Capping Layer Structures Research Articles

P‐211: Double Capping Layers Technology For Transparent OLED Display

With its enhanced display and innovative digital experience, transparent display has gradually penetrated in the fields of culture and education, transportation, and business, and has become one of the important development directions of the next generation display product form. However, in order to improve the transmittance of transparent OLED displays, the scheme of reducing the opening rate is usually used, resulting in decrease in the brightness of the screen; Due to the removal of the polarizer, the reflectivity of the screen further increases. In addition, due to the color properties of the screen material, the display cannot be integrated with the environment very well. In this paper, a double Capping layer (CPL) structure is mentioned. which can increase the brightness of transparent OLED by 10% and reduce the reflectivity by 10% at the same time. The transmission subpixel scheme is proposed. The combination of CPL thickness and transmission sub‐pixel area can realize the integration of screen and environment very well.

Electrospun Polyaniline-Based Composite Nanofibers: Tuning the Electrical Conductivity by Tailoring the Structure of Thiol-Protected Metal Nanoparticles

Composite nanofibers made of a polyaniline-based polymer blend and different thiol-capped metal nanoparticles were prepared using ex situ synthesis and electrospinning technique. The effects of the nanoparticle composition and chemical structure on the electrical properties of the nanocomposites were investigated. This study confirmed that Brust’s procedure is an effective method for the synthesis of sub-10 nm silver, gold, and silver-gold alloy nanoparticles protected with different types of thiols. Electron microscopy results demonstrated that electrospinning is a valuable technique for the production of composite nanofibers with similar morphology and revealed that nanofillers are well-dispersed into the polymer matrix. X-ray diffraction tests proved the lack of a significant influence of the nanoparticle chemical structure on the polyaniline chain arrangement. However, the introduction of conductive nanofillers in the polymer matrix influences the charge transport noticeably improving electrical conductivity. The enhancement of electrical properties is mediated by the nanoparticle capping layer structure. The metal nanoparticle core composition is a key parameter, which exerted a significant influence on the conductivity of the nanocomposites. These results prove that the proposed method can be used to tune the electrical properties of nanocomposites.

Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures.

Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbit coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM.

Effect of solvent on the perovskite thin film morphology and crystallinity

Due to their high efficiency and low cost, organic-inorganic hybrid perovskite solar cells are attracting growing interest recently. For the most commonly studied perovskite CH3NH3PbI3, optimization of the morphology and crystallinity of CH3NH3PbI3 thin films can greatly improve the efficiency of perovskite solar cells. A homogenous and uniform perovskite film can prevent direct contact between the hole transport layer and the electron transport layer, and thus can significantly reduce charge recombination. And the high crystallinity perovskite film facilitates fast charge transportation and injection. Various studies have proved that solvent has a critical influence on both the morphology and the crystallinity of perovskite thin films. In this work, we thoroughly studied the influence of the normally used N, N-Dimethylformamide (DMF) and r-butyrolactone (GBL) solvents on perovskite morphology, crystallinity, as well as the solar cells efficiency. When using DMF as the solvent, the efficiency is only 2.8%, while the efficiency of the cell obtained based on GBL can reach 10.1%. SEM and HRTEM are employed to study the morphology and crystallinity of these two kinds of perovskite films. The perovskite film prepared using solvent DMF shows a rough capping layer consisting of strip-like perovskite crystals, and the filling of meso-TiO2 is poor. Compared with DMF, the GBL perovskite film shows a better capping layer structure consisting of large perovskite domains, and the filling of meso-TiO2 is improved as well. This great difference in capping layer morphology and meso-TiO2 filling is one reason for the different performance. Besides morphology, different defect concentrations in these two kinds of perovskite films are another crucial issue. By Combined XRD and UV techniques, the mechanisms how perovskite precipitats from DMF and GBL solutions can be disclosed. In DMF, because of its low spoiling point of 153 ℃, most of DMF solvent volatilize by spin-coating, and an intermediate MOF structure of PbI2: MAI: xDMF is formed. During thermal annealing, the unstable MOF structure breaks down and a large amount of dislocations form in perovskite films, which highly restrict the charge transport. However, the spoil point of GBL (206 ℃) is higher than that of DMF, which makes it hard to be fully volatilized by spin-coating. During the following thermal treatment, the solubility of perovskite is lowered with increasing temperature. So perovskite crystallites precipitate from the GBL first and then gradually grow up with the volatilization of the excess solvent. We finally find that coordination between the solvent and the PbI2 plays a big role on the morphology and the crystallinity of the solution-processed perovskite film, and this is responsible for the difference of the device performance.

High-Power Wavelength Bistability and Tunability in Passively Mode-Locked Quantum-Dot Laser

Wavelength bistability and tunability are demonstrated in a two-sectional quantum-dot mode-locked laser with a nonidentical capping layer structure. The continuous wave output power of 30 mW (25 mW) and mode-locked average power of 27 mW (20 mW) are achieved for 1245 nm (1295 nm) wavelengths, respectively, under the injection current of 300 mA. The largest switching range of more than 50 nm and wavelength tuning range with picosecond pulses and stable lasing wavelengths between 1245 and 1295 nm are demonstrated for gain current of 300 and 330 mA.

Multilayer coatings and their use in spectroscopic applications

Multilayers coatings are widely used in different fields ranging from new generation sources applications to astrophysical observations. Novel materials couples have been recently considered to improve the efficiency performances in different spectral regions. The deposition of capping layer structures onto standard periodic Mo/Si multilayers is used to add specific properties, such as high resistance to aging and different damage processes, or to regulate the reflectance in other spectral regions. This solution is adopted in the development of multilayer to be used in FERMI@ELETTRA FEL beam transport systems for third harmonics selection.

Gold Nanoparticle Capping Layers: Structure, Dynamics, and Surface Enhancement Measured Using 2D‐IR Spectroscopy

Surface analysis: two-dimensional infrared spectroscopy (2D-IR) was used to probe amide and carboxylate functional groups in the vicinity of gold nanoparticles and their aggregates. The data presented shows that the unique ability of 2D-IR spectroscopy to characterize broadening mechanisms and cross peaks offers new insights into gold nanoparticle capping layer structure and dynamics.

Capped Mo/Si multilayers with improved performance at 304 nm for future solar missions

Novel capping layer structures have been deposited on periodic Mo/Si multilayers to optimize reflectance at 30.4 nm. Design, deposition and characterization of such coatings are presented. Most of the structures proposed show improved performance with respect to standard Mo/Si multilayers and are stable over time. Reflectance at 121.6 nm and in the visible spectral range have been also tested to explore the applicability of such coatings to the Multi Element Telescope for Imaging and Spectroscopy (METIS) instrument, a coronagraph being developed for the ESA Solar Orbiter platform.

Investigation of Grain Boundary Diffusion in Thin Films by SNMS Technique

It was shown more recently in our Laboratory [1,2,3] that having a substrate/diffusant/thin-film/cap-layer structure (the thin film was typically several 10 nm thick, with the same order of magnitude of grain size; the refractory metal cap layer was used just to avoid the oxidation), first the diffusant atoms migrated very fast across the thin film and segregated at the film/cap-layer interface. The accumulated atoms at the film/cap layer interface form a secondary diffusion reservoir and atoms diffuse back to the layer. Later on, the thin film was gradually filled up with the diffusing atoms and composition depth profiles, determined by Secondary Neutral Mass Spectroscopy (SNMS), showed a maximum at the cap layer-thin film interface. The accumulated atoms at this interface formed a secondary diffusion reservoir and atoms diffused back to the layer. These observations can be interpreted supposing a bimodal grain boundary structure with different (fast and low) diffusivities. The observed grain boundary diffusion phenomena can be classified as C-type diffusion. The appearance of the peak observed at the cap layer interface can be used as a tool to determine the grain boundary diffusivity along the fast boundaries. Because the fast boundaries were saturated in the first stage of the process, this back-diffusion took place along the low-diffusivity boundaries only. Thus the SNMS depth-profiling is a good method to determine grain boundary diffusivities in a bimodal structure. In addition, from the overall impurity content inside the film the segregation can also be estimated, if the bulk solubility is low and the GB density is known. Numerical simulations of C-type GB diffusion in thin films with a bimodal structure confirmed that the interpretation of the result depicted above is reasonable [4]. In order to estimate roughly the GB diffusion data we determined the fast diffusivity using the first appearance method. The lower diffusivity was determined from the time evolution of the broadening of the diffusant/thin film interface. In addition both (slow and fast) diffusivities were also estimated from fitting numerical solutions obtained in [4] too.

Q-band ferromagnetic resonance for CoPt-based stacked perpendicular recording media with interlayer exchange coupling

The ferromagnetic interlayer exchange coupling Jinter for stacked perpendicular recording media with a granular layer (GL)/interlayer (IL)/alloy capping layer (CL) structure was quantitatively evaluated by Q-band ferromagnetic resonance (FMR). Two resonances with acoustic and optical precession modes were observed in the FMR signals from the stacked media. Fitting using the Landau–Lifshitz–Gilbert (LLG) equation indicated that Jinter increased from 0.55 to 1.83 erg/cm2 when the Pt IL thickness was reduced from 2.0 to 1.0 nm for media based on Co82Cr10Pt8-CL (4 nm) and Co74Pt16Cr10-8 mol (SiO2)-GL (16 nm). The optimum Pt IL thickness at which the switching field distribution was minimized due to a large reduction in the saturation field of the stacked media was found to correspond to the boundary condition between antiparallel and parallel precession of the magnetic moments of the GL and CL in FMR.

Effect of different cap layers on the structure and optical properties of InAs/GaAs self-assembled quantum dot

Self-assembled InAs/GaAs quantum dot structures with different cap layers are grown by metal-organic chemical vapor deposition.The structure and optical properties of quantum dots are investigated using atomic force microscopy and photoluminescence.The cap layers sandwiched between quantum dots are composed of a low-temperature layer and a high-temperature layer.The comparative studies on low-temperature cap layer show that In graded InGaAs layer structure improves the uniformity of quantum dots,decreases coalescent islands and enhances photoluminescence intensity.Emission wavelength shifts from 1256.0 nm to 1314.4 nm when the thickness of graded InGaAs low-temperature cap layer increases form 6.8 nm to 12 nm.The research on high-temperature cap layer structure indicates that In graded InGaAs layer can increase photoluminescence intensity.

Extreme-ultraviolet multilayer coatings with high spectral purity for solar imaging

Future solar experiments designed to perform solar plasma diagnostics will also be based on extreme-ultravilet observations. Multilayer (ML) optics are essential in this spectral region since these coatings have high reflectivity at normal incidence. Typically, the reflectivity curve of a ML coating has a small but finite bandwidth, and this can be a serious drawback when several spectral lines fall within the bandwidth. In fact, spectral lines emitted by different ion species can correspond to different plasma conditions. We present the design, realization, and characterization of an innovative ML structure with high reflectivity coupled with a strong rejection ratio for two adjacent spectral features. The key element is an optimized capping layer structure deposited on top of the ML that preserves the performance reflectance at the target wavelength and at the same time suppresses the reflectance at specific adjacent wavelengths. Application to the Fe xv3x10(6) K coronal emission line at 28.4 nm with rejection of the He ii Lyman-alpha line at 30.4 nm is presented.

High performance and high reliability AlGaN/GaN HEMTs

AbstractIn this paper, a current status and future technologies of high‐power GaN HEMTs was described. First, commercialization roadmap was shown with output power and efficiency status. Power electronics benchmark was also introduced. Reliability improvement technologies were addressed with recent issues such as drift phenomena. Then, future requirements for expanding GaN electronics market were shown with some recent device developments. Novel E‐mode recessed GaN‐HEMT has been developed using the triple cap layer structure. High‐k insulated gate HEMTs using Ta2O5 were also developed. Finally, we described the next generation GaN HEMTs for millimeter‐wave applications. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Design Consideration and Practical Solution of High-Performance Perpendicular Magnetic Recording Media

The core of the current granular perpendicular magnetic recording (PMR) media is the granular oxide magnetic layer (GOML). We observe that a fcc NiW seed layer, followed by a hcp Ru layer sputtered under low pressure (LP-Ru) and then by a hcp Ru layer sputtered under high pressure (HP-Ru) provides an excellent structural template for the granular oxide magnetic layer (GOML). Microstructure and magnetic properties of the GOML can be tailored through process conditions and alloy compositions to maximize the recording performance of the perpendicular magnetic recording media. Exchange coupled composite (ECC) media design provides significant improvement in overwrite (OW) and signal-to-noise ratio (S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> NR) for perpendicular magnetic recording media. Recording performance of the ECC media needs to be optimized with consideration of the magnetic properties and thicknesses of both the exchange control layer (ECL) and the cap magnetic layer (CML). At their respective optimum, the recording performance of the ECC media is mostly dependent upon the properties of the GOML and CML. This study indicates that a dual magnetic cap layer structure consisting of low-M <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</sub> and high-M <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</sub> sublayers can combine the benefits provided by the two types of cap magnetic materials.

Emission dynamics of InAs self-assembled quantum dots with different cap layer structures

The emission dynamics properties of self-assembled InAs quantum dots with different cap layers are investigated by steady-state and time-resolved photoluminescence (PL). The uniformity of the dots can be improved by the proper cap layer structure. It is found that the InGaAs and InAlAs combination cap layer structure could more effectively release the strain in QDs, suppress the indium segregation, enhance the confinement effect on carriers and reduce the thermally induced carrier escape from QDs. This has led to QDs with narrower emission, above 1.3 µm, and to improved temperature stability of PL intensity and has resulted in an increase of the PL decay time to 10 ns at 160 K.

Improvement of Thermal Stability of Nickel Silicide Using Multi-Capping Structure

In this paper, the electrical properties of NiSi have been characterized using multi capping layer structure for nano CMOS application. We have investigated the formation and thermal stability of Ni silicide using Ni, Ti and TiN capping layers (Ti/Ni/TiN) as a function of Rapid Thermal Processing (RTP) temperature. It was shown that the NiSi with multi capping layer has lower sheet resistances than that with single capping (TiN) layer. NiSi with multi capping layer also showed much better thermal stability. It was verified that the formation Ni-Ti-Si ternary like layer at the top region of thhe NiSi results in improvement of thermal stability.

Oxidation resistance and microstructure of ruthenium-capped extreme ultraviolet lithography multilayers

The oxidation resistance of protective capping layers for extreme ultraviolet lithography (EUVL) multilayers depends on their microstructure. Differently prepared Ru-capping layers, deposited on Mo/Si EUVL multilayers, were investigated to establish their baseline structural, optical, and surface properties in as-deposited state. The same capping layer structures were then tested for their thermal stability and oxidation resistance. The best performing Ru-capping layer structure was analyzed in detail with transmission electron microscopy (TEM). As compared to other Ru capping layers preparations studied here it is the only one that shows grains with preferential orientation. This information is essential for modeling and performance optimization of EUVL multilayers.

&amp;lt;tex&amp;gt;$hbox n^+$&amp;lt;/tex&amp;gt;-InAs–InAlAs Recess Gate Technology for InAs-Channel Millimeter-Wave HFETs

We report a submicrometer, self-aligned recess gate technology for millimeter-wave InAs-channel heterostructure field effect transistors. The recess gate structure is obtained in an n/sup +/-InAs-InAlAs double cap layer structure with a citric-acid-based etchant. From molecular-beam epitaxy-grown material functional devices with 1000-, 500-, and 200-nm gate length were fabricated. From all three device geometries we obtain drive currents of at least 500 mA/mm, gate leakage currents below 2 mA/mm, and RF-transconductance of 1 S/mm. For the 200-nm gate length device f/sub /spl tau// and f/sub max/ are 162 and 137 GHz, respectively. For the 500-nm gate length device f/sub /spl tau// and f/sub max/ are 89 and 140 GHz, respectively. We observe scaling limitations at 200-nm gate length, in particular a negative threshold voltage shift from -550 to -810 mV, increased kink-effect, and a high gate-to-drain capacitance of 0.5 pF/mm. The present limitations to device scaling are discussed.

Carrier transport related analysis of high-power AlGaN/GaN HEMT structures

Shubnikov-de Haas (SdH) oscillation and Hall measurement results were compared with HEMT DC and RF characteristics for two different MOCVD grown AlGaN-GaN HEMT structures on semiinsulating 4H-SiC substrates. A HEMT with a 40-nm, highly doped AlGaN cap layer exhibited an electron mobility of 1500 cm/sup 2//V/s and a sheet concentration of 9/spl times/10/sup 12/ cm at 300 K (7900 cm/sup 2//V/s and 8/spl times/10/sup 12/ cm/sup -2/ at 80 K), but showed a high threshold voltage and high DC output conductance. A 27-nm AlGaN cap with a thinner, lightly doped donor layer yielded similar Hall values, but lower threshold voltage and output conductance and demonstrated a high CW power density of 6.9 W/mm at 10 GHz. The 2DEG of this improved structure had a sheet concentration of n/sub SdH/=7.8/spl times/10/sup 12/ cm/sup -2/ and a high quantum scattering lifetime of /spl tau//sub q/=1.5/spl times/10/sup -13/ s at 4.2 K compared to n/sub SdH/=8.24/spl times/10/sup 12/ cm/sup -2/ and /spl tau//sub q/=1.72/spl times/10/sup -13/ s for the thick AlGaN cap layer structure, Despite the excellent characteristics of the films, the SdH oscillations still indicate a slight parallel conduction and a weak localization of electrons. These results indicate that good channel quality and high sheet carrier density are not the only HEMT attributes required for good transistor performance.

Improving threshold-voltage uniformity of 0.1 [micro sign]m InP-based MODFETs with different gate layouts

It is shown that the threshold-voltage uniformity of 0.1 µm InAlAs/InGaAs-based modulation-doped field-effect transistors with different numbers of gate fingers and different gate widths can be improved when a thin cap-layer structure is employed. This improvement is based on the reduction of the recess time. This reduction suppresses the difference in etching that results from the different etching rates caused by the different electrochemical effects that occur because of the varied gate layouts.