Carrier Lifetime Research Articles

Quantitative photothermal investigation of nonradiative recombination parameters in GaAs/InAs(QD)/GaAs quantum dot structures using a three-layer laser beam deflection model

In this paper, we developed a theoretical model for the photothermal deflection technique in order to investigate the electronic parameters of three-layer semiconductor structures. This model is based on the resolution of thermal and photogenerated carrier diffusion-wave equations in different media. Theoretical results show that the amplitude and phase of the photothermal deflection signal is very sensitive to the nonradiative recombination parameters. The theoretical model is applied to one layer of InAs quantum dots (QDs) inserted in GaAs matrix InAs/GaAs QDs in order to investigate the QD density effects on nonradiative recombination parameters in InAs through fitting the theoretical photothermal beam deflection signal to the experimental data. It was found that the minority carrier lifetime and the electronic diffusivity decrease as functions of increasing InAs QD density. This result is also related to the decrease in the mobility from 21.58 to 4.17 (±12.9%) cm2/V s and the minority carrier diffusion length from 0.62 (±5.8%) to 0.14 (±10%) μm, respectively. Furthermore, both interface recombination velocities S2/3 of GaAs/InAs (QDs) and S1/2 of InAs (QDs)/GaAs increase from 477.7 (±6.2%) to 806.5 (±4%) cm/s and from 75 (±7.8%) to 148.1 (±5.5%) cm/s, respectively.

Proximity-Induced Exchange Interaction and Prolonged Valley Lifetime in MoSe2/CrSBr Van-Der-Waals Heterostructure with Orthogonal Spin Textures.

Heterostructures, composed of semiconducting transition-metal dichalcogenides (TMDC) and magnetic van-der-Waals materials, offer exciting prospects for the manipulation of the TMDC valley properties via proximity interaction with the magnetic material. We show that the atomic proximity of monolayer MoSe2 and the antiferromagnetic van-der-Waals crystal CrSBr leads to an unexpected breaking of time-reversal symmetry, with originally perpendicular spin directions in both materials. The observed effect can be traced back to a proximity-induced exchange interaction via first-principles calculations. The resulting spin splitting in MoSe2 is determined experimentally and theoretically to be on the order of a few meV. Moreover, we find a more than 2 orders of magnitude longer valley lifetime of spin-polarized charge carriers in the heterostructure, as compared to monolayer MoSe2/SiO2, driven by a Mott transition in the type-III band-aligned heterostructure.

Simple Smoothing of the Bottom Silicon Surface Using Wet Chemical Etching Methods for Epitaxial III‐V/Silicon Tandem Manufacturing

The implementation of diverse technologies has recently facilitated the production of cost‐effective and highly efficient solar cells. High‐efficiency solar cells with III‐V compounds tandem crystalline silicon cells have achieved photovoltaic efficiency of higher than 39%. Etching silicon wafers plays a vital role in the deposition of epitaxial layers, neutralizing dangling bonds, and surface passivation for tandem solar cells. The wafers are polished using a solution of HF–HNO3–CH3COOH (HNA) and 20% KOH to smoothen the wafer surface. When HNA wet etching is performed for 3.5 min and the 20% KOH etching lasts for 6 min, the microroughness of the wafer is 1.9 nm with a measurement area of 10 × 10 μm2 and 0.816 nm within an area of 1 × 1 μm2. Compared with the as‐cut wafer, the reflectance increases from 31.7% to 34.7%, and the effective minority carrier lifetime, with 30 nm Al2O3 passivation after 450 °C activated, increases from 1.4 to 1.8 ms in a carrier density of 1.0 × 1015 cm−3.

As‐Doped Polycrystalline CdSeTe: Localized Defects, Carrier Mobility and Lifetimes, and Impact on High‐Efficiency Solar Cells

AbstractThe efficiency potential for single‐junction photovoltaics (PV) is described by the detailed balance model, which requires the elimination of nonradiative recombination and perfect minority carrier collection. Improvements in GaAs, Si, and perovskite PV follow this model. It might be more complex for CdTe, a leading thin‐film PV technology. While lifetime, passivation, and doping goals for 25% efficient CdTe solar cells are largely reached, voltage is ≈20% below the detailed balance limit. Why is that? In Se‐alloyed CdSexTe1‐x (Se is required for >20% efficiency) additional losses can occur due to electrostatic and bandgap fluctuations and due to electronic trap states. To understand mechanisms limiting CdSeTe solar cell performance and to suggest improvements, carrier dynamics, and transport in CdSexTe1‐x with variation in Se composition and as doping is analyzed. It is shown that trapping, likely due to anion‐site defects and their complexes, is correlated with low charge carrier mobility of 0.1–0.6 cm2 (Vs)−1. Even with 1000 ns charge carrier lifetimes, carrier diffusion length is less than the absorber thickness, reducing efficiency to ≈23%. Device simulations are used to analyze the performance of CdSexTe1‐x solar cells; thermodynamic models are not sufficient for absorbers with electronic disorder and trapping.

Interface properties study of black silicon solar cells with front surface a-Si:H/c-Si heterojunction

Abstract The exceptionally low reflectance of black silicon across a broad wavelength range makes it an intriguing surface texture for solar cell applications. Silicon heterojunction (SHJ) solar cells fabricated on black silicon (Si) formed by dry reactive ion etching (RIE) using inductive coupled plasma (ICP) on n-type Si are explored. The study is focused on the properties of the a-Si:H/c-Si interface, being a key issue for the photovoltaic performance of SHJ. Deep-level transient spectroscopy (DLTS) detected no radiation defect in Si after the etching. The surface of black Si was passivated with an intrinsic a-Si:H layer, followed by the deposition of p-type and n-type a-Si:H on the front and back sides, respectively. The SHJ solar cell photovoltaic performance based on black Si is strongly influenced by defect density at the a-Si:H/Si interface. Admittance spectroscopy and effective charge carrier lifetime measurements demonstrate that interface defect density decreases with the increase of (i)a-Si:H thickness. The value of 0.75 ms effective charge carrier lifetime was reached for single (i) a-Si:H layer passivation and 0.25 ms when (p)a-Si:H was deposited over the intrinsic a-Si:H layer. The measured open circuit voltage (VOC) values for the SHJ solar cells increase with the (i)a-Si:H layer thickness reaching 658 mV. However, the fill factor decreases with increasing (i) a-Si:H layer thickness, limiting the efficiency at the maximum value below 14% due to the thickness uniformity of the a-Si:H layer. The development of conformal growth of a-Si:H is a key issue for further improvement of black Si heterojunction solar cell photovoltaic performance. 

Hole diffusion length and mobility of a long wavelength infrared InAs/InAsSb type-II superlattice nBn design

We demonstrated high-performance 8.9 μm cutoff wavelength nBn InAs/InAsSb type-II strained-layer superlattice (T2SL). These detectors exhibit a long minority carrier (hole) lifetime of 1.2 μs at 80 K, high quantum efficiency of 40% for back-side illuminated devices without antireflection coating, and low dark current density of 4.6 × 10−6 A/cm2 at 80 K. We measured absorption, minority carrier (hole) lifetime, quantum efficiency, and spectral response as a function of the temperature and applied bias. We investigated the temperature dependence of the hole diffusion length and mobility and found that their values increase with temperature from 1.3 μm and 6.5 cm2/Vs at 30 K to 6.5 μm and 36 cm2/Vs at T = 90 K. We compared the measured diffusion length and mobility of holes in long-wavelength infrared (LWIR) T2SL with these parameters of a high-performance mid-wavelength infrared (MWIR) T2SL. Unexpectedly, hole mobility in LWIR T2SL was found to be higher than in MWIR that is contrary to the theoretical predictions.

Highly Polarization‐Sensitive Solar‐Blind Ultraviolet Photodetection Based on 1D Rb2CuCl3 Microwires

AbstractPolarization‐sensitive solar‐blind ultraviolet (UV) photodetectors are essential in both civilian and military applications. 1D perovskites derivative Rb2CuCl3 holds promise for polarization‐sensitive solar‐blind UV photodetectors due to its wide direct bandgap, anisotropic crystal structure, and long carrier lifetime. However, no studies on the polarization properties of Rb2CuCl3 are reported. Here, the electronic structural anisotropy of Rb2CuCl3 is confirmed by calculating the partial charge density distribution in the ac‐plane and bc‐plane. Then, the Raman‐active modes and corresponding atomic vibration modes are explored within the bc‐plane through joint experimental and theoretical Raman spectroscopy. Besides, angle‐resolved Raman, photoluminescence, and absorption spectroscopy reveal the intriguing anisotropic photoelectric characteristics of Rb2CuCl3 microwires (MWs). By using single Rb2CuCl3 MW as the photoactive layer, a polarization‐sensitive solar‐blind UV photodetector is fabricated, showing high photoresponsivity of 78 mA W−1 and photocurrent anisotropy ratio of ≈1.7 at 265 nm. Importantly, the proposed photodetectors without encapsulation exhibit excellent stability in ambient air, retaining the original photocurrent after two months, showcasing practical applicability. This study underscores the promise of Rb2CuCl3 for high‐performance polarization‐sensitive solar‐blind UV photodetectors, contributing valuable insights into its electronic structure, photoelectric properties, and practical applicability.

Selection of efficient HTL for lead-free Cs2TiBr6-based PSC with relative permittivity, & carrier life time optimization: a theoretical study

Selection of efficient HTL for lead-free Cs2TiBr6-based PSC with relative permittivity, & carrier life time optimization: a theoretical study

Rationally designed photothermal-pyroelectric Fe0.9Ni0.1S2/ZnSnO3 Z-scheme heterojunction for promoting electrical charge polarization towards optimized photocatalytic H2 evolution and intermolecular N-N coupling reaction

Developing a photocatalytic composite system that can couple hydrogen (H2) evolution and benzylamine (BA) oxidation is a challenging task, especially while avoiding sacrificial agents and value-added chemicals. Here, a practical approach is reported to develop a photothermal-pyroelectric-Fe0.9Ni0.1S2/ZnSnO3 photocatalytic system with core–shell and Z-scheme heterostructure via hydrothermal and annealing methods. Although Fe0.9Ni0.1S2 nanoparticles (NPs) could convert most of near-infrared (NIR) light energy into heat energy to drive the pyroelectric effect of ZnSnO3, it also results in temperature fluctuations (ΔT) in the system, causing natural polarization and thermoelectric effects under the condensed water circulation. As a result, the as-designed Fe0.9Ni0.1S2/ZnSnO3-2 composites could yield up to 7.194 mmol g-1h−1 with exceptional photocatalytic H2 evolution under simulated sunlight. This result is 5.41 and 4.92-fold those of Fe0.9Ni0.1S2 and ZnSnO3, respectively, with 16.66 % apparent quantum yield (AQY) under 365 nm monochromatic light. At the same time, the composites could also oxidize BA and yield up to 6.640 mmol g-1h-1n-benzylidene benzylamine (NBBA) with a 90.2 % selectivity. Due to the synergistic effect of Z-scheme’s built-in electric field and photothermal-pyroelectric of Fe0.9Ni0.1S2/ZnSnO3, the surface charges released on them could direct the charge transfer pathways and restrain their recombination with accelerated electron transfer kinetics, thus extending the carrier lifetime. This work offers a new perspective for designing electrical charge polarized by the photothermal-pyroelectric effect, which can enhance H2 evolution and BA oxidation concurrently.

In Situ Crystal Growth and Fusing-Confined Engineering of Quasi-Monocrystalline Perovskite Thick Junctions for X-ray Detection and Imaging.

Metal halide perovskites exhibit great promise for utilization in X-ray detection owing to their excellent optoelectronic properties and high X-ray attenuation capabilities. However, fabricating large-area thick films for high-performance perovskite X-ray detection remains challenging. This study develops an in situ crystal growth and fusing-confined approach to prepare high-quality, large-scale perovskite quasi-monocrystalline thick junctions. The perovskite crystals are grown in situ using a highly concentrated perovskite colloidal solution in 2-methoxyethanol. Introducing methylammonium chloride enhances grain reorganization during in situ growth and fusing-confined processes, effectively reducing grain boundaries and surface defects. This allows for the preparation of quasi-monocrystalline thick junctions of large grains (>100 μm) with high crystallinity, uniform orientation, and vertical penetration across the film thickness. Additionally, the carrier mobility and lifetime of the thick junctions are significantly enhanced. The optimized MAPbI3 detectors demonstrate an X-ray sensitivity of 2.6 × 104 μC Gyair-1 cm-2 and an exceptionally low detection limit of 1 nGyair s-1. Furthermore, inspired by a honeycomb structure, these detectors realize X-ray imaging in 64 × 64 pixels through a pixelated separation design, effectively reducing the charge-sharing effect. This study offers valuable insights into the preparation of large-scale perovskite quasi-monocrystalline thick junctions for highly sensitive X-ray detection and imaging applications.

Simulation of the functionality of ZnO, TiO2 and Ta2O5, and MoO2 carrier selective contacts of GaAs0.99Bi0.01 nanowire-based solar cells

Abstract Photovoltaic performance of perpendicularly aligned GaAs0.99Bi0.01/CSC/ITO core-shell nanowire solar cell is thoroughly investigated in this simulation based theoretical study for both electron selective contact (ESC) and hole selective contact (HSC) as carrier selective contact (CSC) shell around GaAs0.99Bi0.01 core nanowire. The overall performance has been compared with radial PiN doped GaAs0.99Bi0.01 NWSC to mark the improvement caused by carrier selectivity. ZnO, TiO2, and Ta2O5 materials have been chosen as ESC material and MoO2 is chosen as HSC material in order to carry out this comparative study. We have thoroughly performed geometry optimization test over a wide range of periods in order to select the optimized ITO (Indium Tin Oxide) thickness for obtaining maximum photo current generation. The maximum short circuit photo current density (Jsc) of 38.76 mA/cm2 is obtained with ZnO coated nanowire solar cell (NWSC) for a pitch (P) of 400 nm and ITO shell thickness of 90 nm. For this optimized geometry, TiO2, Ta2O5 and MoO2 coated structures offered Jsc of 35.82 mA/cm2, 35.69 mA/cm2, and 35.27 mA/cm2 respectively and the uncoated NW generated Jsc of 31.15 mA/cm2. The planar structure without coating exhibits a Jsc of 24.86 mA/cm2, which is significantly lower than the nanostructured solar cells. Finally Lumerical 3D charge transport simulator is used to perform the electrical stimulation of ZnO coated structure, which offers maximum ideal Jsc. A detailed electrical performance analysis of GaAs0.99Bi0.01/CSC/ITO unit nanowire solar cell for ZnO, TiO2, Ta2O5 as ESC and MoO2 as HSC have also been covered in this article which reveals that ZnO as ESC possesses promising potential for designing highly efficient solar cells as it offers a photo conversion efficiency(PCE) of the order of 25% and open circuit voltage (Voc) even for very less minority carrier lifetime (Ʈn) 0.1 ns of GaAs0.99Bi0.01 and 1ps Ʈn of ZnO.

Efficient photocatalytic hydrogen production via single-atom Pt anchored hydrogen-bonded organic frameworks

Constructing single-atom catalysts (SACs) using organic porous framework materials as supports presents a promising approach for developing highly efficient photocatalysts for hydrogen evolution. However, the fabrication of SACs that are both highly stable and active poses a significant challenge, particularly in the precise anchoring of metal single atoms. In this study, we utilized 1,3,6,8-tetra (p-methyl benzoate) pyrene as a ligand to synthesize pyrene-based hydrogen-bonded organic frameworks (denoted as PFC-1) through a self-assembly approach. Subsequently, a liquid-phase photoreduction process was employed to deposit noble metal platinum (Pt) onto PFC-1, resulting in the fabrication of SACs (PFC-1@Pt). Characterization results confirmed that Pt existed in a monatomic state, anchored through PtC and PtO coordination bonds with PFC-1. Serving as electron capture and separation centers, the Pt single atoms effectively suppressed electron-hole recombination, thereby prolonging carrier lifetimes. Consequently, the PFC-1@Pt SAC exhibited efficient hydrogen evolution performance with a rate of 2202.5 μmol g−1 h−1 and maintained photocatalytic activity for over 40 h. Our findings provide a systematic approach for developing efficient and stable SACs based on HOFs, expanding the potential applications of HOF materials in photocatalysis.

A-Site Doping Promotes CO2 Activation and Prolongs Charge Carrier Lifetimes in SrTiO3: Insight from Quantum Dynamics.

Using time-dependent density functional theory and nonadiabatic molecular dynamics, we systematically investigated the effect of A-site doping on the CO2 activation and charge carrier lifetimes in SrTiO3(STO). Our simulations revealed that A-site doping significantly enhances the chemical adsorption of CO2 on SrTiO3 surfaces, which is beneficial for promoting CO2 activation. Moreover, we found that A-site doping can efficiently stabilize the lowest unoccupied molecular orbital (LUMO) of CO2 near the conduction band minimum of STO, promoting the photogenerated electron transfer from the conduction band of STO to the CO2 LUMO. Importantly, A-site doping causes a significant nonadiabatic coupling reduction and prolongs the charge recombination time by a factor of 1.86 compared to the pristine STO. Our study clarifies the influencing mechanism of A-site doping on CO2 activation and charge carrier lifetimes and suggests important principles for the design of high-performance photocatalytic semiconductors.

Numerical optimization of inorganic p-Sb2Se3/n-ZrS2 heterojunction solar cells: achieving high efficiency through SCAPS-1D simulation

p-Sb2Se3 and n-ZrS2 materials show strong potential for cost-effective photovoltaic applications. This study presents a detailed numerical analysis of p-Sb2Se3/n-ZrS2 heterojunction solar cells using SCAPS-1D, focusing on how key parameters such as layer thickness, doping density, and bandgap have affected device performance. Critical photovoltaic metrics, such as built-in voltage (Vbi), carrier lifetime, depletion width (Wd), recombination rates, and photogenerated current, were examined. Our findings demonstrate that optimizing the p-Sb2Se3 absorber layer with a 1.0 eV bandgap, 5000 nm thickness, and doping density of 1020 cm−3 leads to a maximum efficiency of 32.14%, with a fill factor (FF) of 84.57%, short-circuit current density (Jsc) of 47.61 mA cm−2, and open-circuit voltage (Voc) of 0.792 V. For the ZrS2 buffer layer, the best performance was achieved with a 1.2 eV bandgap, 200 nm thickness, and doping density below 1 × 1020 cm−3. These optimized parameters significantly enhanced carrier separation and minimized recombination losses, leading to improved power conversion efficiency. In addition to theoretical optimization, this study emphasizes the practical potential of these materials for real-world applications. The combination of Sb2Se3 and ZrS2 offers a low-cost fabrication process suitable for scalable commercial solar cell production while maintaining high efficiency. These results underscore the viability of p-Sb2Se3/n-ZrS2 heterojunctions as promising candidates for next-generation clean energy solutions.

PHOTOELECTRICAL PROPERTIES OF CdMnSe THIN FILMS

The studied semiconductor structure for photovoltaic cells is composed of SnO2-coated glass and CdMnSe thin film. A study is made by examining the photoluminescence from the surface of the CdMnSe thin film with laser power and sample temperature for an as-grown, then an air-annealed thin film and undergone CdCl2 treatment. Thin films of Cd1-xMnxSe (x=0.02) were grown on a glass substrate. The lifetime of charge carriers under pulsed illumination was determined from the kinetic decay of the photocurrent. The study of relaxation curves of nonequilibrium photoconductivity under the influence of laser radiation confirmed the presence of two recombination channels - intrinsic and impurity. Photocurrent relaxation occurs through fast and slow recombination channels. The fast relaxation time τ = 6 μs associated with the intrinsic transition and the slow relaxation time is due to impurity excitation and τ = 22 μs. The photoluminescence spectra of thin films of Cd1-xMnxSe (x=0.02) were studied. In the photoluminescence study, two maxima are observed due to donor-acceptor recombination and intracenter transition of Mn atom.

Two-dimensional Fullerene-Based Ferroelectric Materials: Assembly and Effects on Charge Carrier Lifetime.

Manipulating the symmetry of fullerene-based low-dimensional materials is crucial to the development of electronic devices and modern nonvolatile memories. However, there have been few reports on studying the physicochemical properties of fullerene and its derivatives by controlling the symmetries. Herein, we demonstrate ferroelectricity in Sc3N@Ih-C80-Pd/Pt adducts with relatively strong spontaneous polarization. Polarization originates from subtle molecular interactions between Sc3N@Ih-C80 and Pd/Pt atoms, breaking the structural symmetry. Additionally, we investigate how a temperature-dependent polar-nonpolar phase transition affects the corresponding nonadiabatic electron-hole recombination process in the ferroelectric fullerene adduct Sc3N@Ih-C80-Pd. The results indicate that polarization has a greater impact than temperature effects, resulting in an extension of the carrier lifetime in the polar phase by over 3 times compared to that in the nonpolar phase. Our findings unveil new members of the ferroelectric fullerene family and provide guidance for improving the performance of optoelectronic materials.

Customizing Aniline-Derived Molecular Structures to Attain beyond 22 % Efficient Inorganic Perovskite Solar Cells.

The characteristics of the soft component and the ionic-electronic nature in all-inorganic CsPbI3-xBrx perovskite typically lead to a significant number of halide vacancy defects and ions migration, resulting in a reduction in both photovoltaic efficiency and stability. Herein, we present a tailored approach in which both anion-fixation and undercoordinated-Pb passivation are achieved in situ during crystallization by employing a molecule derived from aniline, specifically 2-methoxy-5-trifluoromethylaniline (MFA), to address the above challenges. The incorporation of MFA into the perovskite film results in a pronounced inhibition of ion migration, a significant reduction in trap density, an enhancement in grain size, an extension of charge carrier lifetime, and a more favorable alignment of energy levels. These advantageous characteristics contribute to achieving a champion power conversion efficiency (PCE) of 22.14 % for the MFA-based CsPbI3-xBrx perovskite solar cells (PSCs), representing the highest efficiency reported thus far for this type of inorganic metal halide perovskite solar cells, to the best of our knowledge. Moreover, the resultant PSCs exhibits higher environmental stability and photostability. This strategy is anticipated to offer significant advantages for large-area fabrication, particularly in terms of simplicity.

Atomic Dispersed Co on NC@Cu Core-Shells for Solar Seawater Splitting.

With freshwater resources becoming increasingly scarce, the photocatalytic seawater splitting for hydrogen production has garnered widespread attention. In this study, a novel photocatalyst consisting of a Cu core coated is introduced with N-doped C and decorated with single Co atoms (Co-NC@Cu) for solar to hydrogen production from seawater. This catalyst, without using noble metals or sacrificial agents, demonstrates superior hydrogen production effficiency of 9080 µmolg-1h-1, i.e., 4.78% solar-to-hydrogen conversion efficiency, and exceptional long-term stability, operating over 340h continuously. The superior performance is attributed to several key factors. First, the focus-light induced photothermal effect enhances redox reaction capabilities, while the salt-ions enabled charge polarization around catalyst surfaces extends charge carrier lifetime. Furthermore, the Co─NC@Cu exhibits excellent broad light absorption, promoting photoexcited charge production. Theoretical calculations reveal that Co─NC acts as the active site, showing low energy barriers for reduction reactions. Additionally, the formation of a strong surface electric field from the localized surface plasmon resonance (LSPR) of Cu nanoparticles further reduces energy barriers for redox reactions, improving seawater splitting activity. This work provides valuable insights into intergrating the reaction environment, broad solar absorption, LSPR, and active single atoms into a core-shell photocatalyst design for efficient and robust solar-driven seawater splitting.

Polymer‐Assisted Nucleation for Stable Single‐Crystal Perovskite Thin Films

Organic–inorganic hybrid perovskite single crystals have emerged as a strong candidate in photovoltaic and general optoelectronic applications. However, the high supersaturation of the precursor solution leads to the rapid formation of a significant number of nuclei and a diminished concentration of perovskite solute. Consequently, the inadequate availability of precursors poses challenges in sustaining the subsequent crystal growth phase, culminating in the development of small‐sized single crystals. In this work, we report a controlled nucleation process to foster the growth of large‐size single crystals. This method through the coordination interaction between polyacrylic acid and Pb2+ ions, and substitution of the coordination with I‐ ions. This reduces the formation of the Pb‐I6 complex, which promptly emerges in a state of supersaturation and acts as a nucleus, thereby effectively reducing the number of nuclei formed. The single crystals produced using this method exhibit a lateral size exceeding 5 mm, an extended absorption range, a longer carrier lifetime of 10.93 ns, and enhanced stability. These crystals demonstrate the ability to remain stable even after storage in an ambient environment (T = 20 ± 5 °C, RH = 60 ± 5 %) for a period of 20 days.

Effect of Guanidinium Salt for Stress-Relaxation and Interfacial Engineering in Antisolvent Free Perovskite Solar Cells Fabricated Under Air Ambient.

In perovskite solar cells, the presence of stress and defects at interfaces promotes performance degradation and poor stability of the devices. The formation of these defects is more prominent in two-step antisolvent-free perovskite film fabrication. This study addresses these challenges by introducing guanidine sulfate (Gua-S) at the tin oxide/formamidinium lead iodide perovskite interface, fabricated without antisolvent under ambient air. Interfacial Gua-S enhanced morphology by forming bonds between uncoordinated Pb2+ ions and I- vacancies at the interface and showed improvement in the crystallinity and quality of the perovskite film. Microstructural stress analysis indicated a substantial reduction in stress, decreasing from 50.6 to 20.72 MPa with the application of Gua-S. Moreover, the Gua-S treated solar cells showed significant improvements and achieved an open circuit voltage of 1.08 V and 22.34% efficiency. Further, electrochemical impedance spectroscopic analysis showed improved built-in potential, carrier lifetime, and charge recombination lifetime for treated devices. The devices retained over 87% of the initial power conversion efficiency after 2000 hours of operation. This comprehensive study addresses the fundamental issues of interfacial stress and defects in perovskite solar cells and demonstrates the efficacy of Gua-S salt in enhancing both the structural and functional aspects of the antisolvent-free device fabrication process.