application in SHJ solar cells

We present highly conductive and transparent p-type hydrogenated nanocrystalline silicon oxide (p-type nc-SiOX:H) layers produced by Plasma Enhanced Chemical Vapor Deposition (PECVD) at 130°C and 150°C. We report on the crystalline volume fraction (XC), spectral broadening parameter C, and dark conductivity (σ) as functions of the growth temperature and RF power, and how these properties evolve with post-deposition annealing at 250°C and 300°C. Interestingly, we observe that the best layers in terms of crystalline volume fraction and conductivity are obtained at the lowest temperature and RF power, which we attribute to the soft landing of silicon nanocrystals synthesized in the plasma. The p-type nc-SiOX:H layers with the best properties on glass substrates are implemented as carrier-selective contacts in silicon heterojunction (SHJ) solar cells with the structure: (n) a-Si:H / (i) a-Si:H / n-type c-Si / (i) a-Si:H / (i) a-SiOX:H / (p) nc-SiOX:H / (p) nc-Si:H where all films are deposited by PECVD. The cells were completed with sputtered ITO on the front and rear sides plus Ag on the rear side, and Ag grid on the front, with the best devices showing conversion efficiencies of 21.8%, which, contrary to a-Si:H contact layers, are preserved or even slightly improved upon annealing at 240°C.

Constructing tin oxides Interfacial Layer with Gradient Compositions for Efficient Perovskite/Silicon Tandem Solar Cells with Efficiency Exceeding 28.

Atomic layer deposition (ALD) growth of conformal thin SnOx films on perovskite absorbers offers a promising method to improve carrier-selective contacts, enable sputter processing, and prevent humidity ingress toward high-performance tandem perovskite solar cells. However, the interaction between perovskite materials and reactive ALD precursor limits the process parameters of ALD-SnOx film and requires an additional fullerene layer. Here, it demonstrates that reducing the water dose to deposit SnOx can reduce the degradation effect upon the perovskite underlayer while increasing the water dose to promote the oxidization can improve the electrical properties. Accordingly, a SnOx buffer layer with a gradient composition structure is designed, in which the compositionally varying are achieved by gradually increasing the oxygen source during the vapor deposition from the bottom to the top layer. In addition, the gradient SnOx structure with favorable energy funnels significantly enhances carrier extraction, further minimizing its dependence on the fullerene layer. Its broad applicability for different perovskite compositions and various textured morphology is demonstrated. Notably, the design boosts the efficiencies of perovskite/silicon tandem cells (1.0cm2) on industrially textured Czochralski (CZ) silicon to a certified efficiency of 28.0%.