Carrier Screening Effect Research Articles

Memristive switching in the surface of a charge–density–wave topological semimetal

Owing to the outstanding properties provided by nontrivial band topology, topological phases of matter are considered as a promising platform towards low-dissipation electronics, efficient spin-charge conversion, and topological quantum computation. Achieving ferroelectricity in topological materials enables the non-volatile control of the quantum states, which could greatly facilitate topological electronic research. However, ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free carriers. In this study, we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal (TaSe4)2I. We find that the surface state of (TaSe4)2I presents out-of-plane ferroelectric polarization due to surface reconstruction. With the combination of ferroelectric surface and charge-density-wave-gapped bulk states, an electric-switchable barrier height can be achieved in (TaSe4)2I-metal contact. By employing a multi-terminal-grounding design, we manage to construct a prototype ferroelectric memristor based on (TaSe4)2I with on/off ratio up to 103, endurance over 103 cycles, and good retention characteristics. The origin of the ferroelectric surface state is further investigated by first-principles calculations, which reveal an interplay between ferroelectricity and band topology. The emergence of ferroelectricity in (TaSe4)2I not only demonstrates it as a rare but essential case of ferroelectric topological materials, but also opens new routes towards the implementation of topological materials in functional electronic devices.

Layer-dependent exciton polarizability and the brightening of dark excitons in few-layer black phosphorus

The evolution of excitons from 2D to 3D is of great importance in photo-physics, yet the layer-dependent exciton polarizability hasn’t been investigated in 2D semiconductors. Here, we determine the exciton polarizabilities for 3- to 11-layer black phosphorus—a direct bandgap semiconductor regardless of the thickness—through frequency-resolved photocurrent measurements on dual-gate devices and unveil the carrier screening effect in relatively thicker samples. By taking advantage of the broadband photocurrent spectra, we are also able to reveal the exciton response for higher-index subbands under the gate electrical field. Surprisingly, dark excitons are brightened with intensity even stronger than the allowed transitions above certain electrical field. Our study not only sheds light on the exciton evolution with sample thickness, but also paves a way for optoelectronic applications of few-layer BP in modulators, tunable photodetectors, emitters and lasers.

Inversion of the Internal Electric Field due to Inhomogeneous Incorporation of Ge Dopants in GaN/AlN Heterostructures Studied by Off-Axis Electron Holography.

The engineering of the internal electric field inside III-nitride devices opens up interesting perspectives in terms of device design to boost the radiative efficiency, which is a pressing need in the ultraviolet and green-to-red spectral windows. In this context, it is of paramount importance to have access to a tool like off-axis electron holography which can accurately characterize the electrostatic potentials in semiconductor heterostructures with nanometer-scale resolution. Here, we investigate the distribution of the electrostatic potential and chemical composition in two 10-period AlN/GaN (20 nm/20 nm) multilayer samples, one of these being non-intentionally doped and the other with its GaN layers heavily doped with Ge at a nominal concentration ([Ge] = 2.0 ± 0.2 × 1021 cm-3) which is close to the solubility limit. The electron holography experiments demonstrate the effects of free carrier screening in the case of Ge doping. Furthermore, in the doped sample, an inversion of the internal electric field is observed in some of the AlN layers. A correlated study involving holography, electron dispersive X-ray spectroscopy, and theoretical calculations of the band diagram demonstrates that the perturbation of the potential can be attributed to Ge accumulation at the heterointerfaces, which paves the way to the use of Ge delta doping as a design tool to tune the electric fields in polar heterostructures.

Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening

The effect of degeneracy and the impact of free-carrier screening on a low-field mobility and a high-field drift velocity in MoS2 and WS2 are explored using an in-house ensemble Monte Carlo simulator. Electron low field mobility increases to for MoS2 and to for WS2 when temperature decreases to and carrier concentration is around . In the case of holes, best mobility values were and , reached at similar temperature and carrier concentration conditions while at room temperature these fall to and for MoS2 and WS2, respectively. The carrier screening effect plays a major role at low fields, and low and intermediate temperatures, where a combination of large occupancy of primary valleys and carrier–phonon interactions dominated by relatively low energy exchange processes results in an enhanced screening of intrinsic scattering. For electrons, degeneracy yields to transport in secondary valleys, which plays an important role in the decrease of the low field mobility at high concentrations and/or at room temperature. The high-field drift velocity is not much affected by carrier screening because of an increased carrier scattering with surface optical polar phonons, favouring larger phonon wavevector interactions with small dielectric function values.

Influence of well position on the electroluminescence characteristics of InGaN/GaN single quantum well red light-emitting diodes

In this paper, the influence of the position of InGaN layer well on the electroluminescence (EL) properties of red InGaN/GaN single quantum well (SQW) light-emitting diodes (LEDs) is investigated numerically. It is found that as the InGaN well shifts from the P-region to the N-region, the LED's EL intensity decreases, and the spectrum red-shifts. By analyzing the EL spectra, energy band structures and carrier distribution, it is considered that, when the well position moves away from the P-region, the injection barrier width of holes increases, while that of electrons decreases. Thus, the injection efficiency of electrons and holes is enhanced and weakened, respectively. Compared with electrons, the injection efficiency of holes with larger effective mass can be significantly reduced by a thicker barrier. As a result, the hole concentration in InGaN QW is reduced more severely, leading to a reduction in the total amount of carriers. The decreased concentration of injected carriers may weaken the carrier screening effect to the polarization electrical field, thereby the polarization-induced quantum confined-Stark effect is enhanced. As a consequence, for the SQW red LED whose InGaN well is far away from the P-region, the EL intensity of the SQW red LED is reduced and the peak wavelength becomes longer.

Doping dependence of the electron-phonon coupling in two families of bilayer superconducting cuprates

While electron-phonon coupling (EPC) is crucial for Cooper pairing in conventional superconductors, its role in high-$T_c$ superconducting cuprates is debated. Using resonant inelastic x-ray scattering at the oxygen $K$-edge, we studied the EPC in Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ (Bi2212) and Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-\delta}$ (NBCO) at different doping levels ranging from heavily underdoped ($p =0.07$) to overdoped ($p=0.21$). We analyze the data with a localized Lang-Firsov model that allows for the coherent excitations of two phonon modes. While electronic band dispersion effects are non-negligible, we are able to perform a study of the relative values of EPC matrix elements in these cuprate families. In the case of NBCO, the choice of the excitation energy allows us to disentangle modes related to the CuO$_3$ chains and the CuO$_2$ planes. Combining the results from the two families, we find the EPC strength decreases with doping at $\mathbf{q_\parallel}=(-0.25, 0)$ r.l.u., but has a non-monotonic trend as a function of doping at smaller momenta. This behavior is attributed to the screening effect of charge carriers. We also find that the phonon intensity is enhanced in the vicinity of the charge-density-wave (CDW) excitations while the extracted EPC strength appears to be less sensitive to their proximity. By performing a comparative study of two cuprate families, we are able to identify general trends in the EPC for the cuprates and provide experimental input to theories invoking a synergistic role for this interaction in $d$-wave pairing.

Many-body Green's function approaches to the doped Fröhlich solid: Exact solutions and anomalous mass enhancement

In polar semiconductors and insulators, the Fr\"ohlich interaction between electrons and long-wavelength longitudinal optical phonons induces a many-body renormalization of the carrier effective masses and the appearence of characteristic phonon sidebands in the spectral function, commonly dubbed 'polaron satellites'. The simplest model that captures these effects is the Fr\"ohlich model, whereby electrons in a parabolic band interact with a dispersionless longitudinal optical phonon. The Fr\"ohlich model has been employed in a number of seminal papers, from early perturbation-theory approaches to modern diagrammatic Monte Carlo calculations. One limitation of this model is that it focuses on undoped systems, thus ignoring carrier screening and Pauli blocking effects that are present in real experiments on doped samples. To overcome this limitation, we here extend the Fr\"ohlich model to the case of doped systems, and we provide exact solutions for the electron spectral function, mass enhancement, and polaron satellites. We perform the analysis using two approaches, namely Dyson's equation with the Fan-Migdal self-energy, and the second-order cumulant expansion. We find that these two approaches provide qualitatively different results. In particular, the Dyson's approach yields better quasiparticle masses and worse satellites, while the cumulant approach provides better satellite structures, at the price of worse quasiparticle masses. Both approaches yield an anomalous enhancement of the electron effective mass at finite doping levels, which in turn leads to a breakdown of the quasiparticle picture in a significant portion of the phase diagram.

Carrier screening effects on intersubband nonlinear optical rectification in wurtzite InGaN/GaN coupling quantum wells

Carrier screening effects on an optical rectification (OR) susceptibility of InGaN/GaN coupling quantum well (CQW) structures are theoretically investigated by using effective mass theory. The intersubband (ISB) transition energy E21 is shown to be strongly affected by the carrier screening. It has the value of about 0.1–0.13 eV, which is comparable to that (∼0.12 eV) observed in GaAs/AlGaAs system. The peak energy of the OR coefficient is redshifted greatly by the carrier screening effect with increasing carrier density. Also, the peak intensity of the OR coefficient rapidly increases with increasing carrier density because the OR coefficient is proportional to carrier density.

Hot carrier dynamics and electron-optical phonon coupling in photoexcited graphene via time-resolved ultrabroadband terahertz spectroscopy

Electron-electron (e-e) interaction is known as a source of logarithmic renormalizations for Dirac fermions in quantum field theory. The renormalization of electron-optical phonon coupling (EPC) by e-e interaction, which plays a pivotal role in hot carrier and phonon dynamics, has been discussed since the discovery of graphene. We investigate hot carrier dynamics and EPC strength using time-resolved ultrabroadband terahertz (THz) spectroscopy combined with numerical simulation based on the Boltzmann transport equation and a comprehensive temperature model. The numerical simulation demonstrates that the extrinsic carrier scatterings by the Coulomb potential of the charged impurity and surface polar phonons are significantly suppressed by the carrier screening effect and have negligible contributions to the THz photoconductivity in heavily doped graphene on polyethylene terephthalate (PET) substrate. The large negative photoconductivity and the non-Drude behavior of THz conductivity spectra appear under high pump fluence and can be attributed to the temporal variation of the hot carrier distribution and scattering rate. The transient reflectivity well reflects the EPC strength and temporal evolution of the hot carrier and optical phonon dynamics. We successfully estimate the EPC matrix element of the ${A}_{1}^{\ensuremath{'}}$ optical phonon mode near the $\mathbf{K}$ point as ${\ensuremath{\langle}{D}_{\mathbf{K}}^{2}\ensuremath{\rangle}}_{\mathrm{F}}\ensuremath{\approx}450$ ${(\mathrm{eV}/\AA{})}^{2}$ from the fitting of THz conductivity spectra and temporal evolution of transient THz reflectivity. The corresponding dimensionless EPC constant ${\ensuremath{\lambda}}_{\mathbf{K}}\ensuremath{\approx}0.09$ at Fermi energy ${\ensuremath{\varepsilon}}_{\mathrm{F}}=0.43\phantom{\rule{0.28em}{0ex}}\mathrm{eV}$ is slightly larger than the prediction of the renormalization group approach including the dielectric screening effect of the PET substrate. This leads to a significant difference in hot carrier and phonon dynamics compared with those without the renormalization effect by the e-e interaction. This approach can provide a quantitative understanding of hot carrier and optical phonon dynamics and support the development of future graphene optoelectronic devices.

On the mechanism of carrier recombination in downsized blue micro-LEDs

The mechanism of carrier recombination in downsized μ-LED chips from 100 × 100 to 10 × 10 μm2 on emission performance was systemically investigated. All photolithography processes for defining the μ-LED pattern were achieved by using a laser direct writing technique. This maskless technology achieved the glass-mask-free process, which not only can improve the exposure accuracy but also save the development time. The multi-functional SiO2 film as a passivation layer successfully reduced the leakage current density of μ-LED chips compared with the μ-LED chips without passivation layer. As decreasing the chip size to 10 × 10 μm2, the smallest chip size exhibited the highest ideality factor, which indicated the main carrier recombination at the high-defect-density zone in μ-LED chip leading to the decreased emission performance. The blue-shift phenomenon in the electroluminescence spectrum with decreasing the μ-LED chip size was due to the carrier screening effect and the band filling effect. The 10 × 10 μm2 μ-LED chip exhibited high EQE values in the high current density region with a less efficiency droop, and the max-EQE value was 18.8%. The luminance of 96 × 48 μ-LED array with the chip size of 20 × 20 μm2 exhibited a high value of 516 nits at the voltage of 3 V.

Intrinsic and extrinsic effects on intraband optical conductivity of hot carriers in photoexcited graphene

We present a numerical study on the intraband optical conductivity of hot carriers at quasi-equilibria in photoexcited graphene based on the semiclassical Boltzmann transport equations (BTE) with the aim of understanding the effects of intrinsic optical phonon and extrinsic coulomb scattering caused by charged impurities at the graphene--substrate interface. Instead of using full-BTE solutions, we employ iterative solutions of the BTE and the comprehensive model for the temporal evolutions of hot-carrier temperature and hot-optical-phonon occupations to reduce computational costs. Undoped graphene exhibits large positive photoconductivity owing to the increase in thermally excited carriers and the reduction in charged impurity scattering. The frequency dependencies of the photoconductivity in undoped graphene having high concentrations of charged impurities significantly deviate from those observed in the simple Drude model, which can be attributed to temporally varying charged impurity scattering during terahertz (THz) probing in the hot-carrier cooling process. Heavily doped graphene exhibits small negative photoconductivity similar to that of the Drude model. In this case, charged impurity scattering is substantially suppressed by the carrier-screening effect, and the temperature dependencies of the Drude weight and optical phonon scattering governs the negative photoconductivity. In lightly doped graphene, the appearance of negative and positive photoconductivity depends on the frequency and the crossover from negative photoconductivity to positive emerges from increasing the charged impurity concentration. This indicates the change of the dominant scattering mechanism from optical phonons to charged impurities. Our approach provides a quantitative understanding of non-Drude behaviors and the temporal evolution of photoconductivity in graphene.

Non-linear nanoscale piezoresponse of single ZnO nanowires affected by piezotronic effect

Zinc oxide (ZnO) nanowires (NWs) as semiconductor piezoelectric nanostructures have emerged as material of interest for applications in energy harvesting, photonics, sensing, biomedical science, actuators or spintronics. The expression for the piezoelectric properties in semiconductor materials is concealed by the screening effect of the available carriers and the piezotronic effect, leading to complex nanoscale piezoresponse signals. Here, we have developed a metal–semiconductor–metal model to simulate the piezoresponse of single ZnO NWs, demonstrating that the apparent non-linearity in the piezoelectric coefficient arises from the asymmetry created by the forward and reversed biased Schottky barriers at the semiconductor–metal junctions. By directly measuring the experimental I–V characteristics of ZnO NWs with conductive atomic force microscope together with the piezoelectric vertical coefficient by piezoresponse force microscopy, and comparing them with the numerical calculations for our model, effective piezoelectric coefficients in the range d 33eff ∼ 8.6 pm V−1–12.3 pm V−1 have been extracted for ZnO NWs. We have further demonstrated via simulations the dependence between the effective piezoelectric coefficient d 33eff and the geometry and physical dimensions of the NW (radius to length ratio), revealing that the higher d 33eff is obtained for thin and long NWs due to the tensor nature proportionality between electric fields and deformation in NW geometries. Moreover, the non-linearity of the piezoresponse also leads to multiharmonic electromechanical response observed at the second and higher harmonics that indeed is not restricted to piezoelectric semiconductor materials but can be generalized to any type of asymmetric voltage drops on a piezoelectric structure as well as leaky wide band-gap semiconductor ferroelectrics.

Local piezoelectric properties in Na-flux GaN bulk single crystals

The local piezoelectricity of a Na-flux GaN crystal grown on a multipoint-seed-GaN template is investigated using piezoresponse force microscopy. The piezoresponse is critically dependent on two types of growth regions that are dominantly formed in the Na-flux GaN crystal: the c-growth sector (cGS), which is grown on top of the point-seed GaN surface with a growth front of (0001) planes, and the facet-growth sector (FGS), which is grown on the side of cGS with {101¯1} facets. Quantitative analyses reveal the GaN surface displacements at cGS that result from the piezoresponses increase with the applied AC voltage: the measured values well reflect the piezoelectric constant of d33 in GaN. The piezoresponses at the FGS and the boundary between the cGS and FGS are less sensitive than that at the cGS. A combination of cathodoluminescence and multiphoton excitation photoluminescence techniques clarifies that a local reduction of the piezoresponse observed in cGS is attributed to microscale FGSs that exist randomly in cGS. The dependence of the piezoresponse on the growth regions is quantitatively discussed from three possible viewpoints that potentially affect the polarization properties of GaN: residual strain, local crystallographic tilting, and inherent carrier distribution. As a result, a carrier screening effect is the most probable candidate to induce reduction of the piezoresponse in the FGSs of GaN crystals.

Dynamics of exciton energy renormalization in monolayer transition metal disulfides

Fundamental understandings on the dynamics of charge carriers and excitonic quasiparticles in semiconductors are of central importance for both many-body physics and promising optoelectronic and photonic applications. Here, we investigated the carrier dynamics and many-body interactions in two-dimensional (2D) transition metal dichalcogenides (TMDs), using monolayer WS2 as an example, by employing femtosecond broadband pump-probe spectroscopy. Three time regimes for the exciton energy renormalization are unambiguously revealed with a distinct red-blue-red shift upon above-bandgap optical excitations. We attribute the dominant physical process in the three typical regimes to free carrier screening effect, Coulombic exciton–exciton interactions and Auger photocarrier generation, respectively, which show distinct dependence on the optical excitation wavelength, pump fluences and/or lattice temperature. An intrinsic exciton radiative lifetime of about 1.2 picoseconds (ps) in monolayer WS2 is unraveled at low temperature, and surprisingly the efficient Auger nonradiative decay of both bright and dark excitons puts the system in a nonequilibrium state at the nanosecond timescale. In addition, the dynamics of trions at low temperature is observed to be significantly different from that of excitons, e.g., a long radiative lifetime of ~ 108.7 ps at low excitation densities and the evolution of trion energy as a function of delay times. Our findings elucidate the dynamics of excitonic quasiparticles and the intricate many-body physics in 2D semiconductors, underpinning the future development of photonics, valleytronics and optoelectronics based on 2D semiconductors.

Engineering Valley Polarization of Monolayer WS2 : A Physical Doping Approach.

The emerging field of valleytronics has boosted intensive interests in investigating and controlling valley polarized light emission of monolayer transition metal dichalcogenides (1L TMDs). However, so far, the effective control of valley polarization degree in monolayer TMDs semiconductors is mostly achieved at liquid helium cryogenic temperature (4.2 K), with the requirements of high magnetic field and on-resonance laser, which are of high cost and unwelcome for applications. To overcome this obstacle, it is depicted that by electrostatic and optical doping, even at temperatures far above liquid helium cryogenic temperature (80 K) and under off-resonance laser excitation, a competitive valley polarization degree of monolayer WS2 can be achieved (more than threefold enhancement). The enhanced polarization is understood by a general doping dependent valley relaxation mechanism, which agrees well with the unified theory of carrier screening effects on intervalley scattering process. These results demonstrate that the tunability corresponds to an effective magnet field of ≈10 T at 4.2 K. This work not only serves as a reference to future valleytronic studies based on monolayer TMDs with various external or native carrier densities, but also provides an alternative approach toward enhanced polarization degree, which denotes an essential step toward practical valleytronic applications.

Interaction between in-gap states and carriers at the conductive interface between perovskite oxides

The 2D electron systems of SrTiO3/NdGaO3 (STO/NGO) and amorphous-LaAlO3/SrTiO3/NdGaO3 (a-LAO/STO/NGO) heterojunctions were explored. An obvious interaction between in-gap states (IGSs) and carriers was found. The IGSs can trap a large number of carriers and enhance carrier scattering. As a result of the high density of IGSs in STO, the conductivity of STO/NGO was severely weakened. However, for a-LAO/STO/NGO heterojunctions, the high carrier density can reduce the effect of IGSs through the electrostatic screening effect. The competition between IGSs and the screening effect of carriers results in an insulator–metal transition and a strange temperature dependence of carrier density. We also explored the interaction between IGSs and carriers theoretically. A mathematical description was proposed and the calculated results showed good agreement with experimental findings.

Influence of quantum well design on light polarization switching in AlGaN ultraviolet emitters

Polarization properties from AlGaN quantum well (QW) strongly determine the efficiency of deep ultraviolet (UV) light-emitting diodes (LEDs), hence knowing the critical Al-content at which the light polarization switches is essential for high-efficiency deep UV LED designs. This work theoretically investigates the influence of QW design on the light polarization switching in AlGaN-based UV LEDs. The physics analysis by using the self-consistent 6-band k·p model shows that the Al-content for valence subbands crossover presents an increasing trend as AlGaN QW thickness increases with consideration of polarization electric field, carrier screening effect and strain state. On the other hand, the critical Al-content where the transverse-electric-polarized spontaneous emission recombination rate (Rsp) is equal to the transverse-magnetic-polarized Rsp has the maximum value at the QW thickness of ∼1.5 nm. The difference between the two types of critical Al-contents can be explained by the quantum confined stark effect and the band mixing effect. The light polarization properties from reported AlGaN-based UV emitters show a similar trend to our theoretical results on critical Al-contents, indicating the importance on the understanding of QW design for high-efficiency deep-UV emitters.

Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors

Monolayers of transition metal dichalcogenides (TMDC) have recently emerged as excellent platforms for exploiting new physics and applications relying on electronic valley degrees of freedom in two-dimensional (2D) systems. Here, we demonstrate that Coulomb screening by 2D carriers plays a critical role in excitonic valley pseudospin relaxation processes in naturally carrier-doped WSe2 monolayers (1L-WSe2). The exciton valley relaxation times were examined using polarization- and time-resolved photoluminescence spectroscopy at temperatures ranging from 10 to 160 K. We show that the temperature-dependent exciton valley relaxation times in 1L-WSe2 under various exciton and carrier densities can be understood using a unified framework of intervalley exciton scattering via momentum-dependent long-range electron–hole exchange interactions screened by 2D carriers that depend on the carrier density and the exciton linewidth. Moreover, the developed framework was successfully applied to engineer the valley polarization of excitons in 1L-WSe2. These findings may facilitate the development of TMDC-based opto-valleytronic devices.

Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well

n-GaSb/n-InAs/p-GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V. It was shown that the photocurrent increases nonlinearly. The maximum of differential photoconductivity is archived at low applied voltage up to 0.2 V. This effect was explained by electrostatic screening of electrons localized in QW.

Enhancement of photoconductivity by carrier screening effect in n-GaSb/n-InAs/p-GaSb heterostructure with single deep quantum well

Abstractn -GaSb/ n -InAs/ p -GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V. It was shown that the photocurrent increases nonlinearly. The maximum of differential photoconductivity is archived at low applied voltage up to 0.2 V. This effect was explained by electrostatic screening of electrons localized in QW.