Carrier Relaxation Time Research Articles

Synthesis and characterization of zinc-doped hematite nanoparticles for photocatalytic applications and their electronic structure studies by density functional theory

Hematite nanoparticles doped with 1, 3 and 5 % Zn (all % are in molar) were prepared using mechanical alloying. Morphological and phase structure studies using scanning electron microscopy and X-ray diffraction showed nanoparticles possessing a semi-spherical shape and particle size of <50 nm crystallized in rhombohedral structure. The lattice parameters of hematite increased upon Zn doping. The energy-dispersive X-ray and Fourier-transform infrared results demonstrated that Zn was successfully incorporated. The optical behavior of nanoparticles was examined by UV–Vis diffuse reflectance spectroscopy and revealed that Zn doping increased the absorption intensity in the visible light region and decreased the band gap from 1.95 (hematite) to 1.83 eV (3 % Zn). Methylene blue dye degradation by the 3 % Zn sample proved doubling of the photocatalytic activity due to electronic structure modification upon Zn doping. First principles studies using density functional theory performed to investigate the effect of Zn on the electronic band structure of hematite showed that Zn doping caused band gap reduction, causing formation of new energy states, mainly above the valence band. Eventually, the enhancement of Urbach energy and reduction of effective mass, respectively accountable for increasing the relaxation time and mobility of charge carriers, were considered the two main mechanisms regarding the increased photocatalytic behavior of hematite by Zn doping.

Ultrafast Silicon/Graphene Optical Nonlinear Activator for Neuromorphic Computing

AbstractOptical neural networks (ONNs) have shown great promise in overcoming the speed and efficiency bottlenecks of artificial neural networks. However, the absence of high‐speed, energy‐efficient nonlinear activators significantly impedes the advancement of ONNs and their extension to ultrafast application scenarios like real‐time intelligent signal processing. In this work, a novel silicon/graphene ultrafast all‐optical nonlinear activator, leveraging the hybrid integration of silicon slot waveguides, plasmonic slot waveguides, and monolayer graphene is demonstrated. Exploiting the exceptional picosecond‐scale photogenerated carrier relaxation time of graphene, the response time of the activator is markedly reduced to ≈93.6 ps, establishing all‐optical activator as the fastest known in silicon photonics to knowledge. Moreover, the all‐optical nonlinear activator holds a low threshold power of 5.49 mW and a corresponding power consumption per activation of 0.51 pJ. Its feasibility and capability for use in ONNs, manifesting performance comparable with commonly used activation functions are experimentally confirmed. This breakthrough in speed and energy efficiency of all‐optical nonlinear activators opens the door to significant improvements in the performance and applicability of ONNs.

Carrier dynamic identification enables wavelength and intensity sensitivity in perovskite photodetectors

Deciphering the composite information within a light field through a single photodetector, without optical and mechanical structures, is challenging. The difficulty lies in extracting multi-dimensional optical information from a single dimension of photocurrent. Emerging photodetectors based on information reconstruction have potential, yet they only extract information contained in the photoresponse current amplitude (responsivity matrix), neglecting the hidden information in response edges driven by carrier dynamics. Herein, by adjusting the thickness of the absorption layer and the interface electric field strength in the perovskite photodiode, we extend the transport and relaxation time of carriers excited by photons of different wavelengths, maximizing the spectrum richness of the edge waveform in the light-dark transition process. For the first time, without the need for extra optical and electrical components, the reconstruction of two-dimensional information of light intensity and wavelength has been achieved. With the integration of machine learning algorithms into waveform data analysis, a wide operation spectrum range of 350–750 nm is available with a 100% accuracy rate. The restoration error has been lowered to less than 0.1% for light intensity. This work offers valuable insights for advancing perovskite applications in areas such as wavelength identification and spectrum imaging.

Magnetic field-dependent thermopower: Insights into spin and quantum interactions

This study explores the impact of external magnetic fields on thermoelectric properties, focusing on the interplay of spin and quantum effects. Using gadolinium (Gd) as a case study, we observed anomalous magneto-thermopower trends, with a reduction in thermopower at ∼35 K and an enhancement at TC ≈ 293 K under high magnetic fields. Comprehensive temperature and field-dependent measurements, including specific heat capacity, magnetic susceptibility, and Hall effect, were performed to uncover the underlying mechanisms. We derived a relation for the total thermopower of an uncompensated ferromagnetic metal and calculated multi-band carrier characteristics, such as concentration and mobility, using the maximum entropy principle. Our findings reveal a ∼70 % suppression of the magnetic contribution to specific heat capacity under a 12 T field and a positive magnon-drag contribution to the total thermopower. Field-dependent Hall measurements indicate that the anomalous Hall effect is dominated by intrinsic contributions from Berry curvature. Additionally, transverse magnetoresistance data suggest anisotropic Fermi surfaces, domain movement, suppression of spin-flip effects, and Fermi surface modifications. First-principles calculations based on Density Functional Theory (DFT) further support these findings. These calculations reveal significant Berry curvature contributions, leading to an anomalous Hall conductivity of approximately 1260 S/cm at the Fermi level. The enhancement of thermopower near TC is primarily attributed to the suppression of magnon-drag and the imbalance in carrier mobility and relaxation times, driven by spin and quantum effects. These combined effects result in a ∼50 % increase in thermopower and a ∼150 % improvement in zT at 12 T. The notable peak in zT at cryogenic temperatures highlights a potential pathway for designing efficient thermoelectric materials for cryogenic cooling applications. Our results demonstrate the significance of field-dependent spin and quantum effects in enhancing thermoelectric performance, offering new directions for thermoelectric research and material design.

Copper Functionalized SnSe Nanoflakes Enabling Nonlinear Optical Features for Ultrafast Photonics.

This study enhances the ultrafast photonics application of tin selenide (SnSe) nanoflakes via copper (Cu) functionalization to overcome challenges such as low conductivity and weak near-infrared (NIR) absorption. Cu functionalization enhances concentration, induces strain, and reduces the bandgap through Sn substitution and Sn vacancy filling with Cu ions. Demonstrated by density functional theory calculations and experimental analyses, Cu-functionalized SnSe exhibits improved NIR optical absorption and superior third-order nonlinear optical properties. Z-scan measurements and femtosecond transient absorption spectroscopy reveal better performance of Cu-functionalized SnSe in terms of nonlinear optical properties and shorter carrier relaxation times compared to pristine SnSe. Furthermore, saturable absorbers based on both SnSe types, when integrated into an erbium-doped fiber laser, show that Cu functionalization leads to a decrease in pulse duration to 798 fs and an increase in 3dB spectral bandwidth to 3.44nm. Additionally, it enables stable harmonic mode-locking of bound-state solitons. This work suggests a new direction for improving wide bandgap 2D materials by highlighting the enhanced nonlinear optical propertiesand potential of Cu-functionalized SnSe in ultrafast photonics.

High In-Plane Thermoelectric Performance of Layered Bi4O4SeCl2.

The van der Waals semiconductor Bi4O4SeCl2 has recently attracted great interest due to its extremely small lattice thermal conductivity, which may find possible application in the field of energy conversion. Herein, we accurately predict the thermoelectric transport properties of Bi4O4SeCl2 using first-principles calculations and Boltzmann transport theory, where the carrier relaxation time is obtained by fully considering the electron-phonon coupling. It is found that a maximum p-type ZT value of 3.1 can be reached at 1100 K along the in-plane direction, which originates from increased Seebeck coefficient induced by multivalley band structure, as well as enhanced electrical conductivity caused by relatively stronger intralayer bonding. Besides, it is interesting to note that comparable p- and n-type ZT values can be realized in certain temperature regions, which is very desirable in the fabrication of thermoelectric modules.

Low lattice thermal conductivity induced by interlayer anharmonicity in p-type BaFZnAs compound with high thermoelectric performance

Inspired by the excellent thermoelectric (TE) performance of ZrSiCuAs-type materials, the crystal structure, thermal and electronic transport mechanisms, and TE properties of the BaFZnAs compound are explored using first-principles calculations and Boltzmann transport theory. The BaFZnAs compound is an anisotropic material, with a direct bandgap of 1.20 eV determined by the Heyd-Scuseria-Ernzerhof (HSE06) functional. The [Zn2As2]2- layer within BaFZnAs compound forms carrier transport channel, which is beneficial for high power factor. The strong out-of-plane interlayer anharmonicity of the [Ba2F2]2+ and [Zn2As2]2- layers with weak interactions leads to a low lattice thermal conductivity (1.64 W/mK at 300 K) for the BaFZnAs compound. Based on the carrier relaxation time evaluated in the consideration of multiple carrier scattering rates and electronic transport parameters, the optimal ZTs of 1.44 and 2.06 are achieved for n-type and p-type BaFZnAs compounds at 900 K, associating with the corresponding ZTs of 2.10 (0.72) and 2.64 (0.51) along the a-axis and c-axis directions. Our present work not only offers multifaceted insights into the thermal and electronic transport properties of BaFZnAs compound, but also provides a new inspiration for further TE exploration of ZrSiCuAs-type materials.

Ultrafast carrier dynamics and nonlinear optical absorption of two-dimensional NiPS3 nanosheets

Two-dimensional (2D) materials have been extensively explored for various optoelectronic devices, showing tremendous application potential. Metal phosphorus trichalcogenide compounds are new intrinsic magnetic semiconductor materials that possess unique and excellent physical and optical properties. Among them, NiPS3 has a bandgap of 1.6 eV and is an intrinsic antiferromagnetic semiconductor. In our work, the nonlinear optical absorption and carrier dynamics of 2D NiPS3 nanosheets are studied by the I-scan system and time-resolved transient transmission spectroscopy. The thickness-dependent carrier relaxation time is obtained utilizing the pump-probe technique. The strong dependence of slow relaxation time on incident intensity is also reflected in the thick sample, which distinguishes the lattice thermal diffusion in 2D nanosheets from that of bulk. The saturation absorption and two-photon absorption coefficients are further achieved. Our results provide a perspective for the applications of NiPS3 nanosheets in optical devices such as micro saturable absorbers and on-chip ultrafast optical switches.

Alloying effects on the transport properties of refractory high-entropy alloys

Additive Manufacturing (AM) has opened new frontiers for the design of refractory high-entropy alloys (HEAs) for high-temperature applications. The thermal conductivity of the AM feedstock is among the most important thermo-physical properties that control the melting and solidification process. Despite its significance, there remains a notable gap in both computational and experimental research concerning the thermal conductivity of HEAs. Here, we use density functional theory (DFT) to systematically investigate the alloying effects on the transport properties of Ti-Cr-Mo-W-V-Nb-Ta RHEAs, including electrical and thermal conductivities and Seebeck coefficient. The relaxation time of charge carriers is a key underlying parameter determining thermal conductivity that is exceedingly challenging to predict from first principles alone, and we thus follow the approach by Mukherjee, Satsangi, and Singh [Chem Mater 32, 6507 (2022)] to optimize the relaxation time for RHEAs. We validated thermal conductivity predictions on elemental solids, binary and ternary alloys, and RHEAs and compared them against thermodynamic (CALPHAD) predictions and our experiments with good correlations. To understand observed trends in thermal conductivity, we assessed the phase stability, electronic structure, phonon, and intrinsic- and tensile strength of down-selected RHEAs. Our electronic structure and phonon results connect well with the observed compositional trends for thermal transport in RHEAs. Our DFT assessment and CALPHAD predictions provide a unique design guide for RHEAs with tailored thermal conductivity, a critical consideration for AM and thermal-management applications.

Thermoelectric properties of monolayer and bilayer di boron nitride (di BN)

Motivated by the diverse uses of 2D materials in the modern technologies, we explore the temperature dependent thermoelectric properties of monolayer and bilayer di boron nitride. These materials are not still synthesized therefore the formation energy for monolayer and binding energy for bilayer is computed indicating the thermodynamical stability of both systems. The monolayer has a moderate direct band gap of 1.71 eV, while the bilayer possesses a band gap of 0.99 eV. The Seebeck coefficient has no substantial thickness and directional dependency. The Seebeck coefficient for bilayer decreases more as compare to monolayer with increasing temperature and at 600 K it decreases more than 1.7 times as compared to monolayer. However, the bilayer system has a longer carrier relaxation time than the monolayer system. Besides, the p-type relaxation in the ZZ-direction is longer than the n-type for both monolayer and bilayer systems. Consequently, the electrical and electronic thermal conductivities are two times larger in bilayer system. Here, p-type doping system have higher magnitude of electrical and electronic thermal conductivities than n-type doping system. The bilayer system has a greater lattice thermal conductivity than the monolayer. As results, we obtain that the maximum ZT of 0.8 in the bilayer system while the monolayer has a maximum ZT of 0.36 at 600 K with hole doping.

Nernst Effect of High-Mobility Weyl Electrons in NdAlSi Enhanced by a Fermi Surface Nesting Instability

The thermoelectric Nernst effect of solids converts heat flow to beneficial electronic voltages. Here, using a correlated topological semimetal with high carrier mobility μ in the presence of magnetic fluctuations, we demonstrate an enhancement of the Nernst effect close to a magnetic phase transition. A magnetic instability in NdAlSi modifies the carrier relaxation time on “hot spots” in momentum space, causing a strong band filling dependence of μ. We quantitatively derive electronic band parameters from a novel two-band analysis of the Nernst effect Sxy, in good agreement with quantum oscillation measurements and band calculations. While the Nernst response of NdAlSi behaves much like conventional semimetals at high temperatures, an additional contribution ΔSxy from electronic correlations appears just above the magnetic transition. Our work demonstrates the engineering of the relaxation time, or the momentum-dependent self-energy, to generate a large Nernst response independent of a material’s carrier density, i.e., for metals, semimetals, and semiconductors with large μ. Published by the American Physical Society 2024

Mechanical and thermoelectric response of 18-valence electron half-Heusler tellurides XFeTe (X=Ti, Hf): A theoretical perspective

To address growing global energy needs, half Heusler compounds offer a cost-effective and efficient solution for power generation applications. We present a study on the structural, electronic, magnetic, phonon, mechanical and thermoelectric (TE) properties of two hH tellurides, XFeTe (X= Ti, Hf) with 18 valence electrons. The investigation employs Density functional theory (DFT), Semi-classical Boltzmann transport equations (BTE), Quasi-harmonic approximation (QHA), Density functional perturbation theory (DFPT) and Deformation potential theory (DPT). The equilibrium lattice constants are determined to be 5.882 Å and 6.041 Å for TiFeTe and HfFeTe respectively. The electronic structures of TiFeTe and HfFeTe are modeled with generalised gradient approximation (GGA), revealing indirect band gaps of 0.93 eV and 0.79 eV, respectively. The conduction bands in TiFeTe and HfFeTe exhibit remarkably low effective masses of 0.72 me and 0.61 me, respectively, resulting in higher carrier relaxation times. The compounds are dynamically and mechanically stable. TiFeTe is ductile whereas HfFeTe is brittle. The elastic constants analysis suggests that these compounds exhibit stiffness, better hardness, elastic anisotropy and high melting point. TE parameters are investigated across a temperature range from 400 K to 1200 K. At room temperature, TiFeTe and HfFeTe exhibit lattice thermal conductivities of 25.43 Wm−1K−1 and 29.29 Wm−1K−1, respectively. At 1200 K, zT for the n-type, p-type compositions are 1.79, 1.11 for TiFeTe and 1.35, 1.06 for HfFeTe, respectively. The n-type composition not only exhibits superior TE performance compared to the p-type but also shows the peak zT at more feasible doping levels.

Structural, Optical and Optoelectrical Properties of CuAlSnS4 Thin Films

The present study used chemical deposition to deposit thin copper aluminum tin sulfide (CATS4) layers onto clean glass substrates. X-ray diffraction analysis was utilized to explore the crystalline structure of the CATS4 films, which refers to the CATS4 films having a cubic crystal structure. Energy-dispersive X-ray analysis showed the presence of Cu, Al, Sn, and S peaks in the CATS4 films, and their atomic ratio is close to 1:1:1:4. Spectrophotometric measurements of optical transmittance and reflectance spanning the 400–2500 nm spectral range were performed to describe the optical properties of the CATS4 layers. The CATS4 films demonstrated a direct energy gap transition between 1.42 and 1.31 eV. Further, increasing the layer thickness enhanced the refractive index and Urbach energy of the CATS4 films. The inspected CATS4 films showed better optoelectrical properties with increasing thickness, including improved optical conductivity, optical resistivity, optical carrier concentration, relaxation time, and optical mobility. Increasing the thickness of the CATS4 films increased their nonlinear optical indices. Additionally, the hot probe apparatus verified the p-type semiconducting characteristics of CATS4 films.

Effect of magnetic field on impedance characteristics in manganese sulfide Mn0.9S

Manganese sulfide with a lack of manganese cations in the lattice is being studied. Samples that are single-phase and have a cubic structure have been certified. The impedance components were measured over a wide range of frequencies and temperatures without a magnetic field and in a magnetic field. The real and imaginary parts of the impedance as a function of temperature are described in the Debye model. The relaxation time of current carriers is found from the impedance hodograph. The change in impedance components in a magnetic field is described in a model of an inhomogeneous electrical medium.

Temperature-dependent ultrafast hot carrier dynamics in the dilute bismide alloy GaSb1−xBix (x ≾ 0.4%)

We report temperature-dependent hot carrier dynamics in liquid-phase epitaxy-grown GaSb1−xBix epilayers with dilute amounts of Bi (x ≾ 0.4%). Degenerate pump–probe (λ = 800 nm) transient reflectivity (PPTR) was used to investigate the carrier dynamics in the epilayers. The PPTR signal consists of two transient processes (fast and slow) at all temperatures for all epilayers. The fast, hot carrier relaxation time, which is attributed to the combined effect of intervalley scattering and thermalization of carriers below cryogenic temperatures (&amp;lt;100 K), is observed to increase with an increase in temperature (≈0.8–2 ps at 6.6 K and ≈4–5 ps at 300 K). However, at higher temperatures (&amp;gt;100 K), the interband CHSH-Auger recombination process affects the band-to-band recombination, leading to an increase in the slower decay time. The findings offer crucial insights for optimizing GaSbBi for hot carrier solar cell applications.

Carrier transport in bulk and two-dimensional Zn2(V,Nb,Ta)N3 ternary nitrides.

Density functional theory-based simulations are applied to study the electronic structures, carrier masses, carrier mobility and carrier relaxation times in bulk and two-dimensional (2D) Zn2(V,Nb,Ta)N3 ternary nitrides. Bulk Zn2(V,Nb,Ta)N3 possess moderate band gap sizes of 2.17 eV, 3.11 eV, and 3.40 eV, respectively. Two-dimensional Zn2(V,Nb,Ta)N3 have slightly higher band gap sizes of 2.77 eV, 3.33 eV, and 3.23 eV, respectively. Carrier mass, carrier mobility and carrier relaxation time are found to be anisotropic in all the studied structures. Bulk and 2D samples show an order of magnitude higher electron mobility compared to hole mobility. The highest electron mobility in bulk Zn2NbN3 and Zn2TaN3 is about ∼103 cm2 V-1 s-1. Importantly, for 2D Zn2NbN3, an abnormally high electron mobility of 1.67 × 104 cm2 V-1 s-1 is observed, which is not inferior to the highest known electron mobility values in 2D materials. Such a high electron mobility in 2D Zn2NbN3 can be attributed to a strong delocalization of the conduction band minimum, which is responsible for electron transport. Therefore, this work opens up new materials for high performance nanodevices, such as tandem solar cells and field-effect transistors. This study also provides deep physical insights into the nature of carrier transport mechanisms in bulk and 2D Zn2(V,Nb,Ta)N3 ternary nitrides.

A van der Waals p-n heterostructure of GaSe/SnS2: a high thermoelectric figure of merit and strong anisotropy.

In recent years, van der Waals heterostructures (vdWHs) with controllable and peculiar properties have attracted extensive attention in the fields of electronics, optoelectronics, spintronics and electrochemistry. However, vdWHs with good thermoelectric performance are few due to the complex coupling of thermoelectric coefficients. Here, we employ density functional theory and Boltzmann's transport equation to explore the thermoelectric properties of the p-n vdWH of GaSe/SnS2, which has been experimentally observed to exhibit high performance as an optoelectronic device. We reveal that GaSe/SnS2 possesses strong anisotropy in terms of electronic transport resulting from the anisotropic carrier relaxation time. The longer carrier relaxation time in the y-direction for n-type induces a high power factor of 0.084 W m-1 K-2 at 300 K, while it is only 0.0087 W m-1 K-2) in the x-direction. The strong coupling of low-mid frequency phonon branches and the relatively weak Sn-S bond-induced anharmonicity hinder the phonon transport, which results in the lattice thermal conductivity of GaSe/SnS2 (14.61 and 15.43 W m-1 K-1 along the x- and y-directions at 300 K) being much smaller than the average value of GaSe and SnS2 (43.44 W m-1 K-1 at 300 K). The optimal thermoelectric figure of merit at 700 K for GaSe/SnS2 reaches 2.99, which is significantly higher than those of the constituents of GaSe (0.58) and SnS2 (1.04). The present work highlights the potential thermoelectric applications and the understanding of the thermoelectric transport mechanism for the recently synthesized p-n vdWH of GaSe/SnS2 with a high thermoelectric figure of merit and strong anisotropy.

Ultrafast magneto-optical dynamics in nickel (111) single crystal studied by the integration of ultrafast reflectivity and polarimetry probes

With the integration of ultrafast reflectivity and polarimetry probes, we observed carrier relaxation and spin dynamics induced by ultrafast laser excitation of Ni (111) single crystals. The carrier relaxation time within the linear excitation range reveals that electron–phonon coupling and dissipation of photon energy into the bulk of the crystal take tens of picoseconds. On the other hand, the observed spin dynamics indicate a longer time of about 120 ps. To further understand how the lattice degree of freedom is coupled with these dynamics may require the integration of an ultrafast diffraction probe.

ОПТИЧНА СПЕКТРОСКОПІЯ ДЕТЕКТОРНИХ ВИСОКООМНИХ МОНОКРИСТАЛІВ CdTe (111) ТА ТВЕРДИХ РОЗЧИНІВ Cd 1-x Zn x Te (х= 0,1)

Cadmium telluride is used for the manufacture of uncooled gamma radiation detectors, and solid solutions of Cd 1-x Zn x Te (x=0.1) are used for the manufacture of X-ray and gamma radiation detectors. The study of the effect of doping on the physical properties of semiconductors is relevant both for experimenters and for the theoretical substantiation of physical processes. This paper presents the results of the study of optical reflection spectra in the spectral range (0,2-1,7) . 10 -6 m and transmittance in the region of the fundamental optical transition E 0 of high-resistivity CdTe single crystals of (111) orientation with resistivity ρ = (2÷5)·10 9 Ohm∙cm doped with chlorine, as well as solid solutions of Cd 1-x Zn x Te (x = 0.1) with resistivity ρ = (5 ÷30)∙10 9 Ohm∙cm. Since the optical reflection coefficient R = f (λ) is related to the optical transmittance T = f (λ) and absorption D = f (λ) by the ratio R+T+D=1 (with the light (electromagnetic) wave scattering in the studied samples not taken into account), the absorption spectra D=1-(R+T) versus the light (electromagnetic) wavelength λ were also constructed in this work. It is determined that the energy of the fundamental optical transition E 0 of the studied materials at T = 300 K is as follows: for CdTe - 1.44 eV; and for Cd 1-х Zn х Te (x = 0.1) - 1.5 eV. The energy relaxation time of free charge carriers τ for p-CdTe (111) single crystals and Cd 1-х Zn х Te (x = 0.1) solid solutions was estimated to be 1.343-10 -14 s and 0,878·10 -14 s, respectively. The effective "optical" mobility for single crystals of p-CdTe (111) and solid solutions of Cd 1-х Zn х Te (x = 0.1) is 274 . 10 -4 ; 179,5 . 10 -4 , respectively. It has been shown that the investigated crystals are of high (detector) quality, which is crucial for the manufacture of highly sensitive and high-resolution ionising radiation sensors. The practical value of the obtained results lies in the determination of electronic and physical parameters of technically important semiconductors CdTe and Cd 1-х Zn х Te (x=0.1).

Influence of neutron irradiation on the electronic properties of hexagonal boron nitride measured by terahertz time-domain spectroscopy

Due to the low atomic number of B, hexagonal boron nitride (hBN) has a large neutron scattering cross section and, therefore, is an ideal material for the realization of solid-state neutron detector. Here we apply the THz time-domain spectroscopy to study the effect of neutron irradiation on electronic properties of pyrolytic (PBN) and hot-pressed boron nitride (HBN). The key electronic parameters of these samples, such as the static dielectric constant ε b , the effective carrier density N*, the carrier relaxation time τ, and the electronic localization factor α, are determined optically, and their dependences upon the neutron irradiation fluence (NIF) are examined. We find that for hBN,N* and ε b decrease while τ and |α| increase with increasing NIF. These results can be used to further understand the neutron irradiation effects on the basic physical properties of hBN material. We believe that the results obtained from this work can benefit to the design and application of hBN material for neutron detectors.